| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NLAS3157MX3TCG | ONSEMI |
 Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
Produkt ist nicht verfügbar |
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ESD9L3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.5...0.9pF |
auf Bestellung 7230 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS38 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 80V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
Produkt ist nicht verfügbar |
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NTZD5110NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Mounting: SMD Case: SOT563F Drain current: 0.225A Power dissipation: 0.28W On-state resistance: 1.6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 5.5A Kind of package: reel; tape Application: automotive industry |
auf Bestellung 5988 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM130LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO216AA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.38V Max. forward impulse current: 50A Kind of package: reel; tape Max. load current: 2A |
auf Bestellung 1587 Stücke: Lieferzeit 14-21 Tag (e) |
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| MBRM120LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO216AA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 50A Kind of package: reel; tape Max. load current: 2A |
Produkt ist nicht verfügbar |
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NTHL041N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 108nC |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD1N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQU1N60CTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 4A Gate charge: 6.2nC |
Produkt ist nicht verfügbar |
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| FCH041N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 231A Gate charge: 285nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCH041N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCH041N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMT061N60S5F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 41A Power dissipation: 255W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 61mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 146A Gate charge: 76nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DTC123EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
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| DTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC123EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSBC123EPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVDTC123EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Application: automotive industry Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
auf Bestellung 1348 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2902N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV Type of integrated circuit: operational amplifier Number of channels: quad; 4 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP14 Input offset voltage: 10mV Kind of package: tube Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCP302045MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: MOSFET half-bridge Case: PQFN31 5X5 Mounting: SMD Pulse fall time: 6ns Impulse rise time: 12ns Output current: 45A |
Produkt ist nicht verfügbar |
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FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 5V Output voltage: 0...35V Slew rate: 50kV/μs |
auf Bestellung 319 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD7181MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape Case: X3DFN2 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 18.5V Breakdown voltage: 20.5...35V Semiconductor structure: bidirectional Type of diode: TVS |
Produkt ist nicht verfügbar |
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FDB070AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK Mounting: SMD Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 66nC On-state resistance: 15mΩ Gate-source voltage: ±20V Drain current: 80A Drain-source voltage: 60V Power dissipation: 175W |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV8460ADR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8 Supply voltage: 6...36V DC Application: automotive industry Kind of output: N-Channel Kind of integrated circuit: high-side Kind of package: reel; tape Mounting: SMD Type of integrated circuit: power switch Case: SO8 On-state resistance: 0.4Ω Number of channels: 1 Output current: 3A |
Produkt ist nicht verfügbar |
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FDC637BNZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.2A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1607BDR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
Produkt ist nicht verfügbar |
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| FAN9673Q | ONSEMI |
Category: Integrated circuits - others Description: IC: PMIC; PFC controller; LQFP32; 15V Type of integrated circuit: PMIC Mounting: SMD Supply voltage: 15V Case: LQFP32 Kind of integrated circuit: PFC controller |
Produkt ist nicht verfügbar |
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NC7SZ11P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 3 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
auf Bestellung 6265 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP032N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 235A Pulsed drain current: 940A Power dissipation: 375W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: THT Gate charge: 169nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDP032N08B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 211A Pulsed drain current: 844A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NCV8752BMX18TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Output voltage: 1.8V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8752AMX18TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Output voltage: 1.8V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCV8752AMX28TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Output voltage: 2.8V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8752ASN30T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Output current: 0.2A Output voltage: 3V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCV8752BMX28TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Output voltage: 2.8V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCV8752BMX33TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN6 Output current: 0.2A Output voltage: 3.3V Number of channels: 1 |
Produkt ist nicht verfügbar |
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| NCV8752BSN28T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Output current: 0.2A Output voltage: 2.8V Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8752BSN30T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: TSOP5 Output current: 0.2A Output voltage: 3V Number of channels: 1 |
Produkt ist nicht verfügbar |
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SMMUN2114LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
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MBRD650CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. load current: 6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 2SB1215S-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK Polarisation: bipolar Type of transistor: PNP Power dissipation: 1W Case: DPAK Collector current: 3A Collector-emitter voltage: 100V Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FODM121A | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Mounting: SMD Manufacturer series: FODM121 Case: Mini-flat 4pin Type of optocoupler: optocoupler Kind of output: transistor Turn-off time: 3µs Turn-on time: 3µs Number of channels: 1 Collector-emitter voltage: 80V CTR@If: 100-300%@5mA Insulation voltage: 3.75kV |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCB125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FCP125N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FCP125N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTP125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVB125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCPF125N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FCMT125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTHL125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTPF125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVHL025N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 300A Power dissipation: 595W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
|
FDB28N30TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 28A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.129Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 50nC |
auf Bestellung 698 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
FDA38N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 22A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 60nC Pulsed drain current: 150A |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NLAS3157MX3TCG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD9L3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.5...0.9pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.5...0.9pF
auf Bestellung 7230 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 253+ | 0.28 EUR |
| 300+ | 0.24 EUR |
| 569+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| SS38 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTZD5110NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 421+ | 0.17 EUR |
| 569+ | 0.13 EUR |
| 685+ | 0.1 EUR |
| 1000+ | 0.097 EUR |
| NRVB0530T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 5988 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 521+ | 0.14 EUR |
| 596+ | 0.12 EUR |
| MBRM130LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 167+ | 0.43 EUR |
| 185+ | 0.39 EUR |
| 272+ | 0.26 EUR |
| 327+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| MBRM120LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL041N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.35 EUR |
| FQD1N60CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU1N60CTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH041N60F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT061N60S5F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 146A
Gate charge: 76nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 146A
Gate charge: 76nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123EPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC123EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
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| MBRS190T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 180+ | 0.4 EUR |
| 196+ | 0.37 EUR |
| 236+ | 0.3 EUR |
| 258+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| LM2902N |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
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| NCP302045MNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
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| FOD3150 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 57+ | 1.26 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.06 EUR |
| ESD7181MUT5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
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| FDB070AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 25+ | 2.96 EUR |
| 27+ | 2.67 EUR |
| 28+ | 2.57 EUR |
| NCV8460ADR2G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDC637BNZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 162+ | 0.44 EUR |
| 190+ | 0.38 EUR |
| 325+ | 0.22 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| NCP1607BDR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
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| FAN9673Q |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Produkt ist nicht verfügbar
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| NC7SZ11P6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 6265 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 338+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 439+ | 0.16 EUR |
| 521+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| 625+ | 0.11 EUR |
| 3000+ | 0.1 EUR |
| FDP032N08 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
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| FDP032N08B-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NCV8752BMX18TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8752AMX18TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
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| NCV8752AMX28TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
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| NCV8752ASN30T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8752BMX28TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
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| NCV8752BMX33TCG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV8752BSN28T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8752BSN30T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Produkt ist nicht verfügbar
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| SMMUN2114LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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| MBRD650CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| 2SB1215S-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Polarisation: bipolar
Type of transistor: PNP
Power dissipation: 1W
Case: DPAK
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Polarisation: bipolar
Type of transistor: PNP
Power dissipation: 1W
Case: DPAK
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| FODM121A |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 204+ | 0.35 EUR |
| 227+ | 0.32 EUR |
| FCB125N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH125N65S3R0-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP125N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP125N65S3R0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP125N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB125N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF125N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCMT125N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL125N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF125N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL025N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB28N30TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
auf Bestellung 698 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.95 EUR |
| 32+ | 2.29 EUR |
| 40+ | 1.8 EUR |
| 44+ | 1.64 EUR |
| 100+ | 1.49 EUR |
| FDA38N30 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.75 EUR |
| 22+ | 3.39 EUR |
| 23+ | 3.15 EUR |