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NCP731ADNADJR2G ONSEMI ncp731-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷35V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.2...35V
Output current: 0.15A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCP731ADN330R2G ONSEMI ncp731-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; MSOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCP731ADN500R2G ONSEMI ncp731-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC14051BDR2G MC14051BDR2G ONSEMI mc14051b-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 600µA
Kind of output: SP8T
Technology: CMOS
Produkt ist nicht verfügbar
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MC7808CTG ONSEMI mc7800-d.pdf description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; TO220AB; THT; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 8V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 11.5...24V
Manufacturer series: MC7800
auf Bestellung 400 Stücke:
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193+0.37 EUR
218+0.33 EUR
228+0.31 EUR
250+0.29 EUR
Mindestbestellmenge: 193
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SS26 SS26 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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SS26 SS26 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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FDB120N10 ONSEMI fdb120n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP120N10 ONSEMI fdp120n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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MM3Z18VST1G MM3Z18VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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SZMM3Z18VST1G SZMM3Z18VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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NV25512MUW3VTBG ONSEMI NV25512MUW-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 45ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512YI-GT3 ONSEMI CAT25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512HU5I-GT3 ONSEMI CAT25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAT25512VI-GT3 CAT25512VI-GT3 ONSEMI cat25512.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Case: SO8
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
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CAV25512VE-GT3 ONSEMI CAV25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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CAV25512YE-GT3 ONSEMI CAV25512-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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NTB011N15MC ONSEMI ntb011n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
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NVVR26A120M1WST ONSEMI nvvr26a120m1wst-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSB ONSEMI nvvr26a120m1wsb-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSS ONSEMI nvvr26a120m1wss-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NCP600SN330T1G ONSEMI ncp600-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Produkt ist nicht verfügbar
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NCP600SNADJT1G ONSEMI ncp600-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Produkt ist nicht verfügbar
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1N5365BG 1N5365BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 523 Stücke:
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218+0.33 EUR
241+0.3 EUR
258+0.28 EUR
336+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 218
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1N5365BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5342BG 1N5342BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 800 Stücke:
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295+0.24 EUR
313+0.23 EUR
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1N5346BRLG 1N5346BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
auf Bestellung 5982 Stücke:
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178+0.4 EUR
199+0.36 EUR
305+0.23 EUR
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1N5353BG 1N5353BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
auf Bestellung 1468 Stücke:
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162+0.44 EUR
208+0.34 EUR
257+0.28 EUR
283+0.25 EUR
323+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 162
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1N5381BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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NTMFS5H431NLT1G ONSEMI ntmfs5h431nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJE15030 MJE15030 ONSEMI MJE15030.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJE15031G MJE15031G ONSEMI MJE15031G.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
auf Bestellung 403 Stücke:
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36+1.99 EUR
61+1.17 EUR
62+1.16 EUR
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MJD44H11T4G MJD44H11T4G ONSEMI MJD44H11_MJD45H11.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
auf Bestellung 2379 Stücke:
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64+1.13 EUR
93+0.77 EUR
108+0.66 EUR
132+0.54 EUR
152+0.47 EUR
500+0.35 EUR
1000+0.34 EUR
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MJD44H11G MJD44H11G ONSEMI MJD44H11_MJD45H11.PDF description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
auf Bestellung 197 Stücke:
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50+1.46 EUR
99+0.73 EUR
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MJD44H11RLG MJD44H11RLG ONSEMI MJD44H11_MJD45H11.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1668 Stücke:
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50+1.46 EUR
68+1.05 EUR
84+0.86 EUR
98+0.74 EUR
100+0.73 EUR
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NJVMJD44H11RLG NJVMJD44H11RLG ONSEMI MJD44H11_MJD45H11.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
auf Bestellung 1549 Stücke:
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67+1.07 EUR
90+0.8 EUR
132+0.54 EUR
500+0.5 EUR
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MJD44H11-1G MJD44H11-1G ONSEMI MJD44H11-1G.PDF MJD44H11_MJD45H11.PDF description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJD44H11G ONSEMI mjd44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
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NJVMJD44H11T4G ONSEMI mjd44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
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D44H11G D44H11G ONSEMI D44H8G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 265 Stücke:
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50+1.43 EUR
80+0.9 EUR
109+0.66 EUR
111+0.64 EUR
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MJF44H11G MJF44H11G ONSEMI MJF44H11G-DTE.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 13 Stücke:
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MJB44H11T4G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
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MJB44H11G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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KSE44H11 ONSEMI KSE44H.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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NJW44H11G ONSEMI njw44h11-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G ONSEMI mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MJD45H11T4G MJD45H11T4G ONSEMI MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
88+0.82 EUR
106+0.68 EUR
123+0.58 EUR
142+0.5 EUR
500+0.37 EUR
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MJD45H11G MJD45H11G ONSEMI MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
78+0.92 EUR
94+0.76 EUR
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MJF45H11G MJF45H11G ONSEMI MJF44H11G-DTE.PDF Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
auf Bestellung 104 Stücke:
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33+2.17 EUR
38+1.9 EUR
52+1.4 EUR
53+1.36 EUR
Mindestbestellmenge: 33
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D45H11G ONSEMI d44h-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
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MJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Produkt ist nicht verfügbar
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MJB45H11G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Produkt ist nicht verfügbar
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MJB45H11T4G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Produkt ist nicht verfügbar
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MJD45H11-1G MJD45H11-1G ONSEMI MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
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NJVMJB45H11T4G ONSEMI mjb44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
Produkt ist nicht verfügbar
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NJVMJD45H11G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Produkt ist nicht verfügbar
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NJVMJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Produkt ist nicht verfügbar
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NJVMJD45H11T4G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Produkt ist nicht verfügbar
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FDB024N08BL7 ONSEMI fdb024n08bl7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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FDMA1024NZ ONSEMI fdma1024nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
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NCP731ADNADJR2G ncp731-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷35V; 0.15A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.2...35V
Output current: 0.15A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCP731ADN330R2G ncp731-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; MSOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCP731ADN500R2G ncp731-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; MSOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.15A
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC14051BDR2G mc14051b-d.pdf
MC14051BDR2G
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 600µA
Kind of output: SP8T
Technology: CMOS
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MC7808CTG description mc7800-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; TO220AB; THT; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 8V
Output current: 1A
Case: TO220AB
Mounting: THT
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 11.5...24V
Manufacturer series: MC7800
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
218+0.33 EUR
228+0.31 EUR
250+0.29 EUR
Mindestbestellmenge: 193
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SS26 S210.pdf
SS26
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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SS26 S210.pdf
SS26
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape; 1.3W
Mounting: SMD
Max. forward voltage: 0.7V
Power dissipation: 1.3W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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FDB120N10 fdb120n10-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FDP120N10 fdp120n10-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MM3Z18VST1G MM3ZxxST1G.PDF
MM3Z18VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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SZMM3Z18VST1G MM3ZxxST1G.PDF
SZMM3Z18VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Produkt ist nicht verfügbar
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NV25512MUW3VTBG NV25512MUW-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 45ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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CAT25512YI-GT3 CAT25512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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CAT25512HU5I-GT3 CAT25512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Operating temperature: -40...85°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: uDFN8
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Clock frequency: 20MHz
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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CAT25512VI-GT3 cat25512.pdf
CAT25512VI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Case: SO8
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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CAV25512VE-GT3 CAV25512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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CAV25512YE-GT3 CAV25512-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Produkt ist nicht verfügbar
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NTB011N15MC ntb011n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
Produkt ist nicht verfügbar
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NVVR26A120M1WST nvvr26a120m1wst-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSB nvvr26a120m1wsb-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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NVVR26A120M1WSS nvvr26a120m1wss-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
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NCP600SN330T1G ncp600-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Produkt ist nicht verfügbar
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NCP600SNADJT1G ncp600-d.pdf
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Produkt ist nicht verfügbar
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1N5365BG 1N53xx.PDF
1N5365BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
241+0.3 EUR
258+0.28 EUR
336+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 218
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1N5365BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5342BG 1N53xx.PDF
1N5342BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
313+0.23 EUR
Mindestbestellmenge: 295
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1N5346BRLG description 1N53xx.PDF
1N5346BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
auf Bestellung 5982 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
178+0.4 EUR
199+0.36 EUR
305+0.23 EUR
Mindestbestellmenge: 162
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1N5353BG 1N53xx.PDF
1N5353BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
auf Bestellung 1468 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
208+0.34 EUR
257+0.28 EUR
283+0.25 EUR
323+0.22 EUR
500+0.21 EUR
Mindestbestellmenge: 162
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1N5381BRLG 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTMFS5H431NLT1G ntmfs5h431nl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MJE15030 MJE15030.PDF
MJE15030
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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MJE15031G MJE15031G.PDF
MJE15031G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
61+1.17 EUR
62+1.16 EUR
Mindestbestellmenge: 36
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MJD44H11T4G MJD44H11_MJD45H11.PDF
MJD44H11T4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
93+0.77 EUR
108+0.66 EUR
132+0.54 EUR
152+0.47 EUR
500+0.35 EUR
1000+0.34 EUR
Mindestbestellmenge: 64
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MJD44H11G description MJD44H11_MJD45H11.PDF
MJD44H11G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
99+0.73 EUR
Mindestbestellmenge: 50
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MJD44H11RLG MJD44H11_MJD45H11.PDF
MJD44H11RLG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
68+1.05 EUR
84+0.86 EUR
98+0.74 EUR
100+0.73 EUR
Mindestbestellmenge: 50
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NJVMJD44H11RLG MJD44H11_MJD45H11.PDF
NJVMJD44H11RLG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
auf Bestellung 1549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
90+0.8 EUR
132+0.54 EUR
500+0.5 EUR
Mindestbestellmenge: 67
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MJD44H11-1G description MJD44H11-1G.PDF MJD44H11_MJD45H11.PDF
MJD44H11-1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD44H11G mjd44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD44H11T4G mjd44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Produkt ist nicht verfügbar
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D44H11G D44H8G.PDF
D44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
80+0.9 EUR
109+0.66 EUR
111+0.64 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MJF44H11G MJF44H11G-DTE.PDF
MJF44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
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MJB44H11T4G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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KSE44H11 KSE44H.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Produkt ist nicht verfügbar
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NJW44H11G njw44h11-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Produkt ist nicht verfügbar
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NJVMJB44H11T4G mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MJD45H11T4G description MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF
MJD45H11T4G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
88+0.82 EUR
106+0.68 EUR
123+0.58 EUR
142+0.5 EUR
500+0.37 EUR
Mindestbestellmenge: 64
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MJD45H11G description MJD44H11_MJD45H11.PDF
MJD45H11G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
78+0.92 EUR
94+0.76 EUR
Mindestbestellmenge: 47
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MJF45H11G MJF44H11G-DTE.PDF
MJF45H11G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
38+1.9 EUR
52+1.4 EUR
53+1.36 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
D45H11G d44h-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
Produkt ist nicht verfügbar
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MJD45H11RLG mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJB45H11G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJB45H11T4G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Produkt ist nicht verfügbar
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MJD45H11-1G description MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF
MJD45H11-1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Frequency: 90MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJB45H11T4G mjb44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11G mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11RLG mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11T4G mjd44h11-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 20W
Produkt ist nicht verfügbar
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FDB024N08BL7 fdb024n08bl7-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
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FDMA1024NZ fdma1024nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
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