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| MBRF30L60CTG | ONSEMI |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.73V Max. load current: 30A Max. forward impulse current: 0.24kA Kind of package: tube |
Produkt ist nicht verfügbar |
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| ULQ2003ADR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Case: SO16 Output voltage: 50V Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Number of channels: 7 Input voltage: 30V Kind of integrated circuit: darlington; transistor array Output current: 0.5A |
Produkt ist nicht verfügbar |
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| MUR480ERLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 4A; reel,tape; Ifsm: 70A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 70A Case: DO201AD Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
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MC74HC11ADTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 40µA Technology: CMOS |
auf Bestellung 337 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC112ADG | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; tube Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO16 Supply voltage: 2...6V DC Kind of package: tube Operating temperature: -55...125°C Kind of integrated circuit: JK flip-flop Manufacturer series: HC Trigger: negative-edge-triggered Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74HC112ADR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; reel,tape Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO16 Supply voltage: 2...6V DC Kind of package: reel; tape Operating temperature: -55...125°C Kind of integrated circuit: JK flip-flop Manufacturer series: HC Trigger: negative-edge-triggered Technology: CMOS |
Produkt ist nicht verfügbar |
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| MC74HC112ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; HC; SMD; TSSOP16; HC Type of integrated circuit: digital Number of channels: 2 Number of inputs: 5 Mounting: SMD Case: TSSOP16 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C Kind of integrated circuit: JK flip-flop Manufacturer series: HC Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74HC11ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: tube Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
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MC74HC11ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Type of integrated circuit: digital Kind of gate: AND Number of channels: triple; 3 Number of inputs: 3 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
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| MC74HC11ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: AND Number of channels: 3 Number of inputs: 3 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C Manufacturer series: HC Technology: CMOS |
Produkt ist nicht verfügbar |
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BZX84C43LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZBZX84C43ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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| SZBZX84C43LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
Produkt ist nicht verfügbar |
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| SZBZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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BZX84C51LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
auf Bestellung 5975 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZBZX84C51ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 51V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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| SZBZX84C51LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 51V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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BAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.75V Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
Produkt ist nicht verfügbar |
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MC33064P-5G | ONSEMI |
 Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: TO92 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Kind of package: bulk Number of channels: 1 |
auf Bestellung 1348 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33064D-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: SO8 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Number of channels: 1 |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Features of semiconductor devices: fast switching Power dissipation: 1.66W Kind of package: reel; tape |
auf Bestellung 2637 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 0.41V Kind of package: reel; tape Power dissipation: 0.225W Max. forward impulse current: 0.1A |
auf Bestellung 5838 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS7602S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 30/30A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 12/7.2mΩ Mounting: SMD Gate charge: 28/46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMS7620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 13/22A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 30/15.1mΩ Mounting: SMD Gate charge: 11/23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR460 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Kind of package: bulk Case: DO27 Reverse recovery time: 50ns Forward voltage at If: 1.25V Max. load current: 4A |
Produkt ist nicht verfügbar |
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BZX84C8V2LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.7µA |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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| FAN7393AMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Mounting: SMD Case: SO14 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 12...20V Output current: 2.5A Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MC74HC393ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Quiescent current: 160µA Kind of package: reel; tape Supply voltage: 2...6V DC Kind of integrated circuit: asynchronous counter Technology: CMOS; TTL Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
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| MC74HC393ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Supply voltage: 2...6V DC Kind of integrated circuit: 4-stage; binary ripple counter Technology: CMOS Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
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| 1N916B | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: bulk Max. forward impulse current: 4A Case: DO35 Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
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MC74VHC1G05DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of output: open drain Family: VHC |
Produkt ist nicht verfügbar |
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NTJS4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14490DWG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: contact bounce eliminator Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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MC14490DWR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: contact bounce eliminator; hex Number of channels: 1 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| MMBFJ177 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 1.5mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 300Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
Produkt ist nicht verfügbar |
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MOC3042M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Slew rate: 1kV/μs Manufacturer series: MOC304XM |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3042SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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| MOC3042VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
Produkt ist nicht verfügbar |
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FDA16N50-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
Produkt ist nicht verfügbar |
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| FDA16N50LDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
Produkt ist nicht verfügbar |
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FQAF16N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 1N4934RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 300ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1N4934G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MBR2035CT | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.95V Kind of package: tube Max. forward impulse current: 150A Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MBR2535CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.72V Kind of package: tube Max. forward impulse current: 150A Max. load current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MBR2535CTLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.41V Kind of package: tube Max. forward impulse current: 150A Max. load current: 25A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BAV99 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 8A Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
ISL9V5036S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 31A Power dissipation: 250W Case: D2PAK Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
FGB3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25.6A Power dissipation: 150W Case: D2PAK Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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| ISL9V5045S3ST-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 43A Power dissipation: 300W Case: D2PAK Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGB3245G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 27A Power dissipation: 150W Case: D2PAK Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD Gate-emitter voltage: ±10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGD3245G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FGD3440G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MBRF30L60CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ULQ2003ADR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Case: SO16
Output voltage: 50V
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Number of channels: 7
Input voltage: 30V
Kind of integrated circuit: darlington; transistor array
Output current: 0.5A
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Case: SO16
Output voltage: 50V
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Number of channels: 7
Input voltage: 30V
Kind of integrated circuit: darlington; transistor array
Output current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR480ERLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; Ifsm: 70A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO201AD
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; Ifsm: 70A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO201AD
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC11ADTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 40µA
Technology: CMOS
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 184+ | 0.39 EUR |
| 277+ | 0.26 EUR |
| 337+ | 0.21 EUR |
| MC74HC112ADG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Trigger: negative-edge-triggered
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Kind of package: tube
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Trigger: negative-edge-triggered
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC112ADR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Trigger: negative-edge-triggered
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; reel,tape
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO16
Supply voltage: 2...6V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Trigger: negative-edge-triggered
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC112ADTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; HC; SMD; TSSOP16; HC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; HC; SMD; TSSOP16; HC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: JK flip-flop
Manufacturer series: HC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC11ADG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC11ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC11ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: HC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: HC
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C43LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 873+ | 0.082 EUR |
| SZBZX84C43ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C43LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C47LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C47LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C47LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C51LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1220+ | 0.059 EUR |
| 2058+ | 0.035 EUR |
| 2891+ | 0.025 EUR |
| 3312+ | 0.022 EUR |
| 3379+ | 0.021 EUR |
| SZBZX84C51ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C51LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 51V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAV99LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33064P-5G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 134+ | 0.54 EUR |
| 149+ | 0.48 EUR |
| 171+ | 0.42 EUR |
| MC33064D-5G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Number of channels: 1
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 150+ | 0.48 EUR |
| 154+ | 0.46 EUR |
| ES3D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 2637 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 170+ | 0.42 EUR |
| 242+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| BAS70LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward impulse current: 0.1A
auf Bestellung 5838 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 820+ | 0.087 EUR |
| 1013+ | 0.071 EUR |
| 1129+ | 0.063 EUR |
| 1327+ | 0.054 EUR |
| 1534+ | 0.047 EUR |
| 1819+ | 0.039 EUR |
| 3000+ | 0.03 EUR |
| FDMS7602S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7620S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP075N15A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.13 EUR |
| 20+ | 3.72 EUR |
| 50+ | 3.29 EUR |
| MUR460 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C8V2LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 755+ | 0.094 EUR |
| FAN7393AMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC393ADR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Family: HC
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC393ADTR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Family: HC
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N916B |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; bulk; Ifsm: 4A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Max. forward impulse current: 4A
Case: DO35
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC1G05DTT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTJS4151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.44 EUR |
| MC14490DWG |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14490DWR2G |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBFJ177 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC304XM; 1kV/μs
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 1kV/μs
Manufacturer series: MOC304XM
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 116+ | 0.62 EUR |
| 135+ | 0.53 EUR |
| 151+ | 0.48 EUR |
| 167+ | 0.43 EUR |
| 500+ | 0.42 EUR |
| MOC3042SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3042SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC304XM
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| MOC3042SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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| MOC3042TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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| MOC3042VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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| FDA16N50-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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| FDA16N50LDTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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| FQAF16N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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| 1N4934RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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| 1N4934G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| MBR2035CT |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10Ax2; TO220AB; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.95V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 20A
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| MBR2535CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 30A
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| MBR2535CTLG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Kind of package: tube
Max. forward impulse current: 150A
Max. load current: 25A
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| BAV99 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
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| ISL9V5036S3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
auf Bestellung 693 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.72 EUR |
| 15+ | 4.78 EUR |
| 17+ | 4.25 EUR |
| 50+ | 3.49 EUR |
| FGB3040G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
auf Bestellung 717 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.25 EUR |
| 25+ | 2.92 EUR |
| 100+ | 2.72 EUR |
| 250+ | 2.7 EUR |
| ISL9V5045S3ST-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 43A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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| FGB3245G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 27A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 27A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 27A
Power dissipation: 150W
Case: D2PAK
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Gate-emitter voltage: ±10V
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| FGD3245G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| FGD3440G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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