FQD8P10TM-F085 ON Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD8P10TM-F085 ON Semiconductor
Description: MOSFET P-CH 100V 6.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FQD8P10TM-F085 nach Preis ab 1.38 EUR bis 3.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FQD8P10TM-F085 | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
FQD8P10TM-F085 | Hersteller : onsemi |
Description: MOSFET P-CH 100V 6.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 61 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
 |
FQD8P10TM-F085 | Hersteller : onsemi / Fairchild |
MOSFET 100V P-Channel QFET |
auf Bestellung 38 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||
 |
FQD8P10TM_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET P-CH 100V 6.6A DPAK-3 |
auf Bestellung 1308 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||
|
|
FQD8P10TM_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET P-CH 100V 6.6A DPAK-3 |
auf Bestellung 1308 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||
|
|
FQD8P10TM-F085 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FQD8P10TM-F085 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
FQD8P10TM-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FQD8P10TM-F085 - Leistungs-MOSFET, p-Kanal, 100 V, 6.6 A, 0.41 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 44W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.41ohm |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FQD8P10TM-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FQD8P10TM-F085 - Leistungs-MOSFET, p-Kanal, 100 V, 6.6 A, 0.41 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 44W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.41ohm |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
FQD8P10TM-F085 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
FQD8P10TM-F085 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FQD8P10TM_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET P-CH 100V 6.6A DPAK-3 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FQD8P10TM-F085 | Hersteller : onsemi |
Description: MOSFET P-CH 100V 6.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
FQD8P10TM-F085 | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |