FDS4672A onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.58 EUR |
| 5000+ | 0.54 EUR |
| 7500+ | 0.51 EUR |
| 12500+ | 0.49 EUR |
Produktrezensionen
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Technische Details FDS4672A onsemi
Description: MOSFET N-CH 40V 11A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V.
Weitere Produktangebote FDS4672A nach Preis ab 0.56 EUR bis 2.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Case: SO8 Type of transistor: N-MOSFET On-state resistance: 21mΩ Power dissipation: 2.5W Drain current: 11A Gate-source voltage: ±12V Drain-source voltage: 40V Polarisation: unipolar |
auf Bestellung 2160 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4672A | onsemi |
Description: MOSFET N-CH 40V 11A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 39925 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4672A | onsemi / Fairchild |
MOSFETs SO-8 |
auf Bestellung 4213 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDS4672A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Case: SO8
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Power dissipation: 2.5W
Drain current: 11A
Gate-source voltage: ±12V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 2160 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 58+ | 1.48 EUR |
| 80+ | 1.07 EUR |
| FDS4672A |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 39925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |
| FDS4672A |
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Hersteller: onsemi / Fairchild
MOSFETs SO-8
MOSFETs SO-8
auf Bestellung 4213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.49 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.65 EUR |
| 5000+ | 0.56 EUR |