
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 8.92 EUR |
10+ | 5 EUR |
100+ | 4.7 EUR |
500+ | 4.49 EUR |
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Technische Details FCPF220N80 onsemi / Fairchild
Description: MOSFET N-CH 800V 23A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.3mA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V.
Weitere Produktangebote FCPF220N80 nach Preis ab 4.31 EUR bis 9.08 EUR
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FCPF220N80 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.3mA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V |
auf Bestellung 18797 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF220N80 | Hersteller : ON Semiconductor |
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auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) |
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FCPF220N80 | Hersteller : ON Semiconductor |
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FCPF220N80 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCPF220N80 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCPF220N80 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 23A Pulsed drain current: 57A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCPF220N80 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 23A Pulsed drain current: 57A Power dissipation: 44W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |