NTMT185N60S5H onsemi
Hersteller: onsemiDescription: SUPERFET5 FAST 185MOHM PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
Power Dissipation (Max): 116W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 3.45 EUR |
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Technische Details NTMT185N60S5H onsemi
Description: SUPERFET5 FAST 185MOHM PQFN88, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V, Power Dissipation (Max): 116W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 1.4mA, Supplier Device Package: 4-TDFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Weitere Produktangebote NTMT185N60S5H nach Preis ab 9.15 EUR bis 9.15 EUR
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NTMT185N60S5H | Hersteller : onsemi |
Description: SUPERFET5 FAST 185MOHM PQFN88 Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V Power Dissipation (Max): 116W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1.4mA Supplier Device Package: 4-TDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMT185N60S5H | Hersteller : ON Semiconductor |
Power MOSFET, N-Channel |
Produkt ist nicht verfügbar |
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| NTMT185N60S5H | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 53A Power dissipation: 116W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NTMT185N60S5H | Hersteller : onsemi |
MOSFETs SUPERFET5 FAST 185MOHM PQFN88 |
Produkt ist nicht verfügbar |
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| NTMT185N60S5H | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 53A; 116W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 53A Power dissipation: 116W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |