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SE5532AD8R2G ONSEMI ne5532-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Produkt ist nicht verfügbar
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MMBT4403M3T5G ONSEMI mmbt4403m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MMBT4403WT1G ONSEMI mmbt4403wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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MMBT5401LT3G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 500mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
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10000+0.026 EUR
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NCP1079BBP130G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
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NVLJWD040N06CLTAG ONSEMI nvljwd040n06cl-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Pulsed drain current: 54A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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GRUBSS138 ONSEMI Category: Unclassified
Description: GRUBSS138
auf Bestellung 474000 Stücke:
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3000+0.038 EUR
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MARBSS138LT1G ONSEMI Category: Unclassified
Description: MARBSS138LT1G
auf Bestellung 6000 Stücke:
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3000+0.05 EUR
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FAN7930CMX-G ONSEMI fan7930c-d.pdf Category: Unclassified
Description: FAN7930CMX-G
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2500+0.66 EUR
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MM3Z18VT1G MM3Z18VT1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
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150+0.47 EUR
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NCV4949CDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
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NCV4949CPDR2G ONSEMI ncv4949c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTH4L075N065SC1 ONSEMI nth4l075n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
On-state resistance: 68mΩ
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Power dissipation: 74W
Pulsed drain current: 120A
Produkt ist nicht verfügbar
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MC74HCT595ADTG MC74HCT595ADTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADB300D3&compId=MC74HCT595A-D.pdf?ci_sign=a43759432b7bb8525ba07cf709ed5f792945d1e1 Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Case: TSSOP16
Type of integrated circuit: digital
Family: HCT
Mounting: SMD
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Number of inputs: 5
Technology: CMOS; TTL
Kind of output: 3-state
auf Bestellung 268 Stücke:
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56+1.29 EUR
89+0.8 EUR
118+0.61 EUR
133+0.54 EUR
192+0.53 EUR
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MC74HCT595ADG MC74HCT595ADG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CCF0EB460D3&compId=MC74HCT595A-D.pdf?ci_sign=f5e4afa0f03c8a1ed1888b8c44af83dd026b0eff Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Case: SOIC16
Type of integrated circuit: digital
Family: HCT
Mounting: SMD
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Number of inputs: 5
Technology: CMOS; TTL
Kind of output: 3-state
auf Bestellung 88 Stücke:
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88+0.82 EUR
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MMBT4401M3T5G ONSEMI mmbt4401m3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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MMBT4401WT1G ONSEMI mmbt4401wt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT4401WT1G ONSEMI MMBT4401WT1-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BCP53-16T3G ONSEMI bcp53t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 28000 Stücke:
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4000+0.17 EUR
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NVMFD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS024N06CT1G ONSEMI nvmfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMJS1D4N06CLTWG ONSEMI nvmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMYS014N06CLTWG ONSEMI nvmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS024N06CTAG ONSEMI nvtfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMJST1D4N06CLTXG ONSEMI nvmjst1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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NRTS30120MFST3G ONSEMI nrts30120mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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NRVTS30120MFST3G ONSEMI nrvts30120mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
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FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
Produkt ist nicht verfügbar
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74ACT541SC 74ACT541SC ONSEMI 74act541-d.pdf FAIRS25848-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
auf Bestellung 1534 Stücke:
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39+1.87 EUR
61+1.17 EUR
71+1.02 EUR
76+0.95 EUR
114+0.81 EUR
266+0.72 EUR
532+0.65 EUR
1064+0.63 EUR
Mindestbestellmenge: 39
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FOD3120SV ONSEMI fod3120-d.pdf Category: Unclassified
Description: FOD3120SV
auf Bestellung 2000 Stücke:
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1000+0.83 EUR
Mindestbestellmenge: 1000
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FOD3120TSV ONSEMI fod3120-d.pdf Category: Optocouplers - Unclassified
Description: FOD3120TSV
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1000+0.83 EUR
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FOD3184SDV ONSEMI fod3184-d.pdf Category: Optocouplers - Unclassified
Description: FOD3184SDV
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1000+0.96 EUR
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GRUBAS40-04LT1G ONSEMI Category: Unclassified
Description: GRUBAS40-04LT1G
auf Bestellung 21000 Stücke:
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3000+0.034 EUR
Mindestbestellmenge: 3000
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FAN7688SJX ONSEMI fan7688-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Case: SOP16
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LMV324DTBR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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LMV324DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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NCV33079DR2G ONSEMI mc33078-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Integrated circuit features: low noise
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
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NCP340MUTBG ONSEMI ncp340-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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J111-D26Z J111-D26Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
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J111-D74Z J111-D74Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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FCPF380N65FL1-F154 ONSEMI fcpf380n65fl1-f154-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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74LCX125MTCX 74LCX125MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 4
Case: TSSOP14
Quiescent current: 10µA
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
196+0.37 EUR
210+0.34 EUR
230+0.31 EUR
240+0.3 EUR
Mindestbestellmenge: 143
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BC847BWT1G BC847BWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 8700 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
1316+0.054 EUR
1471+0.049 EUR
1938+0.037 EUR
2165+0.033 EUR
2763+0.026 EUR
3031+0.024 EUR
3497+0.02 EUR
6000+0.019 EUR
Mindestbestellmenge: 1000
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NSVBC847BLT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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FDP025N06 ONSEMI fdp025n06-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL025N065SC1 ONSEMI nthl025n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L025N065SC1 ONSEMI nth4l025n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVH4L025N065SC1 ONSEMI nvh4l025n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVMYS025N06CLTWG ONSEMI nvmys025n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RFD16N05LSM9A RFD16N05LSM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DED89819534745&compId=RFD16N05LSM.pdf?ci_sign=32c18ccd0ce4e1c084e81432ae4b32379f5f3710 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 56mΩ
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 60W
Kind of channel: enhancement
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
68+1.06 EUR
75+0.96 EUR
93+0.77 EUR
Mindestbestellmenge: 55
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NVBLS4D0N15MC ONSEMI nvbls4d0n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM211DR2G ONSEMI lm211-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Kind of package: reel; tape
Input offset current: 1.7nA
Input bias current: 45nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC78M15BDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33039DR2G ONSEMI mc33039-d.pdf Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SO8
Output current: 10mA
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 5.5...9V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RSL10-SENSE-DB-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RSL10-SENSE-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC4051DR2G ONSEMI mc74vhc4051-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
1N4936G 1N4936G ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.24 EUR
Mindestbestellmenge: 290
Im Einkaufswagen  Stück im Wert von  UAH
1N4936RLG 1N4936RLG ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
556+0.13 EUR
603+0.12 EUR
797+0.09 EUR
1009+0.071 EUR
1137+0.063 EUR
2000+0.055 EUR
Mindestbestellmenge: 455
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NTP190N65S3HF ONSEMI ntp190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Produkt ist nicht verfügbar
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SE5532AD8R2G ne5532-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Produkt ist nicht verfügbar
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MMBT4403M3T5G mmbt4403m3-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT4403WT1G mmbt4403wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
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MMBT5401LT3G mmbt5401lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 500mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 60
Mounting: SMD
auf Bestellung 160000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.026 EUR
Mindestbestellmenge: 10000
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NCP1079BBP130G ncp1076a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 1.05A
Case: DIP8
Mounting: SMD
Frequency: 117...143kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 3.9Ω
Operating voltage: 6.5...20V DC
Produkt ist nicht verfügbar
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NVLJWD040N06CLTAG nvljwd040n06cl-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 18A; Idm: 54A; 12W; WDFNW6
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 18A
Power dissipation: 12W
Case: WDFNW6
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Pulsed drain current: 54A
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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GRUBSS138
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBSS138
auf Bestellung 474000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.038 EUR
Mindestbestellmenge: 3000
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MARBSS138LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MARBSS138LT1G
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.05 EUR
Mindestbestellmenge: 3000
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FAN7930CMX-G fan7930c-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FAN7930CMX-G
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.66 EUR
Mindestbestellmenge: 2500
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MM3Z18VT1G MM3ZxxT1G.PDF
MM3Z18VT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.47 EUR
Mindestbestellmenge: 150
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NCV4949CDR2G ncv4949c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCV4949CPDR2G ncv4949c-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; Ch: 1
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SO8
Type of integrated circuit: voltage regulator
Output current: 0.1A
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NTH4L075N065SC1 nth4l075n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
On-state resistance: 68mΩ
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Power dissipation: 74W
Pulsed drain current: 120A
Produkt ist nicht verfügbar
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MC74HCT595ADTG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC9ADB300D3&compId=MC74HCT595A-D.pdf?ci_sign=a43759432b7bb8525ba07cf709ed5f792945d1e1
MC74HCT595ADTG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; HCT; -55÷125°C; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Case: TSSOP16
Type of integrated circuit: digital
Family: HCT
Mounting: SMD
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Number of inputs: 5
Technology: CMOS; TTL
Kind of output: 3-state
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
89+0.8 EUR
118+0.61 EUR
133+0.54 EUR
192+0.53 EUR
Mindestbestellmenge: 56
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MC74HCT595ADG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CCF0EB460D3&compId=MC74HCT595A-D.pdf?ci_sign=f5e4afa0f03c8a1ed1888b8c44af83dd026b0eff
MC74HCT595ADG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; HCT; -55÷125°C; tube
Operating temperature: -55...125°C
Manufacturer series: HCT
Kind of package: tube
Case: SOIC16
Type of integrated circuit: digital
Family: HCT
Mounting: SMD
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Number of inputs: 5
Technology: CMOS; TTL
Kind of output: 3-state
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
Mindestbestellmenge: 88
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MMBT4401M3T5G mmbt4401m3-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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MMBT4401WT1G mmbt4401wt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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NSVMMBT4401WT1G MMBT4401WT1-D.PDF
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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BCP53-16T3G bcp53t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 28000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.17 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD024N06CT1G nvmfd024n06c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS024N06CT1G nvmfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJS1D4N06CLTWG nvmjs1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMYS014N06CLTWG nvmys014n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS024N06CTAG nvtfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJST1D4N06CLTXG nvmjst1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NRTS30120MFST3G nrts30120mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVTS30120MFST3G nrvts30120mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
Produkt ist nicht verfügbar
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74ACT541SC 74act541-d.pdf FAIRS25848-1.pdf?t.download=true&u=5oefqw
74ACT541SC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
auf Bestellung 1534 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.87 EUR
61+1.17 EUR
71+1.02 EUR
76+0.95 EUR
114+0.81 EUR
266+0.72 EUR
532+0.65 EUR
1064+0.63 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120SV fod3120-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FOD3120SV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.83 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FOD3120TSV fod3120-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.83 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FOD3184SDV fod3184-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3184SDV
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GRUBAS40-04LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBAS40-04LT1G
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.034 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FAN7688SJX fan7688-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Case: SOP16
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV324DTBR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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LMV324DR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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NCV33079DR2G mc33078-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Integrated circuit features: low noise
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
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NCP340MUTBG ncp340-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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J111-D26Z MMBFJ113-D.PDF
J111-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Produkt ist nicht verfügbar
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J111-D74Z MMBFJ113-D.PDF
J111-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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FCPF380N65FL1-F154 fcpf380n65fl1-f154-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LCX125MTCX pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf
74LCX125MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 4
Case: TSSOP14
Quiescent current: 10µA
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Kind of output: 3-state
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
196+0.37 EUR
210+0.34 EUR
230+0.31 EUR
240+0.3 EUR
Mindestbestellmenge: 143
Im Einkaufswagen  Stück im Wert von  UAH
BC847BWT1G bc846awt1-d.pdf
BC847BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 8700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.072 EUR
1316+0.054 EUR
1471+0.049 EUR
1938+0.037 EUR
2165+0.033 EUR
2763+0.026 EUR
3031+0.024 EUR
3497+0.02 EUR
6000+0.019 EUR
Mindestbestellmenge: 1000
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NSVBC847BLT3G bc846alt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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FDP025N06 fdp025n06-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL025N065SC1 nthl025n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L025N065SC1 nth4l025n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVH4L025N065SC1 nvh4l025n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVMYS025N06CLTWG nvmys025n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RFD16N05LSM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DED89819534745&compId=RFD16N05LSM.pdf?ci_sign=32c18ccd0ce4e1c084e81432ae4b32379f5f3710
RFD16N05LSM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 56mΩ
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 60W
Kind of channel: enhancement
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
68+1.06 EUR
75+0.96 EUR
93+0.77 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
NVBLS4D0N15MC nvbls4d0n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM211DR2G lm211-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Kind of package: reel; tape
Input offset current: 1.7nA
Input bias current: 45nA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC78M15BDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC33039DR2G mc33039-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 10mA; 5.5÷9VDC
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SO8
Output current: 10mA
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Operating voltage: 5.5...9V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RSL10-SENSE-DB-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RSL10-SENSE-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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MC74VHC4051DR2G mc74vhc4051-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
1N4936G 1N4933_7.PDF
1N4936G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.24 EUR
Mindestbestellmenge: 290
Im Einkaufswagen  Stück im Wert von  UAH
1N4936RLG 1N4933_7.PDF
1N4936RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
556+0.13 EUR
603+0.12 EUR
797+0.09 EUR
1009+0.071 EUR
1137+0.063 EUR
2000+0.055 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
NTP190N65S3HF ntp190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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