auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.32 EUR |
Produktrezensionen
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Technische Details FDD6680AS UMW
Description: MOSFET N-CH 30V 55A TO252, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V, Power Dissipation (Max): 60W (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V.
Weitere Produktangebote FDD6680AS nach Preis ab 0.96 EUR bis 0.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD6680AS | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 30V 55A TO252Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V Power Dissipation (Max): 60W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
auf Bestellung 9266 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD6680AS | Hersteller : onsemi / Fairchild |
MOSFET 30V NCH DPAK POWR TRENCH |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD6680AS | Hersteller : FAIRCHILD |
D-PAK/ TO-252 |
auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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| FDD6680AS | Hersteller : ONSEMI |
FDD6680AS SMD N channel transistors |
Produkt ist nicht verfügbar |
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FDD6680AS | Hersteller : UMW |
Description: MOSFET N-CH 30V 55A DPAK Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDD6680AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 55A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V Power Dissipation (Max): 60W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDD6680AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 55A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.5A, 10V Power Dissipation (Max): 60W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
Produkt ist nicht verfügbar |