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NTHL040N65S3HF ONSEMI nthl040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 32mΩ
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NVHL040N65S3F ONSEMI nvhl040n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Drain current: 65A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
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NVHL040N65S3HF ONSEMI nvhl040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Produkt ist nicht verfügbar
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NTHLD040N65S3HF ONSEMI nthld040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 32mΩ
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NVH4L040N65S3F ONSEMI NVH4L040N65S3F.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 33.8mΩ
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NTHL040N65S3F ONSEMI NTHL040N65S3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: SuperFET®
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
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NCV8170BXV180T2G ONSEMI ncv8170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT563; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 1.8V
Case: SOT563
Produkt ist nicht verfügbar
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NCP1077STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1077STBT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1077STCT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1076AAP065G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
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NCP1076AAP100G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.5...20V DC
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NCP1076ABP100G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
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NCP1076BAP065G ONSEMI ncp1076a-d.pdf NCP1076A-D.PDF Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
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NCP1076P100G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1076STAT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1076STCT3G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1076BAP100G ONSEMI ncp1076a-d.pdf Category: Integrated circuits - Unclassified
Description: NCP1076BAP100G
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.72 EUR
350+1.46 EUR
Mindestbestellmenge: 65
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BZX84C4V7LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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NST3904DXV6T1G ONSEMI nst3904dxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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NST3904F3T5G ONSEMI nst3904f3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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MJF45H11G MJF45H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA8FFF8A5C6B51CC&compId=MJF44H11G-DTE.PDF?ci_sign=adb03b109efa686f7d16497074d94fbfd1825781 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Case: TO220FP
Current gain: 60
Mounting: THT
Frequency: 40MHz
Kind of package: tube
Power dissipation: 50W
auf Bestellung 116 Stücke:
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33+2.17 EUR
38+1.9 EUR
52+1.4 EUR
53+1.36 EUR
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NUP2105LT1G NUP2105LT1G ONSEMI NUP2105L.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 6048 Stücke:
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179+0.4 EUR
447+0.16 EUR
534+0.13 EUR
577+0.12 EUR
694+0.1 EUR
1000+0.095 EUR
1500+0.091 EUR
2000+0.087 EUR
3000+0.083 EUR
Mindestbestellmenge: 179
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MMBTA06 MMBTA06 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D674D772800A50&compId=MMBTA06-DTE.pdf?ci_sign=a2cca95d2900642c24f88a4d8dcb9d4306100719 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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SMMBTA06LT1G SMMBTA06LT1G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 5130 Stücke:
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278+0.26 EUR
382+0.19 EUR
417+0.17 EUR
548+0.13 EUR
645+0.11 EUR
920+0.078 EUR
1000+0.072 EUR
Mindestbestellmenge: 278
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MMBTA06WT1G MMBTA06WT1G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MMBTA06LT3G MMBTA06LT3G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SMMBTA06LT3G SMMBTA06LT3G ONSEMI mmbta05lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBTA06WT1G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SMMBTA06WT3G ONSEMI mmbta06wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSR1020MW2T1G ONSEMI nsr1020mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
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FDMS86150ET100 ONSEMI fdms86150et100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14018BDG MC14018BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7597C0D3&compId=MC14018B-D.pdf?ci_sign=05f1a9822cc80f00ab3ecd472cee4d1d42dcadb8 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: counter; divide by N
auf Bestellung 34 Stücke:
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34+2.1 EUR
Mindestbestellmenge: 34
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MC14018BDR2G MC14018BDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6 Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
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MC14011UBDG MC14011UBDG ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 167
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MC14011BDR2G MC14011BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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MC14011UBDR2G MC14011UBDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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FQB33N10LTM FQB33N10LTM ONSEMI fqb33n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
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FQB33N10TM FQB33N10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
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FOD3150 FOD3150 ONSEMI FOD3150.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
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NSR20F30NXT5G
+1
 		NSR20F30NXT5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
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LM285D-2.5R2G LM285D-2.5R2G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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KSD1408YTU KSD1408YTU ONSEMI ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
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SZ1SMB5931BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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NCP3420DR2G NCP3420DR2G ONSEMI ncp3420-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
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1N4148WS 1N4148WS ONSEMI 1N4148WS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
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834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
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1825+0.039 EUR
2058+0.035 EUR
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FDS4480 FDS4480 ONSEMI fds4480-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
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100+0.8 EUR
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MMBT589LT1G MMBT589LT1G ONSEMI mmbt589lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
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332+0.22 EUR
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1N5339BRLG 1N5339BRLG ONSEMI 1n5333b-d.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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500+0.2 EUR
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTF3055L108T1G NTF3055L108T1G ONSEMI NTF3055L108.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
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LM393N LM393N ONSEMI LM393N-fai.pdf Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
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NSR10F40NXT5G NSR10F40NXT5G ONSEMI nsr10f40-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
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327+0.22 EUR
376+0.19 EUR
500+0.17 EUR
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NSR10F20NXT5G ONSEMI nsr10f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
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NSR1030QMUTWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
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NSR10F30NXT5G ONSEMI nsr10f30-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
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MC79M15CDTRKG MC79M15CDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
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MC79M15CTG MC79M15CTG ONSEMI MC79M00-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
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MC79M15BDTRKG MC79M15BDTRKG ONSEMI MC79M00-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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MC79M15BTG ONSEMI mc79m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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NTHL040N65S3HF nthl040n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 32mΩ
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NVHL040N65S3F nvhl040n65s3f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Drain current: 65A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
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NVHL040N65S3HF nvhl040n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
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NTHLD040N65S3HF nthld040n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 32mΩ
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NVH4L040N65S3F NVH4L040N65S3F.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 33.8mΩ
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NTHL040N65S3F NTHL040N65S3F.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: SuperFET®
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
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NCV8170BXV180T2G ncv8170-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT563; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 1.8V
Case: SOT563
Produkt ist nicht verfügbar
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NCP1077STAT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1077STBT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1077STCT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.8A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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NCP1076AAP065G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
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NCP1076AAP100G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.5...20V DC
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NCP1076ABP100G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
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NCP1076BAP065G ncp1076a-d.pdf NCP1076A-D.PDF
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.8Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NCP1076P100G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1076STAT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1076STCT3G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 117...143kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP1076BAP100G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - Unclassified
Description: NCP1076BAP100G
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.72 EUR
350+1.46 EUR
Mindestbestellmenge: 65
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BZX84C4V7LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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NST3904DXV6T1G nst3904dxv6t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
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NST3904F3T5G nst3904f3-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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MJF45H11G pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA8FFF8A5C6B51CC&compId=MJF44H11G-DTE.PDF?ci_sign=adb03b109efa686f7d16497074d94fbfd1825781
MJF45H11G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Case: TO220FP
Current gain: 60
Mounting: THT
Frequency: 40MHz
Kind of package: tube
Power dissipation: 50W
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
38+1.9 EUR
52+1.4 EUR
53+1.36 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NUP2105LT1G NUP2105L.PDF
NUP2105LT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
auf Bestellung 6048 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
447+0.16 EUR
534+0.13 EUR
577+0.12 EUR
694+0.1 EUR
1000+0.095 EUR
1500+0.091 EUR
2000+0.087 EUR
3000+0.083 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA06 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D674D772800A50&compId=MMBTA06-DTE.pdf?ci_sign=a2cca95d2900642c24f88a4d8dcb9d4306100719
MMBTA06
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBTA06LT1G mmbta05lt1-d.pdf
SMMBTA06LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 5130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
382+0.19 EUR
417+0.17 EUR
548+0.13 EUR
645+0.11 EUR
920+0.078 EUR
1000+0.072 EUR
Mindestbestellmenge: 278
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MMBTA06WT1G mmbta06wt1-d.pdf
MMBTA06WT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MMBTA06LT3G mmbta05lt1-d.pdf
MMBTA06LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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SMMBTA06LT3G mmbta05lt1-d.pdf
SMMBTA06LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA06WT1G mmbta06wt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMBTA06WT3G mmbta06wt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NSR1020MW2T1G nsr1020mw2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMS86150ET100 fdms86150et100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 617A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 617A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14018BDG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7597C0D3&compId=MC14018B-D.pdf?ci_sign=05f1a9822cc80f00ab3ecd472cee4d1d42dcadb8
MC14018BDG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B; tube
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: counter; divide by N
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
MC14018BDR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D759900D3&compId=MC14018B-D.pdf?ci_sign=30f91d0bdbbb5b91cfa60a97e577cad4d508e6c6
MC14018BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; divide by N,counter; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: counter; divide by N
Produkt ist nicht verfügbar
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MC14011UBDG MC14001B-D.pdf
MC14011UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
237+0.3 EUR
261+0.27 EUR
281+0.25 EUR
298+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 167
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MC14011BDR2G MC14001B-D.pdf
MC14011BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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MC14011UBDR2G MC14001B-D.pdf
MC14011UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Produkt ist nicht verfügbar
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FQB33N10LTM fqb33n10l-d.pdf
FQB33N10LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 40nC
Power dissipation: 127W
Pulsed drain current: 132A
Technology: QFET®
On-state resistance: 55mΩ
Produkt ist nicht verfügbar
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FQB33N10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED781972E12E7C5E259&compId=FQB33N10.pdf?ci_sign=8990e0662a57f042b69c93ae1340831d24cc26ec
FQB33N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 51nC
Power dissipation: 127W
Technology: QFET®
On-state resistance: 52mΩ
Produkt ist nicht verfügbar
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FOD3150 FOD3150.pdf
FOD3150
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
Mindestbestellmenge: 51
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NSR20F30NXT5G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BDF6FA86C160CE&compId=NSR20F30NXT5G.PDF?ci_sign=a90ff8430566942f0be3aa52ee505ea9dfb3e7e0
NSR20F30NXT5G
+1
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2; SMD; 30V; 2A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. forward voltage: 0.48V
Max. off-state voltage: 30V
Max. load current: 4A
Max. forward impulse current: 28A
Case: DSN0603-2
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
155+0.46 EUR
204+0.35 EUR
230+0.31 EUR
Mindestbestellmenge: 107
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LM285D-2.5R2G LM285_LM385B.PDF
LM285D-2.5R2G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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KSD1408YTU ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw
KSD1408YTU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Case: TO220FP
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Type of transistor: NPN
Collector-emitter voltage: 80V
Polarisation: bipolar
Current gain: 120...240
Kind of package: tube
Frequency: 8MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZ1SMB5931BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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NCP3420DR2G ncp3420-d.pdf
NCP3420DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
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1N4148WS 1N4148WS.pdf
1N4148WS
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
auf Bestellung 6205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
834+0.086 EUR
926+0.077 EUR
1226+0.058 EUR
1386+0.052 EUR
1825+0.039 EUR
2058+0.035 EUR
3000+0.034 EUR
Mindestbestellmenge: 715
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FDS4480 fds4480-d.pdf
FDS4480
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
auf Bestellung 2318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
72+1.01 EUR
81+0.89 EUR
100+0.8 EUR
500+0.76 EUR
Mindestbestellmenge: 63
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MMBT589LT1G mmbt589lt1-d.pdf
MMBT589LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Power dissipation: 0.31/0.71W
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 1521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
192+0.37 EUR
280+0.26 EUR
332+0.22 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139
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1N5339BRLG 1n5333b-d.pdf
1N5339BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
300+0.24 EUR
323+0.22 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 148
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTF3055L108T1G NTF3055L108.PDF
NTF3055L108T1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
auf Bestellung 1246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
133+0.54 EUR
147+0.49 EUR
200+0.45 EUR
Mindestbestellmenge: 109
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LM393N LM393N-fai.pdf
LM393N
Hersteller: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Produkt ist nicht verfügbar
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NSR10F40NXT5G nsr10f40-d.pdf
NSR10F40NXT5G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 18A
Kind of package: reel; tape
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
230+0.31 EUR
265+0.27 EUR
327+0.22 EUR
376+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 167
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NSR10F20NXT5G nsr10f20-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSR1030QMUTWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2EF742343A0DC&compId=NSR1030QMU.PDF?ci_sign=13b552b9ce8dc9ae7b9bb1a1274a98f9e06da466
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 30V; If: 1A; Ifsm: 12A; uDFN4
Type of bridge rectifier: single-phase
Max. off-state voltage: 30V
Load current: 1A
Max. forward impulse current: 12A
Case: uDFN4
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 0.6V
Features of semiconductor devices: Schottky
Produkt ist nicht verfügbar
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NSR10F30NXT5G nsr10f30-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; 0502; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: 0502
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 18A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC79M15CDTRKG MC79M00-D.PDF
MC79M15CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2029 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
192+0.37 EUR
211+0.34 EUR
243+0.29 EUR
Mindestbestellmenge: 132
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MC79M15CTG MC79M00-D.PDF
MC79M15CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
119+0.6 EUR
Mindestbestellmenge: 119
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MC79M15BDTRKG MC79M00-D.PDF
MC79M15BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
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MC79M15BTG mc79m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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