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NJVMJD41CT4G onsemi


mjd41c-d.pdf
Hersteller: onsemi
Description: TRANS NPN 100V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Qualification: AEC-Q101
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Technische Details NJVMJD41CT4G onsemi

Description: TRANS NPN 100V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W, Qualification: AEC-Q101.

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NJVMJD41CT4G NJVMJD41CT4G onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD41CT4G NJVMJD41CT4G onsemi mjd41c-d.pdf Bipolar Transistors - BJT BIP NPN 6A 100V TR
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NJVMJD41CT4G NJVMJD41CT4G ONSEMI mjd41c-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD41CT4G mjd41c-d.pdf
Hersteller: onsemi
Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD41CT4G mjd41c-d.pdf
Hersteller: onsemi
Bipolar Transistors - BJT BIP NPN 6A 100V TR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD41CT4G mjd41c-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 20W
Case: DPAK
Current gain: 15...75
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH