ESDM2032MX4T5G ON Semiconductor
Hersteller: ON Semiconductor3.3 V Bidirectional ESD and Surge Protection Diode 3.3 V Bidirectional ESD Protection
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Technische Details ESDM2032MX4T5G ON Semiconductor
Description: TVS DIODE 3.3VWM 5.2VC 2DFN, Packaging: Tape & Reel (TR), Package / Case: 0201 (0603 Metric), Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 18pF @ 1MHz, Current - Peak Pulse (10/1000µs): 16A, Voltage - Reverse Standoff (Typ): 3.3V (Max), Supplier Device Package: 2-DFN (0.6x0.3), Bidirectional Channels: 1, Voltage - Breakdown (Min): 3.7V, Voltage - Clamping (Max) @ Ipp: 5.2V, Power Line Protection: No, Part Status: Active.
Weitere Produktangebote ESDM2032MX4T5G
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ESDM2032MX4T5G | Hersteller : onsemi |
Description: TVS DIODE 3.3VWM 5.2VC 2DFN Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 18pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-DFN (0.6x0.3) Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 5.2V Power Line Protection: No Part Status: Active |
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ESDM2032MX4T5G | Hersteller : onsemi |
Description: TVS DIODE 3.3VWM 5.2VC 2DFN Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 18pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-DFN (0.6x0.3) Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 5.2V Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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ESDM2032MX4T5G | Hersteller : onsemi |
ESD Protection Diodes / TVS Diodes 3.3V MID CAP PROTECTION |
Produkt ist nicht verfügbar |