Produkte > ONSEMI > NVMFWD024N06CT1G
NVMFWD024N06CT1G

NVMFWD024N06CT1G onsemi

nvmfd024n06c-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+1.42 EUR
3000+1.35 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFWD024N06CT1G onsemi

Description: MOSFET 2N-CH 60V 8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V, Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWD024N06CT1G nach Preis ab 1.56 EUR bis 4.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFWD024N06CT1G NVMFWD024N06CT1G onsemi nvmfd024n06c-d.pdf Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
10+3.07 EUR
100+2.12 EUR
500+1.72 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD024N06CT1G NVMFWD024N06CT1G onsemi nvmfd024n06c-d.pdf MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.8 EUR
10+3.12 EUR
100+2.15 EUR
500+1.74 EUR
1000+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD024N06CT1G nvmfd024n06c-d.pdf
NVMFWD024N06CT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.73 EUR
10+3.07 EUR
100+2.12 EUR
500+1.72 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD024N06CT1G nvmfd024n06c-d.pdf
NVMFWD024N06CT1G
Hersteller: onsemi
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.8 EUR
10+3.12 EUR
100+2.15 EUR
500+1.74 EUR
1000+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH