NVMFWD010N10MCLT1G onsemi
Hersteller: onsemiDescription: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.57 EUR |
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Technische Details NVMFWD010N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 84W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 97µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWD010N10MCLT1G nach Preis ab 1.64 EUR bis 4.84 EUR
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NVMFWD010N10MCLT1G | Hersteller : onsemi |
MOSFETs PTNG 100V LL SO8FL DUAL |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWD010N10MCLT1G | Hersteller : onsemi |
Description: PTNG 100V LL SO8FL DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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