| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| LP2950CDT-3.0RKG | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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LP2950CZ-3.0RAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| VESSMMBT3904LT1G | ONSEMI |
Category: Unclassified Description: VESSMMBT3904LT1G |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GRUMC74HC14ADR2G | ONSEMI |
Category: Unclassified Description: GRUMC74HC14ADR2G |
auf Bestellung 122500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBT5087LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB Application: automotive industry Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Type of transistor: PNP Case: SOT23; TO236AB Collector current: 50mA Power dissipation: 0.25W Collector-emitter voltage: 50V Current gain: 250...800 Frequency: 40MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LM2904DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA Number of channels: dual; 2 Integrated circuit features: low power |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NCV2904DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Micro8; 3÷32VDC; reel,tape; 200nA Number of channels: dual Type of integrated circuit: operational amplifier Case: Micro8 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 13mV Slew rate: 2.4V/μs Voltage supply range: 3...32V DC Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NCV2904DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; SO8; 3÷32VDC; reel,tape; 200nA Number of channels: dual Type of integrated circuit: operational amplifier Case: SO8 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 13mV Slew rate: 2.4V/μs Voltage supply range: 3...32V DC Bandwidth: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NCP752ASN33T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD Kind of package: reel; tape Mounting: SMD Case: TSOP5 Type of integrated circuit: voltage regulator Output current: 0.2A Number of channels: 1 Output voltage: 3.3V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NCP752BSN33T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD Kind of package: reel; tape Mounting: SMD Case: TSOP5 Type of integrated circuit: voltage regulator Output current: 0.2A Number of channels: 1 Output voltage: 3.3V Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NCV500SN33T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD Application: automotive industry Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape Mounting: SMD Case: TSOP5 Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LMV821SQ3T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.6MHz; SC70-5; 2.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 5.6MHz Mounting: SMT Case: SC70-5 Slew rate: 2V/μs Operating temperature: -40...85°C Input offset voltage: 4mV Voltage supply range: 2.7...5.5V DC Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 380nA Input offset current: 50nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GRUMC33063ADR2G | ONSEMI |
Category: Unclassified Description: GRUMC33063ADR2G |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBLS1D1N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Case: TOLL Mounting: SMD Kind of package: reel; tape Gate charge: 166nC On-state resistance: 1.05mΩ Power dissipation: 156W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 351A Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NVBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W Type of transistor: N-MOSFET Polarisation: unipolar Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 131nC On-state resistance: 1.5mΩ Power dissipation: 165W Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NVBLS1D7N08H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W Type of transistor: N-MOSFET Polarisation: unipolar Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.7mΩ Power dissipation: 118.7W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 241.3A Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NVBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W Type of transistor: N-MOSFET Polarisation: unipolar Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Power dissipation: 152W Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 265A Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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2N3906TAR | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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2N3906TF | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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2N3906TFR | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| NSV9435T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.72W Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Collector-emitter voltage: 300mV Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MC34071DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MJD31CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NJVMJD31CRLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NJVMJD31CG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LMV358MUTAG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: uDFN8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NSVBCP69T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| DTC124EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 60...100 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LM2576D2T-ADJG | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LM7301SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Case: SOT23-5 Operating temperature: -40...85°C Input offset voltage: 6mV Voltage supply range: 1.8...32V DC Integrated circuit features: low power; rail-to-rail Kind of package: reel; tape Input offset current: 55nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| BSH2N7002KT1G | ONSEMI |
Category: Unclassified Description: BSH2N7002KT1G |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP117G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SA2039-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 0.8W Case: DPAK Current gain: 200...560 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 2SA2125-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 2SA2125-TD-H | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 2SA2210-1E | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 20A Power dissipation: 30W Case: TO220FP Mounting: THT Kind of package: tube Frequency: 140MHz Current gain: 150...450 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 2SA2210-EPN-1E | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 20A Power dissipation: 2W Case: TO220FP Mounting: THT Kind of package: tube Frequency: 140MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| AFGHL75T65SQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 136nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| AFGHL75T65SQ | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| AFGHL75T65SQDC | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LM1117MPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LM1117IMPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NE521DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT Kind of comparator: fast Kind of package: reel; tape Mounting: SMT Case: SO14 Operating temperature: 0...70°C Delay time: 8.2ns Input offset current: 1µA Input bias current: 7.5µA Input offset voltage: 7.5mV Number of comparators: 2 Operating voltage: 4.75...5.25/-4.75...-5.25V Type of integrated circuit: comparator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| S2SC4617G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.125W Case: SC75; SOT416 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MELMUR1620CTG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SE5532AD8R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual Type of integrated circuit: operational amplifier Integrated circuit features: low noise Case: SO8 Number of channels: dual; 2 Mounting: SMT Kind of package: reel; tape Operating temperature: -55...125°C Input offset current: 150nA Input bias current: 0.8µA Input offset voltage: 4mV Voltage supply range: ± 3...20V DC Slew rate: 9V/μs Bandwidth: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MMBT4403M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MMBT4403WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MMBT5401LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 500mA; 225mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 60 Mounting: SMD |
auf Bestellung 160000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVLJWD040N06CLTAG | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6 Type of transistor: N-MOSFET x2 Drain-source voltage: 60V Drain current: 18A Power dissipation: 12W Case: WDFNW6 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhancement Pulsed drain current: 54A Kind of package: reel; tape Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GRUBSS138 | ONSEMI |
Category: Unclassified Description: GRUBSS138 |
auf Bestellung 474000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MARBSS138LT1G | ONSEMI |
Category: Unclassified Description: MARBSS138LT1G |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
MM3Z18VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCV4949CDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SO8 Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NCV4949CPDR2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1 Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SO8 Type of integrated circuit: voltage regulator Output current: 0.1A Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LP2950CDT-3.0RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LP2950CZ-3.0RAG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VESSMMBT3904LT1G |
auf Bestellung 36000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.02 EUR |
| GRUMC74HC14ADR2G |
auf Bestellung 122500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.17 EUR |
| NSVMMBT5087LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 50mA
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 250...800
Frequency: 40MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2904DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: dual; 2
Integrated circuit features: low power
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Number of channels: dual; 2
Integrated circuit features: low power
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV2904DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 3÷32VDC; reel,tape; 200nA
Number of channels: dual
Type of integrated circuit: operational amplifier
Case: Micro8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Micro8; 3÷32VDC; reel,tape; 200nA
Number of channels: dual
Type of integrated circuit: operational amplifier
Case: Micro8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV2904DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; SO8; 3÷32VDC; reel,tape; 200nA
Number of channels: dual
Type of integrated circuit: operational amplifier
Case: SO8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; SO8; 3÷32VDC; reel,tape; 200nA
Number of channels: dual
Type of integrated circuit: operational amplifier
Case: SO8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP752ASN33T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP752BSN33T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; TSOP5; SMD
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
Output current: 0.2A
Number of channels: 1
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV500SN33T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Application: automotive industry
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Application: automotive industry
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: TSOP5
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMV821SQ3T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.6MHz; SC70-5; 2.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.6MHz
Mounting: SMT
Case: SC70-5
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: 2.7...5.5V DC
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 380nA
Input offset current: 50nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.6MHz; SC70-5; 2.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5.6MHz
Mounting: SMT
Case: SC70-5
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: 2.7...5.5V DC
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 380nA
Input offset current: 50nA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GRUMC33063ADR2G |
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.42 EUR |
| NVBLS1D1N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Power dissipation: 156W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Power dissipation: 156W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D5N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 165W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 165W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Power dissipation: 118.7W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 241.3A
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Power dissipation: 118.7W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 241.3A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N10MCTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Power dissipation: 152W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Power dissipation: 152W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3906TAR |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3906TF |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3906TFR |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSV9435T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC34071DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD31CRLG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD31CRLG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD31CG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LMV358MUTAG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| NSVBCP69T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| DTC124EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Quantity in set/package: 8000pcs.
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| LM2576D2T-ADJG | |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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| LM7301SN1T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input offset current: 55nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Integrated circuit features: low power; rail-to-rail
Kind of package: reel; tape
Input offset current: 55nA
Number of channels: single
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| BSH2N7002KT1G |
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 0.029 EUR |
| TIP117G |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 98+ | 0.74 EUR |
| 156+ | 0.46 EUR |
| 174+ | 0.41 EUR |
| 2SA2039-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 0.8W
Case: DPAK
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
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| 2SA2125-TD-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2125-TD-H |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2210-1E |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 20A
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 140MHz
Current gain: 150...450
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 20A
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 140MHz
Current gain: 150...450
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| 2SA2210-EPN-1E |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 20A
Power dissipation: 2W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 140MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 20A
Power dissipation: 2W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 140MHz
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| NSV2SA2029M3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| FGHL75T65MQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
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| FGHL75T65LQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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| FGHL75T65MQD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| AFGHL75T65SQDT |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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| AFGHL75T65SQ |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| AFGHL75T65SQDC |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| LM1117MPX-ADJNOPB |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| LM1117IMPX-ADJNOPB |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| NE521DR2G |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
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| S2SC4617G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
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| MELMUR1620CTG |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 1.13 EUR |
| 500+ | 1.02 EUR |
| SE5532AD8R2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual; 2
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual; 2
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
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| MMBT4403M3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT4403WT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT5401LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 500mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 500mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
auf Bestellung 160000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.026 EUR |
| NVLJWD040N06CLTAG |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Pulsed drain current: 54A
Kind of package: reel; tape
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Pulsed drain current: 54A
Kind of package: reel; tape
Polarisation: unipolar
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| GRUBSS138 |
auf Bestellung 474000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.038 EUR |
| MARBSS138LT1G |
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.05 EUR |
| MM3Z18VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 150+ | 0.47 EUR |
| NCV4949CDR2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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| NCV4949CPDR2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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| NTH4L075N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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