FDMS3664S onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
| Anzahl | Preis |
|---|---|
| 3000+ | 0.89 EUR |
| 6000+ | 0.87 EUR |
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Technische Details FDMS3664S onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: Power56, Vgs(th) (Max) @ Id: 2.7V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 13A, 25A.
Weitere Produktangebote FDMS3664S nach Preis ab 0.89 EUR bis 2.53 EUR
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FDMS3664S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | onsemi / Fairchild |
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 14108 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3664S | onsemi |
Description: MOSFET 2N-CH 30V 13A/25A POWER56Packaging: Cut Tape (CT) Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Drain to Source Voltage (Vdss): 30V Part Status: Active |
auf Bestellung 146472 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3664S | onsemi |
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 14108 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3664S |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 61+ | 1.19 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.9 EUR |
| FDMS3664S |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
auf Bestellung 14108 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.11 EUR |
| 10+ | 1.61 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.89 EUR |
| FDMS3664S |
![]() |
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Drain to Source Voltage (Vdss): 30V
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Drain to Source Voltage (Vdss): 30V
Part Status: Active
auf Bestellung 146472 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.07 EUR |
| FDMS3664S |
![]() |
Hersteller: onsemi
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
auf Bestellung 14108 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.89 EUR |

