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NVTFS4C06NTWG

NVTFS4C06NTWG onsemi

nvtfs4c06n-d.pdf
Hersteller: onsemi
MOSFETs NFET U8FL 30V 71A 4.2MOHM
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Lieferzeit 10-14 Tag (e)
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1+4.14 EUR
10+2.78 EUR
100+1.87 EUR
500+1.52 EUR
1000+1.36 EUR
2500+1.23 EUR
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Technische Details NVTFS4C06NTWG onsemi

Description: MOSFET N-CH 30V 21A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 37W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote NVTFS4C06NTWG

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NVTFS4C06NTWG NVTFS4C06NTWG onsemi nvtfs4c06n-d.pdf Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS4C06NTWG NVTFS4C06NTWG onsemi nvtfs4c06n-d.pdf Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS4C06NTWG ONSEMI nvtfs4c06n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS4C06NTWG nvtfs4c06n-d.pdf
NVTFS4C06NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS4C06NTWG nvtfs4c06n-d.pdf
NVTFS4C06NTWG
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS4C06NTWG nvtfs4c06n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH