FDMS3664S onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Part Status: Active
auf Bestellung 2748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.45 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.34 EUR |
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Technische Details FDMS3664S onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 25A, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56, Part Status: Active.
Weitere Produktangebote FDMS3664S nach Preis ab 1.42 EUR bis 2.68 EUR
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FDMS3664S | Hersteller : onsemi / Fairchild |
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 14371 Stücke: Lieferzeit 14-28 Tag (e) |
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FDMS3664S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin Power 56 T/R |
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FDMS3664S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin Power 56 T/R |
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FDMS3664S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin Power 56 T/R |
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| FDMS3664S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDMS3664S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/25A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 Part Status: Active |
Produkt ist nicht verfügbar |
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| FDMS3664S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |