| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| NRVB30H100MFST1G | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 0.3kA Kind of package: reel; tape Max. load current: 60A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB30H100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.9V Max. forward impulse current: 0.3kA Kind of package: reel; tape Max. load current: 60A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB8H100MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Load current: 8A Max. load current: 16A Max. forward impulse current: 75A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVB8H100MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape Mounting: SMD Load current: 8A Max. load current: 16A Max. forward impulse current: 75A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.9V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NRVTS30100MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape Mounting: SMD Load current: 30A Max. load current: 60A Max. forward impulse current: 350A Max. off-state voltage: 0.1kV Application: automotive industry Case: DFN5 Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.76V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MOC3163M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Case: DIP6 Output voltage: 600V Number of channels: 1 Mounting: THT Trigger current: 5mA Slew rate: 1kV/μs Insulation voltage: 4.17kV Manufacturer series: MOC3163M Kind of output: zero voltage crossing driver Type of optocoupler: optotriac |
auf Bestellung 1082 Stücke: Lieferzeit 14-21 Tag (e) |
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MB2S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM301ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape Type of integrated circuit: operational amplifier Number of channels: single; 1 Mounting: SMT Voltage supply range: ± 5...15V DC Case: SO8 Operating temperature: 0...70°C Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.25µA Slew rate: 10V/μs Input offset current: 50nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC14555BDG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3 Operating temperature: -55...125°C Technology: CMOS Kind of package: tube Mounting: SMD Case: SOIC16 Number of channels: 2 Supply voltage: 3...18V DC Number of inputs: 3 Family: HEF4000B Type of integrated circuit: digital Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer |
auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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| FSB50450US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Power dissipation: 14W Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSB50250AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W Operating temperature: -40...150°C Type of integrated circuit: driver Integrated circuit features: MOSFET Mounting: SMD DC supply current: 0.2mA Output current: 1.2A Operating voltage: 500V Power dissipation: 13.4W Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSB50250US | ONSEMI |
Category: Power switches - integrated circuits Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV Type of integrated circuit: driver Integrated circuit features: MOSFET Mounting: SMD Operating voltage: 500V Insulation voltage: 1.5kV Case: PowerSMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSB50450AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W Operating temperature: -40...150°C Type of integrated circuit: driver Integrated circuit features: MOSFET Mounting: SMD DC supply current: 0.2mA Output current: 1.5A Operating voltage: 500V Power dissipation: 14W Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSB50825AB | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV Operating temperature: -40...150°C Type of integrated circuit: driver Integrated circuit features: MOSFET Mounting: THT DC supply current: 0.2mA Output current: 3.6A Operating voltage: 250V Power dissipation: 14.2W Supply voltage: 150V Insulation voltage: 1.5kV Case: DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FSB50825AS | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W Operating temperature: -40...150°C Type of integrated circuit: driver Integrated circuit features: MOSFET Mounting: SMD DC supply current: 0.2mA Output current: 3.6A Operating voltage: 250V Power dissipation: 14.2W Supply voltage: 150V Insulation voltage: 1.5kV Case: Gull wing; PowerSMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDD6637 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Drain current: -55A Drain-source voltage: -35V Gate charge: 35nC On-state resistance: 19mΩ Gate-source voltage: ±25V Power dissipation: 57W Polarisation: unipolar |
auf Bestellung 2363 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZBZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 159nC Kind of package: tube Pulsed drain current: 162.5A Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NTLJS2103PTBG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6 Drain current: -7.7A Gate charge: 12.8nC On-state resistance: 25mΩ Power dissipation: 3.3W Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: WDFN6 Polarisation: unipolar Pulsed drain current: -24A Drain-source voltage: -12V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC14071BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: tube Case: SO14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC14071BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: reel; tape Case: SO14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Mounting: SMD Operating temperature: -55...125°C Number of channels: quad; 4 Kind of package: reel; tape Case: TSSOP14 Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Technology: CMOS Type of integrated circuit: digital Family: HEF4000B Kind of gate: OR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NLV14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74HC04ADR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA Type of integrated circuit: digital Family: HC Number of channels: 6 Kind of integrated circuit: inverter Kind of output: push-pull Mounting: SMD Operating temperature: -55...125°C Quiescent current: 2µA Number of inputs: 6 Technology: CMOS Supply voltage: 2...6V Case: SOIC14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape Mounting: SMD Case: TSOP6 Kind of package: reel; tape Number of channels: 2 Version: ESD Type of diode: TVS array Semiconductor structure: unidirectional |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| SNUP2114UCMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25040VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: SOIC8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25040VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TDFN8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CAT25040YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 4kb EEPROM Clock frequency: 20MHz Memory organisation: 512x8bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP59301DS30R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1 Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 3V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP59301DS28R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD Case: D2PAK-5 Mounting: SMD Manufacturer series: NCP59300 Operating temperature: -40...125°C Input voltage: 2.24...13.5V Output voltage: 2.8V Output current: 3A Voltage drop: 0.5V Tolerance: ±2.5% Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUZ11-NR4941 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: N Drain-source voltage: 50V Drain current: 30A Power dissipation: 75W Case: TO220 Gate-source voltage: 20V On-state resistance: 40mΩ Mounting: THT Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33067DWR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback Topology: flyback Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...85°C Output current: 0.3A Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33067PG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC Manufacturer series: MC Case: DIP16 Topology: flyback Mounting: THT Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Operating temperature: -40...85°C Output current: 1.5A Output voltage: 5...5.2V Input voltage: 20V Frequency: 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1SMB5924BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 9.1V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 9.1V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
auf Bestellung 2379 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5239BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 1131 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5239BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR8100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns Max. off-state voltage: 1kV Max. load current: 16A Load current: 8A Case: TO220AC Mounting: THT Kind of package: tube Max. forward impulse current: 100A Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 100ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.5V Features of semiconductor devices: ultrafast switching |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3660S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: PQFN8 On-state resistance: 11/2.6mΩ Mounting: SMD Gate charge: 29/87nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20/±12V |
auf Bestellung 2586 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS3664S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 11/4.5mΩ Mounting: SMD Gate charge: 29/52nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2937 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 104W Case: PQFN8 On-state resistance: 36mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±25V Technology: PowerTrench® |
auf Bestellung 2789 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8460 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Power dissipation: 104W Case: PQFN8 On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2418 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8333L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Pulsed drain current: 250A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86520L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Pulsed drain current: 60A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2927 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 36A Power dissipation: 104W Case: PQFN8 On-state resistance: 34mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 78W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS86300 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 122A Power dissipation: 104W Case: PQFN8 On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
FDMS5672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22A Power dissipation: 78W Case: PQFN8 On-state resistance: 18mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
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FDMS86104 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 73W Case: PQFN8 On-state resistance: 40mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
FDMS5352 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 49A Power dissipation: 104W Case: PQFN8 On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 131nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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|
FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FDMS7608S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 22/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 13.9/8.6mΩ Mounting: SMD Gate charge: 24/30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS86263P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -4.4A Pulsed drain current: -70A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±25V On-state resistance: 64mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS3604S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/40A Pulsed drain current: 40...100A Power dissipation: 2.2/2.5W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 10.8/4mΩ Mounting: SMD Gate charge: 29/66nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS1D2N03DSD | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20/±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS86500L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 799A Power dissipation: 104W Case: PQFN8 On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 165nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16.5A Power dissipation: 31W Case: PQFN8 On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDMS86350 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 130A Power dissipation: 156W Case: PQFN8 On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NRVB30H100MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB30H100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB8H100MFSWFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVB8H100MFSWFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVTS30100MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3163M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Trigger current: 5mA
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3163M
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Trigger current: 5mA
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3163M
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 117+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 133+ | 0.54 EUR |
| 139+ | 0.52 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.41 EUR |
| MB2S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| LM301ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Slew rate: 10V/μs
Input offset current: 50nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Slew rate: 10V/μs
Input offset current: 50nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14555BDG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Mounting: SMD
Case: SOIC16
Number of channels: 2
Supply voltage: 3...18V DC
Number of inputs: 3
Family: HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Technology: CMOS
Kind of package: tube
Mounting: SMD
Case: SOIC16
Number of channels: 2
Supply voltage: 3...18V DC
Number of inputs: 3
Family: HEF4000B
Type of integrated circuit: digital
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| FSB50450US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50250AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50250US |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Case: PowerSMD
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
Case: PowerSMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50450AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50825AB |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: THT
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: DIP
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: THT
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50825AS |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 3.6A
Operating voltage: 250V
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDD6637 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
auf Bestellung 2363 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 2.2 EUR |
| 42+ | 1.73 EUR |
| 47+ | 1.53 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.07 EUR |
| SZBZX84C10LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL040N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJS2103PTBG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14071BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14071BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14071BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NLV14071BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC04ADR2G-Q |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Number of channels: 2
Version: ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Case: TSOP6
Kind of package: reel; tape
Number of channels: 2
Version: ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 2.97 EUR |
| SNUP2114UCMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25040VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25040VP2I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25040YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP59301DS30R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP59301DS28R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 55+ | 1.3 EUR |
| 64+ | 1.12 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.73 EUR |
| BUZ11-NR4941 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33067DWR2G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Category: Power switches - integrated circuits
Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33067PG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Manufacturer series: MC
Case: DIP16
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Operating temperature: -40...85°C
Output current: 1.5A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Manufacturer series: MC
Case: DIP16
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Operating temperature: -40...85°C
Output current: 1.5A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5924BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 226+ | 0.32 EUR |
| 249+ | 0.29 EUR |
| 332+ | 0.22 EUR |
| 376+ | 0.19 EUR |
| 455+ | 0.16 EUR |
| 511+ | 0.14 EUR |
| MMSZ5239BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 1131 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 782+ | 0.092 EUR |
| 1131+ | 0.063 EUR |
| 1N5239BTR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
auf Bestellung 4400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 1163+ | 0.061 EUR |
| 1894+ | 0.038 EUR |
| 2591+ | 0.028 EUR |
| 2907+ | 0.025 EUR |
| MUR8100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Max. off-state voltage: 1kV
Max. load current: 16A
Load current: 8A
Case: TO220AC
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 100ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.5V
Features of semiconductor devices: ultrafast switching
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 52+ | 1.39 EUR |
| 60+ | 1.2 EUR |
| FDMS3660S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
auf Bestellung 2586 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 46+ | 1.59 EUR |
| 50+ | 1.44 EUR |
| FDMS3664S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 11/4.5mΩ
Mounting: SMD
Gate charge: 29/52nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2937 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 1.43 EUR |
| 61+ | 1.19 EUR |
| 68+ | 1.06 EUR |
| 100+ | 0.9 EUR |
| FDMS86163P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±25V
Technology: PowerTrench®
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.75 EUR |
| 27+ | 2.73 EUR |
| 29+ | 2.49 EUR |
| 33+ | 2.23 EUR |
| 50+ | 2.04 EUR |
| 100+ | 1.97 EUR |
| FDMS8460 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.73 EUR |
| 32+ | 2.26 EUR |
| 37+ | 1.97 EUR |
| 40+ | 1.83 EUR |
| FDMS86252L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2418 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 3.22 EUR |
| 28+ | 2.57 EUR |
| 32+ | 2.26 EUR |
| 50+ | 1.69 EUR |
| 100+ | 1.5 EUR |
| 250+ | 1.42 EUR |
| FDMS8333L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2993 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 500+ | 0.61 EUR |
| FDMS86520L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2927 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 37+ | 1.97 EUR |
| 41+ | 1.76 EUR |
| 48+ | 1.5 EUR |
| 100+ | 1.37 EUR |
| FDMS86200 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS2572 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86300 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS5672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86104 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS5352 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86200DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7608S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86263P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3604S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS1D2N03DSD |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20/±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20/±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86500L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8622 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86350 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH