| Anzahl | Privatkunde |
|---|---|
| 1068+ | 0.63 EUR |
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Technische Details FDS6930A ON Semiconductor
Description: MOSFET 2N-CH 30V 5.5A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote FDS6930A nach Preis ab 0.63 EUR bis 0.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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FDS6930A | ON Semiconductor |
 Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS6930A | Fairchild Semiconductor |
Description: MOSFET 2N-CH 30V 5.5A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 4940 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDS6930A |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 5.5A 8-Pin SOIC T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1068+ | 0.63 EUR |
| FDS6930A |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 595+ | 0.9 EUR |