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NCP1076STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1076STCT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1076BAP100G ONSEMI ncp1076a-d.pdf Category: Integrated circuits - Unclassified
Description: NCP1076BAP100G
auf Bestellung 395 Stücke:
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350+1.46 EUR
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NCP1075P065G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
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BZX84C4V7LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
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NST3904DXV6T1G ONSEMI nst3904dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NST3904F3T5G ONSEMI nst3904f3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MJF45H11G MJF45H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA8FFF8A5C6B51CC&compId=MJF44H11G-DTE.PDF?ci_sign=adb03b109efa686f7d16497074d94fbfd1825781 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Case: TO220FP
Current gain: 60
Mounting: THT
Frequency: 40MHz
Kind of package: tube
Power dissipation: 50W
auf Bestellung 116 Stücke:
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38+1.9 EUR
52+1.4 EUR
53+1.36 EUR
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NUP2105LT1G NUP2105LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF7227F2F500CE&compId=NUP2105L.PDF?ci_sign=9dc66564d4b677f2b3de9a2ee094de05e6905279 Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 16267 Stücke:
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179+0.4 EUR
447+0.16 EUR
534+0.13 EUR
577+0.12 EUR
694+0.1 EUR
1000+0.095 EUR
1500+0.091 EUR
2000+0.087 EUR
3000+0.083 EUR
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1N5344BRLG ONSEMI 1n5333b-d.pdf description Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
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MMBTA06 MMBTA06 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D674D772800A50&compId=MMBTA06-DTE.pdf?ci_sign=a2cca95d2900642c24f88a4d8dcb9d4306100719 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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SMMBTA06LT1G SMMBTA06LT1G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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278+0.26 EUR
382+0.19 EUR
417+0.17 EUR
548+0.13 EUR
645+0.11 EUR
920+0.078 EUR
1000+0.072 EUR
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MMBTA06WT1G MMBTA06WT1G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MMBTA06LT3G MMBTA06LT3G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SMMBTA06LT3G SMMBTA06LT3G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT1G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT3G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSR1020MW2T1G ONSEMI nsr1020mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
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MC74HC4538ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62C536A2FC0D3&compId=MC74HC4538A-D.pdf?ci_sign=b377db161c404a87da515d5dfd6c1d6357edec74 Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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NLV74HC4538ADR2G NLV74HC4538ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6356D606740D3&compId=MC74HC4538A-D.pdf?ci_sign=2eb53b963bd8ff40c1adfea8b8913f074fe47331 Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FDMS86150ET100 ONSEMI fdms86150et100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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MM5Z5V6ST1G MM5Z5V6ST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C3FBB19B03C0D6&compId=MM5ZxxxST1G.PDF?ci_sign=66af86ac46d65e253256a3f4a774672b6ec870e7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
auf Bestellung 3000 Stücke:
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556+0.13 EUR
736+0.097 EUR
940+0.076 EUR
1409+0.051 EUR
1634+0.044 EUR
Mindestbestellmenge: 556
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MC14018BDG MC14018BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7597C0D3&compId=MC14018B-D.pdf?ci_sign=05f1a9822cc80f00ab3ecd472cee4d1d42dcadb8 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: counter; divide by N
auf Bestellung 34 Stücke:
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34+2.1 EUR
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MC14018BDR2G MC14018BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
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MC14011UBDG MC14011UBDG ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
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167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
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MC14011BDR2G MC14011BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G MC14011UBDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
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FQB33N10TM FQB33N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
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FOD3150 FOD3150 ONSEMI FOD3150.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
auf Bestellung 383 Stücke:
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51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
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FDC642P ONSEMI fdc642p-d.pdf ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Drain current: -4A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
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NSR20F30NXT5G
+1
 		NSR20F30NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
auf Bestellung 966 Stücke:
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107+0.67 EUR
155+0.46 EUR
204+0.35 EUR
230+0.31 EUR
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LM285D-2.5R2G LM285D-2.5R2G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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KSD5041RTA KSD5041RTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE47631A00620D6&compId=KSD5041.pdf?ci_sign=997635a7f1bce6e5b02298a59e5b785187039794 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
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KSD1408YTU KSD1408YTU ONSEMI ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
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KSD560YTU KSD560YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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UJ3D1210KSD ONSEMI UJ3D1210KSD-D.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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UJ3D06560KSD ONSEMI UJ3D06560KSD-D.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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SZ1SMB5931BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP3420DR2G NCP3420DR2G ONSEMI ncp3420-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS ONSEMI 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1510+0.047 EUR
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NVMFS027N10MCLT1G ONSEMI nvmfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFWS027N10MCLTAG ONSEMI nvtfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDS4480 FDS4480 ONSEMI fds4480-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2328 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 63
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MMBT589LT1G MMBT589LT1G ONSEMI mmbt589lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
192+0.37 EUR
280+0.26 EUR
332+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
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1N5339BRLG 1N5339BRLG ONSEMI 1n5333b-d.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 148
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D-STPR-GEVK ONSEMI D-STPR-GEVK_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Interface: I2C; I2C - Slave; SPI
Kit contents: prototype board
Kind of connector: pin strips; screw
Components: AMIS30543
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Produkt ist nicht verfügbar
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SZMMBZ20VALT1G SZMMBZ20VALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Type of diode: TVS array
Max. forward impulse current: 1.4A
Number of channels: 2
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
auf Bestellung 5500 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
725+0.099 EUR
828+0.086 EUR
1058+0.068 EUR
1544+0.046 EUR
1931+0.037 EUR
3000+0.035 EUR
Mindestbestellmenge: 500
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NTF3055L108T1G NTF3055L108T1G ONSEMI NTF3055L108.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
auf Bestellung 1246 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
133+0.54 EUR
147+0.49 EUR
200+0.45 EUR
Mindestbestellmenge: 109
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2N6292G 2N6292G ONSEMI 2n6107-d.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
87+0.83 EUR
93+0.77 EUR
100+0.73 EUR
250+0.66 EUR
500+0.64 EUR
Mindestbestellmenge: 77
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LM393N LM393N ONSEMI LM393N-fai.pdf Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Produkt ist nicht verfügbar
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NSR10F40NXT5G NSR10F40NXT5G ONSEMI nsr10f40-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
230+0.31 EUR
265+0.27 EUR
327+0.22 EUR
376+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 167
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NSR10F20NXT5G ONSEMI nsr10f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSR1030QMUTWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
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NSR10F30NXT5G ONSEMI nsr10f30-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BVSS84LT1G BVSS84LT1G ONSEMI bss84lt1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.225W
On-state resistance: 10Ω
Kind of package: reel; tape
Gate-source voltage: ±20V
auf Bestellung 3151 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
260+0.28 EUR
368+0.19 EUR
432+0.17 EUR
603+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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MM5Z12VT1G MM5Z12VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
auf Bestellung 5995 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
550+0.13 EUR
916+0.078 EUR
1129+0.063 EUR
1916+0.037 EUR
2025+0.035 EUR
3000+0.034 EUR
Mindestbestellmenge: 358
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SZMM5Z12VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MM5Z4717T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CA4F3F20D700D8&compId=MM5Z4xxxT1G.PDF?ci_sign=ebf57ef151ccd1a797560830f787da2551b0304f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Produkt ist nicht verfügbar
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NCP1076STAT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1076STCT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1076BAP100G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - Unclassified
Description: NCP1076BAP100G
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.72 EUR
350+1.46 EUR
Mindestbestellmenge: 65
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NCP1075P065G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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BZX84C4V7LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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NST3904DXV6T1G nst3904dxv6t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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NST3904F3T5G nst3904f3-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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MJF45H11G pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA8FFF8A5C6B51CC&compId=MJF44H11G-DTE.PDF?ci_sign=adb03b109efa686f7d16497074d94fbfd1825781
MJF45H11G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Case: TO220FP
Current gain: 60
Mounting: THT
Frequency: 40MHz
Kind of package: tube
Power dissipation: 50W
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
38+1.9 EUR
52+1.4 EUR
53+1.36 EUR
Mindestbestellmenge: 33
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NUP2105LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF7227F2F500CE&compId=NUP2105L.PDF?ci_sign=9dc66564d4b677f2b3de9a2ee094de05e6905279
NUP2105LT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 16267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
447+0.16 EUR
534+0.13 EUR
577+0.12 EUR
694+0.1 EUR
1000+0.095 EUR
1500+0.091 EUR
2000+0.087 EUR
3000+0.083 EUR
Mindestbestellmenge: 179
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1N5344BRLG description 1n5333b-d.pdf
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 8.2V; reel,tape; CASE017AA; single diode; 10uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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MMBTA06 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D674D772800A50&compId=MMBTA06-DTE.pdf?ci_sign=a2cca95d2900642c24f88a4d8dcb9d4306100719
MMBTA06
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBTA06LT1G mmbta05lt1-d.pdf
SMMBTA06LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 5130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
382+0.19 EUR
417+0.17 EUR
548+0.13 EUR
645+0.11 EUR
920+0.078 EUR
1000+0.072 EUR
Mindestbestellmenge: 278
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MMBTA06WT1G mmbta06wt1-d.pdf
MMBTA06WT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MMBTA06LT3G mmbta05lt1-d.pdf
MMBTA06LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMMBTA06LT3G mmbta05lt1-d.pdf
SMMBTA06LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA06WT1G mmbta06wt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA06WT3G mmbta06wt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NSR1020MW2T1G nsr1020mw2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC4538ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62C536A2FC0D3&compId=MC74HC4538A-D.pdf?ci_sign=b377db161c404a87da515d5dfd6c1d6357edec74
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NLV74HC4538ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6356D606740D3&compId=MC74HC4538A-D.pdf?ci_sign=2eb53b963bd8ff40c1adfea8b8913f074fe47331
NLV74HC4538ADR2G
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMS86150ET100 fdms86150et100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM5Z5V6ST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C3FBB19B03C0D6&compId=MM5ZxxxST1G.PDF?ci_sign=66af86ac46d65e253256a3f4a774672b6ec870e7
MM5Z5V6ST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
736+0.097 EUR
940+0.076 EUR
1409+0.051 EUR
1634+0.044 EUR
Mindestbestellmenge: 556
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MC14018BDG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7597C0D3&compId=MC14018B-D.pdf?ci_sign=05f1a9822cc80f00ab3ecd472cee4d1d42dcadb8
MC14018BDG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: counter; divide by N
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
MC14018BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6
MC14018BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Produkt ist nicht verfügbar
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MC14011UBDG MC14001B-D.pdf
MC14011UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 167
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MC14011BDR2G MC14001B-D.pdf
MC14011BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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MC14011UBDR2G MC14001B-D.pdf
MC14011UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
Produkt ist nicht verfügbar
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FQB33N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec
FQB33N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
Produkt ist nicht verfügbar
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FOD3150 FOD3150.pdf
FOD3150
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
Mindestbestellmenge: 51
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FDC642P fdc642p-d.pdf ONSM-S-A0003579657-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Drain current: -4A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±8V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: -20V
Produkt ist nicht verfügbar
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NSR20F30NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0
NSR20F30NXT5G
+1
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
155+0.46 EUR
204+0.35 EUR
230+0.31 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
LM285D-2.5R2G LM285_LM385B.PDF
LM285D-2.5R2G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD5041RTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE47631A00620D6&compId=KSD5041.pdf?ci_sign=997635a7f1bce6e5b02298a59e5b785187039794
KSD5041RTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Case: TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Produkt ist nicht verfügbar
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KSD1408YTU ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw
KSD1408YTU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
Produkt ist nicht verfügbar
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KSD560YTU pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7
KSD560YTU
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Case: TO220AB
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 100V
Kind of package: tube
Polarisation: bipolar
Produkt ist nicht verfügbar
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UJ3D1210KSD UJ3D1210KSD-D.PDF
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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UJ3D06560KSD UJ3D06560KSD-D.PDF
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; tube
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
Technology: SiC
Max. forward voltage: 650V
Load current: 30A
Max. load current: 107.2A
Max. forward impulse current: 1.25kA
Max. off-state voltage: 650V
Kind of package: tube
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5931BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP3420DR2G ncp3420-d.pdf
NCP3420DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS.pdf
1N4148WS
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 1510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1510+0.047 EUR
Mindestbestellmenge: 715
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NVMFS027N10MCLT1G nvmfs027n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFWS027N10MCLTAG nvtfs027n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDS4480 fds4480-d.pdf
FDS4480
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 63
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MMBT589LT1G mmbt589lt1-d.pdf
MMBT589LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
192+0.37 EUR
280+0.26 EUR
332+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
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1N5339BRLG 1n5333b-d.pdf
1N5339BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 148
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D-STPR-GEVK D-STPR-GEVK_Web.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: AMIS30543
Interface: I2C; I2C - Slave; SPI
Kit contents: prototype board
Kind of connector: pin strips; screw
Components: AMIS30543
Type of accessories for development kits: expansion board
development kits accessories features: Arduino Shield compatible; stepper motor driver
Produkt ist nicht verfügbar
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SZMMBZ20VALT1G mmbz5v6alt1-d.pdf
SZMMBZ20VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Application: automotive industry
Type of diode: TVS array
Max. forward impulse current: 1.4A
Number of channels: 2
Tolerance: ±5%
Max. off-state voltage: 17V
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
auf Bestellung 5500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
725+0.099 EUR
828+0.086 EUR
1058+0.068 EUR
1544+0.046 EUR
1931+0.037 EUR
3000+0.035 EUR
Mindestbestellmenge: 500
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NTF3055L108T1G NTF3055L108.PDF
NTF3055L108T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
auf Bestellung 1246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
147+0.49 EUR
200+0.45 EUR
Mindestbestellmenge: 109
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2N6292G description 2n6107-d.pdf
2N6292G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector current: 7A
Collector-emitter voltage: 80V
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
87+0.83 EUR
93+0.77 EUR
100+0.73 EUR
250+0.66 EUR
500+0.64 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
LM393N LM393N-fai.pdf
LM393N
Hersteller: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Produkt ist nicht verfügbar
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NSR10F40NXT5G nsr10f40-d.pdf
NSR10F40NXT5G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
265+0.27 EUR
327+0.22 EUR
376+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 167
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NSR10F20NXT5G nsr10f20-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSR1030QMUTWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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NSR10F30NXT5G nsr10f30-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BVSS84LT1G bss84lt1-d.pdf
BVSS84LT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT23
Mounting: SMD
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.225W
On-state resistance: 10Ω
Kind of package: reel; tape
Gate-source voltage: ±20V
auf Bestellung 3151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
260+0.28 EUR
368+0.19 EUR
432+0.17 EUR
603+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 193
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MM5Z12VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc
MM5Z12VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
auf Bestellung 5995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
550+0.13 EUR
916+0.078 EUR
1129+0.063 EUR
1916+0.037 EUR
2025+0.035 EUR
3000+0.034 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
SZMM5Z12VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF96C405FC01D0A0D6&compId=MM5ZxxxT1G.PDF?ci_sign=50a5312bc1eb36c8e1e32b0a5807402ec676aafc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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MM5Z4717T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CA4F3F20D700D8&compId=MM5Z4xxxT1G.PDF?ci_sign=ebf57ef151ccd1a797560830f787da2551b0304f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Manufacturer series: MM5Z4xxxT1G
Produkt ist nicht verfügbar
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