NJW21193G ONSEMI
Hersteller: ONSEMICategory: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Frequency: 4MHz
Collector-emitter voltage: 250V
Current gain: 20...70
Collector current: 16A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO3P
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.88 EUR |
| 17+ | 4.3 EUR |
| 20+ | 3.73 EUR |
| 21+ | 3.53 EUR |
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Technische Details NJW21193G ONSEMI
Description: TRANS PNP 250V 16A TO-3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V, Frequency - Transition: 4MHz, Supplier Device Package: TO-3P-3L, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 200 W.
Weitere Produktangebote NJW21193G nach Preis ab 3.26 EUR bis 8.25 EUR
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NJW21193G | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P Frequency: 4MHz Collector-emitter voltage: 250V Current gain: 20...70 Collector current: 16A Type of transistor: PNP Application: automotive industry Power dissipation: 200W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO3P |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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NJW21193G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 250V 16A 200000mW 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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NJW21193G | Hersteller : EVVO |
Description: TRANS PNP 250V 16A TO-3PB Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-3PB Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 200 W |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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NJW21193G | Hersteller : onsemi |
Bipolar Transistors - BJT 200W PNP |
auf Bestellung 634 Stücke: Lieferzeit 10-14 Tag (e) |
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NJW21193G | Hersteller : onsemi |
Description: TRANS PNP 250V 16A TO-3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V Frequency - Transition: 4MHz Supplier Device Package: TO-3P-3L Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 200 W |
auf Bestellung 107 Stücke: Lieferzeit 10-14 Tag (e) |
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NJW21193G Produktcode: 102277
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NJW21193G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 250V 16A 200000mW 3-Pin(3+Tab) TO-3P Tube |
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NJW21193G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 250V 16A 200000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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NJW21193G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 250V 16A 200000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |