FDMA6023PZT ONSEMI
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 1.4W; MicroFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Gate charge: 17nC
Type of transistor: P-MOSFET x2
Mounting: SMD
On-state resistance: 0.17Ω
Case: MicroFET
Power dissipation: 1.4W
Gate-source voltage: ±8V
Kind of channel: enhancement
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Technische Details FDMA6023PZT ONSEMI
Description: MOSFET 2P-CH 20V 3.6A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-MicroFET (2x2).
Weitere Produktangebote FDMA6023PZT nach Preis ab 0.79 EUR bis 0.79 EUR
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FDMA6023PZT | Hersteller : Fairchild Semiconductor |
Description: MOSFET 2P-CH 20V 3.6A 6MICROFET Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
auf Bestellung 12063 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA6023PZT | Hersteller : onsemi |
Description: MOSFET 2P-CH 20V 3.6A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MicroFET (2x2) |
Produkt ist nicht verfügbar |