FDP8860 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12240 pF @ 15 V
auf Bestellung 18336 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 239+ | 3.03 EUR |
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Technische Details FDP8860 Fairchild Semiconductor
Description: MOSFET N-CH 30V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V, Power Dissipation (Max): 254W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12240 pF @ 15 V.
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