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BCX17LT1G BCX17LT1G ONSEMI BCX1xLT1G.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
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NSVBCX17LT1G NSVBCX17LT1G ONSEMI bcx17lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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TL431CLPRAG TL431CLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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BC850CLT1G BC850CLT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BC850BLT1G BC850BLT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVBC850CLT1G NSVBC850CLT1G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBC850BLT1G NSVBC850BLT1G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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FJL6920TU FJL6920TU ONSEMI FJL6920TU-dte.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 20A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 20A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Current gain: 5.5...8.5
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PZT3904T1G PZT3904T1G ONSEMI PZT3904T1G.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MMBT6427LT1G MMBT6427LT1G ONSEMI MMBT6427LT1G.PDF Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBT6427LT1G ONSEMI mmbt6427lt1-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MC74AC04DG MC74AC04DG ONSEMI MC74ACT04DR2G.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Kind of package: tube
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
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MC74ACT574DWG MC74ACT574DWG ONSEMI MC74ACT574DWR2G.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
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MC74AC02DG MC74AC02DG ONSEMI mc74ac02-d.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
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MC74AC05DG MC74AC05DG ONSEMI MC74AC05-D.pdf Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: AC
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MC74ACT153DG MC74ACT153DG ONSEMI MC74AC153-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 2
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Number of inputs: 7
Family: ACT
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MC74ACT14DG MC74ACT14DG ONSEMI mc74ac14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
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MC74ACT245DTG MC74ACT245DTG ONSEMI MC74AC245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Technology: TTL
Family: ACT
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
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MC74ACT574DWR2G MC74ACT574DWR2G ONSEMI MC74ACT574DWR2G.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
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MC14584BDR2G MC14584BDR2G ONSEMI MC14584B-D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
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1N4737ATR 1N4737ATR ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 7.5V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 7.5V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
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LM239DR2G LM239DR2G ONSEMI LM239DR2G.PDF description Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; SMT; SO14
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating voltage: 2...36V
Produkt ist nicht verfügbar
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LM239DTBR2G LM239DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Input offset voltage: 5mV
Input offset current: 5nA
Kind of package: reel; tape
Operating voltage: 3...36V
Operating temperature: -25...85°C
Input bias current: 25nA
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1N4746A-T50A 1N4746A-T50A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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6N135M ONSEMI 6N135M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 20V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 7-50%@16mA
Case: DIP8
Turn-on time: 1.5µs
Turn-off time: 1.5µs
Manufacturer series: 6N135M
Collector-emitter voltage: 20V
Produkt ist nicht verfügbar
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TIP102G TIP102G ONSEMI TIP102G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Current gain: 20000
Produkt ist nicht verfügbar
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BAV199LT1G BAV199LT1G ONSEMI BAV199LT1-D.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. load current: 0.45A
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SBAV199LT1G SBAV199LT1G ONSEMI bav199lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Kind of package: reel; tape
Max. forward impulse current: 2A
Application: automotive industry
Leakage current: 80nA
Capacitance: 2pF
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MUR120RLG MUR120RLG ONSEMI MUR120-DTE.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; bulk; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
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MUR120RLG MUR120RLG ONSEMI mur120-d.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR120G MUR120G ONSEMI mur120-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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BC556ABU BC556ABU ONSEMI BC556BTA-D.PDF FAIR-S-A0001412208-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...220
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Produkt ist nicht verfügbar
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1N5221B 1N5221B ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
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BZX84C2V4LT1G BZX84C2V4LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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FOD817A FOD817A ONSEMI FOD814ASD.pdf FOD817A.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Number of channels: 1
Mounting: THT
Case: DIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 3µs
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FOD817A3SD FOD817A3SD ONSEMI FOD817ASD.pdf FOD817A3SD.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
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FOD817AS FOD817AS ONSEMI fod814-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4
Number of channels: 1
Mounting: SMD
Case: PDIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
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FOD817ASD FOD817ASD ONSEMI FOD817ASD.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Number of channels: 1
Mounting: SMD
Case: SO4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
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FOD817A300W FOD817A300W ONSEMI FOD817A300W.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Number of channels: 1
Mounting: THT
Case: DIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 3µs
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FOD817A300 FOD817A300 ONSEMI FOD817A300.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Number of channels: 1
Mounting: THT
Case: DIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 3µs
Produkt ist nicht verfügbar
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FOD817A3S ONSEMI fod814-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Number of channels: 1
Mounting: SMD
Case: SMD4
Number of pins: 4
Collector-emitter voltage: 70V
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Collector current: 50mA
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LM285D-1.2R2G LM285D-1.2R2G ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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CAT24C128WI-GT3 CAT24C128WI-GT3 ONSEMI CAT24C128-D.PDF Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SO8
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NV24C128MUW3VTBG ONSEMI NV24C128MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C128YI-GT3 ONSEMI CAT24C128-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Clock frequency: 1MHz
Kind of interface: serial
Kind of package: reel; tape
Operating temperature: -40...85°C
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CAV24C128WE-GT3 ONSEMI CAV24C128-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C128YE-GT3 ONSEMI CAV24C128-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ESD7351HT1G ESD7351HT1G ONSEMI ESD7351-D.PDF Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1nA
Capacitance: 0.43...0.6pF
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SZESD7351HT1G SZESD7351HT1G ONSEMI esd7351-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; automotive industry
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1N5282TR ONSEMI 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
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MOC3051M MOC3051M ONSEMI MOC3052M.pdf MOC3051M.pdf Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Produkt ist nicht verfügbar
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MMSZ5235BT1G MMSZ5235BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
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1N5336BG 1N5336BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.3V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
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SBAV199LT3G SBAV199LT3G ONSEMI bav199lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Kind of package: reel; tape
Max. forward impulse current: 2A
Application: automotive industry
Leakage current: 80nA
Capacitance: 2pF
Produkt ist nicht verfügbar
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2SK2394-6-TB-E 2SK2394-6-TB-E ONSEMI 2SK2394-D.PDF Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MMBTA13 MMBTA13 ONSEMI MMBTA13.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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SMMBTA13LT1G SMMBTA13LT1G ONSEMI mmbta13lt1-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NV24C04MUW3VLTBG ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NV24C04DTVLT3G ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCX17LT1G description BCX1xLT1G.PDF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVBCX17LT1G bcx17lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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TL431CLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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BC850CLT1G BC846ALT1G.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BC850BLT1G BC846ALT1G.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVBC850CLT1G bc846alt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NSVBC850BLT1G bc846alt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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FJL6920TU FJL6920TU-dte.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 20A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 20A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Current gain: 5.5...8.5
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PZT3904T1G PZT3904T1G.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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MMBT6427LT1G MMBT6427LT1G.PDF
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBT6427LT1G mmbt6427lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MC74AC04DG MC74ACT04DR2G.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Kind of package: tube
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Technology: CMOS
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MC74ACT574DWG MC74ACT574DWR2G.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
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MC74AC02DG mc74ac02-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
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MC74AC05DG MC74AC05-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: open drain
Family: AC
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MC74ACT153DG MC74AC153-D.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 2
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Number of inputs: 7
Family: ACT
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MC74ACT14DG mc74ac14-d.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Family: ACT
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Number of inputs: 1
Kind of package: tube
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MC74ACT245DTG MC74AC245-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: tube
Technology: TTL
Family: ACT
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of output: 3-state
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MC74ACT574DWR2G MC74ACT574DWR2G.pdf
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; ACT; SMD; SO20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: ACT
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MC14584BDR2G MC14584B-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
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1N4737ATR 1N47xxA.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 7.5V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 7.5V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
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LM239DR2G description LM239DR2G.PDF
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; SMT; SO14
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: SO14
Operating voltage: 2...36V
Produkt ist nicht verfügbar
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LM239DTBR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Input offset voltage: 5mV
Input offset current: 5nA
Kind of package: reel; tape
Operating voltage: 3...36V
Operating temperature: -25...85°C
Input bias current: 25nA
Produkt ist nicht verfügbar
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1N4746A-T50A 1N47xxA.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
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6N135M 6N135M.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 20V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 7-50%@16mA
Case: DIP8
Turn-on time: 1.5µs
Turn-off time: 1.5µs
Manufacturer series: 6N135M
Collector-emitter voltage: 20V
Produkt ist nicht verfügbar
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TIP102G TIP102G.PDF
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Current gain: 20000
Produkt ist nicht verfügbar
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BAV199LT1G BAV199LT1-D.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3ns; SOT23; Ufmax: 1V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. load current: 0.45A
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SBAV199LT1G bav199lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Kind of package: reel; tape
Max. forward impulse current: 2A
Application: automotive industry
Leakage current: 80nA
Capacitance: 2pF
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MUR120RLG description MUR120-DTE.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; bulk; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
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MUR120RLG description mur120-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR120G mur120-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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BC556ABU BC556BTA-D.PDF FAIR-S-A0001412208-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...220
Mounting: THT
Kind of package: bulk
Frequency: 150MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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1N5221B 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; CASE017AG; single diode; bulk; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Kind of package: bulk
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BZX84C2V4LT1G BZX84B_BZX84C.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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FOD817A FOD814ASD.pdf FOD817A.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Number of channels: 1
Mounting: THT
Case: DIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 3µs
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FOD817A3SD FOD817ASD.pdf FOD817A3SD.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
auf Bestellung 13677 Stücke:
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FOD817AS fod814-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; PDIP4
Number of channels: 1
Mounting: SMD
Case: PDIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
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FOD817ASD FOD817ASD.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Number of channels: 1
Mounting: SMD
Case: SO4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
auf Bestellung 1921 Stücke:
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FOD817A300W FOD817A300W.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Number of channels: 1
Mounting: THT
Case: DIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 3µs
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FOD817A300 FOD817A300.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Number of channels: 1
Mounting: THT
Case: DIP4
Manufacturer series: FOD817
Collector-emitter voltage: 70V
CTR@If: 80-160%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 3µs
Produkt ist nicht verfügbar
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FOD817A3S fod814-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Number of channels: 1
Mounting: SMD
Case: SMD4
Number of pins: 4
Collector-emitter voltage: 70V
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Collector current: 50mA
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LM285D-1.2R2G LM285_LM385B.PDF
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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CAT24C128WI-GT3 CAT24C128-D.PDF
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SO8
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NV24C128MUW3VTBG NV24C128MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C128YI-GT3 CAT24C128-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.8÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: TSSOP8
Clock frequency: 1MHz
Kind of interface: serial
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CAV24C128WE-GT3 CAV24C128-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAV24C128YE-GT3 CAV24C128-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ESD7351HT1G ESD7351-D.PDF
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 5V; SOD323; reel,tape; 0.43÷0.6pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1nA
Capacitance: 0.43...0.6pF
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SZESD7351HT1G esd7351-d.pdf
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD323; automotive industry
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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1N5282TR 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; Ifsm: 4A; DO35; 4ns
Case: DO35
Mounting: THT
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Type of diode: switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. forward impulse current: 4A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
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MOC3051M MOC3052M.pdf MOC3051M.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Produkt ist nicht verfügbar
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MMSZ5235BT1G MMSZ52xxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 9168 Stücke:
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1N5336BG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.3V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.3V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
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SBAV199LT3G bav199lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.3W
Kind of package: reel; tape
Max. forward impulse current: 2A
Application: automotive industry
Leakage current: 80nA
Capacitance: 2pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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2SK2394-6-TB-E 2SK2394-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MMBTA13 MMBTA13.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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SMMBTA13LT1G mmbta13lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NV24C04MUW3VLTBG NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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NV24C04DTVLT3G NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Access time: 450ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CAT24C04WI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of package: reel; tape
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