Technische Details MBT3906DW1T1G ON Semiconductor
Description: TRANS 2PNP 40V 200MA SC88/SC70, Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Voltage - Collector Emitter Breakdown (Max): 40V, Current - Collector (Ic) (Max): 200mA, Power - Max: 150mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote MBT3906DW1T1G nach Preis ab 0.03 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MBT3906DW1T1G | ON Semiconductor |
 Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R |
auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT3906DW1T1G | ON Semiconductor |
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R |
auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT3906DW1T1G | ON Semiconductor |
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R |
auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT3906DW1T1G | onsemi |
Description: TRANS 2PNP 40V 200MA SC88/SC70 Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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MBT3906DW1T1G | ON Semiconductor |
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R |
auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT3906DW1T1G | ON Semiconductor |
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBT3906DW1T1G | onsemi |
Bipolar Transistors - BJT SS GP XSTR PNP 40V |
auf Bestellung 31913 Stücke: Lieferzeit 10-14 Tag (e) |
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MBT3906DW1T1G | onsemi |
Description: TRANS 2PNP 40V 200MA SC88/SC70 Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 19229 Stücke: Lieferzeit 10-14 Tag (e) |
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MBT3906DW1T1G | ON Semiconductor |
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MBT3906DW1T1G | ON Semiconductor |
Подвоєний транзистор PNP, Uceo, В = 40, Ic = 200 мА, ft, МГц = 250, hFE = 100 @ 10 мА, 1 В, Uceo(sat), В @ Ic, Ib = 0,4 @ 5 мА, 50 мА, Р, Вт = 0,15, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SC70-6 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 85 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| MBT3906DW1T1G |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
auf Bestellung 54000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14219+ | 0.046 EUR |
| MBT3906DW1T1G |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.06 EUR |
| 6000+ | 0.049 EUR |
| 9000+ | 0.038 EUR |
| 24000+ | 0.032 EUR |
| MBT3906DW1T1G |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.06 EUR |
| 6000+ | 0.048 EUR |
| 9000+ | 0.037 EUR |
| 24000+ | 0.031 EUR |
| MBT3906DW1T1G |
|
Hersteller: onsemi
Description: TRANS 2PNP 40V 200MA SC88/SC70
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS 2PNP 40V 200MA SC88/SC70
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.071 EUR |
| 6000+ | 0.064 EUR |
| 9000+ | 0.061 EUR |
| 15000+ | 0.056 EUR |
| MBT3906DW1T1G |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.073 EUR |
| 9000+ | 0.056 EUR |
| 27000+ | 0.052 EUR |
| 51000+ | 0.05 EUR |
| MBT3906DW1T1G |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 502+ | 0.35 EUR |
| 822+ | 0.2 EUR |
| 1325+ | 0.12 EUR |
| 1819+ | 0.086 EUR |
| 2067+ | 0.073 EUR |
| 3000+ | 0.052 EUR |
| 6000+ | 0.04 EUR |
| 9000+ | 0.032 EUR |
| 24000+ | 0.03 EUR |
| MBT3906DW1T1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT SS GP XSTR PNP 40V
Bipolar Transistors - BJT SS GP XSTR PNP 40V
auf Bestellung 31913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.088 EUR |
| 3000+ | 0.067 EUR |
| MBT3906DW1T1G |
|
Hersteller: onsemi
Description: TRANS 2PNP 40V 200MA SC88/SC70
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 40V 200MA SC88/SC70
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 19229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 96+ | 0.21 EUR |
| 155+ | 0.13 EUR |
| 500+ | 0.099 EUR |
| 1000+ | 0.087 EUR |
| MBT3906DW1T1G |
|
Hersteller: ON Semiconductor
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
Trans GP BJT PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| MBT3906DW1T1G |
|
Hersteller: ON Semiconductor
Подвоєний транзистор PNP, Uceo, В = 40, Ic = 200 мА, ft, МГц = 250, hFE = 100 @ 10 мА, 1 В, Uceo(sat), В @ Ic, Ib = 0,4 @ 5 мА, 50 мА, Р, Вт = 0,15, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SC70-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Подвоєний транзистор PNP, Uceo, В = 40, Ic = 200 мА, ft, МГц = 250, hFE = 100 @ 10 мА, 1 В, Uceo(sat), В @ Ic, Ib = 0,4 @ 5 мА, 50 мА, Р, Вт = 0,15, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SC70-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 85 Stücke: