| Anzahl | Preis |
|---|---|
| 3+ | 1.38 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.5 EUR |
| 5000+ | 0.46 EUR |
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Technische Details SSURHD8560W1T4G onsemi
Description: DIODE GEN PURP 600V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote SSURHD8560W1T4G nach Preis ab 0.62 EUR bis 1.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSURHD8560W1T4G | onsemi |
 Description: DIODE GEN PURP 600V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 1939 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSURHD8560W1T4G | ONN |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SSURHD8560W1T4G |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1939 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 15+ | 1.25 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.62 EUR |
| SSURHD8560W1T4G |
|
Hersteller: ONN
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH