NXH450N65L4Q2F2S1G onsemi
Hersteller: onsemiDescription: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 215.44 EUR |
| 12+ | 186.62 EUR |
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Technische Details NXH450N65L4Q2F2S1G onsemi
Description: 120KW 1100V Q2PACK, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A, NTC Thermistor: No, Supplier Device Package: 40-PIM/Q2PACK (107.2x47), IGBT Type: Field Stop, Current - Collector (Ic) (Max): 167 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 365 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V.
Weitere Produktangebote NXH450N65L4Q2F2S1G nach Preis ab 192.60 EUR bis 221.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NXH450N65L4Q2F2S1G | Hersteller : onsemi |
IGBT Modules Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 250 A Diode, 175degC Module Operating Junction Temperature |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| NXH450N65L4Q2F2S1G | Hersteller : ON Semiconductor |
NXH450N65L4Q2F2S1G |
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