
2SK3557-7-TB-E onsemi

Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: 150°C (TJ)
Technology: JFET
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Noise Figure: 1dB
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Voltage - Rated: 15 V
Power - Max: 200 mW
Voltage - Test: 5 V
Current - Test: 1 mA
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.23 EUR |
6000+ | 0.22 EUR |
9000+ | 0.21 EUR |
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Technische Details 2SK3557-7-TB-E onsemi
Description: JFET N-CH 5V 3CP, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Current Rating (Amps): 50mA, Mounting Type: Surface Mount, Configuration: N-Channel, Operating Temperature: 150°C (TJ), Technology: JFET, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V, Noise Figure: 1dB, Voltage - Breakdown (V(BR)GSS): 15 V, Current Drain (Id) - Max: 50 mA, Supplier Device Package: 3-CP, Part Status: Active, Drain to Source Voltage (Vdss): 15 V, Voltage - Rated: 15 V, Power - Max: 200 mW, Voltage - Test: 5 V, Current - Test: 1 mA, Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA, Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V.
Weitere Produktangebote 2SK3557-7-TB-E nach Preis ab 0.24 EUR bis 0.89 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SK3557-7-TB-E | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 50mA Mounting Type: Surface Mount Configuration: N-Channel Operating Temperature: 150°C (TJ) Technology: JFET FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Noise Figure: 1dB Voltage - Breakdown (V(BR)GSS): 15 V Current Drain (Id) - Max: 50 mA Supplier Device Package: 3-CP Part Status: Active Drain to Source Voltage (Vdss): 15 V Voltage - Rated: 15 V Power - Max: 200 mW Voltage - Test: 5 V Current - Test: 1 mA Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V |
auf Bestellung 17618 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3557-7-TB-E | Hersteller : onsemi |
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auf Bestellung 47017 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK3557-7-TB-E | Hersteller : ON Semiconductor |
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auf Bestellung 2824 Stücke: Lieferzeit 21-28 Tag (e) |
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2SK3557-7-TB-E | Hersteller : SANYO |
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auf Bestellung 734 Stücke: Lieferzeit 21-28 Tag (e) |
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2SK3557-7-TB-E | Hersteller : ON Semiconductor |
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2SK3557-7-TB-E | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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2SK3557-7-TB-E | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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2SK3557-7-TB-E | Hersteller : ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2SK3557-7-TB-E | Hersteller : ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 16mA Power dissipation: 0.2W Case: SC59 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |