| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.02 EUR |
| 25+ | 15.65 EUR |
| 100+ | 13.51 EUR |
| 250+ | 12.44 EUR |
| 600+ | 12.09 EUR |
| 3000+ | 12.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UJ3C120150K3S Qorvo
Description: SICFET N-CH 1200V 18.4A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5.5V @ 10mA, Power Dissipation (Max): 166.7W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V, Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc), FET Type: N-Channel, Technology: SiCFET (Cascode SiCJFET), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote UJ3C120150K3S nach Preis ab 13.23 EUR bis 25.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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UJ3C120150K3S | onsemi |
 Description: SICFET N-CH 1200V 18.4A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5.5V @ 10mA Power Dissipation (Max): 166.7W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C120150K3S | Qorvo / UnitedSiC |
MOSFET 1200V/150mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth |
auf Bestellung 607 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3C120150K3S | onsemi |
SiC MOSFETs 1200V/150MOSICFETG3TO2 |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ3C120150K3S |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 18.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Power Dissipation (Max): 166.7W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 18.4A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 738 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Power Dissipation (Max): 166.7W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 12V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.23 EUR |
| 30+ | 14.04 EUR |
| UJ3C120150K3S |
|
Hersteller: Qorvo / UnitedSiC
MOSFET 1200V/150mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
MOSFET 1200V/150mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
auf Bestellung 607 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.5 EUR |
| 10+ | 21.24 EUR |
| 120+ | 17.58 EUR |
| 510+ | 15.29 EUR |
| 1020+ | 13.86 EUR |
| 2520+ | 13.61 EUR |
| UJ3C120150K3S |
|
Hersteller: onsemi
SiC MOSFETs 1200V/150MOSICFETG3TO2
SiC MOSFETs 1200V/150MOSICFETG3TO2
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.05 EUR |
| 10+ | 19.08 EUR |
| 100+ | 15.9 EUR |
| 600+ | 13.23 EUR |