NTTBC070NP10M5L onsemi
Hersteller: onsemi
Description: MOSFET N/P-CH 100V 3.5A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
Supplier Device Package: 8-WDFN (3x3)
Description: MOSFET N/P-CH 100V 3.5A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA
Supplier Device Package: 8-WDFN (3x3)
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.69 EUR |
13+ | 1.38 EUR |
100+ | 1.07 EUR |
500+ | 0.91 EUR |
1000+ | 0.74 EUR |
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Technische Details NTTBC070NP10M5L onsemi
Description: MOSFET N/P-CH 100V 3.5A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V, Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA, Supplier Device Package: 8-WDFN (3x3).
Weitere Produktangebote NTTBC070NP10M5L
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTTBC070NP10M5L | Hersteller : onsemi |
Description: MOSFET N/P-CH 100V 3.5A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 252pF @ 50V, 256pF @ 50V Rds On (Max) @ Id, Vgs: 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, 7.3nC @ 10V Vgs(th) (Max) @ Id: 3V @ 24µA, 4V @ 40µA Supplier Device Package: 8-WDFN (3x3) |
Produkt ist nicht verfügbar |
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NTTBC070NP10M5L | Hersteller : onsemi | MOSFET MV5_100V_N_P_IN DUALS AND SINGLE |
Produkt ist nicht verfügbar |