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NXH75M65L4Q1PTG onsemi


nxh75m65l4q1sg-d.pdf
Hersteller: onsemi
Description: IGBT MODULE 650V 59A 86W 53-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: 53-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 86 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+116.43 EUR
21+88.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NXH75M65L4Q1PTG onsemi

Description: IGBT MODULE 650V 59A 86W 53-PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: 53-PIM/Q2PACK (93x47), IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 59 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 86 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 5.665 nF @ 30 V.

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NXH75M65L4Q1PTG onsemi nxh75m65l4q1sg-d.pdf IGBT Modules 6KW H6.5 75A Q1PACK PRESS-FIT PIN WITH TCP7000
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NXH75M65L4Q1PTG ONSEMI nxh75m65l4q1sg-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 59A
Case: PIM27
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 176A
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NXH75M65L4Q1PTG nxh75m65l4q1sg-d.pdf
Hersteller: onsemi
IGBT Modules 6KW H6.5 75A Q1PACK PRESS-FIT PIN WITH TCP7000
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXH75M65L4Q1PTG nxh75m65l4q1sg-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 59A
Case: PIM27
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 176A
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH