FDMA1032CZ ONSEMI
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.7/-3.1A
Power dissipation: 1.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 68/95mΩ
Mounting: SMD
Gate charge: 4/7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.63 EUR |
| 156+ | 0.46 EUR |
| 177+ | 0.41 EUR |
| 500+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMA1032CZ ONSEMI
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A, Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V, Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2).
Weitere Produktangebote FDMA1032CZ nach Preis ab 0.33 EUR bis 1.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMA1032CZ | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 3.7A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
auf Bestellung 2686 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FDMA1032CZ | Hersteller : onsemi / Fairchild |
MOSFETs 20V Complementary PowerTrench MOSFET |
auf Bestellung 6856 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
FDMA1032CZ | Hersteller : onsemi |
Description: MOSFET N/P-CH 20V 3.7A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
|||||||||||||||||
| FDMA1032CZ |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |

