Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (140277) > Seite 2338 nach 2338

Wählen Sie Seite:    << Vorherige Seite ]  1 233 466 699 932 1165 1398 1631 1864 2097 2330 2333 2334 2335 2336 2337 2338
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NLAS3157MX3TCG ONSEMI NLAS3157-D.PDF Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD9L3.3ST5G ESD9L3.3ST5G ONSEMI esd9l-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.5...0.9pF
auf Bestellung 7230 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
253+0.28 EUR
300+0.24 EUR
569+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
SS38 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTZD5110NT1G NTZD5110NT1G ONSEMI ntzd5110n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
421+0.17 EUR
569+0.13 EUR
685+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
NRVB0530T1G NRVB0530T1G ONSEMI mbr0530t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 5988 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
521+0.14 EUR
596+0.12 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MBRM130LT1G MBRM130LT1G ONSEMI mbrm130l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
167+0.43 EUR
185+0.39 EUR
272+0.26 EUR
327+0.22 EUR
500+0.16 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
MBRM120LT3G ONSEMI mbrm120l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHL041N60S5H NTHL041N60S5H ONSEMI NTHL041N60S5H.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N60CTM ONSEMI fqu1n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQU1N60CTU ONSEMI fqu1n60c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N60E ONSEMI FCH041N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N60F ONSEMI fch041n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N60F-F085 ONSEMI fch041n60f_f085-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMT061N60S5F ONSEMI ntmt061n60s5f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 146A
Gate charge: 76nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTC123EET1G ONSEMI dtc123e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTC123EM3T5G ONSEMI dtc123e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123EDXV6T1G ONSEMI dtc123ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123EPDXV6T1G ONSEMI dtc113ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTC123EM3T5G ONSEMI dtc123e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRS190T3G MBRS190T3G ONSEMI MBRS190T3G-DTE.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
180+0.4 EUR
196+0.37 EUR
236+0.3 EUR
258+0.28 EUR
500+0.21 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
LM2902N LM2902N ONSEMI LM2902.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP302045MNTWG ONSEMI ncp302045-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD3150 FOD3150 ONSEMI FOD3150.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
ESD7181MUT5G ONSEMI esd7181mu-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB070AN06A0 FDB070AN06A0 ONSEMI FDB070AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
25+2.96 EUR
27+2.67 EUR
28+2.57 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
NCV8460ADR2G NCV8460ADR2G ONSEMI ncv8460-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC637BNZ FDC637BNZ ONSEMI FDC637BNZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
162+0.44 EUR
190+0.38 EUR
325+0.22 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
NCP1607BDR2G NCP1607BDR2G ONSEMI ncp1607-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN9673Q ONSEMI fan9673-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ11P6X NC7SZ11P6X ONSEMI NC7SZ11P6X.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 6265 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
338+0.21 EUR
385+0.19 EUR
439+0.16 EUR
521+0.14 EUR
582+0.12 EUR
625+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08 ONSEMI fdp032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08B-F102 ONSEMI fdp032n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BMX18TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752AMX18TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752AMX28TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752ASN30T1G ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BMX28TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BMX33TCG ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BSN28T1G ONSEMI ncv8752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BSN30T1G ONSEMI NCV8752-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMUN2114LT1G SMMUN2114LT1G ONSEMI dta114y-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRD650CTT4G MBRD650CTT4G ONSEMI MBRD650CTG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SB1215S-TL-E ONSEMI en2539-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Polarisation: bipolar
Type of transistor: PNP
Power dissipation: 1W
Case: DPAK
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FODM121A FODM121A ONSEMI FODM121A.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
204+0.35 EUR
227+0.32 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3R0 ONSEMI fcp125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTP125N65S3H ONSEMI ntp125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 ONSEMI nvb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF125N65S3 ONSEMI fcpf125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT125N65S3 ONSEMI fcmt125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHL125N65S3H ONSEMI nthl125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVHL025N65S3 ONSEMI nvhl025n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB28N30TM FDB28N30TM ONSEMI FDB28N30TM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
auf Bestellung 698 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.95 EUR
32+2.29 EUR
40+1.8 EUR
44+1.64 EUR
100+1.49 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
FDA38N30 FDA38N30 ONSEMI fda38n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
22+3.39 EUR
23+3.15 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NLAS3157MX3TCG NLAS3157-D.PDF
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD9L3.3ST5G esd9l-d.pdf
ESD9L3.3ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 4.8V; SOD923; reel,tape; 0.5÷0.9pF
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.5...0.9pF
auf Bestellung 7230 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
300+0.24 EUR
569+0.13 EUR
596+0.12 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
SS38 SS32_SS39.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 80V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 80V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTZD5110NT1G ntzd5110n-d.pdf
NTZD5110NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563F
Drain current: 0.225A
Power dissipation: 0.28W
On-state resistance: 1.6Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
421+0.17 EUR
569+0.13 EUR
685+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
NRVB0530T1G mbr0530t1-d.pdf
NRVB0530T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 5988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
521+0.14 EUR
596+0.12 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
MBRM130LT1G mbrm130l-d.pdf
MBRM130LT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.38V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
auf Bestellung 1587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
167+0.43 EUR
185+0.39 EUR
272+0.26 EUR
327+0.22 EUR
500+0.16 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
MBRM120LT3G mbrm120l-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Max. load current: 2A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHL041N60S5H NTHL041N60S5H.PDF
NTHL041N60S5H
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 108nC
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N60CTM fqu1n60c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQU1N60CTU fqu1n60c-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 4A
Gate charge: 6.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N60E FCH041N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N60F fch041n60f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH041N60F-F085 fch041n60f_f085-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMT061N60S5F ntmt061n60s5f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 146A
Gate charge: 76nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTC123EET1G dtc123e-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DTC123EM3T5G dtc123e-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123EDXV6T1G dtc123ed-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC123EPDXV6T1G dtc113ep-d.pdf
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTC123EM3T5G dtc123e-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Application: automotive industry
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRS190T3G MBRS190T3G-DTE.PDF
MBRS190T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
180+0.4 EUR
196+0.37 EUR
236+0.3 EUR
258+0.28 EUR
500+0.21 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
LM2902N LM2902.pdf
LM2902N
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; DIP14; 10mV
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP14
Input offset voltage: 10mV
Kind of package: tube
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP302045MNTWG ncp302045-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: MOSFET half-bridge
Case: PQFN31 5X5
Mounting: SMD
Pulse fall time: 6ns
Impulse rise time: 12ns
Output current: 45A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD3150 FOD3150.pdf
FOD3150
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
auf Bestellung 319 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
60+1.2 EUR
100+1.06 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
ESD7181MUT5G esd7181mu-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 20.5÷35V; bidirectional; X3DFN2; reel,tape
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 18.5V
Breakdown voltage: 20.5...35V
Semiconductor structure: bidirectional
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB070AN06A0 FDB070AN06A0.pdf
FDB070AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Drain current: 80A
Drain-source voltage: 60V
Power dissipation: 175W
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
25+2.96 EUR
27+2.67 EUR
28+2.57 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
NCV8460ADR2G ncv8460-d.pdf
NCV8460ADR2G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; SO8
Supply voltage: 6...36V DC
Application: automotive industry
Kind of output: N-Channel
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: power switch
Case: SO8
On-state resistance: 0.4Ω
Number of channels: 1
Output current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC637BNZ FDC637BNZ.pdf
FDC637BNZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.2A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
162+0.44 EUR
190+0.38 EUR
325+0.22 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
NCP1607BDR2G ncp1607-d.pdf
NCP1607BDR2G
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN9673Q fan9673-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; LQFP32; 15V
Type of integrated circuit: PMIC
Mounting: SMD
Supply voltage: 15V
Case: LQFP32
Kind of integrated circuit: PFC controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ11P6X NC7SZ11P6X.pdf
NC7SZ11P6X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; SMD; SC88A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
auf Bestellung 6265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
338+0.21 EUR
385+0.19 EUR
439+0.16 EUR
521+0.14 EUR
582+0.12 EUR
625+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08 fdp032n08-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 235A; Idm: 940A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 235A
Pulsed drain current: 940A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 169nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP032N08B-F102 fdp032n08b-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 211A; Idm: 844A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 211A
Pulsed drain current: 844A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 111nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BMX18TCG ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752AMX18TCG ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 1.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752AMX28TCG ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752ASN30T1G ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BMX28TCG ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BMX33TCG ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; XDFN6; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN6
Output current: 0.2A
Output voltage: 3.3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BSN28T1G ncv8752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.2A; TSOP5; SMD
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 2.8V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV8752BSN30T1G NCV8752-D.PDF
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; TSOP5; SMD; Ch: 1
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: TSOP5
Output current: 0.2A
Output voltage: 3V
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMUN2114LT1G dta114y-d.pdf
SMMUN2114LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRD650CTT4G MBRD650CTG.PDF
MBRD650CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SB1215S-TL-E en2539-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 1W; DPAK
Polarisation: bipolar
Type of transistor: PNP
Power dissipation: 1W
Case: DPAK
Collector current: 3A
Collector-emitter voltage: 100V
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FODM121A FODM121A.pdf
FODM121A
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Manufacturer series: FODM121
Case: Mini-flat 4pin
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-off time: 3µs
Turn-on time: 3µs
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100-300%@5mA
Insulation voltage: 3.75kV
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
204+0.35 EUR
227+0.32 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
FCB125N65S3 fcb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3 fcp125n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCP125N65S3R0 fcp125n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTP125N65S3H ntp125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVB125N65S3 nvb125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCPF125N65S3 fcpf125n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT125N65S3 fcmt125n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHL125N65S3H nthl125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTPF125N65S3H ntpf125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVHL025N65S3 nvhl025n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB28N30TM FDB28N30TM.pdf
FDB28N30TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 50nC
auf Bestellung 698 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
32+2.29 EUR
40+1.8 EUR
44+1.64 EUR
100+1.49 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
FDA38N30 fda38n30-d.pdf
FDA38N30
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Pulsed drain current: 150A
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
22+3.39 EUR
23+3.15 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:    << Vorherige Seite ]  1 233 466 699 932 1165 1398 1631 1864 2097 2330 2333 2334 2335 2336 2337 2338