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N24C02UDTG ONSEMI N24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
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N24C02UVTG ONSEMI N24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C02TDI-GT3A CAT24C02TDI-GT3A ONSEMI CAT24C01-D.PDF Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
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CAV24C02WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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CAV24C02YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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NCP3063BDR2G NCP3063BDR2G ONSEMI NCP3063.pdf description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 5...40V DC
Frequency: 110...190kHz
auf Bestellung 1944 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.59 EUR
64+1.34 EUR
71+1.21 EUR
80+1.07 EUR
84+1.02 EUR
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MBRB2545CTT4G MBRB2545CTT4G ONSEMI MBRB2545CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 30A
auf Bestellung 227 Stücke:
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33+2.61 EUR
35+2.46 EUR
45+1.93 EUR
51+1.69 EUR
57+1.5 EUR
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MUR1540G MUR1540G ONSEMI MUR15xx.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
auf Bestellung 140 Stücke:
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71+1.21 EUR
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MBRS1540T3G MBRS1540T3G ONSEMI MBRS1540T3G-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 3A
Kind of package: reel; tape
auf Bestellung 520 Stücke:
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93+0.92 EUR
176+0.49 EUR
207+0.42 EUR
230+0.37 EUR
256+0.33 EUR
286+0.3 EUR
500+0.29 EUR
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FQPF27P06 FQPF27P06 ONSEMI FQPF27P06.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 37 Stücke:
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25+3.44 EUR
37+2.3 EUR
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FQB27P06TM FQB27P06TM ONSEMI FQB27P06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 550 Stücke:
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24+3.59 EUR
30+2.88 EUR
34+2.55 EUR
40+2.17 EUR
50+1.9 EUR
100+1.7 EUR
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MJ15001GMJ15001G
MJ15001GMJ15001G
 MJ15001G ONSEMI mj15001-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Produkt ist nicht verfügbar
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LMV324DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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LMV324DTBR2G LMV324DTBR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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MC14512BDR2G MC14512BDR2G ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.7 EUR
173+0.49 EUR
193+0.44 EUR
221+0.38 EUR
250+0.37 EUR
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FCPF16N60 FCPF16N60 ONSEMI FCP16N60-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
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CAT24C256YI-GT3 CAT24C256YI-GT3 ONSEMI CAT24C256-D.PDF Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Memory: 256kb EEPROM
Memory organisation: 32kx8bit
Interface: I2C
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
auf Bestellung 46 Stücke:
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46+1.86 EUR
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NV24C256MUW3VTBG ONSEMI NV24C256MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV24C256WE-GT3 ONSEMI CAV24C256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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CAV24C256YE-GT3 ONSEMI CAV24C256-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NCP1246BLD065R2G ONSEMI ncp1246-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Operating voltage: 8.9...26.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Case: SO7
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Topology: flyback
Output current: 500...800mA
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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MC74HC165ADR2G-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
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MC74HC165ADTR2G-Q MC74HC165ADTR2G-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
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MC74HC165AMN2TWG ONSEMI MC74HC165A-D.PDF Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: QFN16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
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MC74HC165AMN2TWG-Q ONSEMI mc74hc165a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of output: complementary
Operating temperature: -55...125°C
Number of inputs: 9
Case: QFN16
Kind of integrated circuit: parallel in; shift register
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FDS3590 FDS3590 ONSEMI fds3590-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
Mounting: SMD
On-state resistance: 86mΩ
Power dissipation: 2.5W
Drain current: 6.5A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Polarisation: unipolar
auf Bestellung 427 Stücke:
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48+1.81 EUR
69+1.24 EUR
84+1.01 EUR
113+0.75 EUR
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KSC2383YTA KSC2383YTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.75 EUR
124+0.69 EUR
136+0.63 EUR
218+0.39 EUR
280+0.31 EUR
2000+0.2 EUR
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KSC2383OTA KSC2383OTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1137 Stücke:
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114+0.75 EUR
143+0.6 EUR
166+0.51 EUR
242+0.36 EUR
285+0.3 EUR
500+0.23 EUR
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FDMS86101 FDMS86101 ONSEMI FDMS86101.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86101A ONSEMI fdms86101a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86101DC FDMS86101DC ONSEMI fdms86101dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14021BDR2G MC14021BDR2G ONSEMI mc14014b-d.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 600µA
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
auf Bestellung 9173 Stücke:
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132+0.64 EUR
180+0.48 EUR
215+0.39 EUR
258+0.33 EUR
2500+0.3 EUR
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MC14049BDG MC14049BDG ONSEMI mc14049b-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
149+0.57 EUR
165+0.51 EUR
188+0.45 EUR
193+0.44 EUR
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MC14082BDG MC14082BDG ONSEMI MC14082BDG.PDF Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Family: HEF4000B
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of gate: AND
auf Bestellung 413 Stücke:
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209+0.4 EUR
295+0.29 EUR
343+0.25 EUR
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MC14025BDG MC14025BDG ONSEMI MC14001B-D.pdf description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of gate: NOR
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MC14013BDTR2G MC14013BDTR2G ONSEMI MC14013B-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Case: TSSOP14
Mounting: SMD
Number of channels: 2
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Technology: CMOS
Number of inputs: 4
Produkt ist nicht verfügbar
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MC74ACT74DG MC74ACT74DG ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
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MC74ACT74DTR2G MC74ACT74DTR2G ONSEMI MC74AC74-D.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
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ES2D ES2D ONSEMI ES2(A-J)%20N0160%20REV.D.pdf ES2D-D.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf 1778296729689285.pdf 1756711237167803.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
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252+0.33 EUR
334+0.25 EUR
365+0.24 EUR
397+0.21 EUR
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ES2DAF ONSEMI ES2DAF-D.PDF es2daf-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74HC164ADR2G-Q MC74HC164ADR2G-Q ONSEMI mc74hc164a-d.pdf Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Number of inputs: 2
Produkt ist nicht verfügbar
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MC74HC164ADTR2G-Q MC74HC164ADTR2G-Q ONSEMI mc74hc164a-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Produkt ist nicht verfügbar
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MC74HC164BDR2G MC74HC164BDR2G ONSEMI mc74hc164b-d.pdf Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Produkt ist nicht verfügbar
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N93C66BT3ETAG ONSEMI N93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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CAT93C66VI-GT3 ONSEMI CAT93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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CAV93C66VE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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CAV93C66YE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FQP9N90C FQP9N90C ONSEMI FQP9N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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23+3.71 EUR
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FQPF9N90CT FQPF9N90CT ONSEMI FQPF9N90C-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 977 Stücke:
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14+6.32 EUR
19+4.52 EUR
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TL331SN4T3G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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TL331VSN4T3G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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TL331SN4T1G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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MBR0530 MBR0530 ONSEMI MBR0530.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BD13810STU BD13810STU ONSEMI BD136_138_140.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
auf Bestellung 1139 Stücke:
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151+0.57 EUR
167+0.51 EUR
188+0.45 EUR
480+0.4 EUR
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BD138G ONSEMI BD136G-D.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Produkt ist nicht verfügbar
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MOC3163M MOC3163M ONSEMI MOC3163M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Trigger current: 5mA
Manufacturer series: MOC3163M
auf Bestellung 1058 Stücke:
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82+1.04 EUR
103+0.82 EUR
111+0.77 EUR
117+0.74 EUR
122+0.7 EUR
500+0.62 EUR
750+0.6 EUR
1000+0.58 EUR
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MB2S MB2S ONSEMI MB6S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
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52+1.63 EUR
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LM301ADR2G ONSEMI lm301a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC14555BDG MC14555BDG ONSEMI MC14555B-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Number of channels: 2
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120+0.71 EUR
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FSB50450US ONSEMI fsb50450us-d.pdf Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Mounting: SMD
Produkt ist nicht verfügbar
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N24C02UDTG N24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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N24C02UVTG N24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.6...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAT24C02TDI-GT3A CAT24C01-D.PDF
CAT24C02TDI-GT3A
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOT23-5
Produkt ist nicht verfügbar
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CAV24C02WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAV24C02YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP3063BDR2G description NCP3063.pdf
NCP3063BDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 5...40V DC
Frequency: 110...190kHz
auf Bestellung 1944 Stücke:
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AnzahlPrivatkunde
54+1.59 EUR
64+1.34 EUR
71+1.21 EUR
80+1.07 EUR
84+1.02 EUR
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MBRB2545CTT4G MBRB2545CTG.PDF
MBRB2545CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 30A
auf Bestellung 227 Stücke:
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33+2.61 EUR
35+2.46 EUR
45+1.93 EUR
51+1.69 EUR
57+1.5 EUR
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MUR1540G MUR15xx.PDF
MUR1540G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
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71+1.21 EUR
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MBRS1540T3G MBRS1540T3G-DTE.PDF
MBRS1540T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 3A
Kind of package: reel; tape
auf Bestellung 520 Stücke:
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AnzahlPrivatkunde
93+0.92 EUR
176+0.49 EUR
207+0.42 EUR
230+0.37 EUR
256+0.33 EUR
286+0.3 EUR
500+0.29 EUR
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FQPF27P06 FQPF27P06.pdf
FQPF27P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 37 Stücke:
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25+3.44 EUR
37+2.3 EUR
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FQB27P06TM FQB27P06.pdf
FQB27P06TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 550 Stücke:
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24+3.59 EUR
30+2.88 EUR
34+2.55 EUR
40+2.17 EUR
50+1.9 EUR
100+1.7 EUR
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MJ15001G mj15001-d.pdf
MJ15001GMJ15001G
MJ15001GMJ15001G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Current gain: 25...150
Collector current: 15A
Collector-emitter voltage: 140V
Frequency: 2MHz
Produkt ist nicht verfügbar
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LMV324DR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Produkt ist nicht verfügbar
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LMV324DTBR2G lmv321-d.pdf
LMV324DTBR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Produkt ist nicht verfügbar
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MC14512BDR2G mc14512b-d.pdf
MC14512BDR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
auf Bestellung 2488 Stücke:
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AnzahlPrivatkunde
122+0.7 EUR
173+0.49 EUR
193+0.44 EUR
221+0.38 EUR
250+0.37 EUR
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FCPF16N60 FCP16N60-D.pdf
FCPF16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
Produkt ist nicht verfügbar
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CAT24C256YI-GT3 CAT24C256-D.PDF
CAT24C256YI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Mounting: SMD
Case: TSSOP8
Memory: 256kb EEPROM
Memory organisation: 32kx8bit
Interface: I2C
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
46+1.86 EUR
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NV24C256MUW3VTBG NV24C256MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C256WE-GT3 CAV24C256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C256YE-GT3 CAV24C256-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP1246BLD065R2G ncp1246-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Operating voltage: 8.9...26.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Case: SO7
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 58...72kHz
Topology: flyback
Output current: 500...800mA
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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MC74HC165ADR2G-Q mc74hc165a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
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MC74HC165ADTR2G-Q mc74hc165a-d.pdf
MC74HC165ADTR2G-Q
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
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MC74HC165AMN2TWG MC74HC165A-D.PDF
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: QFN16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
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MC74HC165AMN2TWG-Q mc74hc165a-d.pdf
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of output: complementary
Operating temperature: -55...125°C
Number of inputs: 9
Case: QFN16
Kind of integrated circuit: parallel in; shift register
Produkt ist nicht verfügbar
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FDS3590 fds3590-d.pdf
FDS3590
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
Mounting: SMD
On-state resistance: 86mΩ
Power dissipation: 2.5W
Drain current: 6.5A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Polarisation: unipolar
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
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48+1.81 EUR
69+1.24 EUR
84+1.01 EUR
113+0.75 EUR
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KSC2383YTA KSC2383.pdf
KSC2383YTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2970 Stücke:
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114+0.75 EUR
124+0.69 EUR
136+0.63 EUR
218+0.39 EUR
280+0.31 EUR
2000+0.2 EUR
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KSC2383OTA KSC2383.pdf
KSC2383OTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1137 Stücke:
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114+0.75 EUR
143+0.6 EUR
166+0.51 EUR
242+0.36 EUR
285+0.3 EUR
500+0.23 EUR
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FDMS86101 FDMS86101.pdf
FDMS86101
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDMS86101A fdms86101a-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86101DC fdms86101dc-d.pdf
FDMS86101DC
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14021BDR2G mc14014b-d.pdf
MC14021BDR2G
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 600µA
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
auf Bestellung 9173 Stücke:
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132+0.64 EUR
180+0.48 EUR
215+0.39 EUR
258+0.33 EUR
2500+0.3 EUR
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MC14049BDG mc14049b-d.pdf
MC14049BDG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
auf Bestellung 193 Stücke:
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125+0.68 EUR
149+0.57 EUR
165+0.51 EUR
188+0.45 EUR
193+0.44 EUR
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MC14082BDG MC14082BDG.PDF
MC14082BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: tube
Technology: CMOS
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Family: HEF4000B
Case: SO14
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Kind of gate: AND
auf Bestellung 413 Stücke:
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209+0.4 EUR
295+0.29 EUR
343+0.25 EUR
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MC14025BDG description MC14001B-D.pdf
MC14025BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of gate: NOR
auf Bestellung 20 Stücke:
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20+4.26 EUR
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MC14013BDTR2G MC14013B-D.pdf
MC14013BDTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Case: TSSOP14
Mounting: SMD
Number of channels: 2
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Technology: CMOS
Number of inputs: 4
Produkt ist nicht verfügbar
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MC74ACT74DG mc74ac74-d.pdf
MC74ACT74DG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.26 EUR
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MC74ACT74DTR2G MC74AC74-D.pdf
MC74ACT74DTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; IN: 4; TTL; ACT; SMD; TSSOP14; ACT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Number of inputs: 4
Technology: TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Manufacturer series: ACT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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ES2D ES2(A-J)%20N0160%20REV.D.pdf ES2D-D.pdf ES2_1.pdf es2a.pdf ES2A SERIES_L2102.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw GK-SMA_ES2A_THRU_ES2J-202604.pdf 1778296729689285.pdf 1756711237167803.pdf
ES2D
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
auf Bestellung 2332 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
252+0.33 EUR
334+0.25 EUR
365+0.24 EUR
397+0.21 EUR
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ES2DAF ES2DAF-D.PDF es2daf-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA flat; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA flat
Max. forward voltage: 0.95V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74HC164ADR2G-Q mc74hc164a-d.pdf
MC74HC164ADR2G-Q
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; parallel in; Ch: 1; SMD; SOIC14; HC; -55÷125°C; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: parallel in
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Number of inputs: 2
Produkt ist nicht verfügbar
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MC74HC164ADTR2G-Q mc74hc164a-d.pdf
MC74HC164ADTR2G-Q
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: TSSOP14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Delay time: 250ns
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Produkt ist nicht verfügbar
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MC74HC164BDR2G mc74hc164b-d.pdf
MC74HC164BDR2G
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC14; HC
Type of integrated circuit: digital
Kind of integrated circuit: parallel in; shift register
Mounting: SMD
Case: SOIC14
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V
Number of channels: 1
Kind of output: push-pull
Trigger: positive-edge-triggered
Number of inputs: 2
Number of outputs: 8
Produkt ist nicht verfügbar
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N93C66BT3ETAG N93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT93C66VI-GT3 CAT93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAV93C66VE-GT3 CAV93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAV93C66YE-GT3 CAV93C66-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FQP9N90C FQP9N90C.pdf
FQP9N90C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+6.08 EUR
23+3.71 EUR
50+3.53 EUR
Mindestbestellmenge: 15 Stücke
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FQPF9N90CT FQPF9N90C-D.PDF
FQPF9N90CT
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.32 EUR
19+4.52 EUR
23+3.75 EUR
Mindestbestellmenge: 14 Stücke
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TL331SN4T3G tl331-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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TL331VSN4T3G tl331-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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TL331SN4T1G tl331-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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MBR0530 MBR0530.pdf
MBR0530
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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BD13810STU BD136_138_140.pdf
BD13810STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
auf Bestellung 1139 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
151+0.57 EUR
167+0.51 EUR
188+0.45 EUR
480+0.4 EUR
Mindestbestellmenge: 151 Stücke
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BD138G BD136G-D.PDF
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
Produkt ist nicht verfügbar
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MOC3163M MOC3163M.pdf
MOC3163M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Slew rate: 1kV/μs
Kind of output: zero voltage crossing driver
Insulation voltage: 4.17kV
Type of optocoupler: optotriac
Trigger current: 5mA
Manufacturer series: MOC3163M
auf Bestellung 1058 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
82+1.04 EUR
103+0.82 EUR
111+0.77 EUR
117+0.74 EUR
122+0.7 EUR
500+0.62 EUR
750+0.6 EUR
1000+0.58 EUR
Mindestbestellmenge: 82 Stücke
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MB2S MB6S.pdf
MB2S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.63 EUR
Mindestbestellmenge: 52 Stücke
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LM301ADR2G lm301a-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 10V/μs
Input offset voltage: 7.5mV
Input bias current: 0.25µA
Input offset current: 50nA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC14555BDG MC14555B-D.pdf
MC14555BDG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Technology: CMOS
Number of inputs: 3
Kind of package: tube
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Number of channels: 2
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
Mindestbestellmenge: 120 Stücke
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FSB50450US fsb50450us-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Power dissipation: 14W
Integrated circuit features: MOSFET
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Operating voltage: 500V
Mounting: SMD
Produkt ist nicht verfügbar
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