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NTB150N65S3HF ONSEMI ntb150n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.15Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTD250N65S3H ONSEMI ntd250n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 0.25Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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FCMT250N65S3 ONSEMI fcmt250n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: PQFN4
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 30A
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.25Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTBL050N65S3H ONSEMI ntbl050n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Power dissipation: 305W
Case: H-PSOF8L
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 132A
Drain-source voltage: 650V
Drain current: 49A
On-state resistance: 50mΩ
Polarisation: unipolar
Produkt ist nicht verfügbar
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FDMB3900AN ONSEMI FDMB3900AN-D.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 7A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 28A
Case: MicroFET
Produkt ist nicht verfügbar
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NCP347MTAETBG ONSEMI ncp347-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
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NCP347MTAFTBG ONSEMI ncp347-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
Produkt ist nicht verfügbar
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NVHL020N090SC1 NVHL020N090SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEC2C8BD1520C7&compId=NVHL020N090SC1.PDF?ci_sign=698199ec34c6addf446705b90f85c1dacc600b3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRS3200T3G ONSEMI mbrs3200t3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 1298 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
135+0.53 EUR
164+0.44 EUR
243+0.29 EUR
257+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 99
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FDD86367-F085 ONSEMI fdd86367_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK3
Produkt ist nicht verfügbar
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MUR480ERLG ONSEMI mur480e-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; DO201AD; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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74VHCT00AM 74VHCT00AM ONSEMI 74vhct00a-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHCT
Supply voltage: 4.5...5.5V DC
Quiescent current: 20µA
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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74VHCT00AMTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627768BBA20D3&compId=74VHCT00A-D.pdf?ci_sign=cf30d8d1c644699ca9a4d53d81b7c6dce9b9d229 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHCT
Operating temperature: -40...85°C
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MMBZ15VALT1G MMBZ15VALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.9A
Breakdown voltage: 15V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
auf Bestellung 4017 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
658+0.11 EUR
940+0.08 EUR
1034+0.07 EUR
1107+0.07 EUR
1684+0.04 EUR
1852+0.04 EUR
Mindestbestellmenge: 455
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NTLUS030N03CTAG ONSEMI ntlus030n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQP3N50C-F080 FQP3N50C-F080 ONSEMI fqp3n50c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; Idm: 12A; 62W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.8A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 62W
Gate charge: 13nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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FQU3N50CTU ONSEMI FAIRS46458-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 10A; 35W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 35W
Gate charge: 13nC
Pulsed drain current: 10A
Produkt ist nicht verfügbar
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FDPF3N50NZ ONSEMI ONSM-S-A0003584319-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 3A; 27W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 3A
Case: TO220FP
Gate-source voltage: 25V
On-state resistance: 2.1Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 27W
Technology: PowerTrench®
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
90+1.23 EUR
450+1.04 EUR
Mindestbestellmenge: 90
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FQA13N80-F109 FQA13N80-F109 ONSEMI fqa13n80_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50.4A
Gate charge: 88nC
Produkt ist nicht verfügbar
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NTBG040N120SC1 ONSEMI ntbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NDS355AN NDS355AN ONSEMI pVersion=0046&contRep=ZT&docId=E20E097CB05218F1A303005056AB0C4F&compId=NDS355AN.pdf?ci_sign=51632ade24c946b391006d056116790ad8c03e8c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 30V
Drain current: 1.7A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT23
auf Bestellung 2613 Stücke:
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95+0.76 EUR
157+0.46 EUR
184+0.39 EUR
207+0.35 EUR
226+0.32 EUR
231+0.31 EUR
239+0.30 EUR
250+0.29 EUR
Mindestbestellmenge: 95
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FQP8N80C FQP8N80C ONSEMI FAIRS46449-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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MBRF40250TG ONSEMI mbr40250-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220FP; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.86V
Max. forward impulse current: 150A
Kind of package: tube
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MBRF20L60CTG ONSEMI mbr20l60ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
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MBRF10H150CTG ONSEMI mbrf10h150ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 10A
Produkt ist nicht verfügbar
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TIP36CG TIP36CG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
30+2.39 EUR
Mindestbestellmenge: 21
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TIP36AG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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NTD280N60S5Z ONSEMI ntd280n60s5z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDP2572 FDP2572 ONSEMI FAIRS45683-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 20A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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FDP2552 FDP2552 ONSEMI fdp2552-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SRDA3.3-4DR2G ONSEMI srda3.3-4-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Number of channels: 4
Produkt ist nicht verfügbar
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NSR0340V2T1G NSR0340V2T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999E51FDB6254F820&compId=NSR0340V2.pdf?ci_sign=6d4bff568ae106d56d32e773434e2c32c231d5ec Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Mounting: SMD
Case: SOD523
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Application: automotive industry
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR0340HT1G ONSEMI nsr0340h-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.59V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR0320MW2T3G ONSEMI nsr0320mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Max. off-state voltage: 23V
Max. forward voltage: 0.5V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Type of diode: Schottky rectifying
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NSR0340P2T5G ONSEMI nsr0340p2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 0.2A; reel,tape
Mounting: SMD
Case: SOD923
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.56V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR0320XV6T1G ONSEMI nsr0320xv6t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Max. off-state voltage: 23V
Max. forward voltage: 0.5V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 7A
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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NSR0340V2T5G ONSEMI nsr0340v2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Mounting: SMD
Case: SOD523
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.51V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR1030QMUTWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Case: uDFN4
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 12A
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
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BAR43S ONSEMI pVersion=0046&contRep=ZT&docId=E1C0470F8C513FF1A6F5005056AB5A8F&compId=BAR43S-Fairchild.pdf?ci_sign=f178fb60d1f38a78de55a303d0225c404b97425c Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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80SQ045NRLG ONSEMI 80sq045n-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS38 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
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NCP1392DDR2G NCP1392DDR2G ONSEMI ncp1392-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Case: SO8
Output current: -1...0.5A
Supply voltage: 8...17.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Voltage class: 600V
Produkt ist nicht verfügbar
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ESD7C3.3DT5G ESD7C3.3DT5G ONSEMI esd7c3.3d-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.24W; double,common anode; SOT723; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Peak pulse power dissipation: 0.24W
Capacitance: 12...13pF
Leakage current: 1µA
Version: ESD
auf Bestellung 6189 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
319+0.22 EUR
421+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 162
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UESD3.3DT5G ONSEMI uesd3.3dt5g-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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SZUESD3.3DT5G ONSEMI uesd3.3dt5g-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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2SA2029M3T5G ONSEMI 2sa2029m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.265W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Collector-emitter voltage: 50V
Current gain: 120...560
Collector current: 0.1A
Produkt ist nicht verfügbar
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BD441G BD441G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB262853982469&compId=BD441G.PDF?ci_sign=feef31d5114e76b1a74dc9c48c3fc51112bdc7de Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
Current gain: 40...475
Power dissipation: 36W
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.60 EUR
70+1.03 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 45
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SZBZX84C9V1ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C9V1LT1G SZBZX84C9V1LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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MM3Z9V1T1G MM3Z9V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
425+0.17 EUR
Mindestbestellmenge: 425
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SZMM3Z9V1T1G SZMM3Z9V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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FDS8878 ONSEMI FDS8878-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.2A; Idm: 80A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.2A
Pulsed drain current: 80A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74VHC74MX 74VHC74MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B3D387B53820&compId=74VHC74-D.pdf?ci_sign=fa8580f39a0b0aededb51a6dcfcf5b46481181af Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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MC74VHC74DR2G MC74VHC74DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F8DF820&compId=MC74VHC74-D.pdf?ci_sign=4e0a659abce467d5ff158d5eef1bc839bdaa37f6 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 2.2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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MC74VHC74DTG MC74VHC74DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F8DF820&compId=MC74VHC74-D.pdf?ci_sign=4e0a659abce467d5ff158d5eef1bc839bdaa37f6 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Supply voltage: 2.2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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MC74VHC74DTR2G MC74VHC74DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F8DF820&compId=MC74VHC74-D.pdf?ci_sign=4e0a659abce467d5ff158d5eef1bc839bdaa37f6 Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Supply voltage: 2.2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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74VHCT04AMTCX 74VHCT04AMTCX ONSEMI ONSM-S-A0003584937-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: hex; 6
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: NOT
Family: VHCT
Mounting: SMD
Produkt ist nicht verfügbar
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MC74VHCT04ADR2G MC74VHCT04ADR2G ONSEMI mc74vhct04a-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 20uA
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: hex; 6
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS; TTL
Family: VHCT
Mounting: SMD
Produkt ist nicht verfügbar
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MC74VHCT04ADTR2G MC74VHCT04ADTR2G ONSEMI mc74vhct04a-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: hex; 6
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS; TTL
Family: VHCT
Mounting: SMD
Produkt ist nicht verfügbar
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74VHC157MTC 74VHC157MTC ONSEMI FAIRS24896-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Quiescent current: 40µA
Kind of package: tube
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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NTB150N65S3HF ntb150n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Drain current: 24A
On-state resistance: 0.15Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTD250N65S3H ntd250n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Drain current: 13A
On-state resistance: 0.25Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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FCMT250N65S3 fcmt250n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: PQFN4
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 30A
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.25Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTBL050N65S3H ntbl050n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Power dissipation: 305W
Case: H-PSOF8L
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 132A
Drain-source voltage: 650V
Drain current: 49A
On-state resistance: 50mΩ
Polarisation: unipolar
Produkt ist nicht verfügbar
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FDMB3900AN FDMB3900AN-D.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 7A; Idm: 28A; 1.6W; MicroFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 7A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 28A
Case: MicroFET
Produkt ist nicht verfügbar
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NCP347MTAETBG ncp347-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
Produkt ist nicht verfügbar
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NCP347MTAFTBG ncp347-d.pdf
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; 1.2÷28VDC; WDFN10
Type of integrated circuit: supervisor circuit
Supply voltage: 1.2...28V DC
Case: WDFN10
Operating temperature: -40...85°C
Threshold on-voltage: 2.95V
Produkt ist nicht verfügbar
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NVHL020N090SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEC2C8BD1520C7&compId=NVHL020N090SC1.PDF?ci_sign=698199ec34c6addf446705b90f85c1dacc600b3c
NVHL020N090SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRS3200T3G mbrs3200t3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Kind of package: reel; tape
auf Bestellung 1298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
135+0.53 EUR
164+0.44 EUR
243+0.29 EUR
257+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 99
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FDD86367-F085 fdd86367_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
Mounting: SMD
Drain-source voltage: 80V
Drain current: 100A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK3
Produkt ist nicht verfügbar
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MUR480ERLG mur480e-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; DO201AD; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: DO201AD
Reverse recovery time: 100ns
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74VHCT00AM 74vhct00a-d.pdf
74VHCT00AM
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Family: VHCT
Supply voltage: 4.5...5.5V DC
Quiescent current: 20µA
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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74VHCT00AMTCX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E627768BBA20D3&compId=74VHCT00A-D.pdf?ci_sign=cf30d8d1c644699ca9a4d53d81b7c6dce9b9d229
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHCT
Operating temperature: -40...85°C
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MMBZ15VALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ15VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.9A
Breakdown voltage: 15V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
auf Bestellung 4017 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
658+0.11 EUR
940+0.08 EUR
1034+0.07 EUR
1107+0.07 EUR
1684+0.04 EUR
1852+0.04 EUR
Mindestbestellmenge: 455
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NTLUS030N03CTAG ntlus030n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.9A; Idm: 20A; 1.49W; uDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.9A
Pulsed drain current: 20A
Power dissipation: 1.49W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQP3N50C-F080 fqp3n50c-d.pdf
FQP3N50C-F080
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; Idm: 12A; 62W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.8A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 62W
Gate charge: 13nC
Pulsed drain current: 12A
Produkt ist nicht verfügbar
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FQU3N50CTU FAIRS46458-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 1.5A; Idm: 10A; 35W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 1.5A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 35W
Gate charge: 13nC
Pulsed drain current: 10A
Produkt ist nicht verfügbar
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FDPF3N50NZ ONSM-S-A0003584319-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 3A; 27W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 3A
Case: TO220FP
Gate-source voltage: 25V
On-state resistance: 2.1Ω
Mounting: THT
Kind of channel: enhancement
Power dissipation: 27W
Technology: PowerTrench®
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+1.23 EUR
450+1.04 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
FQA13N80-F109 fqa13n80_f109-d.pdf
FQA13N80-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50.4A
Gate charge: 88nC
Produkt ist nicht verfügbar
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NTBG040N120SC1 ntbg040n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NDS355AN pVersion=0046&contRep=ZT&docId=E20E097CB05218F1A303005056AB0C4F&compId=NDS355AN.pdf?ci_sign=51632ade24c946b391006d056116790ad8c03e8c
NDS355AN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: 30V
Drain current: 1.7A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SOT23
auf Bestellung 2613 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
157+0.46 EUR
184+0.39 EUR
207+0.35 EUR
226+0.32 EUR
231+0.31 EUR
239+0.30 EUR
250+0.29 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
FQP8N80C FAIRS46449-1.pdf?t.download=true&u=5oefqw
FQP8N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRF40250TG mbr40250-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220FP; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.86V
Max. forward impulse current: 150A
Kind of package: tube
Produkt ist nicht verfügbar
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MBRF20L60CTG mbr20l60ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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MBRF10H150CTG mbrf10h150ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 10A
Produkt ist nicht verfügbar
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TIP36CG tip35a-d.pdf
TIP36CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
30+2.39 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
TIP36AG tip35a-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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NTD280N60S5Z ntd280n60s5z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDP2572 FAIRS45683-1.pdf?t.download=true&u=5oefqw
FDP2572
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 20A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDP2552 fdp2552-d.pdf
FDP2552
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SRDA3.3-4DR2G srda3.3-4-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Number of channels: 4
Produkt ist nicht verfügbar
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NSR0340V2T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999E51FDB6254F820&compId=NSR0340V2.pdf?ci_sign=6d4bff568ae106d56d32e773434e2c32c231d5ec
NSR0340V2T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Mounting: SMD
Case: SOD523
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Application: automotive industry
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR0340HT1G nsr0340h-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.59V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR0320MW2T3G nsr0320mw2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Mounting: SMD
Case: SOD323
Kind of package: reel; tape
Max. off-state voltage: 23V
Max. forward voltage: 0.5V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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NSR0340P2T5G nsr0340p2-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 0.2A; reel,tape
Mounting: SMD
Case: SOD923
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.56V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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NSR0320XV6T1G nsr0320xv6t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT563; SMD; 23V; 1A; reel,tape
Mounting: SMD
Case: SOT563
Kind of package: reel; tape
Max. off-state voltage: 23V
Max. forward voltage: 0.5V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 7A
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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NSR0340V2T5G nsr0340v2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Mounting: SMD
Case: SOD523
Kind of package: reel; tape
Max. off-state voltage: 40V
Max. forward voltage: 0.51V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Type of diode: Schottky switching
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR1030QMUTWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Case: uDFN4
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 12A
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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BAR43S pVersion=0046&contRep=ZT&docId=E1C0470F8C513FF1A6F5005056AB5A8F&compId=BAR43S-Fairchild.pdf?ci_sign=f178fb60d1f38a78de55a303d0225c404b97425c
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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80SQ045NRLG 80sq045n-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS38 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
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NCP1392DDR2G ncp1392-d.pdf
NCP1392DDR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Case: SO8
Output current: -1...0.5A
Supply voltage: 8...17.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Voltage class: 600V
Produkt ist nicht verfügbar
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ESD7C3.3DT5G esd7c3.3d-d.pdf
ESD7C3.3DT5G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.24W; double,common anode; SOT723; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Peak pulse power dissipation: 0.24W
Capacitance: 12...13pF
Leakage current: 1µA
Version: ESD
auf Bestellung 6189 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
319+0.22 EUR
421+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 162
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UESD3.3DT5G uesd3.3dt5g-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZUESD3.3DT5G uesd3.3dt5g-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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2SA2029M3T5G 2sa2029m3-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.265W
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT723
Collector-emitter voltage: 50V
Current gain: 120...560
Collector current: 0.1A
Produkt ist nicht verfügbar
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BD441G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB262853982469&compId=BD441G.PDF?ci_sign=feef31d5114e76b1a74dc9c48c3fc51112bdc7de
BD441G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
Current gain: 40...475
Power dissipation: 36W
auf Bestellung 448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
70+1.03 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C9V1ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C9V1LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C9V1LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX84C
Application: automotive industry
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MM3Z9V1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z9V1T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
425+0.17 EUR
Mindestbestellmenge: 425
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SZMM3Z9V1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z9V1T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDS8878 FDS8878-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10.2A; Idm: 80A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10.2A
Pulsed drain current: 80A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74VHC74MX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B3D387B53820&compId=74VHC74-D.pdf?ci_sign=fa8580f39a0b0aededb51a6dcfcf5b46481181af
74VHC74MX
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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MC74VHC74DR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F8DF820&compId=MC74VHC74-D.pdf?ci_sign=4e0a659abce467d5ff158d5eef1bc839bdaa37f6
MC74VHC74DR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 2.2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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MC74VHC74DTG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F8DF820&compId=MC74VHC74-D.pdf?ci_sign=4e0a659abce467d5ff158d5eef1bc839bdaa37f6
MC74VHC74DTG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; tube
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Supply voltage: 2.2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: tube
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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MC74VHC74DTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B64B9F8DF820&compId=MC74VHC74-D.pdf?ci_sign=4e0a659abce467d5ff158d5eef1bc839bdaa37f6
MC74VHC74DTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: TSSOP14
Supply voltage: 2.2...5.5V DC
Mounting: SMD
Number of channels: 2
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Produkt ist nicht verfügbar
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74VHCT04AMTCX ONSM-S-A0003584937-1.pdf?t.download=true&u=5oefqw
74VHCT04AMTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: hex; 6
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: NOT
Family: VHCT
Mounting: SMD
Produkt ist nicht verfügbar
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MC74VHCT04ADR2G mc74vhct04a-d.pdf
MC74VHCT04ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 20uA
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: SO14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: hex; 6
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS; TTL
Family: VHCT
Mounting: SMD
Produkt ist nicht verfügbar
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MC74VHCT04ADTR2G mc74vhct04a-d.pdf
MC74VHCT04ADTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP14
Number of inputs: 1
Supply voltage: 4.5...5.5V DC
Number of channels: hex; 6
Quiescent current: 20µA
Kind of package: reel; tape
Kind of gate: NOT
Technology: CMOS; TTL
Family: VHCT
Mounting: SMD
Produkt ist nicht verfügbar
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74VHC157MTC FAIRS24896-1.pdf?t.download=true&u=5oefqw
74VHC157MTC
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; SMD; TSSOP16; VHC; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Quiescent current: 40µA
Kind of package: tube
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Produkt ist nicht verfügbar
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