| Anzahl | Preis |
|---|---|
| 1+ | 6.07 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.06 EUR |
| 250+ | 3.04 EUR |
| 500+ | 2.64 EUR |
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Technische Details FFSP1065B-F085 onsemi
Description: DIODE SIL CARB 650V 10A TO220-2, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 421pF @ 1V, 100kHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote FFSP1065B-F085 nach Preis ab 3.07 EUR bis 6.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FFSP1065B-F085 | onsemi |
 Description: DIODE SIL CARB 650V 10A TO220-2Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 421pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 772 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| FFSP1065B-F085 | ON Semiconductor |
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auf Bestellung 1588 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FFSP1065B-F085 |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 10A TO220-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.6 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.07 EUR |
| FFSP1065B-F085 |
|
Hersteller: ON Semiconductor
auf Bestellung 1588 Stücke:
Lieferzeit 21-28 Tag (e)