| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MM74HCT04MTCX | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Family: HCT Number of inputs: 1 Kind of package: reel; tape Delay time: 12ns Operating temperature: -40...85°C Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MM74HCT04MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Family: HCT Number of inputs: 1 Kind of package: reel; tape Delay time: 12ns Operating temperature: -40...85°C Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAS40LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 1V |
auf Bestellung 4470 Stücke: Lieferzeit 14-21 Tag (e) |
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DF04S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 400V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 2239 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FAN7382MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™ Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP8 Output current: -650...350mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 140ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
auf Bestellung 896 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF5484 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 1mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR4100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 4A; Ifsm: 70A; CASE267-05; bulk; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 70A Case: CASE267-05 Kind of package: bulk Max. forward voltage: 1.85V Reverse recovery time: 75ns |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV7812BD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
auf Bestellung 1579 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 4.7V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5337BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 4.7V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 4.7V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
auf Bestellung 3400 Stücke: Lieferzeit 14-21 Tag (e) |
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NE592D8R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V Type of integrated circuit: video amplifier Bandwidth: 120MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 8V DC Case: SO8 Operating temperature: 0...70°C Gain: 100V/V; 400V/V Kind of package: reel; tape Input bias current: 40µA Input offset current: 6µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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QSD2030F | ONSEMI |
Category: Photodiodes Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Mounting: THT Viewing angle: 20° Wavelength of peak sensitivity: 880nm Wavelength: 700...1100nm LED diameter: 5mm LED lens: black Operating voltage: 1.3V Front: convex Type of photoelement: photodiode |
auf Bestellung 694 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2/0.3W Case: SOT416 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC114EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 8000pcs. Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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DTC114YM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...140 |
auf Bestellung 4790 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3224TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Case: SO8 Technology: MillerDrive™ Number of channels: 2 Impulse rise time: 20ns Mounting: SMD Supply voltage: 4.5...18V DC Output current: -4.3...2.8A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Pulse fall time: 17ns Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver |
auf Bestellung 1031 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FAN3224CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Case: SO8 Technology: MillerDrive™ Number of channels: 2 Impulse rise time: 20ns Mounting: SMD Supply voltage: 4.5...18V DC Output current: -4.3...2.8A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -40...125°C Pulse fall time: 17ns Kind of package: reel; tape Kind of integrated circuit: low-side; MOSFET gate driver |
auf Bestellung 2489 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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4N32M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms CTR@If: 50%@10mA |
auf Bestellung 1346 Stücke: Lieferzeit 14-21 Tag (e) |
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4N32SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV Collector-emitter voltage: 30V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 0.1ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ES3J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF Power dissipation: 1.66W |
auf Bestellung 4999 Stücke: Lieferzeit 14-21 Tag (e) |
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FQAF11N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 120W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MJL21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 4MHz |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFSC011N08M7 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 61A Pulsed drain current: 180A Power dissipation: 31.2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FSB50450S | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023 Frequency: 15kHz Mounting: SMD Topology: MOSFET three-phase bridge Collector-emitter voltage: 500V Output current: 1.5A Type of integrated circuit: driver Power dissipation: 10W Operating temperature: -20...100°C Technology: Motion SPM® 5 Case: SPM5D-023 Kind of integrated circuit: 3-phase motor controller; IPM Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FSB50550US | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Mounting: SMD Topology: MOSFET three-phase bridge Collector-emitter voltage: 500V Output current: 2A Type of integrated circuit: driver Power dissipation: 14.5W Operating temperature: -40...150°C Technology: Motion SPM® 5 Case: SPM5H-023 Kind of integrated circuit: 3-phase motor controller; IPM Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RS1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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RS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RS1JFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±25V Collector current: 60A Collector-emitter voltage: 1.2kV Power dissipation: 259W Gate charge: 311nC Pulsed collector current: 240A Type of transistor: IGBT |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.2kV Power dissipation: 395W Gate charge: 399nC Pulsed collector current: 300A Type of transistor: IGBT |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14027BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: JK flip-flop Number of channels: 2 Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Operating temperature: -40...85°C Trigger: negative-edge-triggered |
auf Bestellung 1861 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 160...320 |
auf Bestellung 3044 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 50MHz Current gain: 160...320 |
auf Bestellung 5635 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C12-T50R | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Case: TO220AB Tolerance: ±4% Mounting: THT Kind of voltage regulator: fixed; linear Manufacturer series: MC7900 Output current: 1A Type of integrated circuit: voltage regulator Voltage drop: 1.3V Operating temperature: 0...125°C Heatsink thickness: 0.508...0.61mm Output voltage: -18V Kind of package: tube Number of channels: 1 |
auf Bestellung 2004 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
auf Bestellung 1225 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 16MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 5...18V DC; 10...36V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 7V/μs Integrated circuit features: low noise Input offset voltage: 3.5mV Kind of package: reel; tape |
auf Bestellung 2287 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
auf Bestellung 681 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC33035DWR2G | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Operating temperature: -40...85°C Mounting: SMD Supply voltage: 0...40V DC Output current: 0.1A Type of integrated circuit: driver Application: universal Kind of package: reel; tape Case: SO24 Kind of integrated circuit: brushless motor controller Number of channels: 3 Operating voltage: 10...30V DC Topology: H-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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74AC04SC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Family: AC Number of inputs: 1 Kind of package: tube Supply voltage: 2...6V DC Operating temperature: -40...85°C Quiescent current: 20µA |
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MM74HCT74M | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: HCT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Quiescent current: 40µA Trigger: positive-edge-triggered |
auf Bestellung 105 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD380N60E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FCP380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 106W Case: TO220-3 On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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FCP380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 106W Case: TO220-3 On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 89W Case: DPAK On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 39A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FCPF380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 31W Case: TO220FP On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FCPF380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 31W Case: TO220FP On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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BAV70LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Power dissipation: 0.3W Max. load current: 0.5A Leakage current: 0.1mA Capacitance: 1.5pF Max. forward impulse current: 31A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC33151DG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Output voltage: 0.8...11.2V Impulse rise time: 30ns Output current: -1.5...1.5A Kind of output: inverting Protection: undervoltage UVP Pulse fall time: 30ns |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33151PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: inverting Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MM74HCT04MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Number of inputs: 1
Kind of package: reel; tape
Delay time: 12ns
Operating temperature: -40...85°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 12ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Family: HCT
Number of inputs: 1
Kind of package: reel; tape
Delay time: 12ns
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT04MX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Number of inputs: 1
Kind of package: reel; tape
Delay time: 12ns
Operating temperature: -40...85°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Family: HCT
Number of inputs: 1
Kind of package: reel; tape
Delay time: 12ns
Operating temperature: -40...85°C
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS40LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 1V
auf Bestellung 4470 Stücke:
Lieferzeit 14-21 Tag (e)
| DF04S |
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Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2239 Stücke:
Lieferzeit 14-21 Tag (e)
| FAN7382MX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,gate driver; MillerDrive™
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
auf Bestellung 896 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBF5484 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
| MUR4100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; Ifsm: 70A; CASE267-05; bulk; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 70A
Case: CASE267-05
Kind of package: bulk
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; Ifsm: 70A; CASE267-05; bulk; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 70A
Case: CASE267-05
Kind of package: bulk
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
| NCV7812BD2TR4G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
auf Bestellung 1579 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5337BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5337BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 4.7V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 4.7V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
auf Bestellung 3400 Stücke:
Lieferzeit 14-21 Tag (e)
| NE592D8R2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Bandwidth: 120MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 8V DC
Case: SO8
Operating temperature: 0...70°C
Gain: 100V/V; 400V/V
Kind of package: reel; tape
Input bias current: 40µA
Input offset current: 6µA
Category: SMD operational amplifiers
Description: IC: video amplifier; 120MHz; Ch: 2; ±8VDC; SO8; 100V/V,400V/V
Type of integrated circuit: video amplifier
Bandwidth: 120MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 8V DC
Case: SO8
Operating temperature: 0...70°C
Gain: 100V/V; 400V/V
Kind of package: reel; tape
Input bias current: 40µA
Input offset current: 6µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| QSD2030F |
|
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Viewing angle: 20°
Wavelength of peak sensitivity: 880nm
Wavelength: 700...1100nm
LED diameter: 5mm
LED lens: black
Operating voltage: 1.3V
Front: convex
Type of photoelement: photodiode
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Mounting: THT
Viewing angle: 20°
Wavelength of peak sensitivity: 880nm
Wavelength: 700...1100nm
LED diameter: 5mm
LED lens: black
Operating voltage: 1.3V
Front: convex
Type of photoelement: photodiode
auf Bestellung 694 Stücke:
Lieferzeit 14-21 Tag (e)
| DTC114EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
| DTC114EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DTC114YM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
auf Bestellung 4790 Stücke:
Lieferzeit 14-21 Tag (e)
| FAN3224TMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Number of channels: 2
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -4.3...2.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Number of channels: 2
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -4.3...2.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
auf Bestellung 1031 Stücke:
Lieferzeit 14-21 Tag (e)
| FAN3224CMX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Number of channels: 2
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -4.3...2.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Case: SO8
Technology: MillerDrive™
Number of channels: 2
Impulse rise time: 20ns
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -4.3...2.8A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -40...125°C
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
| 4N32M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
CTR@If: 50%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
CTR@If: 50%@10mA
auf Bestellung 1346 Stücke:
Lieferzeit 14-21 Tag (e)
| 4N32SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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| ES3J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
auf Bestellung 4999 Stücke:
Lieferzeit 14-21 Tag (e)
| FQAF11N90C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| MJL21194G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFSC011N08M7 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FSB50450S |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Frequency: 15kHz
Mounting: SMD
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
Power dissipation: 10W
Operating temperature: -20...100°C
Technology: Motion SPM® 5
Case: SPM5D-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Frequency: 15kHz
Mounting: SMD
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
Power dissipation: 10W
Operating temperature: -20...100°C
Technology: Motion SPM® 5
Case: SPM5D-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| FSB50550US |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Mounting: SMD
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Operating temperature: -40...150°C
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Mounting: SMD
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Operating temperature: -40...150°C
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Produkt ist nicht verfügbar
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| SZMMSZ5248BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1J |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
| RS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RS1JFP |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NRVHPRS1JFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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| FGH40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| FGY60T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±25V
Collector current: 60A
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Pulsed collector current: 240A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±25V
Collector current: 60A
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Pulsed collector current: 240A
Type of transistor: IGBT
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| FGY75T120SQDN |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| FGH40T120SMD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| FQPF3N80C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| MC14027BDR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
auf Bestellung 1861 Stücke:
Lieferzeit 14-21 Tag (e)
| KSA1013YTA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 160...320
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 160...320
auf Bestellung 3044 Stücke:
Lieferzeit 14-21 Tag (e)
| KSA1013YBU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Current gain: 160...320
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Current gain: 160...320
auf Bestellung 5635 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX85C12-T50R |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC7918CTG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Case: TO220AB
Tolerance: ±4%
Mounting: THT
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: 0...125°C
Heatsink thickness: 0.508...0.61mm
Output voltage: -18V
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Case: TO220AB
Tolerance: ±4%
Mounting: THT
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: 0...125°C
Heatsink thickness: 0.508...0.61mm
Output voltage: -18V
Kind of package: tube
Number of channels: 1
auf Bestellung 2004 Stücke:
Lieferzeit 14-21 Tag (e)
| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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Stück im Wert von UAH
| BC638TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1225 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33079DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC; 10...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Kind of package: reel; tape
auf Bestellung 2287 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33074DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33035DWR2G |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 0...40V DC
Output current: 0.1A
Type of integrated circuit: driver
Application: universal
Kind of package: reel; tape
Case: SO24
Kind of integrated circuit: brushless motor controller
Number of channels: 3
Operating voltage: 10...30V DC
Topology: H-bridge
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Operating temperature: -40...85°C
Mounting: SMD
Supply voltage: 0...40V DC
Output current: 0.1A
Type of integrated circuit: driver
Application: universal
Kind of package: reel; tape
Case: SO24
Kind of integrated circuit: brushless motor controller
Number of channels: 3
Operating voltage: 10...30V DC
Topology: H-bridge
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| MC33074ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074ADTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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| MC33074DTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| 74AC04SC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Kind of package: tube
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Family: AC
Number of inputs: 1
Kind of package: tube
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Quiescent current: 20µA
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| MM74HCT74M |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: HCT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Trigger: positive-edge-triggered
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
| FCD380N60E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| FCP380N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP380N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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| NTD280N60S5Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: DPAK
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 39A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: DPAK
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 39A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| FCPF380N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF380N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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| BAV70LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.3W
Max. load current: 0.5A
Leakage current: 0.1mA
Capacitance: 1.5pF
Max. forward impulse current: 31A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.3W
Max. load current: 0.5A
Leakage current: 0.1mA
Capacitance: 1.5pF
Max. forward impulse current: 31A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| MC33151DG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Output voltage: 0.8...11.2V
Impulse rise time: 30ns
Output current: -1.5...1.5A
Kind of output: inverting
Protection: undervoltage UVP
Pulse fall time: 30ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Output voltage: 0.8...11.2V
Impulse rise time: 30ns
Output current: -1.5...1.5A
Kind of output: inverting
Protection: undervoltage UVP
Pulse fall time: 30ns
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33151PG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| MC33151DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH