NRTS6100TFSTXG ON Semiconductor
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Technische Details NRTS6100TFSTXG ON Semiconductor
Description: DIODE SCHOTTKY 100V 6A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 782pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: 8-WDFN (3.3x3.3), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 100 V.
Weitere Produktangebote NRTS6100TFSTXG
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NRTS6100TFSTXG | Hersteller : onsemi |
 Description: DIODE SCHOTTKY 100V 6A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
Produkt ist nicht verfügbar |
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NRTS6100TFSTXG | Hersteller : onsemi |
Description: DIODE SCHOTTKY 100V 6A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 782pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
Produkt ist nicht verfügbar |