| Anzahl | Preis |
|---|---|
| 1+ | 8.43 EUR |
| 25+ | 7.32 EUR |
| 100+ | 6.32 EUR |
| 250+ | 5.88 EUR |
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Technische Details UJ3D06520KSD Qorvo
Description: DIODE SIL CARB 650V 10A TO247-3, Supplier Device Package: TO-247-3, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 654pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 120 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C.
Weitere Produktangebote UJ3D06520KSD nach Preis ab 6.22 EUR bis 13.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ3D06520KSD | onsemi |
 SiC Schottky Diodes 650V/20ASICDIODEDUALG |
auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D06520KSD | onsemi |
Description: DIODE SIL CARB 650V 10A TO247-3 Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 654pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 120 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C |
auf Bestellung 7418 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ3D06520KSD |
|
Hersteller: onsemi
SiC Schottky Diodes 650V/20ASICDIODEDUALG
SiC Schottky Diodes 650V/20ASICDIODEDUALG
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.89 EUR |
| 10+ | 8.18 EUR |
| 100+ | 6.49 EUR |
| UJ3D06520KSD |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE SIL CARB 650V 10A TO247-3
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 654pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 7418 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.89 EUR |
| 30+ | 7.63 EUR |
| 120+ | 6.9 EUR |
| 510+ | 6.22 EUR |