| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 1N5938BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
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FDD306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK Case: DPAK Mounting: SMD Kind of channel: enhancement Technology: PowerTrench® Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.7A Gate charge: 21nC On-state resistance: 90mΩ Power dissipation: 52W Gate-source voltage: ±8V |
auf Bestellung 352 Stücke: Lieferzeit 14-21 Tag (e) |
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| FAN54120MP420X | ONSEMI |
Category: Battery and battery cells controllers Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC Operating temperature: -30...85°C Output current: 0.5A Supply voltage: 4...6V DC Rechargeable battery voltage: 4.2V Mounting: SMD Kind of integrated circuit: battery charging controller Case: DFN6 Type of integrated circuit: PMIC Kind of package: reel; tape Number of rechargeable batteries: 1 x Li-Ion / Li-Po Interface: USB |
Produkt ist nicht verfügbar |
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RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2477 Stücke: Lieferzeit 14-21 Tag (e) |
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Technology: UltraFET® |
auf Bestellung 1438 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC8360LET40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 658A Power dissipation: 75W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMC86570LET60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 62A Pulsed drain current: 436A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 6.9mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMD8240LET40 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 73A Pulsed drain current: 489A Power dissipation: 50W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FDMD8260LET60 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 304A Power dissipation: 44W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FSV340AF | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape Mounting: SMD Load current: 3A Max. forward voltage: 0.5V Max. forward impulse current: 80A Max. off-state voltage: 40V Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMA flat |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BD243C | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 3MHz |
Produkt ist nicht verfügbar |
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TIP112G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
Produkt ist nicht verfügbar |
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| BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.29W |
Produkt ist nicht verfügbar |
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NDS9952A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.7/-2.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 130/210mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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SMUN5235DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 5980 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5231DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
auf Bestellung 4080 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDBL0065N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.65mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MC74LVXT4053DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| MC74LVXT4053DTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MC74LVXT4053DTRG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer Number of channels: 3 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MC74LVXT4066DTRG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Case: TSSOP14 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 160µA Technology: CMOS |
Produkt ist nicht verfügbar |
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LM324M | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube Type of integrated circuit: operational amplifier Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: 0...70°C Kind of package: tube |
Produkt ist nicht verfügbar |
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MMSZ5242BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SZMMSZ5242BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
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MOCD207R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 2.8µs Turn-on time: 3µs Number of channels: 2 CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Insulation voltage: 5.3kV Case: SO8 |
auf Bestellung 2140 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOCD207D2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Manufacturer series: MOCD207 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 5.7µs Turn-on time: 7.5µs Number of channels: 2 Max. off-state voltage: 6V CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Insulation voltage: 2.5kV Case: SOIC8 |
Produkt ist nicht verfügbar |
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| MOCD208M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 5.7µs Turn-on time: 7.5µs Number of channels: 2 CTR@If: 40-125%@10mA Collector-emitter voltage: 70V Insulation voltage: 2.5kV Case: SO8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOCD208R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Manufacturer series: MOCD208 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 5.7µs Turn-on time: 7.5µs Number of channels: 2 Max. off-state voltage: 6V CTR@If: 40-125%@10mA Collector-emitter voltage: 70V Insulation voltage: 2.5kV Case: SOIC8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| MOCD207R2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 5.7µs Turn-on time: 7.5µs Number of channels: 2 Max. off-state voltage: 6V Number of pins: 8 Collector-emitter voltage: 70V Insulation voltage: 2.5kV Case: SOIC8 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 35A Case: CASE59 Reverse recovery time: 75ns |
auf Bestellung 3620 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUR1100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 35A; DO41; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
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MM3Z11VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 1370 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ11T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
auf Bestellung 861 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTA143EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Case: SC75; SOT416 Type of transistor: PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
Produkt ist nicht verfügbar |
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| DTA143EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Case: SOT723 Type of transistor: PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Current gain: 15...27 Collector-emitter voltage: 50V Quantity in set/package: 8000pcs. Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
Produkt ist nicht verfügbar |
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| DTA143TET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ Case: SC75; SOT416 Type of transistor: PNP Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Current gain: 160...250 Collector-emitter voltage: 50V Quantity in set/package: 3000pcs. Base resistor: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
Produkt ist nicht verfügbar |
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MUR820G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.975V Max. load current: 16A Reverse recovery time: 35ns Heatsink thickness: max. 1.4mm |
auf Bestellung 616 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5383BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 150V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 150V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: bulk |
auf Bestellung 1576 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5383BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 150V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| BCP53-16T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDPC5030SG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8 Kind of package: reel; tape Gate charge: 17/39nC On-state resistance: 5/2.4mΩ Gate-source voltage: ±20/±12V Power dissipation: 23/25W Drain-source voltage: 30V Drain current: 56/84A Semiconductor structure: asymmetric Kind of channel: enhancement Type of transistor: N-MOSFET x2 Case: PQFN8 Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
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SB5100 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Case: DO201 Max. forward impulse current: 150A Capacitance: 380pF Kind of package: reel; tape Power dissipation: 5W |
Produkt ist nicht verfügbar |
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4N25M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
Produkt ist nicht verfügbar |
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S1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.4W Capacitance: 6.6pF |
auf Bestellung 6210 Stücke: Lieferzeit 14-21 Tag (e) |
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| US1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SOD123F; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NRVUS1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| HUF75345S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 325W Case: D2PAK-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| UJ4C075018K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 60A Pulsed drain current: 205A Power dissipation: 385W Case: TO247-3 Gate-source voltage: -25...25V On-state resistance: 41mΩ Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVBAT54HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
TIL113M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Case: DIP6 Mounting: THT Kind of output: Darlington Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Max. off-state voltage: 3V Collector-emitter voltage: 30V CTR@If: 300%@10mA Insulation voltage: 4.17kV |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUV22G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 40A Power dissipation: 250W Case: TO3; TO204 Current gain: 20...60 Mounting: THT Kind of package: in-tray Frequency: 8MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MJL3281AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264 Mounting: THT Collector current: 15A Collector-emitter voltage: 260V Power dissipation: 200W Frequency: 30MHz Polarisation: bipolar Kind of package: tube Case: TO264 Type of transistor: NPN |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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H11F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7kV Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 25µs Turn-off time: 25µs Manufacturer series: H11FXM |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
H11F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Collector-emitter voltage: 15V Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
auf Bestellung 746 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP623MN-28R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.15A Case: DFN6 Mounting: SMD Number of channels: 1 Operating temperature: -40...85°C Voltage drop: 0.26V Input voltage: 2.5...12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCV8623MN-28R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 2.8V Output current: 0.15A Case: DFN6 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NSVMMBTA05LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
MBR230LSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.37V Max. load current: 4A Kind of package: reel; tape |
auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR2H100SFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 100V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.68V Max. forward impulse current: 50A Kind of package: reel; tape |
auf Bestellung 8649 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5938BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD306P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Gate charge: 21nC
On-state resistance: 90mΩ
Power dissipation: 52W
Gate-source voltage: ±8V
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 79+ | 0.91 EUR |
| 98+ | 0.74 EUR |
| 108+ | 0.67 EUR |
| 250+ | 0.66 EUR |
| FAN54120MP420X |
|
Hersteller: ONSEMI
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
Category: Battery and battery cells controllers
Description: IC: PMIC; battery charging controller; Iout: 500mA; DFN6; 4÷6VDC
Operating temperature: -30...85°C
Output current: 0.5A
Supply voltage: 4...6V DC
Rechargeable battery voltage: 4.2V
Mounting: SMD
Kind of integrated circuit: battery charging controller
Case: DFN6
Type of integrated circuit: PMIC
Kind of package: reel; tape
Number of rechargeable batteries: 1 x Li-Ion / Li-Po
Interface: USB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RFD3055LESM9A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 160+ | 0.45 EUR |
| RFD12N06RLESM9A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
auf Bestellung 1438 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 74+ | 0.97 EUR |
| 94+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| FDMC8360LET40 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 658A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86570LET60 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; Idm: 436A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Pulsed drain current: 436A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMD8240LET40 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 73A; Idm: 489A; 50W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 73A
Pulsed drain current: 489A
Power dissipation: 50W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMD8260LET60 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 47A; Idm: 304A; 44W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 304A
Power dissipation: 44W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV340AF |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Max. forward voltage: 0.5V
Max. forward impulse current: 80A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA flat
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD243C |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP112G |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAT54S |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.29W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDS9952A |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.7/-2.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 130/210mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5235DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 428+ | 0.17 EUR |
| 597+ | 0.12 EUR |
| 691+ | 0.1 EUR |
| 942+ | 0.076 EUR |
| 1064+ | 0.067 EUR |
| 3000+ | 0.057 EUR |
| SMUN5231DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 2.2kΩ
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 749+ | 0.096 EUR |
| 3000+ | 0.056 EUR |
| SMUN5335DW1T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 4080 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 345+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| FDBL0065N40 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| MC74LVXT4053DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74LVXT4053DTG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74LVXT4053DTRG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 2bit,analog,demultiplexer,multiplexer; Ch: 3; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; analog; demultiplexer; multiplexer
Number of channels: 3
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74LVXT4066DTRG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: TSSOP14
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 160µA
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
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| LM324M |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: 0...70°C
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14; tube
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: 0...70°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMSZ5242BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SZMMSZ5242BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD207R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.8µs
Turn-on time: 3µs
Number of channels: 2
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Case: SO8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5.3kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.8µs
Turn-on time: 3µs
Number of channels: 2
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Case: SO8
auf Bestellung 2140 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 161+ | 0.45 EUR |
| 173+ | 0.41 EUR |
| 250+ | 0.38 EUR |
| MOCD207D2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Manufacturer series: MOCD207
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
Max. off-state voltage: 6V
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SOIC8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Manufacturer series: MOCD207
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
Max. off-state voltage: 6V
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SOIC8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD208M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SO8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SO8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD208R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Manufacturer series: MOCD208
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
Max. off-state voltage: 6V
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SOIC8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Manufacturer series: MOCD208
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
Max. off-state voltage: 6V
CTR@If: 40-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SOIC8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD207R2VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
Max. off-state voltage: 6V
Number of pins: 8
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SOIC8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 5.7µs
Turn-on time: 7.5µs
Number of channels: 2
Max. off-state voltage: 6V
Number of pins: 8
Collector-emitter voltage: 70V
Insulation voltage: 2.5kV
Case: SOIC8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.4 EUR |
| MUR1100ERLG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: CASE59
Reverse recovery time: 75ns
auf Bestellung 3620 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 115+ | 0.62 EUR |
| 171+ | 0.42 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.34 EUR |
| MUR1100EG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 35A; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; Ifsm: 35A; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM3Z11VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 1112+ | 0.064 EUR |
| 1370+ | 0.051 EUR |
| MMSZ11T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
auf Bestellung 861 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 861+ | 0.083 EUR |
| DTA143EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Case: SC75; SOT416
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Case: SC75; SOT416
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Case: SOT723
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Case: SOT723
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Current gain: 15...27
Collector-emitter voltage: 50V
Quantity in set/package: 8000pcs.
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTA143TET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Case: SC75; SOT416
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Case: SC75; SOT416
Type of transistor: PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Current gain: 160...250
Collector-emitter voltage: 50V
Quantity in set/package: 3000pcs.
Base resistor: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR820G | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 74+ | 0.98 EUR |
| 89+ | 0.81 EUR |
| 100+ | 0.74 EUR |
| 250+ | 0.66 EUR |
| 500+ | 0.64 EUR |
| 1N5383BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: bulk
auf Bestellung 1576 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 196+ | 0.37 EUR |
| 214+ | 0.33 EUR |
| 278+ | 0.26 EUR |
| 1N5383BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP53-16T3G |
|
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.17 EUR |
| FDPC5030SG |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Kind of package: reel; tape
Gate charge: 17/39nC
On-state resistance: 5/2.4mΩ
Gate-source voltage: ±20/±12V
Power dissipation: 23/25W
Drain-source voltage: 30V
Drain current: 56/84A
Semiconductor structure: asymmetric
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PQFN8
Mounting: SMD
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8
Kind of package: reel; tape
Gate charge: 17/39nC
On-state resistance: 5/2.4mΩ
Gate-source voltage: ±20/±12V
Power dissipation: 23/25W
Drain-source voltage: 30V
Drain current: 56/84A
Semiconductor structure: asymmetric
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PQFN8
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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| SB5100 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; DO201; 5W; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Case: DO201
Max. forward impulse current: 150A
Capacitance: 380pF
Kind of package: reel; tape
Power dissipation: 5W
Produkt ist nicht verfügbar
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| 4N25M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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| S1B |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.4W
Capacitance: 6.6pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.4W
Capacitance: 6.6pF
auf Bestellung 6210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 451+ | 0.16 EUR |
| 587+ | 0.12 EUR |
| 742+ | 0.096 EUR |
| 1000+ | 0.085 EUR |
| 2000+ | 0.079 EUR |
| US1BFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| NRVUS1BFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75345S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 325W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 325W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 325W
Case: D2PAK-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| UJ4C075018K3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 60A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 60A
Pulsed drain current: 205A
Power dissipation: 385W
Case: TO247-3
Gate-source voltage: -25...25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBAT54HT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| TIL113M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Case: DIP6
Mounting: THT
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Collector-emitter voltage: 30V
CTR@If: 300%@10mA
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Case: DIP6
Mounting: THT
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Max. off-state voltage: 3V
Collector-emitter voltage: 30V
CTR@If: 300%@10mA
Insulation voltage: 4.17kV
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 73+ | 0.99 EUR |
| 89+ | 0.81 EUR |
| 145+ | 0.49 EUR |
| 174+ | 0.41 EUR |
| BUV22G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3; TO204
Current gain: 20...60
Mounting: THT
Kind of package: in-tray
Frequency: 8MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 40A; 250W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 40A
Power dissipation: 250W
Case: TO3; TO204
Current gain: 20...60
Mounting: THT
Kind of package: in-tray
Frequency: 8MHz
Produkt ist nicht verfügbar
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| MJL3281AG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Collector current: 15A
Collector-emitter voltage: 260V
Power dissipation: 200W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO264
Type of transistor: NPN
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 260V; 15A; 200W; TO264
Mounting: THT
Collector current: 15A
Collector-emitter voltage: 260V
Power dissipation: 200W
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
Case: TO264
Type of transistor: NPN
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.06 EUR |
| 22+ | 3.36 EUR |
| H11F1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 25µs
Turn-off time: 25µs
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7kV; Uce: 30V; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 25µs
Turn-off time: 25µs
Manufacturer series: H11FXM
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.39 EUR |
| 56+ | 1.29 EUR |
| 61+ | 1.19 EUR |
| 67+ | 1.07 EUR |
| 72+ | 1 EUR |
| 100+ | 0.99 EUR |
| H11F3M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.59 EUR |
| 25+ | 3.4 EUR |
| 50+ | 3.07 EUR |
| 100+ | 2.99 EUR |
| NCP623MN-28R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.15A
Case: DFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Voltage drop: 0.26V
Input voltage: 2.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.15A
Case: DFN6
Mounting: SMD
Number of channels: 1
Operating temperature: -40...85°C
Voltage drop: 0.26V
Input voltage: 2.5...12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8623MN-28R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.15A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.8V
Output current: 0.15A
Case: DFN6
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBTA05LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR230LSFT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. load current: 4A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. load current: 4A
Kind of package: reel; tape
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 241+ | 0.3 EUR |
| 264+ | 0.27 EUR |
| 334+ | 0.21 EUR |
| 374+ | 0.19 EUR |
| 506+ | 0.14 EUR |
| MBR2H100SFT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
auf Bestellung 8649 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 290+ | 0.25 EUR |
| 397+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |