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FQPF19N20C FQPF19N20C ONSEMI fqpf19n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 999 Stücke:
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32+2.29 EUR
40+1.79 EUR
46+1.56 EUR
62+1.16 EUR
100+1.06 EUR
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FQD13N06LTM FQD13N06LTM ONSEMI FQD13N06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2023 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
120+0.6 EUR
141+0.51 EUR
176+0.41 EUR
250+0.4 EUR
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FQP6N80C FQP6N80C ONSEMI FQP6N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
auf Bestellung 141 Stücke:
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23+3.17 EUR
29+2.5 EUR
33+2.19 EUR
50+1.64 EUR
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FQB5N90TM FQB5N90TM ONSEMI FQB5N90.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 709 Stücke:
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23+3.23 EUR
25+2.92 EUR
27+2.72 EUR
30+2.43 EUR
50+2.2 EUR
100+2.19 EUR
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FQP45N15V2 FQP45N15V2 ONSEMI FQP45N15V2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Drain current: 31A
Drain-source voltage: 150V
Gate-source voltage: ±30V
Gate charge: 94nC
On-state resistance: 40mΩ
Power dissipation: 220W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: QFET®
auf Bestellung 85 Stücke:
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22+3.32 EUR
36+2.02 EUR
50+1.77 EUR
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FQB55N10TM FQB55N10TM ONSEMI FQB55N10.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 237 Stücke:
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24+3 EUR
31+2.36 EUR
34+2.16 EUR
38+1.9 EUR
50+1.73 EUR
100+1.69 EUR
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FQB19N20LTM FQB19N20LTM ONSEMI FQB19N20L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
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32+2.26 EUR
45+1.62 EUR
52+1.4 EUR
58+1.24 EUR
100+1.22 EUR
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FQD6N40CTM FQD6N40CTM ONSEMI FQD6N40C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
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51+1.42 EUR
59+1.22 EUR
68+1.06 EUR
100+0.83 EUR
250+0.8 EUR
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FQP11N40C FQP11N40C ONSEMI FQP11N40C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
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33+2.17 EUR
37+1.94 EUR
44+1.64 EUR
50+1.56 EUR
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FQD9N25TM-F080 FQD9N25TM-F080 ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
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MC7905CTG MC7905CTG ONSEMI MC7900-D.PDF description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Manufacturer series: MC7900
Operating temperature: 0...125°C
Case: TO220AB
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Mounting: THT
Output voltage: -5V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Number of channels: 1
Voltage drop: 1.3V
Tolerance: ±4%
Kind of package: tube
auf Bestellung 392 Stücke:
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120+0.6 EUR
164+0.44 EUR
180+0.4 EUR
193+0.37 EUR
205+0.35 EUR
250+0.32 EUR
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NV24C512MUW3VTBG ONSEMI NV24C512MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Operating temperature: -40...125°C
Access time: 0.4ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 1MHz
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CAV24C512YE-GT3 ONSEMI CAV24C512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Operating temperature: -40...125°C
Access time: 400ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 1MHz
Produkt ist nicht verfügbar
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SA5534ADR2G ONSEMI ne5534-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: SO8
Integrated circuit features: low noise
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 200nA
Input bias current: 0.8µA
Input offset voltage: 2mV
Voltage supply range: ± 3...20V DC
Slew rate: 13V/μs
Bandwidth: 10MHz
Produkt ist nicht verfügbar
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NCP1597AMNTWG ONSEMI ncp1597-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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MJ802GMJ802G
MJ802GMJ802G
 MJ802G ONSEMI mj802-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.57 EUR
11+7.01 EUR
12+6.26 EUR
50+6.08 EUR
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PIR-GEVB ONSEMI PIR-GEVB_Web.pdf Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Kit contents: prototype board
Type of accessories for development kits: expansion board
development kits accessories features: motion sensor
Connection: Pmod connector
Components: NCS36000
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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GBPC2508 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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GBPC2508W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
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PRISM1M-AR0830CSSC130110-GEVB ONSEMI Category: Microchip development kits
Description: PRISM1M-AR0830CSSC130110-GEVB
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2+490.79 EUR
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PRISM1M-AR1223NPSC130110-GEVB ONSEMI Category: Unclassified
Description: PRISM1M-AR1223NPSC130110-GEVB
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2+490.79 EUR
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MC33274ADR2G MC33274ADR2G ONSEMI MC3327xA.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
auf Bestellung 1069 Stücke:
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72+1 EUR
76+0.94 EUR
101+0.71 EUR
115+0.63 EUR
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MC33274ADTBR2G ONSEMI mc33272a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Produkt ist nicht verfügbar
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MC7812ACD2TR4G MC7812ACD2TR4G ONSEMI MC78xx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: 0...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Produkt ist nicht verfügbar
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MC7812ABD2TR4G MC7812ABD2TR4G ONSEMI MC78xx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
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ESD5581N2T5G ONSEMI esd5581-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.2÷7.5V; bidirectional; X2DFN2; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.2...7.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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MC33262PG MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
auf Bestellung 69 Stücke:
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52+1.39 EUR
69+1.03 EUR
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MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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MC74HC597ADR2G MC74HC597ADR2G ONSEMI MC74HC597A-D.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 13
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FOD4216 FOD4216 ONSEMI FOD420.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
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FOD4216SD ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
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FOD4216SDV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216SV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216TV ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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FOD4216V ONSEMI fod4218-d.pdf Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
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2N5686G ONSEMI 2n5684-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
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2N5684G ONSEMI 2n5684-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
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2SD1802T-TL-E ONSEMI 2sb1202-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
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MJ15025G MJ15025G ONSEMI MJ15023G.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
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MJ15023G MJ15023G ONSEMI MJ15023G.PDF description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 16A
Collector-emitter voltage: 200V
Frequency: 4MHz
Produkt ist nicht verfügbar
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MJ15015G MJ15015G ONSEMI MJ15015G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Frequency: 6MHz
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15+4.92 EUR
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MJ15016G ONSEMI 2n3055a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Produkt ist nicht verfügbar
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D45H11G D45H11G ONSEMI d44h-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 116 Stücke:
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61+1.17 EUR
106+0.67 EUR
116+0.61 EUR
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2SC5569-TD-E 2SC5569-TD-E ONSEMI en6309-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
auf Bestellung 324 Stücke:
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59+1.23 EUR
143+0.5 EUR
174+0.41 EUR
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2SC5566-TD-E 2SC5566-TD-E ONSEMI en6307-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
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72+1 EUR
115+0.62 EUR
156+0.46 EUR
177+0.41 EUR
500+0.33 EUR
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SBAT54T1G SBAT54T1G ONSEMI bat54t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.4W
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358+0.2 EUR
424+0.17 EUR
651+0.11 EUR
921+0.078 EUR
1064+0.067 EUR
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SBAT54XV2T1G SBAT54XV2T1G ONSEMI bat54xv2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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30+2.39 EUR
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NSVBAT54HT1G ONSEMI bat54ht1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2999 Stücke:
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625+0.11 EUR
893+0.08 EUR
1078+0.066 EUR
1389+0.051 EUR
1839+0.039 EUR
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MJF44H11G MJF44H11G ONSEMI MJF44H11G-DTE.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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56+1.29 EUR
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MJB44H11G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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MJB44H11T4G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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KSE44H11 ONSEMI KSE44H.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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NJW44H11G ONSEMI njw44h11-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G ONSEMI mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N3442G 2N3442G ONSEMI 2N3442.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Produkt ist nicht verfügbar
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FQPF11N40C FQPF11N40C ONSEMI FAIRS45968-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14520BDWR2G ONSEMI MC14518B-D.pdf Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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2SA1774T1G 2SA1774T1G ONSEMI 2SA1774.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 140MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 367 Stücke:
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367+0.2 EUR
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S2SA1774G ONSEMI 2sa1774-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCV333ASN2T1G NCV333ASN2T1G ONSEMI ncs333-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
auf Bestellung 2815 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
130+0.55 EUR
148+0.48 EUR
155+0.46 EUR
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FQPF19N20C fqpf19n20c-d.pdf
FQPF19N20C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 999 Stücke:
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AnzahlPreis
32+2.29 EUR
40+1.79 EUR
46+1.56 EUR
62+1.16 EUR
100+1.06 EUR
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FQD13N06LTM FQD13N06L.pdf
FQD13N06LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2023 Stücke:
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75+0.96 EUR
120+0.6 EUR
141+0.51 EUR
176+0.41 EUR
250+0.4 EUR
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FQP6N80C FQP6N80C.pdf
FQP6N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Power dissipation: 158W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
auf Bestellung 141 Stücke:
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AnzahlPreis
23+3.17 EUR
29+2.5 EUR
33+2.19 EUR
50+1.64 EUR
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FQB5N90TM FQB5N90.pdf
FQB5N90TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 709 Stücke:
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23+3.23 EUR
25+2.92 EUR
27+2.72 EUR
30+2.43 EUR
50+2.2 EUR
100+2.19 EUR
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FQP45N15V2 FQP45N15V2.pdf
FQP45N15V2
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
Mounting: THT
Case: TO220AB
Polarisation: unipolar
Drain current: 31A
Drain-source voltage: 150V
Gate-source voltage: ±30V
Gate charge: 94nC
On-state resistance: 40mΩ
Power dissipation: 220W
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: QFET®
auf Bestellung 85 Stücke:
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22+3.32 EUR
36+2.02 EUR
50+1.77 EUR
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FQB55N10TM FQB55N10.pdf
FQB55N10TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 237 Stücke:
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24+3 EUR
31+2.36 EUR
34+2.16 EUR
38+1.9 EUR
50+1.73 EUR
100+1.69 EUR
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FQB19N20LTM FQB19N20L.pdf
FQB19N20LTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 84A
auf Bestellung 620 Stücke:
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32+2.26 EUR
45+1.62 EUR
52+1.4 EUR
58+1.24 EUR
100+1.22 EUR
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FQD6N40CTM FQD6N40C.pdf
FQD6N40CTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1459 Stücke:
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51+1.42 EUR
59+1.22 EUR
68+1.06 EUR
100+0.83 EUR
250+0.8 EUR
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FQP11N40C FQP11N40C.pdf
FQP11N40C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
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33+2.17 EUR
37+1.94 EUR
44+1.64 EUR
50+1.56 EUR
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FQD9N25TM-F080 ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw
FQD9N25TM-F080
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
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MC7905CTG description MC7900-D.PDF
MC7905CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; TO220AB; THT; MC7900
Manufacturer series: MC7900
Operating temperature: 0...125°C
Case: TO220AB
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Mounting: THT
Output voltage: -5V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Number of channels: 1
Voltage drop: 1.3V
Tolerance: ±4%
Kind of package: tube
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
120+0.6 EUR
164+0.44 EUR
180+0.4 EUR
193+0.37 EUR
205+0.35 EUR
250+0.32 EUR
Mindestbestellmenge: 120 Stücke
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NV24C512MUW3VTBG NV24C512MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Operating temperature: -40...125°C
Access time: 0.4ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 1MHz
Produkt ist nicht verfügbar
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CAV24C512YE-GT3 CAV24C512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Memory organisation: 64kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Operating temperature: -40...125°C
Access time: 400ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SA5534ADR2G ne5534-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; ±3÷20VDC; SO8; 2mV
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: SO8
Integrated circuit features: low noise
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Input offset current: 200nA
Input bias current: 0.8µA
Input offset voltage: 2mV
Voltage supply range: ± 3...20V DC
Slew rate: 13V/μs
Bandwidth: 10MHz
Produkt ist nicht verfügbar
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NCP1597AMNTWG ncp1597-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4÷5.5V; DFN6; buck
Type of integrated circuit: PMIC
Input voltage: 4...5.5V
Output current: 2A
Frequency: 0.87...1.13MHz
Mounting: SMD
Case: DFN6
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MJ802G mj802-d.pdf
MJ802GMJ802G
MJ802GMJ802G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
9+8.57 EUR
11+7.01 EUR
12+6.26 EUR
50+6.08 EUR
Mindestbestellmenge: 9 Stücke
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PIR-GEVB PIR-GEVB_Web.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCS36000
Kit contents: prototype board
Type of accessories for development kits: expansion board
development kits accessories features: motion sensor
Connection: Pmod connector
Components: NCS36000
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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GBPC2508 GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
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GBPC2508W GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
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PRISM1M-AR0830CSSC130110-GEVB
Hersteller: ONSEMI
Category: Microchip development kits
Description: PRISM1M-AR0830CSSC130110-GEVB
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+490.79 EUR
Mindestbestellmenge: 2 Stücke
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PRISM1M-AR1223NPSC130110-GEVB
Hersteller: ONSEMI
Category: Unclassified
Description: PRISM1M-AR1223NPSC130110-GEVB
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+490.79 EUR
Mindestbestellmenge: 2 Stücke
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MC33274ADR2G MC3327xA.PDF
MC33274ADR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
auf Bestellung 1069 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
72+1 EUR
76+0.94 EUR
101+0.71 EUR
115+0.63 EUR
Mindestbestellmenge: 72 Stücke
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MC33274ADTBR2G mc33272a-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; Ch: 4; ±1.5÷18VDC,3÷36VDC; 1.8mV
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 10V/μs
Input offset voltage: 1.8mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Produkt ist nicht verfügbar
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MC7812ACD2TR4G MC78xx.pdf
MC7812ACD2TR4G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: 0...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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MC7812ABD2TR4G MC78xx.pdf
MC7812ABD2TR4G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 14.8...27V
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output current: 1A
Voltage drop: 2V
Tolerance: ±2%
Output voltage: 12V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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ESD5581N2T5G esd5581-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.2÷7.5V; bidirectional; X2DFN2; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.2...7.5V
Semiconductor structure: bidirectional
Produkt ist nicht verfügbar
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MC33262PG description mc34262-d.pdf
MC33262PG
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
52+1.39 EUR
69+1.03 EUR
Mindestbestellmenge: 52 Stücke
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MC33262DR2G mc34262-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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MC74HC597ADR2G MC74HC597A-D.pdf
MC74HC597ADR2G
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SOIC16; HC; HC; -55÷125°C; 2÷6VDC; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 13
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FOD4216 FOD420.pdf
FOD4216
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; DIP6; Ch: 1; FOD4216; t(on): 60us
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Mounting: THT
Kind of output: triac; without zero voltage crossing driver
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FOD4216SD fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FOD4216SDV fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; reel,tape
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: reel; tape
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FOD4216SV fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; SMT6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: SMT6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: SMD
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FOD4216TV fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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FOD4216V fod4218-d.pdf
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD4216; tube
Turn-on time: 60µs
Trigger current: 1.3mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 600V
Insulation voltage: 5kV
Case: DIP6
Manufacturer series: FOD4216
Type of optocoupler: optotriac
Kind of package: tube
Mounting: THT
Kind of output: triac
Conform to the norm: VDE
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2N5686G 2n5684-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
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2N5684G 2n5684-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
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2SD1802T-TL-E 2sb1202-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1W; DPAK
Mounting: SMD
Power dissipation: 1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...400
Frequency: 150MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: NPN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MJ15025G description MJ15023G.PDF
MJ15025G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Produkt ist nicht verfügbar
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MJ15023G description MJ15023G.PDF
MJ15023G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 200V; 16A; 250W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 250W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 16A
Collector-emitter voltage: 200V
Frequency: 4MHz
Produkt ist nicht verfügbar
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MJ15015G MJ15015G.PDF
MJ15015G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 15A; 180W; TO3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 180W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Frequency: 6MHz
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
11+6.68 EUR
15+4.92 EUR
Mindestbestellmenge: 11 Stücke
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MJ15016G 2n3055a-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 15A; 115W; TO3
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 115W
Case: TO3
Mounting: THT
Kind of package: in-tray
Collector current: 15A
Collector-emitter voltage: 120V
Produkt ist nicht verfügbar
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D45H11G d44h-d.pdf
D45H11G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
61+1.17 EUR
106+0.67 EUR
116+0.61 EUR
Mindestbestellmenge: 61 Stücke
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2SC5569-TD-E en6309-d.pdf
2SC5569-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 7A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 7A
Power dissipation: 1.3W
Case: SOT89
Current gain: 560...200
Mounting: SMD
Kind of package: reel; tape
Frequency: 330MHz
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
59+1.23 EUR
143+0.5 EUR
174+0.41 EUR
Mindestbestellmenge: 59 Stücke
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2SC5566-TD-E en6307-d.pdf
2SC5566-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4A; 1.3W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 1.3W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
72+1 EUR
115+0.62 EUR
156+0.46 EUR
177+0.41 EUR
500+0.33 EUR
Mindestbestellmenge: 72 Stücke
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SBAT54T1G bat54t1-d.pdf
SBAT54T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.4W
auf Bestellung 1203 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
358+0.2 EUR
424+0.17 EUR
651+0.11 EUR
921+0.078 EUR
1064+0.067 EUR
Mindestbestellmenge: 358 Stücke
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SBAT54XV2T1G bat54xv2t1-d.pdf
SBAT54XV2T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.39 EUR
Mindestbestellmenge: 30 Stücke
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NSVBAT54HT1G bat54ht1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
625+0.11 EUR
893+0.08 EUR
1078+0.066 EUR
1389+0.051 EUR
1839+0.039 EUR
Mindestbestellmenge: 625 Stücke
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MJF44H11G MJF44H11G-DTE.PDF
MJF44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.66 EUR
56+1.29 EUR
Mindestbestellmenge: 27 Stücke
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MJB44H11G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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MJB44H11T4G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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KSE44H11 KSE44H.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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NJW44H11G njw44h11-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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2N3442G 2N3442.PDF
2N3442G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
Produkt ist nicht verfügbar
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FQPF11N40C FAIRS45968-1.pdf?t.download=true&u=5oefqw
FQPF11N40C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 44W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 44W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC14520BDWR2G MC14518B-D.pdf
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB
Type of integrated circuit: digital
Kind of integrated circuit: binary up counter
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16WB
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2SA1774T1G 2SA1774.PDF
2SA1774T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 140MHz
Polarisation: bipolar
Type of transistor: PNP
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
367+0.2 EUR
Mindestbestellmenge: 367 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S2SA1774G 2sa1774-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.15W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NCV333ASN2T1G ncs333-d.pdf
NCV333ASN2T1G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5
Type of integrated circuit: operational amplifier
Bandwidth: 350kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.15V/μs
Integrated circuit features: zero-drift
Input offset voltage: 30µV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 400pA
auf Bestellung 2815 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
99+0.73 EUR
130+0.55 EUR
148+0.48 EUR
155+0.46 EUR
Mindestbestellmenge: 99 Stücke
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