| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 2N3904TA | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2N3904TF | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2N3904TAR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1.5W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2SC5706-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK Polarisation: bipolar Case: DPAK Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Power dissipation: 0.8W Collector current: 5A Collector-emitter voltage: 50V Current gain: 200...560 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| DTA113EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NSVDTA113EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Quantity in set/package: 8000pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2901VDTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA Type of integrated circuit: comparator Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: TSSOP14 Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2901DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA Type of integrated circuit: comparator Case: TSSOP14 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA Input offset voltage: 7mV Operating voltage: 3...36V Number of comparators: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2901EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA Type of integrated circuit: comparator Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: -40...105°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2901VDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA Type of integrated circuit: comparator Number of comparators: 4 Operating voltage: 3...36V Mounting: SMT Case: SO14 Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SZMMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BSS64LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Frequency: 60MHz Collector-emitter voltage: 80V Current gain: 20 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.225W Polarisation: bipolar Kind of package: reel; tape |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJE3055TG | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 125W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 125W Case: TO220AB Current gain: 20...100 Mounting: THT Kind of package: tube Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCP260N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 45A Power dissipation: 156W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCPF260N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 45A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.26Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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KSP42TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Mounting: THT Collector current: 0.5A Power dissipation: 0.625W Current gain: 40 Collector-emitter voltage: 300V Frequency: 50MHz Kind of package: Ammo Pack Polarisation: bipolar Type of transistor: NPN Case: TO92 Formed |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KSP42BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Mounting: THT Collector current: 0.5A Power dissipation: 0.625W Current gain: 40 Collector-emitter voltage: 300V Frequency: 50MHz Kind of package: bulk Polarisation: bipolar Type of transistor: NPN Case: TO92 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCV78L15ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCP7N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCA47N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: TO3P Gate-source voltage: ±30V On-state resistance: 73mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMQ8205A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12 Type of transistor: N/P-MOSFET x2 Power dissipation: 2.5W Case: WDFN12 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar On-state resistance: 51/147mΩ Drain current: 3A Drain-source voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931ACD2TR4G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 2.7...29.5V Output current: 0.1A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931ACDR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 2.7...29.5V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931ADT-5.0RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931AD2T-5R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931AZ-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931D2T-5.0R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM2931Z-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| M74HCT4053ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Supply voltage: 2...6V DC; 2...12V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMD8240LET40 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12 Case: PQFN12 Drain-source voltage: 40V Drain current: 73A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET x2 Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 489A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMD8240L | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12 Case: PQFN12 Drain-source voltage: 40V Drain current: 62A On-state resistance: 3.95mΩ Type of transistor: N-MOSFET x2 Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 464A Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVBS240LNT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Case: SMB Max. off-state voltage: 40V Max. load current: 4A Max. forward voltage: 0.55V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 25A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGH75T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGH75T65UPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FGH75T65UPD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCP260N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 30A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FCP360N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 25A Power dissipation: 83W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVD260N65S3T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 30A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 23.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NVD360N65S3T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 25A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| LM293DMR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape; Iio: 5nA Type of integrated circuit: comparator Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: Micro8 Kind of package: reel; tape Input bias current: 20nA Operating temperature: -25...85°C Input offset voltage: 5mV Input offset current: 5nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTD3055-094T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 45A Gate charge: 10.9nC |
auf Bestellung 2428 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD3055-150T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Power dissipation: 28.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 27A Gate charge: 7.1nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC33201DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2.2MHz Mounting: SMT Case: SO8 Slew rate: 1V/μs Operating temperature: -40...105°C Input offset voltage: 9mV Voltage supply range: ± 1.8...12V DC Kind of package: reel; tape Input bias current: 0.25µA Input offset current: 100nA Number of channels: single |
Produkt ist nicht verfügbar |
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| MC33204DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; TSSOP14; ±1.8÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2.2MHz Mounting: SMT Case: TSSOP14 Slew rate: 1V/μs Operating temperature: -40...105°C Input offset voltage: 13mV Voltage supply range: ± 1.8...12V DC Kind of package: reel; tape Input bias current: 0.25µA Input offset current: 100nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC33201VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 2.2MHz Mounting: SMT Case: SO8 Slew rate: 1V/μs Operating temperature: -55...125°C Input offset voltage: 13mV Voltage supply range: ± 1.8...12V DC Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 200nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2SA2222SG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 10A; 25W; TO220FP Collector current: 10A Power dissipation: 25W Collector-emitter voltage: 50V Current gain: 150...450 Frequency: 230MHz Polarisation: bipolar Kind of package: tube Type of transistor: PNP Mounting: THT Case: TO220FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 2SC6144SG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP Type of transistor: NPN Mounting: THT Case: TO220FP Kind of package: tube Collector current: 10A Power dissipation: 25W Collector-emitter voltage: 50V Current gain: 200...560 Polarisation: bipolar Frequency: 330MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC33074DG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: tube Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
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| MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; TSSOP14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: quad Case: TSSOP14 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
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| MC79L15ABPRPG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
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| MC79L15ACPRPG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
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| ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| ISL9V3040S3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| ISL9V5045S3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 43A Power dissipation: 300W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
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| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: dual |
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| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; WQFN10; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: WQFN10 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: dual |
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: dual |
Produkt ist nicht verfügbar |
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| NSBA143EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963 Case: SOT963 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 269mW Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 |
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| NSBA143EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.5W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 |
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Im Einkaufswagen Stück im Wert von UAH |
| 2N3904TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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| 2N3904TF |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
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| 2N3904TAR |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
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| 2SC5706-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.8W
Collector current: 5A
Collector-emitter voltage: 50V
Current gain: 200...560
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 0.8W; DPAK
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 0.8W
Collector current: 5A
Collector-emitter voltage: 50V
Current gain: 200...560
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Stück im Wert von UAH
| DTA113EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Quantity in set/package: 3000pcs.
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| NSVDTA113EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Quantity in set/package: 8000pcs.
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Quantity in set/package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
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| LM2901VDTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| LM2901DTBR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Input offset voltage: 7mV
Operating voltage: 3...36V
Number of comparators: 4
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Input offset voltage: 7mV
Operating voltage: 3...36V
Number of comparators: 4
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM2901EDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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| LM2901VDR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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| SZMMSZ5223BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| BSS64LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 60MHz
Collector-emitter voltage: 80V
Current gain: 20
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Frequency: 60MHz
Collector-emitter voltage: 80V
Current gain: 20
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.225W
Polarisation: bipolar
Kind of package: reel; tape
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 455+ | 0.16 EUR |
| 658+ | 0.11 EUR |
| 772+ | 0.093 EUR |
| 1731+ | 0.041 EUR |
| 1800+ | 0.04 EUR |
| MJE3055TG | |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
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| FCP260N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 156W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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Stück im Wert von UAH
| FCPF260N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 45A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 45A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| KSP42TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Mounting: THT
Collector current: 0.5A
Power dissipation: 0.625W
Current gain: 40
Collector-emitter voltage: 300V
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Type of transistor: NPN
Case: TO92 Formed
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Mounting: THT
Collector current: 0.5A
Power dissipation: 0.625W
Current gain: 40
Collector-emitter voltage: 300V
Frequency: 50MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Type of transistor: NPN
Case: TO92 Formed
Produkt ist nicht verfügbar
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| KSP42BU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Mounting: THT
Collector current: 0.5A
Power dissipation: 0.625W
Current gain: 40
Collector-emitter voltage: 300V
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Type of transistor: NPN
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Mounting: THT
Collector current: 0.5A
Power dissipation: 0.625W
Current gain: 40
Collector-emitter voltage: 300V
Frequency: 50MHz
Kind of package: bulk
Polarisation: bipolar
Type of transistor: NPN
Case: TO92
Produkt ist nicht verfügbar
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| NCV78L15ABDR2G |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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| FCP7N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FCA47N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
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| FDMQ8205A |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Power dissipation: 2.5W
Case: WDFN12
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 51/147mΩ
Drain current: 3A
Drain-source voltage: 100V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100V; 3A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Power dissipation: 2.5W
Case: WDFN12
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 51/147mΩ
Drain current: 3A
Drain-source voltage: 100V
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| LM2931ACD2TR4G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931ACDR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2.7÷29.5V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 2.7...29.5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931ADT-5.0RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931AD2T-5R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931AZ-5.0RPG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| LM2931D2T-5.0R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931Z-5.0RPG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| M74HCT4053ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Supply voltage: 2...6V DC; 2...12V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 3
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Supply voltage: 2...6V DC; 2...12V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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| FDMD8240LET40 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Case: PQFN12
Drain-source voltage: 40V
Drain current: 73A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 489A
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Case: PQFN12
Drain-source voltage: 40V
Drain current: 73A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 489A
Mounting: SMD
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| FDMD8240L |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12
Case: PQFN12
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 3.95mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 464A
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 62A; Idm: 464A; 42W; PQFN12
Case: PQFN12
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 3.95mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 464A
Mounting: SMD
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| NRVBS240LNT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Max. off-state voltage: 40V
Max. load current: 4A
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Max. off-state voltage: 40V
Max. load current: 4A
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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| FGH75T65UPD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FCP260N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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| FCP360N65S3R0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 25A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 25A
Power dissipation: 83W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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| NVD260N65S3T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 23.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 23.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVD360N65S3T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 25A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 25A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| LM293DMR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: Micro8
Kind of package: reel; tape
Input bias current: 20nA
Operating temperature: -25...85°C
Input offset voltage: 5mV
Input offset current: 5nA
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2÷36V; SMT; Micro8; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: Micro8
Kind of package: reel; tape
Input bias current: 20nA
Operating temperature: -25...85°C
Input offset voltage: 5mV
Input offset current: 5nA
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| NTD3055-094T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Gate charge: 10.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
Gate charge: 10.9nC
auf Bestellung 2428 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 84+ | 0.86 EUR |
| 98+ | 0.73 EUR |
| 174+ | 0.41 EUR |
| 184+ | 0.39 EUR |
| NTD3055-150T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 27A
Gate charge: 7.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 27A; 28.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Power dissipation: 28.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 27A
Gate charge: 7.1nC
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| NTD3055L170T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| MC33201DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 9mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 100nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 9mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 100nA
Number of channels: single
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| MC33204DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; TSSOP14; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 13mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 100nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; TSSOP14; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...105°C
Input offset voltage: 13mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.25µA
Input offset current: 100nA
Number of channels: quad
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| MC33201VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: SO8
Slew rate: 1V/μs
Operating temperature: -55...125°C
Input offset voltage: 13mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Mounting: SMT
Case: SO8
Slew rate: 1V/μs
Operating temperature: -55...125°C
Input offset voltage: 13mV
Voltage supply range: ± 1.8...12V DC
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Number of channels: single
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| 2SA2222SG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 10A; 25W; TO220FP
Collector current: 10A
Power dissipation: 25W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 230MHz
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO220FP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 10A; 25W; TO220FP
Collector current: 10A
Power dissipation: 25W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 230MHz
Polarisation: bipolar
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO220FP
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| 2SC6144SG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP
Type of transistor: NPN
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 10A
Power dissipation: 25W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Frequency: 330MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP
Type of transistor: NPN
Mounting: THT
Case: TO220FP
Kind of package: tube
Collector current: 10A
Power dissipation: 25W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Frequency: 330MHz
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| MC33074DG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: tube
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: tube
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; TSSOP14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; TSSOP14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC79L15ABPRPG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| MC79L15ACPRPG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| ISL9V3040D3ST-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| ISL9V3040S3ST-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| ISL9V5045S3ST-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| MC34072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
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| MC34072AMTTBG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; WQFN10; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: WQFN10
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; WQFN10; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: WQFN10
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
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| MC34072VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: dual
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| NSBA143EDP6T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 269mW
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
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| NSBA143EDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.5W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 4000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
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