| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SMUN5312DW1T1G | ONSEMI |
 Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.25W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5311DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5311DW1T3G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.25W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5313DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5313DW1T3G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMUN5315DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 10kΩ Power dissipation: 0.385W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSVMUN531335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 80...140 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 2.2/47kΩ Power dissipation: 0.385W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSVMUN5312DW1T2G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 60...100 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.385W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NSVMUN5316DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Kind of transistor: BRT; complementary pair Application: automotive industry Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.385W Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX85C10 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 10V; DO41; single diode; bulk; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: bulk |
auf Bestellung 1196 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C10-T50R | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 10V; DO41; single diode; reel,tape; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTH4L040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W Mounting: THT Power dissipation: 160W Gate charge: 106nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 41A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -15...25V Kind of package: tube Case: TO247-4 On-state resistance: 56mΩ Pulsed drain current: 232A |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575T-5G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube Output voltage: 5V DC Number of channels: 1 Frequency: 42...63kHz Topology: buck Input voltage: 4.75...40V DC Output current: 1A Operating temperature: -40...125°C |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575D2T-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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DF08S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Kind of package: reel; tape Electrical mounting: SMT |
auf Bestellung 3478 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSV9435T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Application: automotive industry Kind of transistor: BRT Kind of package: reel; tape Mounting: SMD Type of transistor: PNP Case: SOT223 Collector-emitter voltage: 300mV Power dissipation: 0.72W Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTA123EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTA123EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| DTA123JET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 80...140 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDD5N50NZTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4A Pulsed drain current: 16A Power dissipation: 62W Case: DPAK Gate-source voltage: ±25V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FQU5N50CTU-WS | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDH45N50F-F133 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Pulsed drain current: 180A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF5N50CYDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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LM2574N-5G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
auf Bestellung 1249 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2574N-12G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; DIP8; THT; tube Mounting: THT Type of integrated circuit: PMIC Kind of package: tube Case: DIP8 Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD137G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Mounting: THT Frequency: 50MHz Power dissipation: 12W Kind of package: bulk |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX79C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; CASE017AG; single diode; bulk; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: BZX79C |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 120A On-state resistance: 68mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: Kelvin terminal Pulsed drain current: 120A On-state resistance: 68mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVBG075N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 37A Power dissipation: 139W Case: D2PAK-7 Gate-source voltage: -8...22V Mounting: SMD Gate charge: 59nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH040F120MNF1PG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH040F120MNF1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NXH040P120MNF1PG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MMBF5485 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 4mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 2398 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS35 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape Mounting: SMD Max. off-state voltage: 50V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 1SS351-TB-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape Mounting: SMD Max. off-state voltage: 5V Load current: 30mA Kind of package: reel; tape Semiconductor structure: double series Case: SC59 Capacitance: 0.9pF Type of diode: Schottky switching Max. forward voltage: 0.23V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Peak pulse power dissipation: 0.5kW Application: automotive industry; USB Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 4 Breakdown voltage: 6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SZNSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: unidirectional Case: TSOP6 Type of diode: TVS array Number of channels: 4 Breakdown voltage: 6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SZESD5Z3.3T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD523; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC132M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Quiescent current: 20µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: tube Case: SO14 Family: HC Number of channels: quad; 4 |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC132MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: tube Case: TSSOP14 Family: HC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC132MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: HC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MM74HC132MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 2...6V DC Kind of gate: NAND Operating temperature: -40...85°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: HC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MJE340G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Collector current: 0.5A Mounting: THT Collector-emitter voltage: 300V Power dissipation: 20W Polarisation: bipolar Type of transistor: NPN Current gain: 30...240 Kind of package: bulk Case: TO225 |
auf Bestellung 1131 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE350G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Current gain: 30...240 Mounting: THT Kind of package: bulk |
auf Bestellung 809 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC02MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Kind of gate: NOR Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: VHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC02M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Kind of gate: NOR Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Kind of package: tube Case: SO14 Family: VHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC02MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Kind of gate: NOR Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: VHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FGH40T120SQDNL4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 227W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 221nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC33151VDR2G | ONSEMI |
Category: Gates, inverters Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: -1.5...1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...150°C Impulse rise time: 14ns Pulse fall time: 16ns Maximum output current: 1.5A Supply voltage: 6.5...18V Power dissipation: 1W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74VHC273MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2...5.5V DC Trigger: positive-edge-triggered |
auf Bestellung 1718 Stücke: Lieferzeit 14-21 Tag (e) |
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| MM74HC126MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14WB Family: HC Kind of integrated circuit: 3-state; buffer Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MM74HC126MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: HC Kind of output: 3-state Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Case: SOIC14 Family: HC Kind of integrated circuit: 3-state; buffer Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74VHC1G135DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74VHC1GT125DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCP5310MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCP5316MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BCP53MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SMUN5312DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5311DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5311DW1T3G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5313DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5313DW1T3G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5315DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 10kΩ
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN531335DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2/47kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 80...140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 2.2/47kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5312DW1T2G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5316DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Kind of transistor: BRT; complementary pair
Application: automotive industry
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.385W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C10 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: bulk
auf Bestellung 1196 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 521+ | 0.17 EUR |
| 610+ | 0.14 EUR |
| 1196+ | 0.071 EUR |
| BZX85C10-T50R |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Mounting: THT
Power dissipation: 160W
Gate charge: 106nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
On-state resistance: 56mΩ
Pulsed drain current: 232A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Mounting: THT
Power dissipation: 160W
Gate charge: 106nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -15...25V
Kind of package: tube
Case: TO247-4
On-state resistance: 56mΩ
Pulsed drain current: 232A
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 25.53 EUR |
| LM2575T-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Output voltage: 5V DC
Number of channels: 1
Frequency: 42...63kHz
Topology: buck
Input voltage: 4.75...40V DC
Output current: 1A
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Output voltage: 5V DC
Number of channels: 1
Frequency: 42...63kHz
Topology: buck
Input voltage: 4.75...40V DC
Output current: 1A
Operating temperature: -40...125°C
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.82 EUR |
| 40+ | 2.13 EUR |
| LM2575T-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.3 EUR |
| 41+ | 2.09 EUR |
| LM2575D2T-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 2.57 EUR |
| 38+ | 2.25 EUR |
| DF08S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Kind of package: reel; tape
Electrical mounting: SMT
auf Bestellung 3478 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 68+ | 1.26 EUR |
| 107+ | 0.8 EUR |
| 140+ | 0.61 EUR |
| 158+ | 0.54 EUR |
| 200+ | 0.48 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| NSV9435T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Application: automotive industry
Kind of transistor: BRT
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 300mV
Power dissipation: 0.72W
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Application: automotive industry
Kind of transistor: BRT
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector-emitter voltage: 300mV
Power dissipation: 0.72W
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA123JET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD5N50NZTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FQU5N50CTU-WS |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDH45N50F-F133 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 9.42 EUR |
| 12+ | 7.72 EUR |
| 13+ | 6.88 EUR |
| 30+ | 6.38 EUR |
| FQPF5N50CYDTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2574N-5G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 1249 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.13 EUR |
| 55+ | 1.57 EUR |
| 64+ | 1.34 EUR |
| 100+ | 1.3 EUR |
| 250+ | 1.21 EUR |
| 500+ | 1.18 EUR |
| LM2574N-ADJG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 72+ | 1.19 EUR |
| 75+ | 1.14 EUR |
| 100+ | 1.09 EUR |
| 250+ | 1.06 EUR |
| LM2574N-12G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Mounting: THT
Type of integrated circuit: PMIC
Kind of package: tube
Case: DIP8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Mounting: THT
Type of integrated circuit: PMIC
Kind of package: tube
Case: DIP8
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD137G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
auf Bestellung 983 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 1.38 EUR |
| 125+ | 0.68 EUR |
| 171+ | 0.5 EUR |
| BZX79C5V6 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; CASE017AG; single diode; bulk; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; CASE017AG; single diode; bulk; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX79C
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 482+ | 0.17 EUR |
| NTHL075N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L075N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG075N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 12.61 EUR |
| NXH040F120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NXH040F120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NXH040P120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBF5485 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 463+ | 0.18 EUR |
| 516+ | 0.17 EUR |
| 544+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| SS35 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SS351-TB-E |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Kind of package: reel; tape
Semiconductor structure: double series
Case: SC59
Capacitance: 0.9pF
Type of diode: Schottky switching
Max. forward voltage: 0.23V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Kind of package: reel; tape
Semiconductor structure: double series
Case: SC59
Capacitance: 0.9pF
Type of diode: Schottky switching
Max. forward voltage: 0.23V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSP4201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNSP4201MR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: TSOP6
Type of diode: TVS array
Number of channels: 4
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD5Z3.3T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MM74HC132M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: HC
Number of channels: quad; 4
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 1.59 EUR |
| MM74HC132MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: tube
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: HC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC132MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: HC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 2...6V DC
Kind of gate: NAND
Operating temperature: -40...85°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: HC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MJE340G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Collector current: 0.5A
Mounting: THT
Collector-emitter voltage: 300V
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 30...240
Kind of package: bulk
Case: TO225
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Collector current: 0.5A
Mounting: THT
Collector-emitter voltage: 300V
Power dissipation: 20W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 30...240
Kind of package: bulk
Case: TO225
auf Bestellung 1131 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 115+ | 0.74 EUR |
| 178+ | 0.48 EUR |
| 200+ | 0.43 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.36 EUR |
| MJE350G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 1.59 EUR |
| 82+ | 1.05 EUR |
| 93+ | 0.92 EUR |
| 124+ | 0.69 EUR |
| 200+ | 0.62 EUR |
| 500+ | 0.57 EUR |
| 74VHC02MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: NOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: VHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: NOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: VHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC02M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: NOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: VHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: NOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: tube
Case: SO14
Family: VHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC02MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: NOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: VHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: NOR
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: VHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGH40T120SQDNL4 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33151VDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Power dissipation: 1W
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Power dissipation: 1W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC273MTCX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Trigger: positive-edge-triggered
auf Bestellung 1718 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 127+ | 0.67 EUR |
| 142+ | 0.61 EUR |
| 152+ | 0.56 EUR |
| MM74HC126MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14WB
Family: HC
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14WB
Family: HC
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC126MX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: SOIC14
Family: HC
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of output: 3-state
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: SOIC14
Family: HC
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC1G135DBVT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC1GT125DFT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCP5310MTWG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP5316MTWG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP53MTWG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH