NTMT185N60S5H onsemi
Hersteller: onsemi
Description: SUPERFET5 FAST 185MOHM PQFN88
Part Status: Not For New Designs
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Power Dissipation (Max): 116W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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Technische Details NTMT185N60S5H onsemi
Description: SUPERFET5 FAST 185MOHM PQFN88, Part Status: Not For New Designs, Supplier Device Package: 4-TDFN (8x8), Vgs(th) (Max) @ Id: 4.3V @ 1.4mA, Power Dissipation (Max): 116W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10.
Weitere Produktangebote NTMT185N60S5H nach Preis ab 8.24 EUR bis 8.24 EUR
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NTMT185N60S5H | onsemi |
Description: SUPERFET5 FAST 185MOHM PQFN88 Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-TDFN (8x8) Vgs(th) (Max) @ Id: 4.3V @ 1.4mA Power Dissipation (Max): 116W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMT185N60S5H |
|
Hersteller: onsemi
Description: SUPERFET5 FAST 185MOHM PQFN88
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Power Dissipation (Max): 116W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: SUPERFET5 FAST 185MOHM PQFN88
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-TDFN (8x8)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Power Dissipation (Max): 116W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.24 EUR |