Technische Details FDMS3664S ON Semiconductor
Description: MOSFET 2N-CH 30V 13A/25A POWER56, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: Power56, Vgs(th) (Max) @ Id: 2.7V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 13A, 25A.
Weitere Produktangebote FDMS3664S nach Preis ab 1.04 EUR bis 3.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FDMS3664S | ON Semiconductor |
 Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | onsemi |
Description: MOSFET 2N-CH 30V 13A/25A POWER56 Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 25A |
auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3664S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 2967 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | onsemi / Fairchild |
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 14108 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3664S | onsemi |
Description: MOSFET 2N-CH 30V 13A/25A POWER56 Packaging: Cut Tape (CT) Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Drain to Source Voltage (Vdss): 30V Part Status: Active |
auf Bestellung 146472 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3664S | onsemi |
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET |
auf Bestellung 14108 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS3664S |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.05 EUR |
| FDMS3664S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.06 EUR |
| 6000+ | 1.04 EUR |
| FDMS3664S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 2967 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 393+ | 1.68 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.34 EUR |
| FDMS3664S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/25A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 393+ | 1.68 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.34 EUR |
| FDMS3664S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.7 EUR |
| 61+ | 1.42 EUR |
| 68+ | 1.26 EUR |
| 100+ | 1.07 EUR |
| FDMS3664S |
|
Hersteller: onsemi / Fairchild
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
auf Bestellung 14108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.13 EUR |
| 3000+ | 1.06 EUR |
| FDMS3664S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Drain to Source Voltage (Vdss): 30V
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Drain to Source Voltage (Vdss): 30V
Part Status: Active
auf Bestellung 146472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.57 EUR |
| 11+ | 1.94 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.27 EUR |
| FDMS3664S |
|
Hersteller: onsemi
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
MOSFETs PowerStage Dual N-Ch PowerTrench MOSFET
auf Bestellung 14108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.5 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.2 EUR |
| 3000+ | 1.18 EUR |