| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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1N4002G | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4002RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Manufacturer standard package: 5000pcs. |
auf Bestellung 4921 Stücke: Lieferzeit 14-21 Tag (e) |
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| FUSB302TMPX | ONSEMI |
Category: Battery and battery cells controllers Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps Type of integrated circuit: interface Mounting: SMD DC supply current: 25µA Operating temperature: -40...85°C USB speed: Full Speed Case: WQFN14 Interface: USB; USB 3.1 Kind of integrated circuit: transceiver Supply voltage: 2.7...5.5V Data transfer rate: 5Gbps |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDB2614 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK On-state resistance: 27mΩ Mounting: SMD Power dissipation: 260W Gate charge: 99nC Polarisation: unipolar Technology: PowerTrench® Drain current: 62A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD437G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO225 Current gain: 85...375 Mounting: THT Kind of package: bulk Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BD437TG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: TO225 Current gain: 85...375 Mounting: THT Kind of package: bulk Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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74AC04MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Family: AC Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 1 |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC04MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Number of inputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.6A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 155mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1620CTRG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 85ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common anode; double Case: TO220AB Kind of package: tube Reverse recovery time: 85ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1620CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Max. forward impulse current: 100A Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
auf Bestellung 409 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC04SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74AC04DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: AC |
auf Bestellung 2288 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC04DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N3595TR | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
auf Bestellung 3101 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N3595 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Max. forward impulse current: 0.2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 3µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| KA5M0365RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 2.4A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -40...85°C Topology: flyback; forward On-state resistance: 4.5Ω Duty cycle factor: 72...82% Kind of package: tube Power: 75W Operating voltage: 9...27V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP4328ASNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; TSOP5; 2.5÷40VDC Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Case: TSOP5 Number of channels: 1 Operating voltage: 2.5...40V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP4328BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; TSOP6; 2.5÷40VDC Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Case: TSOP6 Number of channels: 1 Frequency: 1kHz Operating voltage: 2.5...40V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74AC74DR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Technology: TTL Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74AC74DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Technology: CMOS Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: WQFN10 Operating temperature: 0...70°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2N6520TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 30...200 Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz |
auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
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| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Operating voltage: 1.6...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 450ns Operating temperature: -40...85°C Clock frequency: 1MHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: US8 Interface: I2C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Operating voltage: 1.6...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 450ns Operating temperature: -40...125°C Clock frequency: 1MHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: US8 Interface: I2C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CAT24C02TDI-GT3A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5 Type of integrated circuit: EEPROM memory Operating voltage: 1.7...5.5V Kind of memory: EEPROM Mounting: SMD Memory: 2kb EEPROM Memory organisation: 256x8bit Case: SOT23-5 Interface: I2C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CAV24C02WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 900ns Operating temperature: -40...125°C Clock frequency: 400kHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: SOIC8 Interface: I2C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV24C02YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Kind of memory: EEPROM Mounting: SMD Access time: 900ns Operating temperature: -40...125°C Clock frequency: 400kHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: TSSOP8 Interface: I2C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP3063BDR2G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3...40V DC Output voltage: 1.25...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Topology: boost; buck; buck-boost Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Operating voltage: 5...40V DC Frequency: 110...190kHz |
auf Bestellung 1944 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRB2545CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Kind of package: reel; tape Max. load current: 30A |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1540G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 60ns Max. load current: 30A |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS1540T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 0.54V Max. load current: 3A Kind of package: reel; tape |
auf Bestellung 520 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF27P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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MJ15001G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 15A Power dissipation: 200W Case: TO3 Current gain: 25...150 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| LMV324DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LMV324DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B Type of integrated circuit: digital Mounting: SMD Case: SO16 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Supply voltage: 3...18V DC Kind of integrated circuit: data selector Technology: TTL Number of channels: 8 Family: HEF4000B |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF16N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 70nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CAT24C256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: TSSOP8 |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV24C256WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV24C256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP1246BLD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC74HC165ADR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: SOIC16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC165ADTR2G-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: TSSOP16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74HC165AMN2TWG | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9 Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V Kind of output: complementary; push-pull Operating temperature: -55...125°C Trigger: positive-edge-triggered Number of inputs: 9 Case: QFN16 Family: HC Number of outputs: 1 Kind of integrated circuit: parallel in; shift register Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC74HC165AMN2TWG-Q | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C Type of integrated circuit: digital Mounting: SMD Delay time: 225ns Supply voltage: 4.5...5.5V Kind of output: complementary Operating temperature: -55...125°C Number of inputs: 9 Case: QFN16 Kind of integrated circuit: parallel in; shift register |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDS3590 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 On-state resistance: 86mΩ Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 |
auf Bestellung 417 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC2383YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 2906 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC2383OTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Current gain: 100...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 1135 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86101 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FDMS86101A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14021BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Quiescent current: 600µA Kind of package: reel; tape Case: SO16 Family: HEF4000B Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous Number of channels: 1 |
auf Bestellung 9143 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14049BDG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Case: SO16 Kind of integrated circuit: buffer; inverting Number of channels: 6 |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14082BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Delay time: 130ns Mounting: SMD Supply voltage: 3...18V DC Kind of gate: AND Type of integrated circuit: digital Operating temperature: -55...125°C Technology: CMOS Number of inputs: 4 Kind of package: tube Case: SO14 Family: HEF4000B Number of channels: dual; 2 |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14025BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Kind of package: tube Number of channels: triple; 3 Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Case: SO14 Mounting: SMD Kind of gate: NOR |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N4002G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 118+ | 0.71 EUR |
| 1N4002RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Manufacturer standard package: 5000pcs.
auf Bestellung 4921 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 527+ | 0.17 EUR |
| 625+ | 0.13 EUR |
| 729+ | 0.12 EUR |
| 851+ | 0.1 EUR |
| 1042+ | 0.082 EUR |
| 1214+ | 0.07 EUR |
| 1356+ | 0.063 EUR |
| FUSB302TMPX |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 25µA
Operating temperature: -40...85°C
USB speed: Full Speed
Case: WQFN14
Interface: USB; USB 3.1
Kind of integrated circuit: transceiver
Supply voltage: 2.7...5.5V
Data transfer rate: 5Gbps
Category: Battery and battery cells controllers
Description: IC: interface; transceiver; WQFN14; 2.7÷5.5V; 5Gbps
Type of integrated circuit: interface
Mounting: SMD
DC supply current: 25µA
Operating temperature: -40...85°C
USB speed: Full Speed
Case: WQFN14
Interface: USB; USB 3.1
Kind of integrated circuit: transceiver
Supply voltage: 2.7...5.5V
Data transfer rate: 5Gbps
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDB2614 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
On-state resistance: 27mΩ
Mounting: SMD
Power dissipation: 260W
Gate charge: 99nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
On-state resistance: 27mΩ
Mounting: SMD
Power dissipation: 260W
Gate charge: 99nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BD437G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD437TG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 85...375
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC04MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Family: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Family: AC
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 129+ | 0.67 EUR |
| 145+ | 0.58 EUR |
| 74AC04MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR5198NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.6A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.6A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 237+ | 0.36 EUR |
| 291+ | 0.3 EUR |
| 341+ | 0.25 EUR |
| 397+ | 0.21 EUR |
| 486+ | 0.18 EUR |
| 556+ | 0.15 EUR |
| MUR1620CTRG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 85ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 85ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common anode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 85ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 3.01 EUR |
| 47+ | 1.83 EUR |
| 50+ | 1.77 EUR |
| MUR1620CTG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; Ifsm: 100A; TO220AB; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.7 EUR |
| 41+ | 2.09 EUR |
| 48+ | 1.78 EUR |
| 70+ | 1.23 EUR |
| 100+ | 1.09 EUR |
| 74AC04SCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC04DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: AC
auf Bestellung 2288 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 186+ | 0.46 EUR |
| 210+ | 0.4 EUR |
| 246+ | 0.35 EUR |
| 274+ | 0.31 EUR |
| 302+ | 0.29 EUR |
| 334+ | 0.25 EUR |
| MC74AC04DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N3595TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
auf Bestellung 3101 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 782+ | 0.11 EUR |
| 1161+ | 0.074 EUR |
| 1489+ | 0.057 EUR |
| 1640+ | 0.052 EUR |
| 1N3595 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 200mA; Ifsm: 200mA; DO35; Ufmax: 1V; 3us
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Max. forward impulse current: 0.2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 3µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| KA5M0365RYDTU |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.4A; 650V; 67kHz; Ch: 1; TO220F-4FL; 4.5Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 2.4A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -40...85°C
Topology: flyback; forward
On-state resistance: 4.5Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 75W
Operating voltage: 9...27V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NCP4328ASNT1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP5
Number of channels: 1
Operating voltage: 2.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP5; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP5
Number of channels: 1
Operating voltage: 2.5...40V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP4328BSNT1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP6
Number of channels: 1
Frequency: 1kHz
Operating voltage: 2.5...40V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; 2.5÷40VDC
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Case: TSOP6
Number of channels: 1
Frequency: 1kHz
Operating voltage: 2.5...40V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MC74AC74DR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; TTL; SMD; SO14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: TTL
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC74DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: CMOS
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; SMD; TSSOP14; 40uA; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Technology: CMOS
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| MC34072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34072AMTTBG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: WQFN10
Operating temperature: 0...70°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34072VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6520TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 30...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 30...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 228+ | 0.37 EUR |
| 374+ | 0.23 EUR |
| 442+ | 0.19 EUR |
| N24C02UDTG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Operating voltage: 1.6...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 450ns
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: US8
Interface: I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Operating voltage: 1.6...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 450ns
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: US8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| N24C02UVTG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Operating voltage: 1.6...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: US8
Interface: I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Operating voltage: 1.6...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: US8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C02TDI-GT3A |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Memory: 2kb EEPROM
Memory organisation: 256x8bit
Case: SOT23-5
Interface: I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; SOT23-5
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Mounting: SMD
Memory: 2kb EEPROM
Memory organisation: 256x8bit
Case: SOT23-5
Interface: I2C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C02WE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: SOIC8
Interface: I2C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C02YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Kind of memory: EEPROM
Mounting: SMD
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: TSSOP8
Interface: I2C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3063BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 5...40V DC
Frequency: 110...190kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3÷40VDC; Uout: 1.25÷40VDC; 1.5A; SO8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3...40V DC
Output voltage: 1.25...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Operating voltage: 5...40V DC
Frequency: 110...190kHz
auf Bestellung 1944 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 64+ | 1.34 EUR |
| 71+ | 1.21 EUR |
| 80+ | 1.07 EUR |
| 84+ | 1.02 EUR |
| MBRB2545CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Kind of package: reel; tape
Max. load current: 30A
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.61 EUR |
| 35+ | 2.46 EUR |
| 45+ | 1.93 EUR |
| 51+ | 1.69 EUR |
| 57+ | 1.5 EUR |
| MUR1540G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15A; tube; Ifsm: 200A; TO220-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 60ns
Max. load current: 30A
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 1.21 EUR |
| MBRS1540T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 3A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Max. load current: 3A
Kind of package: reel; tape
auf Bestellung 520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 176+ | 0.49 EUR |
| 207+ | 0.42 EUR |
| 230+ | 0.37 EUR |
| 256+ | 0.33 EUR |
| 286+ | 0.3 EUR |
| 500+ | 0.29 EUR |
| FQPF27P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.44 EUR |
| 37+ | 2.3 EUR |
| FQB27P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 3.59 EUR |
| 30+ | 2.88 EUR |
| 34+ | 2.55 EUR |
| 40+ | 2.17 EUR |
| 50+ | 1.9 EUR |
| 100+ | 1.7 EUR |
| MJ15001G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMV324DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Produkt ist nicht verfügbar
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| LMV324DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Produkt ist nicht verfügbar
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| MC14512BDR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Technology: TTL
Number of channels: 8
Family: HEF4000B
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 0.7 EUR |
| 173+ | 0.49 EUR |
| 193+ | 0.44 EUR |
| 221+ | 0.38 EUR |
| 250+ | 0.37 EUR |
| FCPF16N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 48A
Gate charge: 70nC
Produkt ist nicht verfügbar
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| CAT24C256YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 1.8÷5.5V; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.86 EUR |
| NV24C256MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CAV24C256WE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C256YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1246BLD065R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74HC165ADR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; SOIC16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: SOIC16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165ADTR2G-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; TSSOP16; HC
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: TSSOP16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165AMN2TWG |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: QFN16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register,parallel in; Ch: 1; SMD; QFN16; HC; IN: 9
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V
Kind of output: complementary; push-pull
Operating temperature: -55...125°C
Trigger: positive-edge-triggered
Number of inputs: 9
Case: QFN16
Family: HC
Number of outputs: 1
Kind of integrated circuit: parallel in; shift register
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC165AMN2TWG-Q |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of output: complementary
Operating temperature: -55...125°C
Number of inputs: 9
Case: QFN16
Kind of integrated circuit: parallel in; shift register
Category: Shift registers
Description: IC: digital; shift register,parallel in; SMD; QFN16; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 225ns
Supply voltage: 4.5...5.5V
Kind of output: complementary
Operating temperature: -55...125°C
Number of inputs: 9
Case: QFN16
Kind of integrated circuit: parallel in; shift register
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDS3590 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
On-state resistance: 86mΩ
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
On-state resistance: 86mΩ
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 49+ | 1.77 EUR |
| 70+ | 1.23 EUR |
| 86+ | 1 EUR |
| 115+ | 0.74 EUR |
| KSC2383YTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 124+ | 0.69 EUR |
| 136+ | 0.63 EUR |
| 218+ | 0.39 EUR |
| 280+ | 0.31 EUR |
| 2000+ | 0.2 EUR |
| KSC2383OTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 1135 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 114+ | 0.75 EUR |
| 143+ | 0.6 EUR |
| 166+ | 0.51 EUR |
| 242+ | 0.36 EUR |
| 285+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| FDMS86101 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDMS86101A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14021BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 600µA
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 600µA
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Number of channels: 1
auf Bestellung 9143 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 132+ | 0.64 EUR |
| 180+ | 0.48 EUR |
| 215+ | 0.39 EUR |
| 258+ | 0.33 EUR |
| 2500+ | 0.3 EUR |
| MC14049BDG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Case: SO16
Kind of integrated circuit: buffer; inverting
Number of channels: 6
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 149+ | 0.57 EUR |
| 165+ | 0.51 EUR |
| 188+ | 0.45 EUR |
| 193+ | 0.44 EUR |
| MC14082BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Delay time: 130ns
Mounting: SMD
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Delay time: 130ns
Mounting: SMD
Supply voltage: 3...18V DC
Kind of gate: AND
Type of integrated circuit: digital
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 4
Kind of package: tube
Case: SO14
Family: HEF4000B
Number of channels: dual; 2
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 240+ | 0.36 EUR |
| 266+ | 0.32 EUR |
| 291+ | 0.3 EUR |
| 293+ | 0.29 EUR |
| MC14025BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of gate: NOR
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: triple; 3
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of gate: NOR
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.26 EUR |