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LM317MBDTG | ONSEMI |
 Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 1.2...40V |
auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP4N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQB4N80TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FQI4N80TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MMBFJ175LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Polarisation: unipolar Drain current: 7mA Gate current: 50mA Power dissipation: 0.225W Gate-source voltage: 30V On-state resistance: 125Ω Kind of package: reel; tape Type of transistor: P-JFET Mounting: SMD Case: SOT23 |
auf Bestellung 503 Stücke: Lieferzeit 14-21 Tag (e) |
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| SMMBFJ175LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23 Polarisation: unipolar Drain-source voltage: -25V Drain current: -60mA Power dissipation: 0.225W Kind of channel: enhancement On-state resistance: 125Ω Kind of package: reel; tape Type of transistor: P-JFET Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NGTB40N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3 Case: TO247-3 Type of transistor: IGBT Kind of package: tube Mounting: THT Gate charge: 313nC Gate-emitter voltage: ±20V Collector current: 40A Power dissipation: 267W Pulsed collector current: 200A Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |
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NGTB40N120FL3WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3 Case: TO247-3 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Mounting: THT Gate charge: 212nC Gate-emitter voltage: ±20V Collector current: 40A Power dissipation: 227W Pulsed collector current: 160A Collector-emitter voltage: 1.2kV |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVBG040N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| NTBG040N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTHL040N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Pulsed drain current: 134A Power dissipation: 115W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVHL040N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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ESD8008MUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD Kind of package: reel; tape Version: ESD Mounting: SMD Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5.5...8.5V Number of channels: 8 Case: uDFN14 |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJF18008G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP Polarisation: bipolar Kind of package: tube Type of transistor: NPN Mounting: THT Collector current: 8A Current gain: 14...34 Power dissipation: 45W Collector-emitter voltage: 450V Frequency: 13MHz Case: TO220FP |
auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14043BDR2G | ONSEMI |
Category: Latches Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: RS latch Number of channels: 4 Number of inputs: 2 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Family: HEF4000B Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MUR1640CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 100A Case: TO220AB Reverse recovery time: 60ns Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14093BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Delay time: 100ns Family: HEF4000B |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC541ADWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC541WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SOIC20; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC541WM | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Manufacturer series: HC |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC541MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA Manufacturer series: HC |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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MM74HC541MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
Produkt ist nicht verfügbar |
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MC74HC541ADTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC74HC541ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC74HC541ADWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line receiver,line driver Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 1N5927BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
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1N4750A-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
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1N4750ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 27V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 27V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
Produkt ist nicht verfügbar |
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CAT24C08WI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
auf Bestellung 1789 Stücke: Lieferzeit 14-21 Tag (e) |
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| NV24C08DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NV24C08MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT24C08C4ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT24C08C4CTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT24C08C5ATR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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CAT24C08TDI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSOT23-5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| CAT24C08YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV24C08WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAV24C08YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MBRF30L60CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.73V Max. load current: 30A Max. forward impulse current: 0.24kA Kind of package: tube |
Produkt ist nicht verfügbar |
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| ULQ2003ADR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V |
Produkt ist nicht verfügbar |
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| MUR480ERLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 4A; reel,tape; Ifsm: 70A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 4A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 70A Case: DO201AD Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
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BZX84C43LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZBZX84C43ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
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| SZBZX84C43LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
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BAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.75V Max. forward impulse current: 2A Power dissipation: 0.225W Kind of package: reel; tape Max. load current: 0.45A |
Produkt ist nicht verfügbar |
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MC33064P-5G | ONSEMI |
 Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: TO92 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Kind of package: bulk Number of channels: 1 |
auf Bestellung 1348 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33064D-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...6.5V DC Case: SO8 Operating temperature: -40...85°C Mounting: SMD DC supply current: 390µA Maximum output current: 60mA Threshold on-voltage: 4.59V Number of channels: 1 |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Features of semiconductor devices: fast switching Power dissipation: 1.66W Kind of package: reel; tape |
auf Bestellung 2577 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW Type of diode: Schottky switching Semiconductor structure: single diode Mounting: SMD Case: SOT23 Max. off-state voltage: 70V Kind of package: reel; tape Load current: 70mA Max. forward impulse current: 0.1A Power dissipation: 0.225W Max. forward voltage: 0.41V |
auf Bestellung 5788 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C8V2LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.7µA |
auf Bestellung 755 Stücke: Lieferzeit 14-21 Tag (e) |
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| FAN7393AMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Mounting: SMD Case: SO14 Operating temperature: -40...150°C Kind of package: reel; tape Supply voltage: 12...20V Output current: 2.5A Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MC74HC393ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Quiescent current: 160µA Kind of package: reel; tape Supply voltage: 2...6V DC Kind of integrated circuit: asynchronous counter Technology: CMOS; TTL Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
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| MC74HC393ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Kind of package: reel; tape Number of inputs: 2 Supply voltage: 2...6V DC Kind of integrated circuit: 4-stage; binary ripple counter Technology: CMOS Family: HC Manufacturer series: HC |
Produkt ist nicht verfügbar |
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NTJS4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14490DWG | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: contact bounce eliminator Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14490DWR2G | ONSEMI |
Category: Other logic integrated circuits Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: contact bounce eliminator; hex Number of channels: 1 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MMBFJ177 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 1.5mA Power dissipation: 0.225W Case: SOT23 On-state resistance: 300Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA Gate-source voltage: 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDA16N50-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FDA16N50LDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LM317MBDTG |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
auf Bestellung 740 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 228+ | 0.31 EUR |
| 271+ | 0.26 EUR |
| 350+ | 0.2 EUR |
| FQP4N80 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| FQB4N80TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQI4N80TU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBFJ175LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Polarisation: unipolar
Drain current: 7mA
Gate current: 50mA
Power dissipation: 0.225W
Gate-source voltage: 30V
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
auf Bestellung 503 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 394+ | 0.18 EUR |
| 447+ | 0.16 EUR |
| 472+ | 0.15 EUR |
| 503+ | 0.14 EUR |
| SMMBFJ175LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -60mA
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; -25V; -60mA; 225mW; SOT23
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -60mA
Power dissipation: 0.225W
Kind of channel: enhancement
On-state resistance: 125Ω
Kind of package: reel; tape
Type of transistor: P-JFET
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB40N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Case: TO247-3
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 313nC
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 267W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Case: TO247-3
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 313nC
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 267W
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB40N120FL3WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Case: TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 212nC
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 227W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3
Case: TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 212nC
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 227W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.97 EUR |
| 10+ | 7.18 EUR |
| NTHL040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBG040N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBG040N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL040N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL040N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD8008MUTAG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Number of channels: 8
Case: uDFN14
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Kind of package: reel; tape
Version: ESD
Mounting: SMD
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.5V
Number of channels: 8
Case: uDFN14
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 126+ | 0.57 EUR |
| MJF18008G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Current gain: 14...34
Power dissipation: 45W
Collector-emitter voltage: 450V
Frequency: 13MHz
Case: TO220FP
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 8A; 45W; TO220FP
Polarisation: bipolar
Kind of package: tube
Type of transistor: NPN
Mounting: THT
Collector current: 8A
Current gain: 14...34
Power dissipation: 45W
Collector-emitter voltage: 450V
Frequency: 13MHz
Case: TO220FP
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.45 EUR |
| 35+ | 2.1 EUR |
| 50+ | 1.89 EUR |
| MC14043BDR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Family: HEF4000B
Kind of package: reel; tape
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Family: HEF4000B
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR1640CTG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; tube; Ifsm: 100A; TO220AB; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.12 EUR |
| 40+ | 1.79 EUR |
| 50+ | 1.53 EUR |
| 100+ | 1.47 EUR |
| MC14093BDTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Delay time: 100ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC541ADWG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 144+ | 0.5 EUR |
| 156+ | 0.46 EUR |
| 163+ | 0.44 EUR |
| 186+ | 0.38 EUR |
| 266+ | 0.34 EUR |
| MM74HC541WMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SOIC20; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SOIC20; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
auf Bestellung 937 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 88+ | 0.82 EUR |
| 123+ | 0.58 EUR |
| MM74HC541WM |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| MM74HC541MTC |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Manufacturer series: HC
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 103+ | 0.7 EUR |
| 104+ | 0.69 EUR |
| MM74HC541MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC541ADTG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC541ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC541ADWR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line receiver,line driver
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; line receiver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: HC
Manufacturer series: HC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5927BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4750A-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; Ammo Pack; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4750ATR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 27V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 27V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C08WI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 244+ | 0.29 EUR |
| 264+ | 0.27 EUR |
| 280+ | 0.26 EUR |
| 302+ | 0.24 EUR |
| 307+ | 0.23 EUR |
| NV24C08DWVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NV24C08MUW3VLTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C08C4ATR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C08C4CTR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C08C5ATR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C08TDI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT24C08YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C08WE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAV24C08YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| MBRF30L60CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220FP; Ufmax: 0.73V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.73V
Max. load current: 30A
Max. forward impulse current: 0.24kA
Kind of package: tube
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| ULQ2003ADR2G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
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| MUR480ERLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; Ifsm: 70A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO201AD
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 4A; reel,tape; Ifsm: 70A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 4A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 70A
Case: DO201AD
Reverse recovery time: 100ns
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| BZX84C43LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 873+ | 0.082 EUR |
| SZBZX84C43ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C43LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 43V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| BAV99LT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.75V; 225mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.75V
Max. forward impulse current: 2A
Power dissipation: 0.225W
Kind of package: reel; tape
Max. load current: 0.45A
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| MC33064P-5G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Kind of package: bulk
Number of channels: 1
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 134+ | 0.54 EUR |
| 149+ | 0.48 EUR |
| 171+ | 0.42 EUR |
| MC33064D-5G | |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷6.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...6.5V DC
Case: SO8
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 390µA
Maximum output current: 60mA
Threshold on-voltage: 4.59V
Number of channels: 1
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 150+ | 0.48 EUR |
| 154+ | 0.46 EUR |
| ES3D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 2577 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 170+ | 0.42 EUR |
| 242+ | 0.3 EUR |
| 278+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| BAS70LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.225W
Max. forward voltage: 0.41V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; reel,tape; 225mW
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.225W
Max. forward voltage: 0.41V
auf Bestellung 5788 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 715+ | 0.1 EUR |
| 863+ | 0.083 EUR |
| 1055+ | 0.068 EUR |
| 1174+ | 0.061 EUR |
| 1389+ | 0.051 EUR |
| 1613+ | 0.044 EUR |
| 1924+ | 0.037 EUR |
| 3000+ | 0.03 EUR |
| BZX84C8V2LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23; single diode; 0.7uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.7µA
auf Bestellung 755 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 755+ | 0.094 EUR |
| FAN7393AMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Kind of package: reel; tape
Supply voltage: 12...20V
Output current: 2.5A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| MC74HC393ADR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Family: HC
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; asynchronous counter; Ch: 2; CMOS,TTL; HC; SMD; SO14; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 160µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Kind of integrated circuit: asynchronous counter
Technology: CMOS; TTL
Family: HC
Manufacturer series: HC
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| MC74HC393ADTR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Family: HC
Manufacturer series: HC
Category: Counters/dividers
Description: IC: digital; 4-stage,binary ripple counter; Ch: 2; IN: 2; CMOS; HC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 2
Supply voltage: 2...6V DC
Kind of integrated circuit: 4-stage; binary ripple counter
Technology: CMOS
Family: HC
Manufacturer series: HC
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| NTJS4151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 1W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 160+ | 0.44 EUR |
| MC14490DWG |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator; CMOS; 3÷18VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
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| MC14490DWR2G |
|
Hersteller: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Other logic integrated circuits
Description: IC: digital; contact bounce eliminator,hex; Ch: 1; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: contact bounce eliminator; hex
Number of channels: 1
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MMBFJ177 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 1.5mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 300Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Produkt ist nicht verfügbar
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| FDA16N50-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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Im Einkaufswagen
Stück im Wert von UAH
| FDA16N50LDTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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Im Einkaufswagen
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