| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FAN3100CSX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.8...2.5A Impulse rise time: 20ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 14ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Protection: undervoltage UVP |
auf Bestellung 2108 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3100TMPX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1 Case: MLP6 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -2.5...1.8A Impulse rise time: 20ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 14ns Kind of output: non-inverting Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD |
auf Bestellung 2906 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP43080ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCP43080AMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCP43080DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCP43080DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP43080DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NCP4308DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SZNUP3105LT1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape Type of diode: TVS Max. off-state voltage: 32V Breakdown voltage: 35.6V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2795 Stücke: Lieferzeit 14-21 Tag (e) |
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| NUP3105LT1G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 35.6V; 8A; bidirectional; SOT23; reel,tape Type of diode: TVS Max. off-state voltage: 32V Breakdown voltage: 35.6V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5x6 Mounting: SMD Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.73V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVTS12120MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVTS12120MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NRVTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. load current: 60A Max. forward impulse current: 0.3kA Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP160AFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Voltage drop: 0.105V Output current: 0.25A Number of channels: 1 Input voltage: 1.9...5.5V Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP160BFCS514T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD Manufacturer series: NCP160 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Voltage drop: 0.105V Output current: 0.25A Number of channels: 1 Input voltage: 1.9...5.5V Output voltage: 5.14V Case: WLCSP4 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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MC33174DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Case: SO14 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Kind of package: reel; tape Type of integrated circuit: operational amplifier Integrated circuit features: low power Bandwidth: 1.8MHz Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| MC33172VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Case: SO8 Mounting: SMT Operating temperature: -40...125°C Input offset current: 40nA Input bias current: 0.2µA Input offset voltage: 6.5mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Kind of package: reel; tape Type of integrated circuit: operational amplifier Integrated circuit features: low power Bandwidth: 1.8MHz Number of channels: dual; 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC33178DMR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; Micro8 Case: Micro8 Mounting: SMT Operating temperature: -40...85°C Input offset current: 60nA Input bias current: 600nA Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Slew rate: 2V/μs Kind of package: reel; tape Type of integrated circuit: operational amplifier Integrated circuit features: low power Bandwidth: 5MHz Number of channels: dual; 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC33174DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC Case: TSSOP14 Mounting: SMT Operating temperature: -40...85°C Input offset current: 40nA Input bias current: 0.2µA Input offset voltage: 6.5mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Kind of package: reel; tape Type of integrated circuit: operational amplifier Integrated circuit features: low power Bandwidth: 1.8MHz Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MC33174VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Case: SO14 Mounting: SMT Operating temperature: -40...125°C Input offset current: 40nA Input bias current: 0.2µA Input offset voltage: 6.5mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Slew rate: 2.1V/μs Kind of package: reel; tape Type of integrated circuit: operational amplifier Integrated circuit features: low power Bandwidth: 1.8MHz Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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FOD817 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs |
auf Bestellung 1516 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817DSD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 300-600%@5mA Collector-emitter voltage: 70V Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 968 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817DS | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 300-600%@5mA Collector-emitter voltage: 70V Case: SO4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817D | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 300-600%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
auf Bestellung 2177 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD8173SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 80-160%@5mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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FOD817D300W | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 300-600%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4µs Turn-off time: 4µs Manufacturer series: FOD817 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FOD8173 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: -0.5÷6.5V; logic; SOP6; Ch: 1; 40kV/μs; 20Mbps Type of optocoupler: optotriac Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Case: SOP6 Turn-on time: 7ns Turn-off time: 7ns Transfer rate: 20Mbps Output voltage: -0.5...6.5V Max. off-state voltage: 5V Slew rate: 40kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FOD817D3S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Collector-emitter voltage: 70V Case: SMD4 Collector current: 50mA Number of pins: 4 Max. off-state voltage: 6V |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC14046BDWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; comparator; Ch: 1; CMOS; SMD; SOIC16; OUT: 2; 3÷18V Technology: CMOS Kind of integrated circuit: comparator Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Operating temperature: -55...125°C Number of channels: 1 Number of outputs: 2 Supply voltage: 3...18V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SBCW72LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FDD86250 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Drain-source voltage: 150V Pulsed drain current: 164A Drain current: 27A Gate charge: 33nC On-state resistance: 45mΩ Power dissipation: 132W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 2184 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD86252 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK Case: DPAK Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Kind of package: reel; tape Drain-source voltage: 150V Drain current: 27A On-state resistance: 103mΩ Power dissipation: 89W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 2244 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDS86252 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 4.5A; Idm: 20A; 5W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Pulsed drain current: 20A Drain current: 4.5A Gate charge: 10.6nC On-state resistance: 55mΩ Power dissipation: 5W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDD86250-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 50A; 160W; DPAK,TO252 Case: DPAK; TO252 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: PowerTrench® Drain-source voltage: 150V Drain current: 50A Gate charge: 28nC On-state resistance: 22mΩ Power dissipation: 160W Polarisation: unipolar Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMC86259P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33 Case: Power33 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Drain-source voltage: -150V Pulsed drain current: -20A Drain current: -13A Gate charge: 32nC On-state resistance: 178mΩ Power dissipation: 62W Gate-source voltage: ±25V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMA86251 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.4A; Idm: 12A; 2.4W; MicroFET Case: MicroFET Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Pulsed drain current: 12A Drain current: 2.4A Gate charge: 4.1nC On-state resistance: 0.175Ω Power dissipation: 2.4W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMS86255ET150 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56 Case: Power56 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Pulsed drain current: 276A Drain current: 44A Gate charge: 63nC On-state resistance: 25mΩ Power dissipation: 136W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMS86250 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 30A; Idm: 100A; 96W; Power56 Case: Power56 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Pulsed drain current: 100A Drain current: 30A Gate charge: 25nC On-state resistance: 25mΩ Power dissipation: 96W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| FDMS86255 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8 Case: PQFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Drain-source voltage: 150V Pulsed drain current: 271A Drain current: 62A Gate charge: 45nC On-state resistance: 12.4mΩ Power dissipation: 113W Gate-source voltage: ±20V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 1N4934G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 30A Case: CASE59-10; DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| 1N4934RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 300ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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BAS116LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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| BAS116TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT416 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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SBAS116LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NSVBAS116LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| MBR8170TFSTXG | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; WDFN8; SMD Mounting: SMD Type of diode: Schottky rectifying Case: WDFN8 Leakage current: 30µA Max. forward voltage: 0.89V Max. forward impulse current: 140A |
Produkt ist nicht verfügbar |
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| NRTS6100TFSTXG | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: WDFN8 Max. forward voltage: 0.62V Load current: 6A Max. off-state voltage: 0.1kV Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |
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LM2576D2T-005G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS21LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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CS8190EDWFR20G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; SO20-W; 10mA; 8.5÷16VDC Type of integrated circuit: driver Case: SO20-W Output current: 10mA Integrated circuit features: air-core meter movements; Return To Zero (RTZ) function Mounting: SMD Operating temperature: -40...105°C Application: speedometer; tachometer Operating voltage: 8.5...16V DC Kind of package: reel; tape |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS5C604NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 288A; Idm: 900A; 100W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 288A Pulsed drain current: 900A Power dissipation: 100W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Mounting: SMD Collector current: 0.2A Power dissipation: 0.15W Current gain: 100...300 Collector-emitter voltage: 40V Frequency: 250MHz Polarisation: bipolar |
auf Bestellung 2187 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6331L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Mounting: SMD Case: SuperSOT-6 Kind of integrated circuit: high-side Kind of output: P-Channel Type of integrated circuit: power switch Supply voltage: -8...8V DC Control voltage: -0.5...8V DC On-state resistance: 0.1Ω Number of channels: 1 Output current: 2.8A Kind of package: reel; tape |
auf Bestellung 1397 Stücke: Lieferzeit 14-21 Tag (e) |
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| SPS-READER-GEVK | ONSEMI |
Category: Development kits - othersDescription: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323 Interface: I2C; SPI; UART Connection: pin header; SMA development kits accessories features: Arduino Shield compatible |
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| NCP163AMX300TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.155V Number of channels: 1 Output voltage: 3V Tolerance: ±2% Input voltage: 2.2...5.5V |
Produkt ist nicht verfügbar |
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| NCP163AMX500TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.105V Number of channels: 1 Output voltage: 5V Tolerance: ±2% Input voltage: 2.2...5.5V |
Produkt ist nicht verfügbar |
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NCP163ASN500T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; SOT23-5; SMD Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23-5 Operating temperature: -40...125°C Output current: 0.25A Number of channels: 1 Output voltage: 5V Tolerance: ±2% Input voltage: 2.2...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NCP163AMX330TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.145V Number of channels: 1 Output voltage: 3.3V Tolerance: ±2% Input voltage: 2.2...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NCP163AMX180TBG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 250mA; XDFN4; SMD Protection: overheating OTP Manufacturer series: NCP163 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: XDFN4 Operating temperature: -40...125°C Output current: 0.25A Voltage drop: 0.25V Number of channels: 1 Output voltage: 1.8V Tolerance: ±2% Input voltage: 2.2...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FAN3100CSX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.8...2.5A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.8...2.5A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Protection: undervoltage UVP
auf Bestellung 2108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 103+ | 0.69 EUR |
| FAN3100TMPX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Case: MLP6
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Case: MLP6
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 91+ | 0.79 EUR |
| 99+ | 0.73 EUR |
| NCP43080ADR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080AMTTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080DDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080DMNTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP43080DMTTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP4308DDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
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| SZNUP3105LT1G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 35.6V; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2795 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 288+ | 0.25 EUR |
| 305+ | 0.23 EUR |
| 323+ | 0.22 EUR |
| NUP3105LT1G |
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Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 35.6V; 8A; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 35.6V; 8A; bidirectional; SOT23; reel,tape
Type of diode: TVS
Max. off-state voltage: 32V
Breakdown voltage: 35.6V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Version: ESD
Produkt ist nicht verfügbar
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| NRTS30120MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NRVTS12120MFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS12120MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NRVTS30120MFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP160AFCS514T2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP160BFCS514T2G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.14V; 250mA; WLCSP4; SMD
Manufacturer series: NCP160
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Voltage drop: 0.105V
Output current: 0.25A
Number of channels: 1
Input voltage: 1.9...5.5V
Output voltage: 5.14V
Case: WLCSP4
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC33174DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Case: SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Case: SO14
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: quad; 4
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| MC33172VDR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Case: SO8
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 40nA
Input bias current: 0.2µA
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Case: SO8
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 40nA
Input bias current: 0.2µA
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: dual; 2
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| MC33178DMR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; Micro8
Case: Micro8
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 60nA
Input bias current: 600nA
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 5MHz
Number of channels: dual; 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; ±2÷18VDC,4÷36VDC; Micro8
Case: Micro8
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 60nA
Input bias current: 600nA
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 5MHz
Number of channels: dual; 2
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| MC33174DTBR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 40nA
Input bias current: 0.2µA
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC
Case: TSSOP14
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 40nA
Input bias current: 0.2µA
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: quad; 4
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| MC33174VDR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 40nA
Input bias current: 0.2µA
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Case: SO14
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 40nA
Input bias current: 0.2µA
Input offset voltage: 6.5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Slew rate: 2.1V/μs
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Bandwidth: 1.8MHz
Number of channels: quad; 4
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FOD817 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
auf Bestellung 1516 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 417+ | 0.17 EUR |
| 527+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| FOD817DSD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 968 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 258+ | 0.28 EUR |
| 334+ | 0.21 EUR |
| 391+ | 0.18 EUR |
| 443+ | 0.16 EUR |
| FOD817DS |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SO4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: SO4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 254+ | 0.28 EUR |
| 291+ | 0.25 EUR |
| 331+ | 0.21 EUR |
| FOD817D |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 304+ | 0.24 EUR |
| 417+ | 0.17 EUR |
| 532+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| FOD8173SD |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 214+ | 0.33 EUR |
| FOD817D300W |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 300-600%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4µs
Turn-off time: 4µs
Manufacturer series: FOD817
Produkt ist nicht verfügbar
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| FOD8173 |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷6.5V; logic; SOP6; Ch: 1; 40kV/μs; 20Mbps
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 7ns
Turn-off time: 7ns
Transfer rate: 20Mbps
Output voltage: -0.5...6.5V
Max. off-state voltage: 5V
Slew rate: 40kV/μs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: -0.5÷6.5V; logic; SOP6; Ch: 1; 40kV/μs; 20Mbps
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SOP6
Turn-on time: 7ns
Turn-off time: 7ns
Transfer rate: 20Mbps
Output voltage: -0.5...6.5V
Max. off-state voltage: 5V
Slew rate: 40kV/μs
Produkt ist nicht verfügbar
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| FOD817D3S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: SMD4
Collector current: 50mA
Number of pins: 4
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: SMD4
Collector current: 50mA
Number of pins: 4
Max. off-state voltage: 6V
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.12 EUR |
| MC14046BDWR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; comparator; Ch: 1; CMOS; SMD; SOIC16; OUT: 2; 3÷18V
Technology: CMOS
Kind of integrated circuit: comparator
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 2
Supply voltage: 3...18V
Category: Flip-Flops
Description: IC: digital; comparator; Ch: 1; CMOS; SMD; SOIC16; OUT: 2; 3÷18V
Technology: CMOS
Kind of integrated circuit: comparator
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Number of outputs: 2
Supply voltage: 3...18V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBCW72LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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| FDD86250 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 164A
Drain current: 27A
Gate charge: 33nC
On-state resistance: 45mΩ
Power dissipation: 132W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 164A
Drain current: 27A
Gate charge: 33nC
On-state resistance: 45mΩ
Power dissipation: 132W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 2184 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 44+ | 1.63 EUR |
| FDD86252 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Power dissipation: 89W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Power dissipation: 89W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 2244 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.47 EUR |
| 60+ | 1.2 EUR |
| 67+ | 1.07 EUR |
| 81+ | 0.89 EUR |
| FDS86252 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4.5A; Idm: 20A; 5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 20A
Drain current: 4.5A
Gate charge: 10.6nC
On-state resistance: 55mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4.5A; Idm: 20A; 5W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 20A
Drain current: 4.5A
Gate charge: 10.6nC
On-state resistance: 55mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD86250-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 160W; DPAK,TO252
Case: DPAK; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 50A
Gate charge: 28nC
On-state resistance: 22mΩ
Power dissipation: 160W
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 160W; DPAK,TO252
Case: DPAK; TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 50A
Gate charge: 28nC
On-state resistance: 22mΩ
Power dissipation: 160W
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86259P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Case: Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -13A
Gate charge: 32nC
On-state resistance: 178mΩ
Power dissipation: 62W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Case: Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -150V
Pulsed drain current: -20A
Drain current: -13A
Gate charge: 32nC
On-state resistance: 178mΩ
Power dissipation: 62W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMA86251 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.4A; Idm: 12A; 2.4W; MicroFET
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 12A
Drain current: 2.4A
Gate charge: 4.1nC
On-state resistance: 0.175Ω
Power dissipation: 2.4W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.4A; Idm: 12A; 2.4W; MicroFET
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 12A
Drain current: 2.4A
Gate charge: 4.1nC
On-state resistance: 0.175Ω
Power dissipation: 2.4W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86255ET150 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 276A
Drain current: 44A
Gate charge: 63nC
On-state resistance: 25mΩ
Power dissipation: 136W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 276A
Drain current: 44A
Gate charge: 63nC
On-state resistance: 25mΩ
Power dissipation: 136W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86250 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; Idm: 100A; 96W; Power56
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 100A
Drain current: 30A
Gate charge: 25nC
On-state resistance: 25mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; Idm: 100A; 96W; Power56
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 100A
Drain current: 30A
Gate charge: 25nC
On-state resistance: 25mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FDMS86255 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 271A
Drain current: 62A
Gate charge: 45nC
On-state resistance: 12.4mΩ
Power dissipation: 113W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 271A; 113W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 271A
Drain current: 62A
Gate charge: 45nC
On-state resistance: 12.4mΩ
Power dissipation: 113W
Gate-source voltage: ±20V
Polarisation: unipolar
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| 1N4934G |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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| 1N4934RLG |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; Ifsm: 30A; DO41; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
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| BAS116LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 137+ | 0.51 EUR |
| BAS116TT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| SBAS116LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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| NSVBAS116LT3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| MBR8170TFSTXG |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Mounting: SMD
Type of diode: Schottky rectifying
Case: WDFN8
Leakage current: 30µA
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD
Mounting: SMD
Type of diode: Schottky rectifying
Case: WDFN8
Leakage current: 30µA
Max. forward voltage: 0.89V
Max. forward impulse current: 140A
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| NRTS6100TFSTXG |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: WDFN8
Max. forward voltage: 0.62V
Load current: 6A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: WDFN8
Max. forward voltage: 0.62V
Load current: 6A
Max. off-state voltage: 0.1kV
Max. forward impulse current: 150A
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| LM2576D2T-005G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.36 EUR |
| 40+ | 1.82 EUR |
| SBAS21LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
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| CS8190EDWFR20G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; SO20-W; 10mA; 8.5÷16VDC
Type of integrated circuit: driver
Case: SO20-W
Output current: 10mA
Integrated circuit features: air-core meter movements; Return To Zero (RTZ) function
Mounting: SMD
Operating temperature: -40...105°C
Application: speedometer; tachometer
Operating voltage: 8.5...16V DC
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; SO20-W; 10mA; 8.5÷16VDC
Type of integrated circuit: driver
Case: SO20-W
Output current: 10mA
Integrated circuit features: air-core meter movements; Return To Zero (RTZ) function
Mounting: SMD
Operating temperature: -40...105°C
Application: speedometer; tachometer
Operating voltage: 8.5...16V DC
Kind of package: reel; tape
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.52 EUR |
| 14+ | 5.29 EUR |
| NVMFS5C604NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MBT3906DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.15W
Current gain: 100...300
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 2187 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 758+ | 0.094 EUR |
| 1217+ | 0.059 EUR |
| 1619+ | 0.044 EUR |
| 1806+ | 0.04 EUR |
| FDC6331L |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 2.8A
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Kind of integrated circuit: high-side
Kind of output: P-Channel
Type of integrated circuit: power switch
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 2.8A
Kind of package: reel; tape
auf Bestellung 1397 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 139+ | 0.51 EUR |
| 146+ | 0.49 EUR |
| 153+ | 0.47 EUR |
| 158+ | 0.45 EUR |
| 164+ | 0.44 EUR |
| SPS-READER-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Connection: pin header; SMA
development kits accessories features: Arduino Shield compatible
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Connection: pin header; SMA
development kits accessories features: Arduino Shield compatible
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| NCP163AMX300TBG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.155V
Number of channels: 1
Output voltage: 3V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.155V
Number of channels: 1
Output voltage: 3V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX500TBG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.105V
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.105V
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163ASN500T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; SOT23-5; SMD
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Output current: 0.25A
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX330TBG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.145V
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.145V
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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| NCP163AMX180TBG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 1.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 250mA; XDFN4; SMD
Protection: overheating OTP
Manufacturer series: NCP163
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.25A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 1.8V
Tolerance: ±2%
Input voltage: 2.2...5.5V
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