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NVMFS6H836NWFT1G onsemi


nvmfs6h836n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
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Technische Details NVMFS6H836NWFT1G onsemi

Description: MOSFET N-CH 80V 15A/74A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, Power Dissipation (Max): 3.7W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 95µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V, Qualification: AEC-Q101.

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NVMFS6H836NWFT1G NVMFS6H836NWFT1G onsemi nvmfs6h836n-d.pdf Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H836NWFT1G NVMFS6H836NWFT1G onsemi nvmfs6h836n-d.pdf MOSFETs T8 80V SO8FL
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NVMFS6H836NWFT1G ONSEMI nvmfs6h836n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 44W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 432A
Gate charge: 25nC
Produkt ist nicht verfügbar
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NVMFS6H836NWFT1G nvmfs6h836n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H836NWFT1G nvmfs6h836n-d.pdf
Hersteller: onsemi
MOSFETs T8 80V SO8FL
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NVMFS6H836NWFT1G nvmfs6h836n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; Idm: 432A; 44W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 44W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 432A
Gate charge: 25nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH