FDMS3664S onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.06 EUR |
| 6000+ | 1.04 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMS3664S onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 25A, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56, Part Status: Active.
Weitere Produktangebote FDMS3664S nach Preis ab 1.06 EUR bis 4.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMS3664S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS3664S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS3664S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS3664S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 2967 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FDMS3664S | onsemi / Fairchild |
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 14108 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDMS3664S | onsemi |
Description: MOSFET 2N-CH 30V 13A/25A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 Part Status: Active |
auf Bestellung 146472 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDMS3664S | onsemi |
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 13890 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS3664S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.07 EUR |
| FDMS3664S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.07 EUR |
| FDMS3664S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 393+ | 1.71 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.38 EUR |
| FDMS3664S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 2967 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 393+ | 1.71 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.38 EUR |
| FDMS3664S |
|
Hersteller: onsemi / Fairchild
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
auf Bestellung 14108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.13 EUR |
| 3000+ | 1.06 EUR |
| FDMS3664S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Part Status: Active
auf Bestellung 146472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.57 EUR |
| 11+ | 1.94 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.27 EUR |
| FDMS3664S |
|
Hersteller: onsemi
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
auf Bestellung 13890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.06 EUR |
| 10+ | 1.96 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.24 EUR |
| 3000+ | 1.18 EUR |
| FDMS3664S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)