auf Bestellung 9043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
10+ | 0.29 EUR |
11+ | 0.28 EUR |
500+ | 0.23 EUR |
1000+ | 0.077 EUR |
3000+ | 0.049 EUR |
6000+ | 0.044 EUR |
9000+ | 0.039 EUR |
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Technische Details DTC115TET1G onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 100 kOhms.
Weitere Produktangebote DTC115TET1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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DTC115TET1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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DTC115TET1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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DTC115TET1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 100 kOhms |
Produkt ist nicht verfügbar |
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DTC115TET1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 100 kOhms |
Produkt ist nicht verfügbar |
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DTC115TET1G | Hersteller : ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 160...350 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 100kΩ |
Produkt ist nicht verfügbar |