| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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74AC138MTC | ONSEMI |
 Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 1; IN: 3; SMD; TSSOP16; AC; AC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 3 Mounting: SMD Case: TSSOP16 Manufacturer series: AC Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74AC138DG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; SMD; SO16; AC; AC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 1 Mounting: SMD Case: SO16 Manufacturer series: AC Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74AC138DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: AC Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74AC138DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: AC Family: AC Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N5369BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
auf Bestellung 2030 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5369BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1N5369BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBR2060CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220-3; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.85V Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 20A |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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UAA2016PG | ONSEMI |
Category: Integrated circuits - others Description: IC: driver; AC/DC switcher; DIP8; 130mA; Ch: 1; 8÷10VDC Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher Case: DIP8 Output current: 0.13A Number of channels: 1 Supply voltage: 8...10V DC Mounting: THT Operating temperature: -20...85°C DC supply current: 1.5mA Integrated circuit features: zero voltage switching Application: thyristor triac trigger ciruit |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8 Power dissipation: 293W Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Drain current: 174A Pulsed drain current: 900A Gate-source voltage: ±20V Drain-source voltage: 150V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8 Power dissipation: 146W Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Drain current: 165A Pulsed drain current: 900A Gate-source voltage: ±20V Drain-source voltage: 150V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFS015N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTTFS015N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2N5195G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225 Mounting: THT Type of transistor: PNP Case: TO225 Collector current: 4A Power dissipation: 40W Current gain: 20...80 Collector-emitter voltage: 80V Frequency: 2MHz Polarisation: bipolar Kind of package: bulk |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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BD442G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 36W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 40...475 Frequency: 3MHz |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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MOCD213M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100%@10mA Collector-emitter voltage: 70V Case: SO8 Turn-on time: 3µs Turn-off time: 2.8µs |
auf Bestellung 2291 Stücke: Lieferzeit 14-21 Tag (e) |
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KST10MTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Kind of transistor: RF Power dissipation: 0.35W Collector-emitter voltage: 25V Current gain: 60 Frequency: 650MHz Kind of package: reel; tape Polarisation: bipolar |
auf Bestellung 883 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC161ADG | ONSEMI |
Category: Counters/dividers Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Supply voltage: 2...6V DC Family: HC Number of channels: 1 Number of inputs: 9 Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable Manufacturer series: HC Technology: CMOS |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMT80060DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 184A Pulsed drain current: 1825A Power dissipation: 156W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 238nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N5363BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB Semiconductor structure: single diode Mounting: THT Type of diode: Zener Power dissipation: 5W Tolerance: ±5% Manufacturer series: 1N53xxB Zener voltage: 30V Kind of package: bulk Case: CASE017AA |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5363BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAV23S | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape |
auf Bestellung 1198 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV23CLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 9A |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVBAV23CLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Case: SOT23 Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SMBJ30A | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 35V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC157ADG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16 Type of integrated circuit: digital Number of channels: 4 Case: SO16 Supply voltage: 2...6V DC Mounting: SMD Kind of package: tube Operating temperature: -40...85°C Manufacturer series: HC Kind of integrated circuit: data selector; multiplexer Technology: TTL Family: HC Number of inputs: 2 |
auf Bestellung 3455 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMQ8203 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-80V Drain current: 6/-6A Power dissipation: 2.5W Case: WDFN12 Gate-source voltage: ±20V On-state resistance: 323/191mΩ Mounting: SMD Gate charge: 19/5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Semiconductor structure: common drain |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMQ86530L | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12 Type of transistor: N-MOSFET x4 Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 22W Case: MLP12 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level; MOSFET H-Bridge Pulsed drain current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV4264-2ST33T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV4264-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2SA2126-TL-H | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252 Mounting: SMD Collector current: 3A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: TO252 Type of transistor: PNP Kind of package: reel; tape |
auf Bestellung 920 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.2V Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Peak pulse power dissipation: 0.15W Case: SOD923 |
auf Bestellung 636 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT589LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.31/0.71W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Collector current: 1A Collector-emitter voltage: 30V Current gain: 100...300 Frequency: 100MHz |
auf Bestellung 1391 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBT589LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.31W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry Collector current: 1A Collector-emitter voltage: 30V Current gain: 100...300 Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NRVBSS24NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry Max. load current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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RB521S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RB521S30T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVRB521S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 1A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVRB521S30T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDPC8016S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 60/100A Power dissipation: 21/42W Case: PQFN8 On-state resistance: 3.8/1.4mΩ Mounting: SMD Gate charge: 25/67nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Semiconductor structure: asymmetric |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMC8015L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Power dissipation: 24W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMC8010DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 99A Pulsed drain current: 788A Power dissipation: 50W Case: PQFN8 On-state resistance: 1.89mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCV4275ADS50R4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 0.5V Output voltage: 5V Output current: 0.45A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Number of channels: 1 Input voltage: 5.5...42V Manufacturer series: NCV4275A Integrated circuit features: RESET output Application: automotive industry |
auf Bestellung 1497 Stücke: Lieferzeit 14-21 Tag (e) |
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MRA4007T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.18V Max. load current: 30A Kind of package: reel; tape |
auf Bestellung 16786 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVA4007T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: SMA Max. forward voltage: 1.18V Application: automotive industry Max. load current: 2A |
auf Bestellung 3962 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ36A | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 42.1V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| RSL10-002GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board Connection: pin strips; pin strips; Pmod socket; USB micro |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| RSL10-SIP-001GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: RSL10 Interface: GPIO; I2C; SPI; UART Kit contents: prototype board Components: RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board Connection: pin strips; pin strips; USB micro |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LM2574DW-ADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: SO16-W Mounting: SMD Topology: buck Number of channels: 1 Kind of package: reel; tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2575T-3.3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5 Input voltage: 4.75...40V DC Output voltage: 3.3V DC Output current: 1A Mounting: THT Operating temperature: -40...125°C Frequency: 42...63kHz Topology: buck Kind of integrated circuit: DC/DC converter Case: TO220-5 Type of integrated circuit: PMIC Kind of package: tube Number of channels: 1 |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBFJ111 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA Kind of package: reel; tape Type of transistor: N-JFET Mounting: SMD Case: SOT23 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.35W On-state resistance: 30Ω |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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J111 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Kind of package: bulk Type of transistor: N-JFET Mounting: THT Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 30Ω |
auf Bestellung 3537 Stücke: Lieferzeit 14-21 Tag (e) |
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UJ4C075060K4S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 750V Drain current: 20.6A Pulsed drain current: 62A Power dissipation: 155W Case: TO247-4 Gate-source voltage: -25...25V On-state resistance: 147mΩ Mounting: THT Gate charge: 37.8nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBFJ309LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 30mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 7905 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF4416A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -35V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 1477 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF4393LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 100Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
auf Bestellung 1066 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBFJ202 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA Mounting: SMD Case: SOT23 Type of transistor: N-JFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: -40V Drain current: 900µA Gate current: 50mA Power dissipation: 0.35W |
auf Bestellung 1241 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBF4392LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 60Ω |
Produkt ist nicht verfügbar |
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MMBF4391LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V Mounting: SMD Kind of package: reel; tape Gate current: 50mA On-state resistance: 30Ω |
auf Bestellung 2621 Stücke: Lieferzeit 14-21 Tag (e) |
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CPH3910-TL-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.4W Case: CPH3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AC138MTC |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 3; SMD; TSSOP16; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 3; SMD; TSSOP16; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC138DG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; SMD; SO16; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SO16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; SMD; SO16; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SO16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC138DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC138DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5369BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
auf Bestellung 2030 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 295+ | 0.24 EUR |
| 1N5369BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5369BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR2060CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220-3; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220-3; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 20A
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 59+ | 1.23 EUR |
| UAA2016PG |
|
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; AC/DC switcher; DIP8; 130mA; Ch: 1; 8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher
Case: DIP8
Output current: 0.13A
Number of channels: 1
Supply voltage: 8...10V DC
Mounting: THT
Operating temperature: -20...85°C
DC supply current: 1.5mA
Integrated circuit features: zero voltage switching
Application: thyristor triac trigger ciruit
Category: Integrated circuits - others
Description: IC: driver; AC/DC switcher; DIP8; 130mA; Ch: 1; 8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher
Case: DIP8
Output current: 0.13A
Number of channels: 1
Supply voltage: 8...10V DC
Mounting: THT
Operating temperature: -20...85°C
DC supply current: 1.5mA
Integrated circuit features: zero voltage switching
Application: thyristor triac trigger ciruit
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| NTMTSC4D3N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Power dissipation: 293W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Drain current: 174A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Power dissipation: 293W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Drain current: 174A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMTSC4D3N15MC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Power dissipation: 146W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Drain current: 165A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Power dissipation: 146W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Drain current: 165A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS015N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS015N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5195G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225
Mounting: THT
Type of transistor: PNP
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 20...80
Collector-emitter voltage: 80V
Frequency: 2MHz
Polarisation: bipolar
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 40W; TO225
Mounting: THT
Type of transistor: PNP
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 20...80
Collector-emitter voltage: 80V
Frequency: 2MHz
Polarisation: bipolar
Kind of package: bulk
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| BD442G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40...475
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40...475
Frequency: 3MHz
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 87+ | 0.83 EUR |
| MOCD213M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 70V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 70V
Case: SO8
Turn-on time: 3µs
Turn-off time: 2.8µs
auf Bestellung 2291 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 130+ | 0.55 EUR |
| 141+ | 0.51 EUR |
| 150+ | 0.48 EUR |
| 161+ | 0.45 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.34 EUR |
| KST10MTF |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 883 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 883+ | 0.082 EUR |
| MC74HC161ADG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Supply voltage: 2...6V DC
Family: HC
Number of channels: 1
Number of inputs: 9
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Manufacturer series: HC
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; Ch: 1; IN: 9; CMOS; HC; SMD; SOIC16; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Supply voltage: 2...6V DC
Family: HC
Number of channels: 1
Number of inputs: 9
Kind of integrated circuit: 4bit; asynchronous reset; binary counter; presettable
Manufacturer series: HC
Technology: CMOS
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| FDMT80060DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 1825A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 184A
Pulsed drain current: 1825A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 238nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5363BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 30V
Kind of package: bulk
Case: CASE017AA
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 150+ | 0.47 EUR |
| 1N5363BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BAV23S |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 1198 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 556+ | 0.13 EUR |
| 717+ | 0.1 EUR |
| 777+ | 0.092 EUR |
| 942+ | 0.076 EUR |
| 1122+ | 0.064 EUR |
| BAV23CLT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 9A
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.76 EUR |
| NSVBAV23CLT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ30A |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC157ADG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Number of channels: 4
Case: SO16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Manufacturer series: HC
Kind of integrated circuit: data selector; multiplexer
Technology: TTL
Family: HC
Number of inputs: 2
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Number of channels: 4
Case: SO16
Supply voltage: 2...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -40...85°C
Manufacturer series: HC
Kind of integrated circuit: data selector; multiplexer
Technology: TTL
Family: HC
Number of inputs: 2
auf Bestellung 3455 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 220+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 277+ | 0.26 EUR |
| 298+ | 0.24 EUR |
| 317+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| FDMQ8203 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-80V; 6/-6A; 2.5W; WDFN12
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-80V
Drain current: 6/-6A
Power dissipation: 2.5W
Case: WDFN12
Gate-source voltage: ±20V
On-state resistance: 323/191mΩ
Mounting: SMD
Gate charge: 19/5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Semiconductor structure: common drain
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMQ86530L |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x4; unipolar; 60V; 8A; Idm: 50A; 22W; MLP12
Type of transistor: N-MOSFET x4
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 22W
Case: MLP12
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level; MOSFET H-Bridge
Pulsed drain current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV4264-2ST33T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4264-2CST33T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SA2126-TL-H |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: TO252
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; TO252
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: TO252
Type of transistor: PNP
Kind of package: reel; tape
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 184+ | 0.39 EUR |
| 209+ | 0.34 EUR |
| 232+ | 0.31 EUR |
| 700+ | 0.29 EUR |
| ESD9X5.0ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 0.15W; 6.2V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Case: SOD923
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| MMBT589LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31/0.71W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31/0.71W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
auf Bestellung 1391 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 171+ | 0.42 EUR |
| 194+ | 0.37 EUR |
| 223+ | 0.32 EUR |
| 231+ | 0.31 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.24 EUR |
| NSVMMBT589LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.31W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 1A
Collector-emitter voltage: 30V
Current gain: 100...300
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRVBSS24NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB521S30T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB521S30T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVRB521S30T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVRB521S30T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPC8016S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60/100A
Power dissipation: 21/42W
Case: PQFN8
On-state resistance: 3.8/1.4mΩ
Mounting: SMD
Gate charge: 25/67nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 60/100A; 21/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60/100A
Power dissipation: 21/42W
Case: PQFN8
On-state resistance: 3.8/1.4mΩ
Mounting: SMD
Gate charge: 25/67nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8015L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 24W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 30A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 30A; 24W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 24W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC8010DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 99A
Pulsed drain current: 788A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 1.89mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 99A; Idm: 788A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 99A
Pulsed drain current: 788A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 1.89mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4275ADS50R4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 5V; 0.45A; D2PAK-5; SMD; NCV4275A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.45A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 5.5...42V
Manufacturer series: NCV4275A
Integrated circuit features: RESET output
Application: automotive industry
auf Bestellung 1497 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 1.87 EUR |
| 48+ | 1.52 EUR |
| MRA4007T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 16786 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 496+ | 0.14 EUR |
| 653+ | 0.11 EUR |
| 729+ | 0.098 EUR |
| 839+ | 0.085 EUR |
| 928+ | 0.077 EUR |
| 1023+ | 0.07 EUR |
| 2500+ | 0.065 EUR |
| NRVA4007T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SMA
Max. forward voltage: 1.18V
Application: automotive industry
Max. load current: 2A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SMA
Max. forward voltage: 1.18V
Application: automotive industry
Max. load current: 2A
auf Bestellung 3962 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 725+ | 0.099 EUR |
| 864+ | 0.083 EUR |
| 973+ | 0.074 EUR |
| SMBJ36A |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 42.1V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 42.1V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RSL10-002GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; Pmod socket; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; Pmod socket; USB micro
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RSL10-SIP-001GEVB |
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: RSL10
Interface: GPIO; I2C; SPI; UART
Kit contents: prototype board
Components: RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Connection: pin strips; pin strips; USB micro
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2574DW-ADJR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: SO16-W
Mounting: SMD
Topology: buck
Number of channels: 1
Kind of package: reel; tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| LM2575T-3.3G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 42...63kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Type of integrated circuit: PMIC
Kind of package: tube
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 42...63kHz
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Type of integrated circuit: PMIC
Kind of package: tube
Number of channels: 1
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.26 EUR |
| 35+ | 2.09 EUR |
| MMBFJ111 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 30Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.35W; SOT23; Igt: 50mA
Kind of package: reel; tape
Type of transistor: N-JFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.35W
On-state resistance: 30Ω
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 193+ | 0.37 EUR |
| 278+ | 0.26 EUR |
| 325+ | 0.22 EUR |
| 500+ | 0.16 EUR |
| J111 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Type of transistor: N-JFET
Mounting: THT
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Kind of package: bulk
Type of transistor: N-JFET
Mounting: THT
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
auf Bestellung 3537 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 358+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| 511+ | 0.14 EUR |
| UJ4C075060K4S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 750V; 20.6A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 750V
Drain current: 20.6A
Pulsed drain current: 62A
Power dissipation: 155W
Case: TO247-4
Gate-source voltage: -25...25V
On-state resistance: 147mΩ
Mounting: THT
Gate charge: 37.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.68 EUR |
| 7+ | 11.23 EUR |
| 10+ | 10.05 EUR |
| 30+ | 9.52 EUR |
| MMBFJ309LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 7905 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 348+ | 0.21 EUR |
| 397+ | 0.18 EUR |
| 472+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 582+ | 0.12 EUR |
| MMBF4416A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -35V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 1477 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.17 EUR |
| 544+ | 0.13 EUR |
| 618+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| MMBF4393LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 100Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 295+ | 0.24 EUR |
| 379+ | 0.19 EUR |
| 428+ | 0.17 EUR |
| 516+ | 0.14 EUR |
| 603+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| MMBFJ202 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 900µA
Gate current: 50mA
Power dissipation: 0.35W
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 900uA; 0.35W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Type of transistor: N-JFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 900µA
Gate current: 50mA
Power dissipation: 0.35W
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 207+ | 0.35 EUR |
| 248+ | 0.29 EUR |
| 463+ | 0.15 EUR |
| 532+ | 0.13 EUR |
| MMBF4392LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 60Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBF4391LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 30Ω
auf Bestellung 2621 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 161+ | 0.45 EUR |
| 180+ | 0.4 EUR |
| 278+ | 0.26 EUR |
| 350+ | 0.2 EUR |
| 511+ | 0.14 EUR |
| CPH3910-TL-E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 137+ | 0.52 EUR |
| 161+ | 0.44 EUR |