FQPF27N25 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.39 EUR |
| 50+ | 3.01 EUR |
| 100+ | 2.93 EUR |
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Technische Details FQPF27N25 onsemi
Description: MOSFET N-CH 250V 14A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V.
Weitere Produktangebote FQPF27N25 nach Preis ab 2.64 EUR bis 5.58 EUR
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FQPF27N25 | Hersteller : onsemi / Fairchild |
MOSFETs 250V N-Channel QFET |
auf Bestellung 845 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF27N25 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 14A 3-Pin(3+Tab) TO-220FP Tube |
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FQPF27N25 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 250V 14A 3-Pin(3+Tab) TO-220FP Tube |
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FQPF27N25 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.9A Pulsed drain current: 56A Power dissipation: 55W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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FQPF27N25 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 8.9A; Idm: 56A; 55W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.9A Pulsed drain current: 56A Power dissipation: 55W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |