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NVMFWS0D7N04XMT1G ONSEMI nvmfws0d7n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 323A; Idm: 900A; 134W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 323A
Pulsed drain current: 900A
Power dissipation: 134W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 71.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS2D3N04XMT1G ONSEMI nvmfws2d3n04xm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS2D3P04M8LT1G ONSEMI nvmfs2d3p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFWS3D0P04M8LT1G ONSEMI nvmfs3d0p04m8l-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
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HCPL2631SD HCPL2631SD ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACACB8ECA9CB3E27&compId=HCPL2631SD.pdf?ci_sign=44300f5e39df52fced2333a5ad8027c2de961698 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
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74AC139MTCX 74AC139MTCX ONSEMI ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
auf Bestellung 1819 Stücke:
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59+1.23 EUR
119+0.6 EUR
140+0.51 EUR
202+0.35 EUR
213+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 59
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1SMB5932BT3G 1SMB5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4203 Stücke:
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193+0.37 EUR
230+0.31 EUR
266+0.27 EUR
417+0.17 EUR
506+0.14 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 193
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SZ1SMB5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FSV1045V ONSEMI fsv1045v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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1SMB5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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1SMA5945BT3G 1SMA5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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SZ1SMB5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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SZ1SMA5945BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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NSVJ6904DSB6T1G ONSEMI nsvj6904dsb6-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
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NCS2001SN2T1G ONSEMI ncs2001-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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NCS2001SN1T1G ONSEMI ncs2001-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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NCS2001SQ2T2G ONSEMI ncs2001-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SC70-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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NCS20034DR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: quad
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LM2595DSADJR4G ONSEMI lm2595-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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MURD620CTT4G MURD620CTT4G ONSEMI murd620ct-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
123+0.58 EUR
134+0.53 EUR
186+0.39 EUR
197+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 95
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MURD550PFT4G ONSEMI mur550-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 520V; 5A; 95ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 520V
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 95ns
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NVMFS5C638NLT1G ONSEMI nvmfs5c638nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
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NVMFS5C638NLWFT1G ONSEMI nvmfs5c638nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
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NVMYS3D3N06CLTWG ONSEMI nvmys3d3n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56
Case: LFPAK56
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
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FDD9409-F085 ONSEMI fdd9409_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJB44H11G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
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MJB44H11T4G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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NJW44H11G ONSEMI njw44h11-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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NJVMJB44H11T4G ONSEMI mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MC33067DWR2G ONSEMI mc34067-d.pdf Category: Unclassified
Description: MC33067DWR2G
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.81 EUR
Mindestbestellmenge: 1000
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NCV8535MN500R2G ONSEMI ncv8535-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
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CAT25128VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D160D5&compId=CAT25128-D.pdf?ci_sign=06e8bd5e3fa7732c571b49b70a5839eddcf02843 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
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CAT25128VP2I-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D2A0D5&compId=CAT25128-D.pdf?ci_sign=ba7dcfa85aed5d78877423d9b88f007400295b3c Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TDFN8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
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CAT25128XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D3E0D5&compId=CAT25128-D.pdf?ci_sign=14b42324c573b044f9825be2ca5ac65f97cdbacd Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
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CAT25128YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D520D5&compId=CAT25128-D.pdf?ci_sign=8eeacb258c98eddc2c3046f6069fafcf1c0e8018 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
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CAV25128VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB835E0D5&compId=CAV25128-D.pdf?ci_sign=8bddfed31eb213e3b248ffd41ce8bd7a2f63351d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
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CAV25128YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83720D5&compId=CAV25128-D.pdf?ci_sign=17423a154a0fff420cd41e64eae91a5be818f762 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FMB2222A ONSEMI FFB2222A%2C%20FMB2222A%2C%20MMPQ2222A.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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NVMFS016N10MCLT1G ONSEMI nvmfs016n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS016N10MCLT1G ONSEMI nvmfs016n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMYS016N10MCLTWG ONSEMI nvmys016n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCV47821PAAJR2G ONSEMI ncv47821-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷20V; 0.2A; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3...20V
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Produkt ist nicht verfügbar
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FDB024N08BL7 ONSEMI fdb024n08bl7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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FDME1024NZT
+1
 		FDME1024NZT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF65B6CDE37E28&compId=FDME1024NZT.pdf?ci_sign=993439da7b8b4701a3a90bf24cfe129a96e3cdfa Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
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NTMFS4C024NT1G ONSEMI ntmfs4c024n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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GRUMMUN2216LT1G ONSEMI Category: Unclassified
Description: GRUMMUN2216LT1G
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.026 EUR
Mindestbestellmenge: 6000
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NSI45020JZT1G ONSEMI nsi45020jz-d.pdf Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.4 EUR
Mindestbestellmenge: 1000
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FES10D ONSEMI fes10d-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 200V
Case: TO277
Produkt ist nicht verfügbar
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FES10J ONSEMI fes10d-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; TO277
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. off-state voltage: 0.6kV
Case: TO277
Produkt ist nicht verfügbar
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FES10G ONSEMI fes10d-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 0.4kV
Case: TO277
Produkt ist nicht verfügbar
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FOD2741B FOD2741B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6A87D2AF1EA17&compId=FOD2741B.pdf?ci_sign=461b573736315c3d0156a7cc41e9d322c2b00a88 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
auf Bestellung 608 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
122+0.59 EUR
129+0.56 EUR
132+0.54 EUR
139+0.51 EUR
500+0.5 EUR
Mindestbestellmenge: 109
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FOD2741BS ONSEMI fod2741b-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.17 EUR
Mindestbestellmenge: 1000
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MBR120VLSFT3G ONSEMI mbr120vlsft1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.31 EUR
Mindestbestellmenge: 10000
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MJE5731G ONSEMI mje5730-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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MJE5731AG ONSEMI mje5730-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 375V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 375V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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NXH600N65L4Q2F2SG ONSEMI nxh600n65l4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Application: for UPS; Inverter
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Collector current: 600A
Technology: SiC
Semiconductor structure: diode/transistor
Case: PIM41
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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1SMB5930BT3G 1SMB5930BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1821 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
209+0.34 EUR
341+0.21 EUR
428+0.17 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 157
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SZ1SMA5930BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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SZ1SMB5930BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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FDD8647L FDD8647L ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE9042B148DE28&compId=FDD8647L.pdf?ci_sign=322b00147c168076b5bee41d23fd56639f1112b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
57+1.26 EUR
65+1.1 EUR
Mindestbestellmenge: 45
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NVMFWS0D7N04XMT1G nvmfws0d7n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 323A; Idm: 900A; 134W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 323A
Pulsed drain current: 900A
Power dissipation: 134W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 71.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS2D3N04XMT1G nvmfws2d3n04xm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -222A; Idm: -900A; 103W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -222A
Pulsed drain current: -900A
Power dissipation: 103W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS3D0P04M8LT1G nvmfs3d0p04m8l-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -183A
Pulsed drain current: -900A
Power dissipation: 86W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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HCPL2631SD pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACACB8ECA9CB3E27&compId=HCPL2631SD.pdf?ci_sign=44300f5e39df52fced2333a5ad8027c2de961698
HCPL2631SD
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 5kV/μs
Produkt ist nicht verfügbar
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74AC139MTCX ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw
74AC139MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
119+0.6 EUR
140+0.51 EUR
202+0.35 EUR
213+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 59
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1SMB5932BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5932BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 4203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
230+0.31 EUR
266+0.27 EUR
417+0.17 EUR
506+0.14 EUR
556+0.13 EUR
589+0.12 EUR
Mindestbestellmenge: 193
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SZ1SMB5932BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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FSV1045V fsv1045v-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1SMB5945BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Produkt ist nicht verfügbar
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1SMA5945BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5945BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Produkt ist nicht verfügbar
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SZ1SMB5945BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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SZ1SMA5945BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 68V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NSVJ6904DSB6T1G nsvj6904dsb6-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
Produkt ist nicht verfügbar
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NCS2001SN2T1G ncs2001-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Produkt ist nicht verfügbar
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NCS2001SN1T1G ncs2001-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCS2001SQ2T2G ncs2001-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SC70-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCS20034DR2G ncs2003-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Voltage supply range: 1.7...5.5V DC
Bandwidth: 7MHz
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM2595DSADJR4G lm2595-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MURD620CTT4G murd620ct-d.pdf
MURD620CTT4G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: common cathode; double
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 35ns
auf Bestellung 1775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
123+0.58 EUR
134+0.53 EUR
186+0.39 EUR
197+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
MURD550PFT4G mur550-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 520V; 5A; 95ns; DPAK; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 520V
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 95ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C638NLT1G nvmfs5c638nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C638NLWFT1G nvmfs5c638nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 50W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS3D3N06CLTWG nvmys3d3n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 32W; LFPAK56
Case: LFPAK56
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40.7nC
On-state resistance: 3mΩ
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 133A
Pulsed drain current: 811A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD9409-F085 fdd9409_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11T4G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJW44H11G njw44h11-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33067DWR2G mc34067-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: MC33067DWR2G
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.81 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
NCV8535MN500R2G ncv8535-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25128VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D160D5&compId=CAT25128-D.pdf?ci_sign=06e8bd5e3fa7732c571b49b70a5839eddcf02843
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25128VP2I-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D2A0D5&compId=CAT25128-D.pdf?ci_sign=ba7dcfa85aed5d78877423d9b88f007400295b3c
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TDFN8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25128XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D3E0D5&compId=CAT25128-D.pdf?ci_sign=14b42324c573b044f9825be2ca5ac65f97cdbacd
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25128YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CB038D520D5&compId=CAT25128-D.pdf?ci_sign=8eeacb258c98eddc2c3046f6069fafcf1c0e8018
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 140ns
Operating voltage: 1.8...5.5V
Memory: 128kb EEPROM
Clock frequency: 20MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV25128VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB835E0D5&compId=CAV25128-D.pdf?ci_sign=8bddfed31eb213e3b248ffd41ce8bd7a2f63351d
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: SOIC8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV25128YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83720D5&compId=CAV25128-D.pdf?ci_sign=17423a154a0fff420cd41e64eae91a5be818f762
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 128kb EEPROM
Clock frequency: 10MHz
Memory organisation: 16kx8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FMB2222A FFB2222A%2C%20FMB2222A%2C%20MMPQ2222A.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS016N10MCLT1G nvmfs016n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS016N10MCLT1G nvmfs016n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMYS016N10MCLTWG nvmys016n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV47821PAAJR2G ncv47821-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3.3÷20V; 0.2A; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP14
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3...20V
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Produkt ist nicht verfügbar
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FDB024N08BL7 fdb024n08bl7-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDME1024NZT pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF65B6CDE37E28&compId=FDME1024NZT.pdf?ci_sign=993439da7b8b4701a3a90bf24cfe129a96e3cdfa
FDME1024NZT
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Technology: PowerTrench®
Produkt ist nicht verfügbar
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NTMFS4C024NT1G ntmfs4c024n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GRUMMUN2216LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMMUN2216LT1G
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.026 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
NSI45020JZT1G nsi45020jz-d.pdf
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.4 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FES10D fes10d-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 200V
Case: TO277
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FES10J fes10d-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; TO277
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Load current: 10A
Max. off-state voltage: 0.6kV
Case: TO277
Produkt ist nicht verfügbar
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FES10G fes10d-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; TO277; 40ns
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 40ns
Load current: 10A
Max. off-state voltage: 0.4kV
Case: TO277
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD2741B pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6A87D2AF1EA17&compId=FOD2741B.pdf?ci_sign=461b573736315c3d0156a7cc41e9d322c2b00a88
FOD2741B
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
auf Bestellung 608 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
122+0.59 EUR
129+0.56 EUR
132+0.54 EUR
139+0.51 EUR
500+0.5 EUR
Mindestbestellmenge: 109
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FOD2741BS fod2741b-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.17 EUR
Mindestbestellmenge: 1000
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MBR120VLSFT3G mbr120vlsft1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.31 EUR
Mindestbestellmenge: 10000
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MJE5731G mje5730-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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MJE5731AG mje5730-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 375V; 1A; 40W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 375V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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NXH600N65L4Q2F2SG nxh600n65l4q2f2-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 600A; PIM41; SiC
Application: for UPS; Inverter
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Collector current: 600A
Technology: SiC
Semiconductor structure: diode/transistor
Case: PIM41
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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1SMB5930BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5930BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1821 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
209+0.34 EUR
341+0.21 EUR
428+0.17 EUR
562+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 157
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SZ1SMA5930BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5930BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD8647L pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE9042B148DE28&compId=FDD8647L.pdf?ci_sign=322b00147c168076b5bee41d23fd56639f1112b1
FDD8647L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
57+1.26 EUR
65+1.1 EUR
Mindestbestellmenge: 45
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