FDS6930A Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET 2N-CH 30V 5.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5813 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 873+ | 0.55 EUR |
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Technische Details FDS6930A Fairchild Semiconductor
Description: MOSFET 2N-CH 30V 5.5A 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V, Rds On (Max) @ Id, Vgs: 40mOhm @ 5.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
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FDS6930A | Hersteller : ONSEMI |
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