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NVB110N65S3F

NVB110N65S3F onsemi

nvb110n65s3f-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+6.24 EUR
Mindestbestellmenge: 800
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Technische Details NVB110N65S3F onsemi

Description: MOSFET N-CH 650V 30A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V, Qualification: AEC-Q101.

Weitere Produktangebote NVB110N65S3F nach Preis ab 5.3 EUR bis 10.33 EUR

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NVB110N65S3F NVB110N65S3F Hersteller : onsemi NVB110N65S3F_D-2319280.pdf MOSFET SUPERFET3 650V D2PAK PKG
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.24 EUR
10+ 8.61 EUR
25+ 8.34 EUR
100+ 6.95 EUR
250+ 6.76 EUR
500+ 6.55 EUR
800+ 5.3 EUR
NVB110N65S3F NVB110N65S3F Hersteller : onsemi nvb110n65s3f-d.pdf Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.33 EUR
10+ 8.67 EUR
100+ 7.02 EUR
Mindestbestellmenge: 2
NVB110N65S3F NVB110N65S3F Hersteller : ON Semiconductor nvb110n65s3f-d.pdf Power MOSFET Single N-Channel
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