| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 5.87 EUR |
| 100+ | 5.59 EUR |
| 500+ | 5.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCPF220N80 onsemi / Fairchild
Description: MOSFET N-CH 800V 23A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4.5V @ 2.3mA, Power Dissipation (Max): 44W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote FCPF220N80 nach Preis ab 5.13 EUR bis 13.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FCPF220N80 | onsemi |
 Description: MOSFET N-CH 800V 23A TO220FInput Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4.5V @ 2.3mA Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 18797 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF220N80 | onsemi |
MOSFETs N-Channel SuperFET II MOSFET |
auf Bestellung 715 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF220N80 | ON Semiconductor |
|
auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCPF220N80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 23A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 2.3mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 23A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 2.3mA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 18797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.81 EUR |
| 50+ | 5.93 EUR |
| 100+ | 5.69 EUR |
| 500+ | 5.16 EUR |
| 1000+ | 5.13 EUR |
| FCPF220N80 |
|
Hersteller: onsemi
MOSFETs N-Channel SuperFET II MOSFET
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 715 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.83 EUR |
| 10+ | 8.4 EUR |
| 100+ | 7.12 EUR |
| 500+ | 6.18 EUR |
| 1000+ | 6.15 EUR |
| FCPF220N80 |
|
Hersteller: ON Semiconductor
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)