FGY75T120SQDN
Produktcode: 198781
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote FGY75T120SQDN nach Preis ab 11.63 EUR bis 22.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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FGY75T120SQDN | onsemi |
IGBTs IGBT 1200V 75A UFS |
auf Bestellung 323 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY75T120SQDN | onsemi |
Description: IGBT FS 1200V 150A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 64ns/332ns Switching Energy: 6.25mJ (on), 1.96mJ (off) Test Condition: 600V, 75A, 10Ohm, 15V Gate Charge: 399 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 790 W |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.2kV Power dissipation: 395W Gate charge: 399nC Pulsed collector current: 300A Type of transistor: IGBT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FGY75T120SQDN |
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Hersteller: onsemi
IGBTs IGBT 1200V 75A UFS
IGBTs IGBT 1200V 75A UFS
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21 EUR |
| 10+ | 12.59 EUR |
| 120+ | 11.75 EUR |
| FGY75T120SQDN |
|
Hersteller: onsemi
Description: IGBT FS 1200V 150A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 64ns/332ns
Switching Energy: 6.25mJ (on), 1.96mJ (off)
Test Condition: 600V, 75A, 10Ohm, 15V
Gate Charge: 399 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 790 W
Description: IGBT FS 1200V 150A TO-247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 64ns/332ns
Switching Energy: 6.25mJ (on), 1.96mJ (off)
Test Condition: 600V, 75A, 10Ohm, 15V
Gate Charge: 399 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 790 W
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.73 EUR |
| 30+ | 13.63 EUR |
| 120+ | 11.63 EUR |
| FGY75T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)