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SBAV99LT3G SBAV99LT3G ONSEMI bav99lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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1N5231BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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LM2575T-3.3G LM2575T-3.3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 41 Stücke:
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23+3.13 EUR
35+2.07 EUR
Mindestbestellmenge: 23
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LM2575TV-ADJG ONSEMI lm2575-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
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MMSZ5248B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMBD1204 MMBD1204 ONSEMI ONSM-S-A0003587619-1.pdf?t.download=true&u=5oefqw Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 1180 Stücke:
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313+0.23 EUR
496+0.14 EUR
725+0.099 EUR
854+0.084 EUR
1051+0.068 EUR
1180+0.06 EUR
Mindestbestellmenge: 313
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NVTFS003N04CTAG ONSEMI nvtfs003n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS027N10MCLTAG ONSEMI nvtfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SC3646S-TD-E 2SC3646S-TD-E ONSEMI 2sa1416jp-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
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S3M S3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
auf Bestellung 2620 Stücke:
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120+0.6 EUR
170+0.42 EUR
230+0.31 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 120
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1N5360BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5360BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NJL0281DG ONSEMI njl0281d-d.pdf Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
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NCP11187A065PG ONSEMI ncp11184-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
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NCP11187A100PG ONSEMI ncp11184-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
Produkt ist nicht verfügbar
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FFSP3065A FFSP3065A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 2.4V
Type of diode: Schottky rectifying
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Max. forward impulse current: 150A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Leakage current: 0.6mA
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FFSP3065B ONSEMI ffsp3065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 1.7V
Type of diode: Schottky rectifying
Load current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
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MC74VHCT138ADTRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2B60D3&compId=MC74VHCT138A-D.pdf?ci_sign=3abfdf0569c893dab664b8bd62ba19e1777908c4 Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Manufacturer series: VHCT
Number of inputs: 6
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
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MGSF1N03LT1G MGSF1N03LT1G ONSEMI mgsf1n03lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 2893 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
388+0.18 EUR
468+0.15 EUR
506+0.14 EUR
550+0.13 EUR
596+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 278
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4N27M 4N27M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
auf Bestellung 699 Stücke:
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100+0.72 EUR
158+0.45 EUR
214+0.33 EUR
250+0.29 EUR
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4N35M 4N35M ONSEMI 4N25M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 27 Stücke:
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27+2.65 EUR
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NCP2809BDMR2G ONSEMI ncp2809-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 135mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: Micro10
Integrated circuit features: headphone driver; stereo
Mounting: SMD
Kind of package: reel; tape
Output power: 135mW
Supply voltage: 2.2...5.5V DC
Impedance: 16Ω
Amplifier class: AB
Produkt ist nicht verfügbar
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NCP2811ADTBR2G NCP2811ADTBR2G ONSEMI ncp2811-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
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NCP2811BFCCT1G ONSEMI ncp2811-d.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: flip chip12
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
Produkt ist nicht verfügbar
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MM3Z24VST1G MM3Z24VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 5659 Stücke:
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625+0.11 EUR
926+0.077 EUR
1112+0.064 EUR
1471+0.049 EUR
2213+0.032 EUR
3247+0.022 EUR
3497+0.02 EUR
Mindestbestellmenge: 625
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QRE1113GR ONSEMI qre1113-d.pdf Category: Sensors and Transducers - Unclassified
Description: QRE1113GR
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.4 EUR
Mindestbestellmenge: 1000
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NRVTSM245ET1G ONSEMI nrvtsm245e-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: POWERMITE
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NRVTSM245ET3G ONSEMI nrvtsm245e-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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NXH040F120MNF1PG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040F120MNF1PTG ONSEMI nxh040f120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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NXH040P120MNF1PG ONSEMI nxh040p120mnf1-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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1N5358BG 1N5358BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5358BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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FFSM0665A ONSEMI ffsm0665a-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 8A
Max. off-state voltage: 650V
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DF02S DF02S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7260C3387C469&compId=DF02S.pdf?ci_sign=48949b444762c71e9cdc44b798ffa8b849b255f3 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2076 Stücke:
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76+0.94 EUR
128+0.56 EUR
208+0.34 EUR
220+0.33 EUR
1000+0.32 EUR
1500+0.31 EUR
Mindestbestellmenge: 76
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74ACT00MTCX 74ACT00MTCX ONSEMI 74ACT00-D.PDF FAIRS25987-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
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MC74ACT00DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629562E3400D3&compId=MC74AC00-D.pdf?ci_sign=51d2f67f322eb4c4311290c02a289336628276d2 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
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MC74ACT00DTR2G MC74ACT00DTR2G ONSEMI mc74ac00-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
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CAT4004AHU2-GT3 ONSEMI cat4002a-d.pdf Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Case: uDFN8
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FDB3652 FDB3652 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDE6A504471E28&compId=FDB3652.pdf?ci_sign=75280f79b06b2631fc6d825e841c33c9777df444 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 389 Stücke:
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30+2.4 EUR
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41+1.74 EUR
100+1.59 EUR
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MC74LCX158DTG MC74LCX158DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD0A0D3&compId=MC74LCX158-D.pdf?ci_sign=5030d09773aa6b9bc29afd34d3a303516a47faf9 Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Integrated circuit features: tolerates a voltage of 5V on the inputs
auf Bestellung 192 Stücke:
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84+0.85 EUR
102+0.71 EUR
113+0.64 EUR
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MC74LCX158DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD1E0D3&compId=MC74LCX158-D.pdf?ci_sign=6bb82943c7f76d3afc41de5872d8033ace8705f2 Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: tolerates a voltage of 5V on the inputs
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BD678G BD678G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB652DBE846469&compId=BD678G.PDF?ci_sign=b4353895d13d0aeb9874ee18fd27b2bae8644daa Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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HCPL0600 HCPL0600 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C01FD74AD00D6&compId=HCPL0600.pdf?ci_sign=a4f6fa214650e375b0cc99272115e12f4a9ab590 Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Output voltage: 7V
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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NTA4153NT1G NTA4153NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A09F50BAA0745&compId=NTA4153N.PDF?ci_sign=e21734cf39a2d99c197db01f4643ddbc77046164 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 0.915A
Gate charge: 1.82nC
Power dissipation: 0.3W
On-state resistance: 0.95Ω
Gate-source voltage: ±6V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
auf Bestellung 2413 Stücke:
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295+0.24 EUR
338+0.21 EUR
479+0.15 EUR
560+0.13 EUR
824+0.087 EUR
1000+0.081 EUR
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DAN222T1G DAN222T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E96CEAD577A0CE&compId=DAN222.PDF?ci_sign=de5bb0c14bbe3cea9c18dfa8dc9629b8811f7110 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
auf Bestellung 2964 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
910+0.079 EUR
1413+0.051 EUR
1938+0.037 EUR
2203+0.032 EUR
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DAP222T1G DAP222T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E9619BF82840CE&compId=DAP222.PDF?ci_sign=5cba25a3f7a32287a337c7f229178e886b713484 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
auf Bestellung 5470 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1021+0.07 EUR
1191+0.06 EUR
1673+0.043 EUR
2223+0.032 EUR
2428+0.029 EUR
Mindestbestellmenge: 625
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NSVDAP222T1G ONSEMI Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: switching
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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NCP1380CDR2G NCP1380CDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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NCP1380DDR2G NCP1380DDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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FDD13AN06A0 FDD13AN06A0 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE557EF911FE28&compId=FDD13AN06A0.pdf?ci_sign=2b58636c22c4a3e8d858385b4b8d526546c519d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2610 Stücke:
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34+2.13 EUR
41+1.74 EUR
47+1.53 EUR
53+1.37 EUR
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NTB190N65S3HF ONSEMI ntb190n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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FCP190N65F ONSEMI fcp190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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NVB190N65S3F ONSEMI nvb190n65s3f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCH190N65F-F155 ONSEMI fch190n65f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCP190N65S3 ONSEMI fcp190n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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FCP190N65S3R0 ONSEMI fcp190n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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NTPF190N65S3HF ONSEMI ntpf190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTHL190N65S3HF ONSEMI nthl190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTMT190N65S3H ONSEMI ntmt190n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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SBAV99LT3G bav99lt1-d.pdf
SBAV99LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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1N5231BTR 1N52xxB.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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LM2575T-3.3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
LM2575T-3.3G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.13 EUR
35+2.07 EUR
Mindestbestellmenge: 23
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LM2575TV-ADJG lm2575-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MMSZ5248B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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MMBD1204 ONSM-S-A0003587619-1.pdf?t.download=true&u=5oefqw
MMBD1204
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
auf Bestellung 1180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
496+0.14 EUR
725+0.099 EUR
854+0.084 EUR
1051+0.068 EUR
1180+0.06 EUR
Mindestbestellmenge: 313
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NVTFS003N04CTAG nvtfs003n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS027N10MCLTAG nvtfs027n10mcl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 119A; 23W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 119A
Power dissipation: 23W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2SC3646S-TD-E 2sa1416jp-d.pdf
2SC3646S-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT89
Power dissipation: 0.5W
Collector current: 1A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Produkt ist nicht verfügbar
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S3M pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFC7B91ED14745&compId=S3A.pdf?ci_sign=4cb59c823e1cdd51a4b5ea04ea7f6d2110e07cfe
S3M
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMC; Ifsm: 100A; 2.6W; reel,tape
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.6W
auf Bestellung 2620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
170+0.42 EUR
230+0.31 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
1N5360BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5360BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NJL0281DG njl0281d-d.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Power dissipation: 180W
Case: TO264-5
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 260V
Frequency: 30MHz
Current gain: 75...150
Pulsed collector current: 25A
Produkt ist nicht verfügbar
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NCP11187A065PG ncp11184-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 62...68kHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP11187A100PG ncp11184-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 7.8÷26VDC
Case: DIP7
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
On-state resistance: 0.87Ω
Number of channels: 1
Operating voltage: 7.8...26V DC
Kind of integrated circuit: AC/DC switcher; PWM controller
Frequency: 95...105kHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSP3065A pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E9F0BD9FFB20CE&compId=FFSP3065A.pdf?ci_sign=ae6f21021727f98b886609f3ebf329b4107f5380
FFSP3065A
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; Ir: 600uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 2.4V
Type of diode: Schottky rectifying
Load current: 30A
Power dissipation: 40W
Max. load current: 75A
Max. forward impulse current: 150A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Leakage current: 0.6mA
Produkt ist nicht verfügbar
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FFSP3065B ffsp3065b-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO220-2; tube
Case: TO220-2
Mounting: THT
Kind of package: tube
Technology: SiC
Max. forward voltage: 1.7V
Type of diode: Schottky rectifying
Load current: 30A
Semiconductor structure: single diode
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHCT138ADTRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2B60D3&compId=MC74VHCT138A-D.pdf?ci_sign=3abfdf0569c893dab664b8bd62ba19e1777908c4
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS,TTL; SMD; VHCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: VHCT
Operating temperature: -55...125°C
Manufacturer series: VHCT
Number of inputs: 6
Kind of package: reel; tape
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
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MGSF1N03LT1G mgsf1n03lt1-d.pdf
MGSF1N03LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.1A; 690mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.1A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 2893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
388+0.18 EUR
468+0.15 EUR
506+0.14 EUR
550+0.13 EUR
596+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
4N27M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909D20D6&compId=4N28SM.pdf?ci_sign=ed637c7f915caf5e5a41a50bcb81f787e3204cdd pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C000B909A80D6&compId=4N27M.pdf?ci_sign=07a7839052f421564c7f9d69000e0018c75e712a
4N27M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
auf Bestellung 699 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
158+0.45 EUR
214+0.33 EUR
250+0.29 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
4N35M 4N25M-ONS.pdf
4N35M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-off time: 2µs
Turn-on time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
NCP2809BDMR2G ncp2809-d.pdf
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 135mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: Micro10
Integrated circuit features: headphone driver; stereo
Mounting: SMD
Kind of package: reel; tape
Output power: 135mW
Supply voltage: 2.2...5.5V DC
Impedance: 16Ω
Amplifier class: AB
Produkt ist nicht verfügbar
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NCP2811ADTBR2G ncp2811-d.pdf
NCP2811ADTBR2G
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; TSSOP14
Type of integrated circuit: audio amplifier
Case: TSSOP14
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP2811BFCCT1G ncp2811-d.pdf
Hersteller: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 27mW; headphone driver,stereo; 16Ω
Type of integrated circuit: audio amplifier
Case: flip chip12
Integrated circuit features: headphone driver; stereo
Manufacturer series: NOCAP™ LongPlay
Mounting: SMD
Kind of package: reel; tape
Output power: 27mW
Supply voltage: 2.7...5V DC
Impedance: 16Ω
Amplifier class: AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM3Z24VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z24VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 5659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
926+0.077 EUR
1112+0.064 EUR
1471+0.049 EUR
2213+0.032 EUR
3247+0.022 EUR
3497+0.02 EUR
Mindestbestellmenge: 625
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QRE1113GR qre1113-d.pdf
Hersteller: ONSEMI
Category: Sensors and Transducers - Unclassified
Description: QRE1113GR
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.4 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
NRVTSM245ET1G nrvtsm245e-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Case: POWERMITE
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NRVTSM245ET3G nrvtsm245e-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 45V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: POWERMITE
Mounting: SMD
Max. off-state voltage: 45V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. load current: 4A
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NXH040F120MNF1PG nxh040f120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NXH040P120MNF1PG nxh040p120mnf1-d.pdf
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
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1N5358BG 1N53xx.PDF
1N5358BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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1N5358BRLG description 1N53xx.PDF
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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FFSM0665A ffsm0665a-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PQFN8x8; SiC; SMD; 650V; 8A; reel,tape
Case: PQFN8x8
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 8A
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF02S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7260C3387C469&compId=DF02S.pdf?ci_sign=48949b444762c71e9cdc44b798ffa8b849b255f3
DF02S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 2076 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
128+0.56 EUR
208+0.34 EUR
220+0.33 EUR
1000+0.32 EUR
1500+0.31 EUR
Mindestbestellmenge: 76
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74ACT00MTCX 74ACT00-D.PDF FAIRS25987-1.pdf?t.download=true&u=5oefqw
74ACT00MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Produkt ist nicht verfügbar
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MC74ACT00DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629562E3400D3&compId=MC74AC00-D.pdf?ci_sign=51d2f67f322eb4c4311290c02a289336628276d2
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: TTL
Mounting: SMD
Case: SOIC14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: ACT
Manufacturer series: ACT
Produkt ist nicht verfügbar
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MC74ACT00DTR2G mc74ac00-d.pdf
MC74ACT00DTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Produkt ist nicht verfügbar
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CAT4004AHU2-GT3 cat4002a-d.pdf
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; 1-wire; uDFN8; 40mA; Ch: 4; 2.4÷5.5VDC; PWM
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: LED driver
Integrated circuit features: PWM
Operating temperature: -40...85°C
Output current: 40mA
Supply voltage: 2.4...5.5V DC
Number of channels: 4
Interface: 1-wire
Case: uDFN8
Produkt ist nicht verfügbar
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FDB3652 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDE6A504471E28&compId=FDB3652.pdf?ci_sign=75280f79b06b2631fc6d825e841c33c9777df444
FDB3652
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
30+2.4 EUR
35+2.1 EUR
41+1.74 EUR
100+1.59 EUR
Mindestbestellmenge: 24
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MC74LCX158DTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD0A0D3&compId=MC74LCX158-D.pdf?ci_sign=5030d09773aa6b9bc29afd34d3a303516a47faf9
MC74LCX158DTG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Integrated circuit features: tolerates a voltage of 5V on the inputs
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
84+0.85 EUR
102+0.71 EUR
113+0.64 EUR
Mindestbestellmenge: 79
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MC74LCX158DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62DEE1CD1E0D3&compId=MC74LCX158-D.pdf?ci_sign=6bb82943c7f76d3afc41de5872d8033ace8705f2
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,inverting; Ch: 4; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: inverting; multiplexer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Family: LCX
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Integrated circuit features: tolerates a voltage of 5V on the inputs
Produkt ist nicht verfügbar
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BD678G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB652DBE846469&compId=BD678G.PDF?ci_sign=b4353895d13d0aeb9874ee18fd27b2bae8644daa
BD678G
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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HCPL0600 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C01FD74AD00D6&compId=HCPL0600.pdf?ci_sign=a4f6fa214650e375b0cc99272115e12f4a9ab590
HCPL0600
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Output voltage: 7V
Turn-on time: 50ns
Turn-off time: 50ns
Produkt ist nicht verfügbar
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NTA4153NT1G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A09F50BAA0745&compId=NTA4153N.PDF?ci_sign=e21734cf39a2d99c197db01f4643ddbc77046164
NTA4153NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75; ESD
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 0.915A
Gate charge: 1.82nC
Power dissipation: 0.3W
On-state resistance: 0.95Ω
Gate-source voltage: ±6V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
auf Bestellung 2413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
295+0.24 EUR
338+0.21 EUR
479+0.15 EUR
560+0.13 EUR
824+0.087 EUR
1000+0.081 EUR
Mindestbestellmenge: 209
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DAN222T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E96CEAD577A0CE&compId=DAN222.PDF?ci_sign=de5bb0c14bbe3cea9c18dfa8dc9629b8811f7110
DAN222T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
auf Bestellung 2964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
910+0.079 EUR
1413+0.051 EUR
1938+0.037 EUR
2203+0.032 EUR
Mindestbestellmenge: 625
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DAP222T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94E9619BF82840CE&compId=DAP222.PDF?ci_sign=5cba25a3f7a32287a337c7f229178e886b713484
DAP222T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Type of diode: rectifying
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Capacitance: 3.5pF
Reverse recovery time: 4ns
Load current: 0.1A
Power dissipation: 0.15W
Max. forward impulse current: 2A
Max. load current: 0.3A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
auf Bestellung 5470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1021+0.07 EUR
1191+0.06 EUR
1673+0.043 EUR
2223+0.032 EUR
2428+0.029 EUR
Mindestbestellmenge: 625
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NSVDAP222T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Case: SC75
Mounting: SMD
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Application: automotive industry
Semiconductor structure: common cathode; double
Type of diode: switching
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Produkt ist nicht verfügbar
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NCP1380CDR2G ncp1380-d.pdf
NCP1380CDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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NCP1380DDR2G ncp1380-d.pdf
NCP1380DDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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FDD13AN06A0 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE557EF911FE28&compId=FDD13AN06A0.pdf?ci_sign=2b58636c22c4a3e8d858385b4b8d526546c519d4
FDD13AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
41+1.74 EUR
47+1.53 EUR
53+1.37 EUR
Mindestbestellmenge: 34
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NTB190N65S3HF ntb190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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FCP190N65F fcp190n65f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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NVB190N65S3F nvb190n65s3f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 60A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCH190N65F-F155 fch190n65f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO247-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Produkt ist nicht verfügbar
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FCP190N65S3 fcp190n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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FCP190N65S3R0 fcp190n65s3r0-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 33nC
Power dissipation: 144W
Pulsed drain current: 42.5A
Produkt ist nicht verfügbar
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NTPF190N65S3HF ntpf190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 36W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTHL190N65S3HF nthl190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.165Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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NTMT190N65S3H ntmt190n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Case: TDFN4
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 31nC
Power dissipation: 129W
Pulsed drain current: 45A
Produkt ist nicht verfügbar
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