FDS86252 onsemi / Fairchild
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.46 EUR |
| 10+ | 1.23 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |
| 2500+ | 0.76 EUR |
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Technische Details FDS86252 onsemi / Fairchild
Description: MOSFET N-CH 150V 4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V.
Weitere Produktangebote FDS86252 nach Preis ab 0.88 EUR bis 3.25 EUR
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FDS86252 | onsemi |
 MOSFETs 150V N-Channel PowerTrench MOSFET |
auf Bestellung 7047 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86252 | onsemi |
Description: MOSFET N-CH 150V 4.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V |
auf Bestellung 544 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDS86252 |
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Hersteller: onsemi
MOSFETs 150V N-Channel PowerTrench MOSFET
MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 7047 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.25 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.01 EUR |
| 2500+ | 0.89 EUR |
| 5000+ | 0.88 EUR |
| FDS86252 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
Description: MOSFET N-CH 150V 4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 75 V
auf Bestellung 544 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 11+ | 2.06 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.08 EUR |