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NTMYS025N06CLTWG

NTMYS025N06CLTWG onsemi

ntmys025n06cl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.26 EUR
Mindestbestellmenge: 3000
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Technische Details NTMYS025N06CLTWG onsemi

Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 3.8W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2V @ 13µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.

Weitere Produktangebote NTMYS025N06CLTWG nach Preis ab 1.85 EUR bis 6.09 EUR

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NTMYS025N06CLTWG NTMYS025N06CLTWG Hersteller : onsemi NTMYS025N06CL_D-2319098.pdf MOSFET 60V 27.5 mOhm 21A Single N-Channel
auf Bestellung 5945 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.08 EUR
16+ 3.41 EUR
100+ 2.7 EUR
250+ 2.49 EUR
500+ 2.28 EUR
1000+ 1.95 EUR
3000+ 1.85 EUR
Mindestbestellmenge: 13
NTMYS025N06CLTWG NTMYS025N06CLTWG Hersteller : onsemi ntmys025n06cl-d.pdf Description: MOSFET N-CH 60V 8.5A/21A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2V @ 13µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.09 EUR
10+ 5.13 EUR
100+ 4.15 EUR
500+ 3.69 EUR
1000+ 3.16 EUR
Mindestbestellmenge: 3
NTMYS025N06CLTWG NTMYS025N06CLTWG Hersteller : ON Semiconductor ntmys025n06cl-d.pdf Trans MOSFET N-CH 60V 8.5A 5-Pin(4+Tab) LFPAK T/R
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