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NVMFWD010N10MCLT1G

NVMFWD010N10MCLT1G onsemi

nvmfd010n10mcl-d.pdf
Hersteller: onsemi
Description: PTNG 100V LL SO8FL DUAL
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.1W (Ta), 84W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+1.6 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFWD010N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL DUAL, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Vgs(th) (Max) @ Id: 3V @ 97µA, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc), Drain to Source Voltage (Vdss): 100V, Power - Max: 3.1W (Ta), 84W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote NVMFWD010N10MCLT1G nach Preis ab 1.76 EUR bis 4.91 EUR

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NVMFWD010N10MCLT1G NVMFWD010N10MCLT1G onsemi nvmfd010n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.88 EUR
10+3.19 EUR
100+2.22 EUR
500+1.88 EUR
1000+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD010N10MCLT1G NVMFWD010N10MCLT1G onsemi nvmfd010n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.1W (Ta), 84W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.91 EUR
10+3.19 EUR
100+2.22 EUR
500+1.88 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD010N10MCLT1G nvmfd010n10mcl-d.pdf
NVMFWD010N10MCLT1G
Hersteller: onsemi
MOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.88 EUR
10+3.19 EUR
100+2.22 EUR
500+1.88 EUR
1000+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD010N10MCLT1G nvmfd010n10mcl-d.pdf
NVMFWD010N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL DUAL
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.1W (Ta), 84W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.91 EUR
10+3.19 EUR
100+2.22 EUR
500+1.88 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH