FDMS3669S ON Semiconductor
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.02 EUR |
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Technische Details FDMS3669S ON Semiconductor
Description: MOSFET 2N-CH 30V 13A/18A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 18A, Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS3669S nach Preis ab 0.97 EUR bis 2.94 EUR
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FDMS3669S | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 642 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3669S | Hersteller : onsemi / Fairchild |
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench |
auf Bestellung 46776 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3669S | Hersteller : ONSEMI |
Description: ONSEMI - FDMS3669S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1778 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
Produkt ist nicht verfügbar |
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FDMS3669S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
Produkt ist nicht verfügbar |
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| FDMS3669S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 24/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 14.5/7.1mΩ Mounting: SMD Gate charge: 24/34nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS3669S | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
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| FDMS3669S | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 24/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 14.5/7.1mΩ Mounting: SMD Gate charge: 24/34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |