Weitere Produktangebote FCPF190N60 nach Preis ab 2.82 EUR bis 7.23 EUR
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FCPF190N60 | Hersteller : onsemi |
 MOSFETs SuperFET2, 190mohm |
auf Bestellung 604 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF190N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 20.2A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
auf Bestellung 530 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF190N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| FCPF190N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Case: TO220FP Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.199Ω Gate charge: 57nC Power dissipation: 39W Pulsed drain current: 60.6A |
Produkt ist nicht verfügbar |