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FQPF2N80YDTU

FQPF2N80YDTU Fairchild Semiconductor

FAIRS45220-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.5A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
263+1.92 EUR
Mindestbestellmenge: 263
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQPF2N80YDTU Fairchild Semiconductor

Description: MOSFET N-CH 800V 1.5A TO220F-3, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.

Weitere Produktangebote FQPF2N80YDTU nach Preis ab 1.58 EUR bis 5 EUR

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FQPF2N80YDTU FQPF2N80YDTU Hersteller : onsemi / Fairchild FQPF2N80YDTU_D-2313683.pdf MOSFET QF 800V 6.3OHM TO220F
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.91 EUR
10+3.52 EUR
25+3.31 EUR
100+2.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQPF2N80YDTU FQPF2N80YDTU Hersteller : onsemi fqpf2n80ydtu-d.pdf Description: MOSFET N-CH 800V 1.5A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 2144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
50+2.49 EUR
100+2.24 EUR
500+1.82 EUR
1000+1.68 EUR
2000+1.58 EUR
Mindestbestellmenge: 4
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FQPF2N80YDTU FQPF2N80YDTU Hersteller : ON Semiconductor 3671561010775084fqpf2n80ydtu-d.pdf Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) TO-220F Tube
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