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NVLJWD040N06CLTAG ONSEMI nvljwd040n06cl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 54A
Produkt ist nicht verfügbar
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GRUBSS138 ONSEMI Category: Unclassified
Description: GRUBSS138
auf Bestellung 474000 Stücke:
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3000+0.036 EUR
Mindestbestellmenge: 3000
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MARBSS138LT1G ONSEMI Category: Unclassified
Description: MARBSS138LT1G
auf Bestellung 6000 Stücke:
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3000+0.047 EUR
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FAN7930CMX-G ONSEMI fan7930c-d.pdf Category: Unclassified
Description: FAN7930CMX-G
auf Bestellung 2500 Stücke:
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2500+0.73 EUR
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MM3Z10VT1G MM3Z10VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6973 Stücke:
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556+0.13 EUR
705+0.1 EUR
1000+0.072 EUR
1174+0.061 EUR
1719+0.042 EUR
2891+0.025 EUR
3049+0.023 EUR
Mindestbestellmenge: 556
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MM3Z12VST1G MM3Z12VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
auf Bestellung 90 Stücke:
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MM3Z18VT1G MM3Z18VT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 1905 Stücke:
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554+0.13 EUR
910+0.079 EUR
1553+0.046 EUR
1905+0.037 EUR
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NCV4949CDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
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NCV4949CPDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
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NTH4L075N065SC1 ONSEMI nth4l075n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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MC74HCT595ADTG MC74HCT595ADTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADB300D3&compId=MC74HCT595A-D.pdf?ci_sign=a43759432b7bb8525ba07cf709ed5f792945d1e1 Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 268 Stücke:
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56+1.29 EUR
89+0.8 EUR
124+0.58 EUR
131+0.55 EUR
133+0.54 EUR
192+0.52 EUR
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MC74HCT595ADG MC74HCT595ADG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CCF0EB460D3&compId=MC74HCT595A-D.pdf?ci_sign=f5e4afa0f03c8a1ed1888b8c44af83dd026b0eff Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 90 Stücke:
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90+0.8 EUR
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MMBT4401M3T5G ONSEMI mmbt4401m3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
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MMBT4401WT1G ONSEMI mmbt4401wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT4401WT1G ONSEMI MMBT4401WT1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BCP53-16T3G ONSEMI bcp53t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 28000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.17 EUR
Mindestbestellmenge: 4000
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VALSBCP53-16T1G ONSEMI Category: Unclassified
Description: VALSBCP53-16T1G
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.18 EUR
Mindestbestellmenge: 1000
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NSVMMBTH81LT1G ONSEMI mmbth81-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMBTA13 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA812C2037318469&compId=MMBTA13.pdf?ci_sign=34bd660c1993a0284b983bd12f47500f5a05a5a9 Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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SMMBTA13LT1G ONSEMI mmbta13lt1-d.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA13LT3G ONSEMI mmbta13lt1-d.pdf Category: Transistors - Unclassified
Description: MMBTA13LT3G
auf Bestellung 1660000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.034 EUR
Mindestbestellmenge: 10000
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NVMFD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS024N06CT1G ONSEMI nvmfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJS1D4N06CLTWG ONSEMI nvmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS014N06CLTWG ONSEMI nvmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS024N06CTAG ONSEMI nvtfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMJST1D4N06CLTXG ONSEMI nvmjst1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NRTS30120MFST3G ONSEMI nrts30120mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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NRVTS30120MFST3G ONSEMI nrvts30120mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ4680T1G MMSZ4680T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
610+0.12 EUR
695+0.1 EUR
1244+0.057 EUR
1799+0.04 EUR
1985+0.036 EUR
Mindestbestellmenge: 556
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GRUMC78L05ACDR2G ONSEMI Category: Unclassified
Description: GRUMC78L05ACDR2G
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.15 EUR
Mindestbestellmenge: 2500
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FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
Produkt ist nicht verfügbar
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DTA114EM3T5G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSBA114EDP6T5G ONSEMI dta114ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSVDTA114EET1G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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NSVDTA114EM3T5G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74ACT541SC 74ACT541SC ONSEMI 74act541-d.pdf FAIRS25848-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
57+1.27 EUR
103+0.7 EUR
109+0.66 EUR
1064+0.64 EUR
Mindestbestellmenge: 36
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FOD3120SV ONSEMI fod3120-d.pdf Category: Unclassified
Description: FOD3120SV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.82 EUR
Mindestbestellmenge: 1000
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FOD3120TSV ONSEMI fod3120-d.pdf Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.83 EUR
Mindestbestellmenge: 1000
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FOD3184SDV ONSEMI fod3184-d.pdf Category: Optocouplers - Unclassified
Description: FOD3184SDV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.06 EUR
Mindestbestellmenge: 1000
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GRUBAS40-04LT1G ONSEMI Category: Unclassified
Description: GRUBAS40-04LT1G
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.032 EUR
Mindestbestellmenge: 6000
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FAN7688SJX ONSEMI fan7688-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOP16
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LMV324DTBR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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LMV324DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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NCV33079DR2G ONSEMI mc33078-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
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NCP340MUTBG ONSEMI ncp340-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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J111-D26Z J111-D26Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Produkt ist nicht verfügbar
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J111-D74Z J111-D74Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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H11G1M H11G1M ONSEMI pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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H11G1M H11G1M ONSEMI pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40C40D6&compId=H11G1M.pdf?ci_sign=1dfe61e44bd2a3298cba20b310fb5d6f1e5d3afe Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
100+0.72 EUR
115+0.63 EUR
131+0.55 EUR
139+0.52 EUR
Mindestbestellmenge: 61
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H11G1SR2M H11G1SR2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40D80D6&compId=H11G1SR2M.pdf?ci_sign=5422feba83a7372f2023a6017d827788afb0c2f9 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
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FCMT080N65S3 ONSEMI fcmt080n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT180N65S3 ONSEMI fcmt180n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N65FL1-F154 ONSEMI fcpf380n65fl1-f154-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LCX125MTCX 74LCX125MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
182+0.39 EUR
194+0.37 EUR
212+0.34 EUR
222+0.32 EUR
269+0.27 EUR
285+0.25 EUR
Mindestbestellmenge: 132
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74LCX125MTC 74LCX125MTC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Quiescent current: 10µA
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
186+0.38 EUR
203+0.35 EUR
216+0.33 EUR
242+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 129
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BC847BWT1G BC847BWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2728 Stücke:
Lieferzeit 14-21 Tag (e)
823+0.087 EUR
1191+0.06 EUR
1352+0.053 EUR
1786+0.04 EUR
2009+0.036 EUR
2552+0.028 EUR
2728+0.026 EUR
Mindestbestellmenge: 823
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MC74LVX125DR2G ONSEMI mc74lvx125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.16 EUR
Mindestbestellmenge: 2500
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NSVBC847BLT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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GRUBC857CLT1G ONSEMI Category: Unclassified
Description: GRUBC857CLT1G
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.022 EUR
Mindestbestellmenge: 6000
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NVLJWD040N06CLTAG nvljwd040n06cl-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 54A
Produkt ist nicht verfügbar
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GRUBSS138
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBSS138
auf Bestellung 474000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.036 EUR
Mindestbestellmenge: 3000
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MARBSS138LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MARBSS138LT1G
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.047 EUR
Mindestbestellmenge: 3000
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FAN7930CMX-G fan7930c-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FAN7930CMX-G
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.73 EUR
Mindestbestellmenge: 2500
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MM3Z10VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z10VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
705+0.1 EUR
1000+0.072 EUR
1174+0.061 EUR
1719+0.042 EUR
2891+0.025 EUR
3049+0.023 EUR
Mindestbestellmenge: 556
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MM3Z12VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z12VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.5W
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±2%
Zener voltage: 12V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
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MM3Z18VT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z18VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 1905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
554+0.13 EUR
910+0.079 EUR
1553+0.046 EUR
1905+0.037 EUR
Mindestbestellmenge: 554
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NCV4949CDR2G ncv4949c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Produkt ist nicht verfügbar
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NCV4949CPDR2G ncv4949c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of package: reel; tape
Case: SO8
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Produkt ist nicht verfügbar
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NTH4L075N065SC1 nth4l075n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MC74HCT595ADTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADB300D3&compId=MC74HCT595A-D.pdf?ci_sign=a43759432b7bb8525ba07cf709ed5f792945d1e1
MC74HCT595ADTG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
89+0.8 EUR
124+0.58 EUR
131+0.55 EUR
133+0.54 EUR
192+0.52 EUR
Mindestbestellmenge: 56
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MC74HCT595ADG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CCF0EB460D3&compId=MC74HCT595A-D.pdf?ci_sign=f5e4afa0f03c8a1ed1888b8c44af83dd026b0eff
MC74HCT595ADG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
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MMBT4401M3T5G mmbt4401m3-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBT4401WT1G mmbt4401wt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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NSVMMBT4401WT1G MMBT4401WT1-D.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BCP53-16T3G bcp53t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 28000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.17 EUR
Mindestbestellmenge: 4000
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VALSBCP53-16T1G
Hersteller: ONSEMI
Category: Unclassified
Description: VALSBCP53-16T1G
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.18 EUR
Mindestbestellmenge: 1000
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NSVMMBTH81LT1G mmbth81-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA13 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BA812C2037318469&compId=MMBTA13.pdf?ci_sign=34bd660c1993a0284b983bd12f47500f5a05a5a9
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Produkt ist nicht verfügbar
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SMMBTA13LT1G mmbta13lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA13LT3G mmbta13lt1-d.pdf
Hersteller: ONSEMI
Category: Transistors - Unclassified
Description: MMBTA13LT3G
auf Bestellung 1660000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.034 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD024N06CT1G nvmfd024n06c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS024N06CT1G nvmfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJS1D4N06CLTWG nvmjs1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMYS014N06CLTWG nvmys014n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS024N06CTAG nvtfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJST1D4N06CLTXG nvmjst1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NRTS30120MFST3G nrts30120mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVTS30120MFST3G nrvts30120mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ4680T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4680T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
610+0.12 EUR
695+0.1 EUR
1244+0.057 EUR
1799+0.04 EUR
1985+0.036 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
GRUMC78L05ACDR2G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMC78L05ACDR2G
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.15 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
Produkt ist nicht verfügbar
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DTA114EM3T5G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSBA114EDP6T5G dta114ed-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSVDTA114EET1G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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NSVDTA114EM3T5G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74ACT541SC 74act541-d.pdf FAIRS25848-1.pdf?t.download=true&u=5oefqw
74ACT541SC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
57+1.27 EUR
103+0.7 EUR
109+0.66 EUR
1064+0.64 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SV fod3120-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FOD3120SV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.82 EUR
Mindestbestellmenge: 1000
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FOD3120TSV fod3120-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.83 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FOD3184SDV fod3184-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3184SDV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.06 EUR
Mindestbestellmenge: 1000
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GRUBAS40-04LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBAS40-04LT1G
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.032 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
FAN7688SJX fan7688-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOP16
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LMV324DTBR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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LMV324DR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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NCV33079DR2G mc33078-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
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NCP340MUTBG ncp340-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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J111-D26Z MMBFJ113-D.PDF
J111-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Produkt ist nicht verfügbar
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J111-D74Z MMBFJ113-D.PDF
J111-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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H11G1M pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1
H11G1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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H11G1M pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40C40D6&compId=H11G1M.pdf?ci_sign=1dfe61e44bd2a3298cba20b310fb5d6f1e5d3afe
H11G1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
100+0.72 EUR
115+0.63 EUR
131+0.55 EUR
139+0.52 EUR
Mindestbestellmenge: 61
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H11G1SR2M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40D80D6&compId=H11G1SR2M.pdf?ci_sign=5422feba83a7372f2023a6017d827788afb0c2f9
H11G1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
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FCMT080N65S3 fcmt080n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT180N65S3 fcmt180n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N65FL1-F154 fcpf380n65fl1-f154-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LCX125MTCX pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf
74LCX125MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
182+0.39 EUR
194+0.37 EUR
212+0.34 EUR
222+0.32 EUR
269+0.27 EUR
285+0.25 EUR
Mindestbestellmenge: 132
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74LCX125MTC pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf
74LCX125MTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Quiescent current: 10µA
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
186+0.38 EUR
203+0.35 EUR
216+0.33 EUR
242+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 129
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BC847BWT1G bc846awt1-d.pdf
BC847BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
823+0.087 EUR
1191+0.06 EUR
1352+0.053 EUR
1786+0.04 EUR
2009+0.036 EUR
2552+0.028 EUR
2728+0.026 EUR
Mindestbestellmenge: 823
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MC74LVX125DR2G mc74lvx125-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.16 EUR
Mindestbestellmenge: 2500
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NSVBC847BLT3G bc846alt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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GRUBC857CLT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBC857CLT1G
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.022 EUR
Mindestbestellmenge: 6000
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