SMUN5312DW1T1G onsemi
Hersteller: onsemiDescription: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.083 EUR |
| 6000+ | 0.075 EUR |
| 9000+ | 0.07 EUR |
| 15000+ | 0.065 EUR |
| 21000+ | 0.062 EUR |
| 30000+ | 0.06 EUR |
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Technische Details SMUN5312DW1T1G onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMUN5312DW1T1G nach Preis ab 0.057 EUR bis 0.41 EUR
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SMUN5312DW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT; complementary pair Collector current: 0.1A Collector-emitter voltage: 50V Base-emitter resistor: 22kΩ Base resistor: 22kΩ Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1785 Stücke: Lieferzeit 7-14 Tag (e) |
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SMUN5312DW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT; complementary pair Collector current: 0.1A Collector-emitter voltage: 50V Base-emitter resistor: 22kΩ Base resistor: 22kΩ Application: automotive industry |
auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5312DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30562 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMUN5312DW1T1G | Hersteller : onsemi |
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auf Bestellung 21256 Stücke: Lieferzeit 10-14 Tag (e) |
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SMUN5312DW1T1G | Hersteller : ON Semiconductor |
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