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SZMMSZ5248ET1G ONSEMI MMSZ52xxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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SZMMSZ5248BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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RS1J RS1J ONSEMI RS1x.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
323+0.22 EUR
410+0.17 EUR
486+0.14 EUR
Mindestbestellmenge: 228
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RS1JFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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RS1JFP ONSEMI rs1mfp-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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NRVHPRS1JFA NRVHPRS1JFA ONSEMI rs1afa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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KSD880YTU ONSEMI KSD880.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
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FGH40T120SMD FGH40T120SMD ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 188 Stücke:
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8+10.07 EUR
10+8.65 EUR
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FGY60T120SQDN FGY60T120SQDN ONSEMI fgy60t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
auf Bestellung 7 Stücke:
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6+12.1 EUR
7+11.53 EUR
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FGY75T120SQDN FGY75T120SQDN ONSEMI fgy75t120sqdn-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
auf Bestellung 33 Stücke:
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6+11.95 EUR
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FGH40T120SMD-F155 FGH40T120SMD-F155 ONSEMI FGH40T120SMD.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 12 Stücke:
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6+13.8 EUR
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NXH400N100H4Q2F2PG ONSEMI nxh400n100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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NXH450B100H4Q2F2PG ONSEMI nxh450b100h4q2f2-d.pdf Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
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FQPF3N80C FQPF3N80C ONSEMI FQPF3N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Gate charge: 16.5nC
Power dissipation: 39W
auf Bestellung 58 Stücke:
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36+2.02 EUR
52+1.4 EUR
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FQP3N80C FQP3N80C ONSEMI FAIRS47784-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Power dissipation: 107W
Pulsed drain current: 12A
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SBC847BWT1G SBC847BWT1G ONSEMI BC84x.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 8120 Stücke:
Lieferzeit 14-21 Tag (e)
1250+0.057 EUR
1516+0.047 EUR
2193+0.033 EUR
2565+0.028 EUR
3677+0.019 EUR
4133+0.017 EUR
5051+0.014 EUR
Mindestbestellmenge: 1250
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NSVBC847BTT1G ONSEMI bc847att1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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NTMFS5C604NLT1G NTMFS5C604NLT1G ONSEMI ntmfs5c604nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 100W
Drain current: 203A
Case: DFN5x6
Kind of channel: enhancement
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.45 EUR
33+2.23 EUR
100+1.59 EUR
500+1.44 EUR
Mindestbestellmenge: 21
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2SB1201S-TL-E ONSEMI 2sb1201-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
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MC14027BDR2G MC14027BDR2G ONSEMI mc14027b-d.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Trigger: negative-edge-triggered
auf Bestellung 2298 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
154+0.47 EUR
171+0.42 EUR
197+0.36 EUR
216+0.33 EUR
234+0.31 EUR
250+0.29 EUR
256+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 125
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NVLJWS022N06CLTAG ONSEMI nvljws022n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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KSA1013YTA KSA1013YTA ONSEMI KSA1013.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
auf Bestellung 1791 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
171+0.42 EUR
295+0.24 EUR
353+0.2 EUR
Mindestbestellmenge: 105
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KSA1013YBU KSA1013YBU ONSEMI KSA1013.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
auf Bestellung 5904 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
142+0.51 EUR
232+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 97
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FDD4685 FDD4685 ONSEMI FDD4685.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -32A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 893 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
66+1.09 EUR
79+0.92 EUR
80+0.9 EUR
Mindestbestellmenge: 55
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FDMA910PZ ONSEMI fdma910pz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Kind of channel: enhancement
Mounting: SMD
Case: MicroFET
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -20V
Drain current: -9.4A
Gate charge: 29nC
On-state resistance: 34mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
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FDME910PZT ONSEMI FDME910PZT-D.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.1W; uDFN6
Kind of channel: enhancement
Mounting: SMD
Case: uDFN6
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 36mΩ
Power dissipation: 2.1W
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
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MMBT5179 ONSEMI MMBT5179-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
Produkt ist nicht verfügbar
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fds9945 fds9945 ONSEMI FDS9945.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
115+0.62 EUR
130+0.55 EUR
145+0.49 EUR
163+0.44 EUR
Mindestbestellmenge: 100
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DTC144TET1G ONSEMI dtc144t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
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BZX85C12-T50R ONSEMI BZX85C.PDF Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
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1N5380BG 1N5380BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
232+0.31 EUR
264+0.27 EUR
311+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 193
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1N5380BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FOD8314 ONSEMI FOD8314.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 60ns
Turn-off time: 40ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8314
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FOD8314TR2 ONSEMI fod8314-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOP6
Slew rate: 50kV/μs
Output voltage: 35V
Max. off-state voltage: 5V
Manufacturer series: FOD8314
Produkt ist nicht verfügbar
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MC7918CTG MC7918CTG ONSEMI MC7900-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
148+0.48 EUR
180+0.4 EUR
207+0.35 EUR
221+0.32 EUR
Mindestbestellmenge: 105
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BC638TA ONSEMI BC638.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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BC638TA BC638TA ONSEMI BC638.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
321+0.22 EUR
557+0.13 EUR
800+0.089 EUR
1000+0.08 EUR
Mindestbestellmenge: 209
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FPF1003A FPF1003A ONSEMI FPF1003A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 42mΩ
Supply voltage: 1.2...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 440 Stücke:
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218+0.33 EUR
228+0.31 EUR
239+0.3 EUR
250+0.29 EUR
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FDC6324L FDC6324L ONSEMI FDC6324L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 2969 Stücke:
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152+0.47 EUR
161+0.45 EUR
169+0.42 EUR
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NCP380HSN05AAT1G NCP380HSN05AAT1G ONSEMI ncp380-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 2890 Stücke:
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88+0.82 EUR
138+0.52 EUR
146+0.49 EUR
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NTJD1155LT1G NTJD1155LT1G ONSEMI NTJD1155L.PDF Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
203+0.35 EUR
278+0.26 EUR
288+0.25 EUR
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NCP382HD05AAR2G NCP382HD05AAR2G ONSEMI ncp382-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 199 Stücke:
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103+0.7 EUR
141+0.51 EUR
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MC33079DR2G MC33079DR2G ONSEMI MC33079PG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Slew rate: 7V/μs
Bandwidth: 16MHz
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
auf Bestellung 4113 Stücke:
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209+0.34 EUR
268+0.27 EUR
295+0.24 EUR
341+0.21 EUR
363+0.2 EUR
500+0.19 EUR
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MC33072DR2G MC33072DR2G ONSEMI MC3x07x.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
auf Bestellung 1974 Stücke:
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162+0.44 EUR
202+0.35 EUR
225+0.32 EUR
258+0.28 EUR
307+0.23 EUR
338+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
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MC33074DR2G MC33074DR2G ONSEMI MC3x07x.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 859 Stücke:
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112+0.64 EUR
121+0.59 EUR
141+0.51 EUR
155+0.46 EUR
163+0.44 EUR
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MC33071DR2G MC33071DR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
auf Bestellung 2330 Stücke:
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136+0.53 EUR
145+0.49 EUR
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MC33072ADR2G MC33072ADR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
auf Bestellung 2350 Stücke:
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148+0.49 EUR
198+0.36 EUR
225+0.32 EUR
271+0.26 EUR
307+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 148
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MC33077DR2G ONSEMI mc33077-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; Ch: 2; ±2.5÷18VDC; SO8; 1.5mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low noise
Input offset current: 240nA
Input bias current: 1.2µA
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MC33039DR2G ONSEMI mc33039-d.pdf Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC
Mounting: SMD
Operating voltage: 5.5...9V DC
Operating temperature: -40...85°C
Output current: 10mA
Application: universal
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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MC33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Mounting: SMD
Operating voltage: 10...30V DC
Operating temperature: -40...85°C
Output current: 0.1A
Application: universal
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO24
Type of integrated circuit: driver
Number of channels: 3
Supply voltage: 0...40V DC
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MC3303DR2G ONSEMI mc3403-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Bandwidth: 1MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 250nA
Produkt ist nicht verfügbar
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MC33071ADR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Produkt ist nicht verfügbar
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MC33074ADR2G MC33074ADR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC33074ADTBR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MC33074DTBR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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MJH11022G MJH11022G ONSEMI MJH11017G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 66 Stücke:
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15+5.06 EUR
16+4.66 EUR
21+3.49 EUR
Mindestbestellmenge: 15
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MJH11020G MJH11020G ONSEMI MJH11017G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
auf Bestellung 25 Stücke:
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14+5.49 EUR
16+4.62 EUR
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MJH11021G MJH11021G ONSEMI MJH11017G.PDF Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 7 Stücke:
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7+10.21 EUR
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74AC04SC 74AC04SC ONSEMI 74AC04SC.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
auf Bestellung 52 Stücke:
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52+1.37 EUR
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MM74HCT74M MM74HCT74M ONSEMI MM74HCT74M.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Quiescent current: 40µA
Manufacturer series: HCT
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
147+0.49 EUR
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SZMMSZ5248ET1G MMSZ52xxET1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxE
Application: automotive industry
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SZMMSZ5248BT1G MMSZ52xxT1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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RS1J RS1x.pdf
RS1J
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Power dissipation: 1.19W
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
323+0.22 EUR
410+0.17 EUR
486+0.14 EUR
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RS1JFA rs1afa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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RS1JFP rs1mfp-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Case: SOD123HE
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 300ns
Load current: 1.2A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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NRVHPRS1JFA rs1afa-d.pdf
NRVHPRS1JFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Application: automotive industry
Case: SOD123F
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 0.8A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
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KSD880YTU KSD880.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 60V
Current gain: 100...200
Polarisation: bipolar
Frequency: 3MHz
Type of transistor: NPN
Collector current: 3A
Power dissipation: 30W
Produkt ist nicht verfügbar
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FGH40T120SMD FGH40T120SMD.pdf
FGH40T120SMD
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 188 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+10.07 EUR
10+8.65 EUR
Mindestbestellmenge: 8
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FGY60T120SQDN fgy60t120sqdn-d.pdf
FGY60T120SQDN
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.1 EUR
7+11.53 EUR
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FGY75T120SQDN fgy75t120sqdn-d.pdf
FGY75T120SQDN
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.95 EUR
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FGH40T120SMD-F155 FGH40T120SMD.pdf
FGH40T120SMD-F155
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.8 EUR
Mindestbestellmenge: 6
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NXH400N100H4Q2F2PG nxh400n100h4q2f2-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
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NXH450B100H4Q2F2PG nxh450b100h4q2f2-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 450A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Produkt ist nicht verfügbar
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FQPF3N80C FQPF3N80C.pdf
FQPF3N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Gate charge: 16.5nC
Power dissipation: 39W
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
52+1.4 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FQP3N80C FAIRS47784-1.pdf?t.download=true&u=5oefqw
FQP3N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; Idm: 12A; 107W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.5nC
Power dissipation: 107W
Pulsed drain current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC847BWT1G BC84x.pdf
SBC847BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 8120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1250+0.057 EUR
1516+0.047 EUR
2193+0.033 EUR
2565+0.028 EUR
3677+0.019 EUR
4133+0.017 EUR
5051+0.014 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC847BTT1G bc847att1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5C604NLT1G ntmfs5c604nl-d.pdf
NTMFS5C604NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 1.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 100W
Drain current: 203A
Case: DFN5x6
Kind of channel: enhancement
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.45 EUR
33+2.23 EUR
100+1.59 EUR
500+1.44 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
2SB1201S-TL-E 2sb1201-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.8W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.8W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 140...280
Frequency: 150MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14027BDR2G mc14027b-d.pdf
MC14027BDR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Trigger: negative-edge-triggered
auf Bestellung 2298 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
154+0.47 EUR
171+0.42 EUR
197+0.36 EUR
216+0.33 EUR
234+0.31 EUR
250+0.29 EUR
256+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS022N06CLTAG nvljws022n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 90A; 14W; WDFNW6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 14W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1013YTA KSA1013.pdf
KSA1013YTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: Ammo Pack
Type of transistor: PNP
auf Bestellung 1791 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
171+0.42 EUR
295+0.24 EUR
353+0.2 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
KSA1013YBU KSA1013.pdf
KSA1013YBU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Case: TO92
Power dissipation: 0.9W
Collector current: 1A
Current gain: 160...320
Collector-emitter voltage: 160V
Frequency: 50MHz
Polarisation: bipolar
Kind of package: bulk
Type of transistor: PNP
auf Bestellung 5904 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
142+0.51 EUR
232+0.31 EUR
500+0.23 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
FDD4685 FDD4685.pdf
FDD4685
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -32A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
66+1.09 EUR
79+0.92 EUR
80+0.9 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
FDMA910PZ fdma910pz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Kind of channel: enhancement
Mounting: SMD
Case: MicroFET
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -45A
Drain-source voltage: -20V
Drain current: -9.4A
Gate charge: 29nC
On-state resistance: 34mΩ
Power dissipation: 2.4W
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDME910PZT FDME910PZT-D.PDF
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.1W; uDFN6
Kind of channel: enhancement
Mounting: SMD
Case: uDFN6
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 36mΩ
Power dissipation: 2.1W
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT5179 MMBT5179-D.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
fds9945 FDS9945.pdf
fds9945
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
115+0.62 EUR
130+0.55 EUR
145+0.49 EUR
163+0.44 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
DTC144TET1G dtc144t-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C12-T50R BZX85C.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; reel,tape; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5380BG 1N53xx.PDF
1N5380BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
auf Bestellung 801 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
232+0.31 EUR
264+0.27 EUR
311+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
1N5380BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 120V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 120V
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8314 FOD8314.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 60ns
Turn-off time: 40ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD8314
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8314TR2 fod8314-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; Uinsul: 5kV; SOP6; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Insulation voltage: 5kV
Case: SOP6
Slew rate: 50kV/μs
Output voltage: 35V
Max. off-state voltage: 5V
Manufacturer series: FOD8314
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC7918CTG MC7900-D.PDF
MC7918CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
148+0.48 EUR
180+0.4 EUR
207+0.35 EUR
221+0.32 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
BC638TA BC638.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC638TA BC638.pdf
BC638TA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
321+0.22 EUR
557+0.13 EUR
800+0.089 EUR
1000+0.08 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
FPF1003A FPF1003A.pdf
FPF1003A
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP6
On-state resistance: 42mΩ
Supply voltage: 1.2...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
228+0.31 EUR
239+0.3 EUR
250+0.29 EUR
Mindestbestellmenge: 218
Im Einkaufswagen  Stück im Wert von  UAH
FDC6324L FDC6324L.pdf
FDC6324L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 2969 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
161+0.45 EUR
169+0.42 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
NCP380HSN05AAT1G ncp380-d.pdf
NCP380HSN05AAT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
138+0.52 EUR
146+0.49 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
NTJD1155LT1G NTJD1155L.PDF
NTJD1155LT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88
Type of integrated circuit: power switch
Output current: 1.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SC88
On-state resistance: 130/320mΩ
Supply voltage: 1.8...8V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
203+0.35 EUR
278+0.26 EUR
288+0.25 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
NCP382HD05AAR2G ncp382-d.pdf
NCP382HD05AAR2G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 2; P-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 0.5A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
141+0.51 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
MC33079DR2G MC33079PG.PDF
MC33079DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SO14
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Slew rate: 7V/μs
Bandwidth: 16MHz
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...85°C
auf Bestellung 4113 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
268+0.27 EUR
295+0.24 EUR
341+0.21 EUR
363+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
MC33072DR2G MC3x07x.PDF
MC33072DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
auf Bestellung 1974 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
202+0.35 EUR
225+0.32 EUR
258+0.28 EUR
307+0.23 EUR
338+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
MC33074DR2G MC3x07x.PDF
MC33074DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 859 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
121+0.59 EUR
141+0.51 EUR
155+0.46 EUR
163+0.44 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
MC33071DR2G mc34071-d.pdf
MC33071DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
145+0.49 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
MC33072ADR2G mc34071-d.pdf
MC33072ADR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Input offset current: 300nA
Input bias current: 0.7µA
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
198+0.36 EUR
225+0.32 EUR
271+0.26 EUR
307+0.23 EUR
500+0.21 EUR
Mindestbestellmenge: 148
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MC33077DR2G mc33077-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 37MHz; Ch: 2; ±2.5÷18VDC; SO8; 1.5mV
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 1.5mV
Slew rate: 11V/μs
Voltage supply range: ± 2.5...18V DC
Bandwidth: 37MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low noise
Input offset current: 240nA
Input bias current: 1.2µA
Produkt ist nicht verfügbar
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MC33039DR2G mc33039-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC
Mounting: SMD
Operating voltage: 5.5...9V DC
Operating temperature: -40...85°C
Output current: 10mA
Application: universal
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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MC33035DWR2G mc33035-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Mounting: SMD
Operating voltage: 10...30V DC
Operating temperature: -40...85°C
Output current: 0.1A
Application: universal
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO24
Type of integrated circuit: driver
Number of channels: 3
Supply voltage: 0...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC3303DR2G mc3403-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 10mV
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Bandwidth: 1MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Input offset current: 250nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33071ADR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 7mV
Slew rate: 13V/μs
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Bandwidth: 4.5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 300nA
Input bias current: 0.7µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33074ADR2G mc34071-d.pdf
MC33074ADR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33074ADTBR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33074DTBR2G mc34071-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJH11022G MJH11017G.PDF
MJH11022G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.06 EUR
16+4.66 EUR
21+3.49 EUR
Mindestbestellmenge: 15
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MJH11020G MJH11017G.PDF
MJH11020G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 200V
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.49 EUR
16+4.62 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
MJH11021G MJH11017G.PDF
MJH11021G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: PNP
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
74AC04SC 74AC04SC.pdf
74AC04SC
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Mounting: SMD
Number of channels: hex; 6
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 1
Supply voltage: 2...6V DC
Family: AC
Kind of package: tube
Type of integrated circuit: digital
Kind of gate: NOT
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.37 EUR
Mindestbestellmenge: 52
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MM74HCT74M MM74HCT74M.pdf
MM74HCT74M
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Quiescent current: 40µA
Manufacturer series: HCT
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
147+0.49 EUR
Mindestbestellmenge: 147
Im Einkaufswagen  Stück im Wert von  UAH
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