SMUN5312DW1T1G ONSEMI
Hersteller: ONSEMICategory: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT; complementary pair
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Application: automotive industry
Type of transistor: NPN / PNP
Case: SC70-6; SC88; SOT363
Kind of package: reel; tape
auf Bestellung 1235 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 435+ | 0.16 EUR |
| 604+ | 0.12 EUR |
| 696+ | 0.1 EUR |
| 939+ | 0.076 EUR |
| 1058+ | 0.068 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMUN5312DW1T1G ONSEMI
Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SMUN5312DW1T1G nach Preis ab 0.057 EUR bis 0.41 EUR
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SMUN5312DW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Type of transistor: NPN / PNP Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1235 Stücke: Lieferzeit 7-14 Tag (e) |
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SMUN5312DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMUN5312DW1T1G | Hersteller : onsemi |
Digital Transistors SS BR XSTR DUAL 50V |
auf Bestellung 523 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMUN5312DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 1330 Stücke: Lieferzeit 21-28 Tag (e) |
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SMUN5312DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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SMUN5312DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |