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BUX85G BUX85G ONSEMI BUX85.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
Produkt ist nicht verfügbar
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MPSA56G MPSA56G ONSEMI MPSA56G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
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PACDN042Y3R PACDN042Y3R ONSEMI PACDN04x.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD
Number of channels: 2
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Version: ESD
Semiconductor structure: unidirectional
Type of diode: TVS array
Max. off-state voltage: 5.5V
Application: automotive industry
auf Bestellung 492 Stücke:
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179+0.4 EUR
248+0.29 EUR
304+0.24 EUR
424+0.17 EUR
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FQP2N80 FQP2N80 ONSEMI fqp2n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 1.52A
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQPF2N80 FQPF2N80 ONSEMI fqpf2n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQPF2N80YDTU FQPF2N80YDTU ONSEMI fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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FQD2N90TM FQD2N90TM ONSEMI fqu2n90tu_am002-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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FQU2N90TU-AM002 ONSEMI FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FQU2N90TU-WS ONSEMI fqu2n90tu_am002-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
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18+4.15 EUR
23+3.15 EUR
50+2.59 EUR
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MC33178DR2G MC33178DR2G ONSEMI MC33178DG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
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203+0.35 EUR
227+0.32 EUR
269+0.27 EUR
300+0.24 EUR
500+0.23 EUR
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2N6488G 2N6488G ONSEMI 2n6487-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
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2N6491G 2N6491G ONSEMI 2n6487-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
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FJI5603DTU FJI5603DTU ONSEMI fji5603d-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Case: I2PAK
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 3A
Current gain: 20...35
Power dissipation: 100W
Collector-emitter voltage: 800V
Frequency: 5MHz
Polarisation: bipolar
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MUR1520G MUR1520G ONSEMI MUR15xx.PDF description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
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103+0.7 EUR
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1SMB5919BT3G 1SMB5919BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 6143 Stücke:
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200+0.36 EUR
253+0.28 EUR
295+0.24 EUR
432+0.17 EUR
506+0.14 EUR
642+0.11 EUR
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SZ1SMB5919BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDWS86368-F085 ONSEMI fdws86368_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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35+2.04 EUR
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FQPF6N80T FQPF6N80T ONSEMI fqpf6n80t-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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FCP099N60E ONSEMI fcp099n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
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NTHL099N60S5 ONSEMI nthl099n60s5-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
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FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCMT299N60 ONSEMI fcmt299n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
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FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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FAN7388MX ONSEMI fan7388-d.pdf Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
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MJ15023G MJ15023G ONSEMI MJ15023G.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
auf Bestellung 42 Stücke:
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10+7.28 EUR
11+6.51 EUR
Mindestbestellmenge: 10
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BZX84C12 ONSEMI BZX84Cxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
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SZBZX84C12LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C12ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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MC10H125PG MC10H125PG ONSEMI MC10H125FNG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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MC10H124FNG MC10H124FNG ONSEMI MC10H124FNG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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MC10H124FNR2G MC10H124FNR2G ONSEMI MC10H124FNG.pdf Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
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MC10H125FNG MC10H125FNG ONSEMI MC10H125FNG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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MC10H125FNR2G MC10H125FNR2G ONSEMI MC10H125FNG.pdf Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
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NSVR201MXT5G ONSEMI nsvr201mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
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CAV24C32WE-GT3 ONSEMI CAV24C32-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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NVMYS011N04CTWG ONSEMI nvmys011n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FGY100T65SCDT ONSEMI fgy100t65scdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
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FDMS8025S ONSEMI FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
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FCH070N60E ONSEMI fch070n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Produkt ist nicht verfügbar
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FCH170N60 ONSEMI fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FCP170N60 ONSEMI FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw fcp170n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Produkt ist nicht verfügbar
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NUF6401MNT1G ONSEMI nuf6401-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
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NUF6400MNTBG ONSEMI nuf6400mn-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
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BAS20LT1G BAS20LT1G ONSEMI ZMP_60970.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. off-state voltage: 200V
Kind of package: reel; tape
Load current: 0.2A
Max. forward voltage: 1.25V
Capacitance: 5pF
Reverse recovery time: 50ns
auf Bestellung 47333 Stücke:
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715+0.1 EUR
1163+0.061 EUR
1613+0.044 EUR
1832+0.039 EUR
2233+0.032 EUR
2689+0.027 EUR
3334+0.021 EUR
3876+0.018 EUR
Mindestbestellmenge: 715
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BAS20HT1G BAS20HT1G ONSEMI BAS20H.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3065 Stücke:
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625+0.11 EUR
770+0.093 EUR
824+0.087 EUR
1142+0.063 EUR
1313+0.054 EUR
3000+0.037 EUR
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SBAS20HT1G SBAS20HT1G ONSEMI bas20ht1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
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NSVBAS20LT3G ONSEMI bas19lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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NC7SV125P5X ONSEMI NC7SV125-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.9...3.6V DC
Family: NC
Produkt ist nicht verfügbar
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BCP68T1G BCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
159+0.45 EUR
200+0.36 EUR
304+0.24 EUR
500+0.17 EUR
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SBCP68T1G SBCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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NSVBCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 60MHz
Produkt ist nicht verfügbar
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MC74HC153ADG MC74HC153ADG ONSEMI MC74HC153A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
104+0.69 EUR
115+0.62 EUR
133+0.54 EUR
157+0.46 EUR
186+0.38 EUR
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MC74HC390ADG MC74HC390ADG ONSEMI MC74HC390A-D.pdf Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
auf Bestellung 115 Stücke:
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76+0.94 EUR
92+0.78 EUR
103+0.7 EUR
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MC74HC365ADTR2G MC74HC365ADTR2G ONSEMI MC74HC365A-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
auf Bestellung 2349 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
275+0.26 EUR
313+0.23 EUR
323+0.22 EUR
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MC14001UBDR2G MC14001UBDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
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LM317T LM317T ONSEMI LM317T-FAI.pdf Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Produkt ist nicht verfügbar
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ES2D ES2D ONSEMI es2d-d.pdf ES2(A-J)%20N0160%20REV.D.pdf ES2_1.pdf es2a.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2x.pdf ES2A SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 2907 Stücke:
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186+0.39 EUR
253+0.28 EUR
350+0.2 EUR
397+0.18 EUR
Mindestbestellmenge: 186
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BUX85G BUX85.PDF
BUX85G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 2A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 2A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Frequency: 4MHz
Kind of package: tube
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MPSA56G MPSA56G.PDF
MPSA56G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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PACDN042Y3R PACDN04x.PDF
PACDN042Y3R
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT23; Ch: 2; reel,tape; ESD
Number of channels: 2
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Version: ESD
Semiconductor structure: unidirectional
Type of diode: TVS array
Max. off-state voltage: 5.5V
Application: automotive industry
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
248+0.29 EUR
304+0.24 EUR
424+0.17 EUR
Mindestbestellmenge: 179
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FQP2N80 fqp2n80-d.pdf
FQP2N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 1.52A
Pulsed drain current: 9.6A
Power dissipation: 85W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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FQPF2N80 fqpf2n80-d.pdf
FQPF2N80
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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FQPF2N80YDTU fqpf2n80ydtu-d.pdf FAIRS45220-1.pdf?t.download=true&u=5oefqw
FQPF2N80YDTU
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
On-state resistance: 6.3Ω
Drain current: 0.95A
Pulsed drain current: 6A
Power dissipation: 35W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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FQD2N90TM fqu2n90tu_am002-d.pdf
FQD2N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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FQU2N90TU-AM002 FAIR-S-A0000011405-1.pdf?t.download=true&u=5oefqw fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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FQU2N90TU-WS fqu2n90tu_am002-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.15 EUR
23+3.15 EUR
50+2.59 EUR
Mindestbestellmenge: 18
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MC33178DR2G MC33178DG.PDF
MC33178DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; SO8; 4mV
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
203+0.35 EUR
227+0.32 EUR
269+0.27 EUR
300+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 152
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2N6488G 2n6487-d.pdf
2N6488G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Case: TO220AB
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 15A
Current gain: 20...150
Power dissipation: 75W
Collector-emitter voltage: 80V
Frequency: 5MHz
Polarisation: bipolar
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
88+0.82 EUR
Mindestbestellmenge: 70
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2N6491G description 2n6487-d.pdf
2N6491G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
Produkt ist nicht verfügbar
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FJI5603DTU fji5603d-d.pdf
FJI5603DTU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Case: I2PAK
Type of transistor: NPN
Kind of package: tube
Mounting: THT
Collector current: 3A
Current gain: 20...35
Power dissipation: 100W
Collector-emitter voltage: 800V
Frequency: 5MHz
Polarisation: bipolar
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
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MUR1520G description MUR15xx.PDF
MUR1520G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15A; tube; Ifsm: 200A; TO220-2; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 30A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
Mindestbestellmenge: 103
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1SMB5919BT3G 1SMB59xxBT3G.PDF
1SMB5919BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 6143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
253+0.28 EUR
295+0.24 EUR
432+0.17 EUR
506+0.14 EUR
642+0.11 EUR
Mindestbestellmenge: 200
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SZ1SMB5919BT3G 1SMB59xxBT3G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
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FDWS86368-F085 fdws86368_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 214W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 214W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQP6N80C FQP6N80C.pdf
FQP6N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
35+2.04 EUR
50+1.73 EUR
Mindestbestellmenge: 30
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FQPF6N80T fqpf6n80t-d.pdf
FQPF6N80T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.1A; Idm: 13.2A; 51W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.1A
Pulsed drain current: 13.2A
Power dissipation: 51W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP099N60E fcp099n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
Produkt ist nicht verfügbar
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NTHL099N60S5 nthl099n60s5-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Produkt ist nicht verfügbar
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FCMT199N60 fcmt199n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
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FCMT299N60 fcmt299n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
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FDBL0210N80 fdbl0210n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
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FAN7388MX fan7388-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO20; 10÷20V
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO20
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Operating temperature: -40...150°C
Output current: 350...650mA
Supply voltage: 10...20V
Produkt ist nicht verfügbar
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MJ15023G description MJ15023G.PDF
MJ15023G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Collector current: 16A
Collector-emitter voltage: 200V
Power dissipation: 250W
Frequency: 4MHz
Polarisation: bipolar
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.28 EUR
11+6.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C12 BZX84Cxx.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
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SZBZX84C12LT1G BZX84B_BZX84C.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
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SZBZX84C12ET1G BZX84CxxET1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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MC10H125PG MC10H125FNG.pdf
MC10H125PG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: THT
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: DIP16
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Produkt ist nicht verfügbar
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MC10H124FNG MC10H124FNG.pdf
MC10H124FNG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Produkt ist nicht verfügbar
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MC10H124FNR2G MC10H124FNG.pdf
MC10H124FNR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 4; SMD; PLCC20
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 8
Number of channels: 4
Number of inputs: 5
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Produkt ist nicht verfügbar
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MC10H125FNG MC10H125FNG.pdf
MC10H125FNG
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: tube
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Produkt ist nicht verfügbar
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MC10H125FNR2G MC10H125FNG.pdf
MC10H125FNR2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 4
Mounting: SMD
Operating temperature: 0...75°C
Number of outputs: 4
Number of channels: 4
Number of inputs: 8
Kind of package: reel; tape
Manufacturer series: 10H
Case: PLCC20
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Produkt ist nicht verfügbar
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NSVR201MXT5G nsvr201mx-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 2V; 50mA; reel,tape
Type of diode: Schottky switching
Case: X2DFN2
Mounting: SMD
Max. off-state voltage: 2V
Load current: 50mA
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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CAV24C32WE-GT3 CAV24C32-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NVMYS011N04CTWG nvmys011n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FGY100T65SCDT fgy100t65scdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Type of transistor: IGBT
Case: TO247-3
Gate charge: 157nC
Power dissipation: 375W
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Kind of package: tube
Produkt ist nicht verfügbar
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FDMS8025S FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FCH070N60E fch070n60e-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 156A
Produkt ist nicht verfügbar
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FCH170N60 fch170n60-d.pdf ONSM-S-A0003584973-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FCP170N60 FAIR-S-A0002365465-1.pdf?t.download=true&u=5oefqw fcp170n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 66A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1620A
Produkt ist nicht verfügbar
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NUF6401MNT1G nuf6401-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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NUF6400MNTBG nuf6400mn-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; DFN12; Ch: 6; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Number of channels: 6
Case: DFN12
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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BAS20LT1G ZMP_60970.pdf
BAS20LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. off-state voltage: 200V
Kind of package: reel; tape
Load current: 0.2A
Max. forward voltage: 1.25V
Capacitance: 5pF
Reverse recovery time: 50ns
auf Bestellung 47333 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1163+0.061 EUR
1613+0.044 EUR
1832+0.039 EUR
2233+0.032 EUR
2689+0.027 EUR
3334+0.021 EUR
3876+0.018 EUR
Mindestbestellmenge: 715
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BAS20HT1G BAS20H.pdf
BAS20HT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 625mA
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3065 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
770+0.093 EUR
824+0.087 EUR
1142+0.063 EUR
1313+0.054 EUR
3000+0.037 EUR
Mindestbestellmenge: 625
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SBAS20HT1G bas20ht1-d.pdf
SBAS20HT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVBAS20LT3G bas19lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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NC7SV125P5X NC7SV125-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; TinyLogic
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: TinyLogic
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.9...3.6V DC
Family: NC
Produkt ist nicht verfügbar
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BCP68T1G bcp68t1-d.pdf
BCP68T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
auf Bestellung 966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
159+0.45 EUR
200+0.36 EUR
304+0.24 EUR
500+0.17 EUR
Mindestbestellmenge: 125
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SBCP68T1G bcp68t1-d.pdf
SBCP68T1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NSVBCP68T1G bcp68t1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 60MHz
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MC74HC153ADG MC74HC153A-D.pdf
MC74HC153ADG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 2; IN: 5; CMOS; SMD; HC
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: tube
Number of inputs: 5
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 2
Kind of integrated circuit: data selector; multiplexer
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
104+0.69 EUR
115+0.62 EUR
133+0.54 EUR
157+0.46 EUR
186+0.38 EUR
Mindestbestellmenge: 95
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MC74HC390ADG MC74HC390A-D.pdf
MC74HC390ADG
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 2; IN: 3; CMOS; HC; SMD; SOIC16; HC; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 4-stage; binary ripple counter; divided by 2; divided by 5
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SOIC16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
92+0.78 EUR
103+0.7 EUR
Mindestbestellmenge: 76
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MC74HC365ADTR2G MC74HC365A-D.pdf
MC74HC365ADTR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
auf Bestellung 2349 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
275+0.26 EUR
313+0.23 EUR
323+0.22 EUR
Mindestbestellmenge: 193
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MC14001UBDR2G MC14001B-D.pdf
MC14001UBDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Kind of package: reel; tape
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
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LM317T LM317T-FAI.pdf
LM317T
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 1.5A; TO220-3
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 1.5A
Case: TO220-3
Mounting: THT
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 3...40V
Heatsink thickness: 0.51...0.61mm
Kind of package: tube
Produkt ist nicht verfügbar
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ES2D es2d-d.pdf ES2(A-J)%20N0160%20REV.D.pdf ES2_1.pdf es2a.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2x.pdf ES2A SERIES_L2102.pdf
ES2D
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 2907 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
253+0.28 EUR
350+0.2 EUR
397+0.18 EUR
Mindestbestellmenge: 186
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