Technische Details FDMS3669S ON Semiconductor
Description: MOSFET 2N-CH 30V 13A 8PQFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, 2060pF @ 15V, Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 34nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, 2.5V @ 1mA, Supplier Device Package: 8-PQFN (5x6).
Weitere Produktangebote FDMS3669S nach Preis ab 1.13 EUR bis 4.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDMS3669S | ON Semiconductor |
 Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS3669S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
FDMS3669S | ON Semiconductor |
Trans MOSFET N-CH 30V 13A/18A 8-Pin PQFN EP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FDMS3669S | Fairchild Semiconductor |
Description: MOSFET 2N-CH 30V 13A 8PQFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, 2060pF @ 15V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 34nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA, 2.5V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 1778 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMS3669S | onsemi / Fairchild |
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench |
auf Bestellung 45691 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMS3669S | onsemi |
Description: MOSFET 2N-CH 30V 13A/18A POWER56 Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 6169 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FDMS3669S | onsemi |
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench |
auf Bestellung 42680 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FDMS3669S | ONSEMI |
Description: ONSEMI - FDMS3669S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1778 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1778 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMS3669S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.2 EUR |
| FDMS3669S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R
Trans MOSFET N-CH 30V 13A/18A 8-Pin Power 56 EP T/R
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.25 EUR |
| 6000+ | 1.2 EUR |
| 9000+ | 1.13 EUR |
| FDMS3669S |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 13A/18A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 30V 13A/18A 8-Pin PQFN EP T/R
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.29 EUR |
| FDMS3669S |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET 2N-CH 30V 13A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, 2060pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA, 2.5V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 30V 13A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V, 2060pF @ 15V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA, 2.5V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
auf Bestellung 1778 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 289+ | 1.92 EUR |
| FDMS3669S |
|
Hersteller: onsemi / Fairchild
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
auf Bestellung 45691 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 2.93 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.5 EUR |
| 3000+ | 1.38 EUR |
| FDMS3669S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 6169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.77 EUR |
| 10+ | 3 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.69 EUR |
| FDMS3669S |
|
Hersteller: onsemi
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
auf Bestellung 42680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.99 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.54 EUR |
| FDMS3669S |
|
Hersteller: ONSEMI
Description: ONSEMI - FDMS3669S - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDMS3669S - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 1778 Stücke:
Lieferzeit 14-21 Tag (e)