FDMS3669S ON Semiconductor
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.02 EUR |
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Technische Details FDMS3669S ON Semiconductor
Description: MOSFET 2N-CH 30V 13A 8PQFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, 2060pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 34nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, 2.5V @ 1mA, Supplier Device Package: 8-PQFN (5x6).
Weitere Produktangebote FDMS3669S nach Preis ab 0.97 EUR bis 4.01 EUR
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FDMS3669S | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : Fairchild Semiconductor |
Description: MOSFET 2N-CH 30V 13A 8PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, 2060pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 34nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA, 2.5V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 1778 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : onsemi / Fairchild |
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench |
auf Bestellung 46767 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3669S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 6169 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3669S | Hersteller : ONSEMI |
Description: ONSEMI - FDMS3669S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1778 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
Produkt ist nicht verfügbar |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
Produkt ist nicht verfügbar |
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| FDMS3669S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Mounting: SMD Case: Power56 Drain-source voltage: 30/30V Drain current: 24/60A On-state resistance: 14.5/7.1mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.2/2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24/34nC Kind of channel: enhancement Gate-source voltage: ±20/±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS3669S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
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| FDMS3669S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Mounting: SMD Case: Power56 Drain-source voltage: 30/30V Drain current: 24/60A On-state resistance: 14.5/7.1mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.2/2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 24/34nC Kind of channel: enhancement Gate-source voltage: ±20/±12V |
Produkt ist nicht verfügbar |