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NV25256DTHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256DWHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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NV25256MUW3VTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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MC14081BDR2G MC14081BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: reel; tape
Family: HEF4000B
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MC14077BDG MC14077BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5 Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
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MC14077BDR2G MC14077BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5 Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
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MC14071BDG MC14071BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688D4866BAFC745&compId=MC140xxB.PDF?ci_sign=d2dd861d9297f857a83ee5639f2d70ba7d5dac73 Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: tube
Family: HEF4000B
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MC14071BDR2G MC14071BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: reel; tape
Family: HEF4000B
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MC14071BDTR2G MC14071BDTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: reel; tape
Family: HEF4000B
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NLV14071BDTR2G ONSEMI mc14001b-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.19 EUR
Mindestbestellmenge: 2500
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NCV8402ADDR2G NCV8402ADDR2G ONSEMI ncv8402d-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.4A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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NCV8402ASTT3G NCV8402ASTT3G ONSEMI ncv8402-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
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BDX33BG BDX33BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD4A4BCC74E469&compId=BDX33BG.PDF?ci_sign=7381c718cd4a46044ec3959385451848406643d0 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 10A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 70W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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NCP114ASN280T1G ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.255V
Output voltage: 2.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCP114ASN180T1G ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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BAS116LT1G BAS116LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 209 Stücke:
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209+0.34 EUR
Mindestbestellmenge: 209
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BAS116TT1G ONSEMI bas116tt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAS116LT1G SBAS116LT1G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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NSVBAS116LT3G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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FDP8447L FDP8447L ONSEMI fdp8447l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
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SZMM3Z3V3T1G SZMM3Z3V3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Case: SOD323
Tolerance: ±6%
Semiconductor structure: single diode
Zener voltage: 3.3V
Application: automotive industry
Power dissipation: 0.3W
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Mounting: SMD
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
317+0.23 EUR
458+0.16 EUR
Mindestbestellmenge: 186
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MC74HC73ADG MC74HC73ADG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FAD1820&compId=MC74HC73-D.pdf?ci_sign=46c82f69dc52b3179b35cc4444a29430d5ac1b5f Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
111+0.65 EUR
141+0.51 EUR
213+0.34 EUR
226+0.32 EUR
275+0.31 EUR
Mindestbestellmenge: 64
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MC74HC73ADR2G MC74HC73ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FAD1820&compId=MC74HC73-D.pdf?ci_sign=46c82f69dc52b3179b35cc4444a29430d5ac1b5f Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: negative-edge-triggered
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MC74HC73ADTR2G MC74HC73ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FAD1820&compId=MC74HC73-D.pdf?ci_sign=46c82f69dc52b3179b35cc4444a29430d5ac1b5f Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: negative-edge-triggered
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BC846ALT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.019 EUR
Mindestbestellmenge: 10000
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BZX84C13LT1G BZX84C13LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 description Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX84C
auf Bestellung 6050 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
962+0.074 EUR
1573+0.045 EUR
2213+0.032 EUR
2942+0.024 EUR
3106+0.023 EUR
3206+0.022 EUR
Mindestbestellmenge: 556
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SZBZX84C13ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C13LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX84C
Application: automotive industry
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4N27M 4N27M ONSEMI pVersion=0046&contRep=ZT&docId=E245323C5A53D6F1A303005056AB0C4F&compId=4N25SM.pdf?ci_sign=a680d5142a460b38e130e21e8117f48ed6c59652 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Collector-emitter voltage: 30V
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4N27M 4N27M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 10%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 709 Stücke:
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100+0.72 EUR
158+0.45 EUR
214+0.33 EUR
285+0.25 EUR
302+0.24 EUR
Mindestbestellmenge: 100
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1N5956BRLG 1N5956BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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432+0.17 EUR
468+0.15 EUR
496+0.14 EUR
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1N5956BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
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FFSP3065A FFSP3065A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Max. off-state voltage: 650V
Max. load current: 75A
Max. forward voltage: 2.4V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Leakage current: 0.6mA
Power dissipation: 40W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Produkt ist nicht verfügbar
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FFSP3065B ONSEMI ffsp3065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Produkt ist nicht verfügbar
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GBPC35005 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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FDMA430NZ FDMA430NZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF3849E3411E28&compId=FDMA430NZ.pdf?ci_sign=3c05f31baccfea7e38d280e50efe3a12dc032612 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NJW1302G NJW1302G ONSEMI njw3281-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 200W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Collector-emitter voltage: 250V
Current gain: 45...150
Collector current: 15A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Produkt ist nicht verfügbar
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LL4148 LL4148 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78196A84C199DE259&compId=LL4148.pdf?ci_sign=fcac481b063a2f9d7c5d31008768d35cf503dc6f Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 9646 Stücke:
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807+0.089 EUR
926+0.077 EUR
1489+0.048 EUR
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4274+0.017 EUR
Mindestbestellmenge: 556
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FSB50550AS ONSEMI fsb50550as-d.pdf Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 20250 Stücke:
Lieferzeit 14-21 Tag (e)
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MMBTA92 MMBTA92 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NC7SZ38M5X ONSEMI FAIRS29603-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; 1.65÷5.5VDC; 20uA
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: single; 1
Quiescent current: 20µA
Kind of output: open drain
Kind of package: reel; tape
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: SC74A
Number of inputs: 2
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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SMF05CT2G ONSEMI smf05c-d.pdf Category: Diodes - Unclassified
Description: SMF05CT2G
auf Bestellung 9000 Stücke:
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3000+0.17 EUR
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NTMFS0D8N03CT1G ONSEMI ntmfs0d8n03c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 337A
Pulsed drain current: 900A
Power dissipation: 150W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.74mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMQ86530L ONSEMI fdmq86530l-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Produkt ist nicht verfügbar
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RB751S40T5G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVRB751S40T1G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVRB751S40T5G ONSEMI rb751s40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC1G07DTT1G
+1
 		MC74VHC1G07DTT1G ONSEMI mc74vhc1g07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSSOP5; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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FDBL86063-F085 ONSEMI fdbl86063_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDBL86063 ONSEMI Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD8104MUTAG ONSEMI esd8104-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
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FDD86252 FDD86252 ONSEMI fdd86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
59+1.22 EUR
71+1.02 EUR
75+0.96 EUR
1000+0.94 EUR
Mindestbestellmenge: 55
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4N35M 4N35M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
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NUP1301ML3T1G NUP1301ML3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BE9367D5A540CE&compId=NUP1301ML3T1G.PDF?ci_sign=dd30dc4b5dd75dbe50d75d5d76913a96e45f8f00 Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
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515+0.14 EUR
575+0.12 EUR
660+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 340
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SZNUP1301ML3T1G ONSEMI nup1301ml3t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NV25256DTHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV25256DWHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV25256MUW3VTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV25256VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV25256YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC14081BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14081BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: reel; tape
Family: HEF4000B
Produkt ist nicht verfügbar
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MC14077BDG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5
MC14077BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14077BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C3DF820&compId=MC14070B-D.pdf?ci_sign=7dd0b57ccb69513c95e0643176112b21e6bbcdb5
MC14077BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XNOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XNOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
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MC14071BDG pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688D4866BAFC745&compId=MC140xxB.PDF?ci_sign=d2dd861d9297f857a83ee5639f2d70ba7d5dac73
MC14071BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: tube
Family: HEF4000B
Produkt ist nicht verfügbar
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MC14071BDR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14071BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: reel; tape
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14071BDTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14071BDTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Delay time: 130ns
Kind of package: reel; tape
Family: HEF4000B
Produkt ist nicht verfügbar
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NLV14071BDTR2G mc14001b-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.19 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NCV8402ADDR2G ncv8402d-d.pdf
NCV8402ADDR2G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5.4A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5.4A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
Produkt ist nicht verfügbar
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NCV8402ASTT3G ncv8402-d.pdf
NCV8402ASTT3G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 2; N-Channel; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 42V DC
Application: automotive industry
Produkt ist nicht verfügbar
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BDX33BG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD4A4BCC74E469&compId=BDX33BG.PDF?ci_sign=7381c718cd4a46044ec3959385451848406643d0
BDX33BG
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 10A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 70W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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NCP114ASN280T1G ncp114-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.255V
Output voltage: 2.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Produkt ist nicht verfügbar
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NCP114ASN180T1G ncp114-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
Produkt ist nicht verfügbar
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BAS116LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403
BAS116LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ifsm: 0.5A; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
Mindestbestellmenge: 209
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BAS116TT1G bas116tt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Kind of package: reel; tape
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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SBAS116LT1G bas116lt1-d.pdf
SBAS116LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVBAS116LT3G bas116lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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FDP8447L fdp8447l-d.pdf
FDP8447L
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13.7mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SZMM3Z3V3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
SZMM3Z3V3T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Case: SOD323
Tolerance: ±6%
Semiconductor structure: single diode
Zener voltage: 3.3V
Application: automotive industry
Power dissipation: 0.3W
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Mounting: SMD
auf Bestellung 473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
317+0.23 EUR
458+0.16 EUR
Mindestbestellmenge: 186
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MC74HC73ADG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FAD1820&compId=MC74HC73-D.pdf?ci_sign=46c82f69dc52b3179b35cc4444a29430d5ac1b5f
MC74HC73ADG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; tube
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Trigger: negative-edge-triggered
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
111+0.65 EUR
141+0.51 EUR
213+0.34 EUR
226+0.32 EUR
275+0.31 EUR
Mindestbestellmenge: 64
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MC74HC73ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FAD1820&compId=MC74HC73-D.pdf?ci_sign=46c82f69dc52b3179b35cc4444a29430d5ac1b5f
MC74HC73ADR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: negative-edge-triggered
Produkt ist nicht verfügbar
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MC74HC73ADTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848FAD1820&compId=MC74HC73-D.pdf?ci_sign=46c82f69dc52b3179b35cc4444a29430d5ac1b5f
MC74HC73ADTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: negative-edge-triggered
Produkt ist nicht verfügbar
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BC846ALT3G bc846alt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.019 EUR
Mindestbestellmenge: 10000
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BZX84C13LT1G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C13LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX84C
auf Bestellung 6050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
962+0.074 EUR
1573+0.045 EUR
2213+0.032 EUR
2942+0.024 EUR
3106+0.023 EUR
3206+0.022 EUR
Mindestbestellmenge: 556
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SZBZX84C13ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C13LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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4N27M pVersion=0046&contRep=ZT&docId=E245323C5A53D6F1A303005056AB0C4F&compId=4N25SM.pdf?ci_sign=a680d5142a460b38e130e21e8117f48ed6c59652
4N27M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Collector-emitter voltage: 30V
Produkt ist nicht verfügbar
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4N27M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a
4N27M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 10%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
158+0.45 EUR
214+0.33 EUR
285+0.25 EUR
302+0.24 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
1N5956BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5956BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
auf Bestellung 5536 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
336+0.21 EUR
400+0.18 EUR
432+0.17 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 278
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1N5956BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
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FFSP3065A pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380
FFSP3065A
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Max. off-state voltage: 650V
Max. load current: 75A
Max. forward voltage: 2.4V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Leakage current: 0.6mA
Power dissipation: 40W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Produkt ist nicht verfügbar
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FFSP3065B ffsp3065b-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Produkt ist nicht verfügbar
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GBPC35005 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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FDMA430NZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF3849E3411E28&compId=FDMA430NZ.pdf?ci_sign=3c05f31baccfea7e38d280e50efe3a12dc032612
FDMA430NZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NJW1302G njw3281-d.pdf
NJW1302G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 200W; TO3P
Case: TO3P
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Collector-emitter voltage: 250V
Current gain: 45...150
Collector current: 15A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Produkt ist nicht verfügbar
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LL4148 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78196A84C199DE259&compId=LL4148.pdf?ci_sign=fcac481b063a2f9d7c5d31008768d35cf503dc6f
LL4148
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 9646 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.089 EUR
926+0.077 EUR
1489+0.048 EUR
2110+0.034 EUR
4033+0.018 EUR
4274+0.017 EUR
Mindestbestellmenge: 556
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FSB50550AS fsb50550as-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 20250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
450+8.47 EUR
Mindestbestellmenge: 450
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MMBTA92 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D66C6EB7A70A50&compId=MMBTA92-DTE.PDF?ci_sign=07397f4496537557f17dd7185ae7e21f99b317c4
MMBTA92
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NC7SZ38M5X FAIRS29603-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; 1.65÷5.5VDC; 20uA
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: single; 1
Quiescent current: 20µA
Kind of output: open drain
Kind of package: reel; tape
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: SC74A
Number of inputs: 2
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
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SMF05CT2G smf05c-d.pdf
Hersteller: ONSEMI
Category: Diodes - Unclassified
Description: SMF05CT2G
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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NTMFS0D8N03CT1G ntmfs0d8n03c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 337A; Idm: 900A; 150W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 337A
Pulsed drain current: 900A
Power dissipation: 150W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.74mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMQ86530L fdmq86530l-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 50A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Produkt ist nicht verfügbar
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RB751S40T5G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVRB751S40T1G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVRB751S40T5G rb751s40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FCB125N65S3 fcb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTPF125N65S3H ntpf125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT125N65S3 fcmt125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC1G07DTT1G mc74vhc1g07-d.pdf
MC74VHC1G07DTT1G
+1
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSSOP5; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: open drain
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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FDBL86063-F085 fdbl86063_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDBL86063
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD8104MUTAG esd8104-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
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FDD86252 fdd86252-d.pdf
FDD86252
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
59+1.22 EUR
71+1.02 EUR
75+0.96 EUR
1000+0.94 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
4N35M pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C166EF7DB740C7&compId=4N25M-ONS.pdf?ci_sign=b1004924a69c86a96d22fb1ed4a8e652a7f46283
4N35M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 100%@10mA
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
Mindestbestellmenge: 74
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NUP1301ML3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BE9367D5A540CE&compId=NUP1301ML3T1G.PDF?ci_sign=dd30dc4b5dd75dbe50d75d5d76913a96e45f8f00
NUP1301ML3T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
340+0.21 EUR
515+0.14 EUR
575+0.12 EUR
660+0.11 EUR
695+0.1 EUR
Mindestbestellmenge: 340
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SZNUP1301ML3T1G nup1301ml3t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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