auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 176+ | 3.12 EUR |
| 500+ | 2.85 EUR |
Produktrezensionen
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Technische Details FQPF22N30 FAIRCHILD
Description: MOSFET N-CH 300V 12A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 6A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V.
Weitere Produktangebote FQPF22N30
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQPF22N30 |
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auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQPF22N30 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 300V 12A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF22N30 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQPF22N30 | Hersteller : onsemi |
Description: MOSFET N-CH 300V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 6A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF22N30 | Hersteller : onsemi / Fairchild |
MOSFET 300V N-Channel QFET |
Produkt ist nicht verfügbar |
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FQPF22N30 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 7.6A; Idm: 48A; 56W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 56W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |