FDWS86369-F085 ON Semiconductor

Description: MOSFET N-CH 80V 65A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 65A, 10V, Power Dissipation (Max): 107W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power56, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.