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FSQ0170RNA | ONSEMI |
 Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; 700mA; 700V; 100kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.7A Output voltage: 700V Frequency: 0.1MHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 11Ω Duty cycle factor: 55...65% Power: 13W Application: SMPS Operating voltage: 8...19V DC |
Produkt ist nicht verfügbar |
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| NDUL03N150CG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 50W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 10.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| MBRB20100CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.95V Kind of package: reel; tape Max. forward impulse current: 150A Max. load current: 20A |
Produkt ist nicht verfügbar |
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DTC123JET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| DTC123EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 8...15 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
Produkt ist nicht verfügbar |
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| DTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 8...15 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
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| DTC123JM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
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DTC123TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2/0.3W Case: SOT416 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ |
Produkt ist nicht verfügbar |
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MC14021BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Operating temperature: -55...125°C Mounting: SMD Quiescent current: 600µA Supply voltage: 3...18V DC Case: SO16 Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS Number of channels: 1 Family: HEF4000B |
auf Bestellung 485 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14014BDG | ONSEMI |
Category: Shift registers Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V DC Case: SOIC16 Kind of integrated circuit: 8bit; shift register Type of integrated circuit: digital Kind of package: tube Technology: CMOS Number of channels: 1 Family: HEF4000B |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1393BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V Type of integrated circuit: driver Output current: -1...0.5A Case: SO8 Mounting: SMD Topology: MOSFET half-bridge Pulse fall time: 20ns Operating temperature: -40...125°C Impulse rise time: 40ns Supply voltage: 8...17.5V DC Voltage class: 600V |
Produkt ist nicht verfügbar |
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NCP1392BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V Type of integrated circuit: driver Output current: -1...0.5A Case: SO8 Mounting: SMD Topology: MOSFET half-bridge Pulse fall time: 20ns Operating temperature: -40...125°C Impulse rise time: 40ns Supply voltage: 8...17.5V DC Voltage class: 600V |
Produkt ist nicht verfügbar |
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NCP1395BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Output current: 1A Frequency: 48.5kHz...1.11MHz Number of channels: 1 Case: SO16 Mounting: SMD Topology: push-pull; resonant LLC Operating voltage: 9.3...20V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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NCP1396BDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Output current: 0.5...1A Frequency: 58.2...575kHz Number of channels: 1 Case: SO16 Mounting: SMD Topology: push-pull; resonant LLC Operating voltage: 9.5...20V DC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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| FDP027N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 223A Pulsed drain current: 892A Power dissipation: 246W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 137nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FCP22N60N | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SMF12CT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD Mounting: SMD Type of diode: TVS array Leakage current: 0.1µA Max. forward impulse current: 6A Number of channels: 5 Max. off-state voltage: 12V Breakdown voltage: 13.3...15V Peak pulse power dissipation: 0.1kW Semiconductor structure: common anode Version: ESD Case: SC88 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NTD18N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 55W Case: DPAK Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDC6561AN | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 3.2nC On-state resistance: 152mΩ Power dissipation: 0.96W Drain current: 2.5A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 847 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC2510 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC2510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1N5356BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 0.5uA Kind of package: reel; tape Case: CASE017AA Semiconductor structure: single diode Mounting: THT Type of diode: Zener Tolerance: ±5% Leakage current: 0.5µA Power dissipation: 5W Zener voltage: 19V Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
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MUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 5745 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5331DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5333DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...200 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MUN5332DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 15...30 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MUN5330DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MUN5334DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 80...150 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MUN5335DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar Type of transistor: NPN / PNP Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MUN5338DW1T3G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7/47kΩ Base-emitter resistor: 10/47kΩ Quantity in set/package: 10000pcs. |
Produkt ist nicht verfügbar |
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SMUN5330DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Application: automotive industry Base-emitter resistor: 1kΩ |
Produkt ist nicht verfügbar |
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SMUN5335DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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| NSVMUN5331DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMUN5332DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 4.7kΩ Current gain: 15...30 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMUN5333DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...200 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVMUN5334DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...150 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114YDP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114TDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114EDP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114EF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114EPDP6T5G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114EPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114TDP6T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 160...350 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114TPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114YDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114YF3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114YPDP6T5G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 80...140 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC114YPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC114EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC114YDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC114YPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
NCV21872DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 270kHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: Micro8 Operating temperature: -40...125°C Slew rate: 0.1V/μs Integrated circuit features: rail-to-rail; zero-drift Input offset voltage: 0.045mV Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| NCV333ASN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5 Type of integrated circuit: operational amplifier Bandwidth: 350kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 0.15V/μs Integrated circuit features: zero-drift Input offset voltage: 30µV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 400pA |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| NVMFWS1D5N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 83nC On-state resistance: 1.43mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 194W Drain current: 253A Pulsed drain current: 1071A Case: DFNW5 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFWS1D5N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.43mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 194W Drain current: 253A Pulsed drain current: 1071A Case: DFNW5 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFWS1D9N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 63nC On-state resistance: 1.9mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 164W Drain current: 201A Pulsed drain current: 866A Case: DFNW5 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFWS2D1N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 53nC On-state resistance: 2.1mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 148W Drain current: 181A Pulsed drain current: 761A Case: DFNW5 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFWS2D5N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 45nC On-state resistance: 2.55mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 133W Drain current: 156A Pulsed drain current: 640A Case: DFNW5 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFWS4D5N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FSQ0170RNA |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700mA; 700V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.7A
Output voltage: 700V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 55...65%
Power: 13W
Application: SMPS
Operating voltage: 8...19V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700mA; 700V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.7A
Output voltage: 700V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 55...65%
Power: 13W
Application: SMPS
Operating voltage: 8...19V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDUL03N150CG |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 50W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 50W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRB20100CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.95V
Kind of package: reel; tape
Max. forward impulse current: 150A
Max. load current: 20A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123JET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 8...15
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 8...15
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123JM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123TET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14021BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Quiescent current: 600µA
Supply voltage: 3...18V DC
Case: SO16
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Quiescent current: 600µA
Supply voltage: 3...18V DC
Case: SO16
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 187+ | 0.38 EUR |
| 208+ | 0.34 EUR |
| 239+ | 0.3 EUR |
| 258+ | 0.28 EUR |
| MC14014BDG |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Family: HEF4000B
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Family: HEF4000B
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 202+ | 0.35 EUR |
| 223+ | 0.32 EUR |
| 236+ | 0.3 EUR |
| 249+ | 0.29 EUR |
| 257+ | 0.28 EUR |
| 288+ | 0.27 EUR |
| NCP1393BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1392BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1395BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 1A
Frequency: 48.5kHz...1.11MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.3...20V DC
Operating temperature: -40...125°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 1A
Frequency: 48.5kHz...1.11MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.3...20V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1396BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 0.5...1A
Frequency: 58.2...575kHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.5...20V DC
Operating temperature: -40...125°C
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 0.5...1A
Frequency: 58.2...575kHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.5...20V DC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP027N08B-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP22N60N |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMF12CT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 6A
Number of channels: 5
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15V
Peak pulse power dissipation: 0.1kW
Semiconductor structure: common anode
Version: ESD
Case: SC88
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 6A
Number of channels: 5
Max. off-state voltage: 12V
Breakdown voltage: 13.3...15V
Peak pulse power dissipation: 0.1kW
Semiconductor structure: common anode
Version: ESD
Case: SC88
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD18N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC6561AN |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 847 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 100+ | 0.72 EUR |
| 145+ | 0.49 EUR |
| 169+ | 0.42 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| GBPC2510 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC2510W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5356BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Tolerance: ±5%
Leakage current: 0.5µA
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 0.5uA
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Tolerance: ±5%
Leakage current: 0.5µA
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5335DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 5745 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 459+ | 0.16 EUR |
| 643+ | 0.11 EUR |
| 739+ | 0.097 EUR |
| 1005+ | 0.071 EUR |
| 1134+ | 0.063 EUR |
| 1500+ | 0.059 EUR |
| 3000+ | 0.052 EUR |
| MUN5331DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 236+ | 0.3 EUR |
| 418+ | 0.17 EUR |
| 685+ | 0.1 EUR |
| 1119+ | 0.064 EUR |
| 3000+ | 0.056 EUR |
| MUN5333DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5332DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5330DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5334DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5335DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar
Type of transistor: NPN / PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5338DW1T3G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7/47kΩ
Base-emitter resistor: 10/47kΩ
Quantity in set/package: 10000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7/47kΩ
Base-emitter resistor: 10/47kΩ
Quantity in set/package: 10000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5330DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Application: automotive industry
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5335DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5331DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5332DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Current gain: 15...30
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5333DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...200
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...200
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5334DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114YDP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114TDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114EDP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114EF3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114EPDP6T5G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114EPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114TDP6T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114TPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114YDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114YF3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114YPDP6T5G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC114YPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBC114EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBC114YDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBC114YPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV21872DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 96+ | 0.75 EUR |
| 109+ | 0.66 EUR |
| 133+ | 0.54 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.46 EUR |
| NCV333ASN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 132+ | 0.54 EUR |
| 146+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| NVMFWS1D5N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 83nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 83nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFWS1D5N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 253A; Idm: 1071A; 194W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.43mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 194W
Drain current: 253A
Pulsed drain current: 1071A
Case: DFNW5
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS1D9N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
On-state resistance: 1.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 164W
Drain current: 201A
Pulsed drain current: 866A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 201A; Idm: 866A; 164W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
On-state resistance: 1.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 164W
Drain current: 201A
Pulsed drain current: 866A
Case: DFNW5
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS2D1N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53nC
On-state resistance: 2.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 148W
Drain current: 181A
Pulsed drain current: 761A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 53nC
On-state resistance: 2.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 148W
Drain current: 181A
Pulsed drain current: 761A
Case: DFNW5
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NVMFWS2D5N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 45nC
On-state resistance: 2.55mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 133W
Drain current: 156A
Pulsed drain current: 640A
Case: DFNW5
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 156A; Idm: 640A; 133W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 45nC
On-state resistance: 2.55mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 133W
Drain current: 156A
Pulsed drain current: 640A
Case: DFNW5
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS4D5N08XT1G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH