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CAV25256VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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BAS116LT1G BAS116LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 197 Stücke:
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197+0.36 EUR
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BAS116TT1G ONSEMI bas116tt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAS116LT1G SBAS116LT1G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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NSVBAS116LT3G ONSEMI bas116lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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1N5956BRLG 1N5956BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
auf Bestellung 5232 Stücke:
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417+0.17 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 417
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FSB50550AS ONSEMI fsb50550as-d.pdf Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Operating temperature: -40...125°C
Mounting: SMD
Output current: 2A
Case: Gull wing; PowerSMD
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Integrated circuit features: MOSFET
auf Bestellung 15750 Stücke:
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450+7.68 EUR
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SMF05CT2G ONSEMI smf05c-d.pdf Category: Diodes - Unclassified
Description: SMF05CT2G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
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NTPF125N65S3H ONSEMI ntpf125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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NC7S32M5X NC7S32M5X ONSEMI NC7S32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
736+0.097 EUR
820+0.087 EUR
985+0.073 EUR
1276+0.056 EUR
1450+0.049 EUR
1568+0.046 EUR
1662+0.043 EUR
Mindestbestellmenge: 625
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NL17SG32DFT2G NL17SG32DFT2G ONSEMI NL17SG32-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2988 Stücke:
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209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
745+0.096 EUR
1000+0.072 EUR
Mindestbestellmenge: 209
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NTMFS5C670NLT1G NTMFS5C670NLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 50A
Drain-source voltage: 60V
Gate charge: 20nC
Type of transistor: N-MOSFET
On-state resistance: 8.8mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 440A
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 1654 Stücke:
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25+2.95 EUR
39+1.86 EUR
43+1.69 EUR
100+1.46 EUR
500+1.33 EUR
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NTP165N65S3H NTP165N65S3H ONSEMI ntp165n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 86 Stücke:
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20+3.59 EUR
22+3.37 EUR
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FDMS007N08LC ONSEMI fdms007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NUP4301MR6T1G NUP4301MR6T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2 Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
auf Bestellung 2750 Stücke:
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228+0.31 EUR
261+0.27 EUR
304+0.24 EUR
397+0.18 EUR
603+0.12 EUR
658+0.11 EUR
Mindestbestellmenge: 228
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FDP22N50N FDP22N50N ONSEMI FDP22N50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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16+4.5 EUR
19+3.93 EUR
Mindestbestellmenge: 16
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FGH75T65SQD-F155 ONSEMI fgh75t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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FGH75T65SHD-F155 ONSEMI fgh75t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SQDT-F155 ONSEMI fgh75t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHDT-F155 ONSEMI fgh75t65shdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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NCP1076P065G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
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NCP3065DR2G NCP3065DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5CE0AE776030A17&compId=NCP3065.PDF?ci_sign=286f04e7853b7d9f6988b93b64fa3963eebf3944 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 110...190kHz
Number of channels: 1
Operating voltage: 3...40V DC
auf Bestellung 1992 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
61+1.19 EUR
66+1.09 EUR
Mindestbestellmenge: 44
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MC14543BDG MC14543BDG ONSEMI mc14543b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4
Mounting: SMD
Kind of integrated circuit: BCD to 7-segment; decoder; display driver
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 1
Number of inputs: 4
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
194+0.37 EUR
213+0.34 EUR
226+0.32 EUR
240+0.3 EUR
247+0.29 EUR
288+0.28 EUR
480+0.27 EUR
Mindestbestellmenge: 136
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NTR5198NLT1G NTR5198NLT1G ONSEMI ntr5198nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 2809 Stücke:
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186+0.39 EUR
319+0.22 EUR
391+0.18 EUR
516+0.14 EUR
596+0.12 EUR
650+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 186
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NVR5198NLT1G NVR5198NLT1G ONSEMI NVR5198NL.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
auf Bestellung 1493 Stücke:
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152+0.47 EUR
224+0.32 EUR
302+0.24 EUR
397+0.18 EUR
Mindestbestellmenge: 152
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NTR0202PLT1G NTR0202PLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABD57F79D57B80D3&compId=NTR0202PL.PDF?ci_sign=c89bac867850fdce5262bd307008ebf3c1178ec0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
715+0.1 EUR
887+0.081 EUR
981+0.073 EUR
Mindestbestellmenge: 625
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FOD8802A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F6CE77AC0C7&compId=FOD8802A.pdf?ci_sign=dc6aa0d1e480bf10e0be0bd4e383c0ad4776d3bd Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Collector-emitter voltage: 75V
Insulation voltage: 2.5kV
Slew rate: 10kV/μs
Manufacturer series: FOD8802
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 6µs
Turn-off time: 40µs
Number of channels: 2
CTR@If: 35-230%@1mA
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FDMS7698 ONSEMI FAIR-S-A0002363800-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 29W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMTSC4D3N15MC ONSEMI ntmtsc4d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
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MC14001UBDG MC14001UBDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
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NTBLS4D0N15MC ONSEMI ntbls4d0n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NSVRB521S30T1G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
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2SC3647S-TD-E 2SC3647S-TD-E ONSEMI 2sa1417-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
116+0.62 EUR
179+0.4 EUR
250+0.34 EUR
500+0.33 EUR
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FSA2269L10X ONSEMI FAIR-S-A0000011123-1.pdf?t.download=true&u=5oefqw Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
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MC74LVXT4051DR2G MC74LVXT4051DR2G ONSEMI mc74lvxt4051-d.pdf Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
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MC74LVXT4051DTR2G ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
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KSA1281YTA KSA1281YTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE2D621F02380D6&compId=KSA1281.PDF?ci_sign=c6f8eeeaaac2d340ad4b1358569c27a6f3f5d7eb Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Polarisation: bipolar
Case: TO92 Formed
Mounting: THT
Type of transistor: PNP
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 120...240
Frequency: 100MHz
Kind of package: Ammo Pack
auf Bestellung 1797 Stücke:
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147+0.49 EUR
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FOD817B3S ONSEMI fod814-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Kind of output: transistor
Number of channels: 1
Number of pins: 4
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 5kV
Case: SMD4
Type of optocoupler: optocoupler
auf Bestellung 6000 Stücke:
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NTTFS030N06CTAG ONSEMI nttfs030n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1N5388BRLG 1N5388BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 3650 Stücke:
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162+0.44 EUR
180+0.4 EUR
199+0.36 EUR
293+0.24 EUR
500+0.22 EUR
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MBRM120LT1G MBRM120LT1G ONSEMI mbrm120l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Case: DO216AA
auf Bestellung 2387 Stücke:
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SZBZX84C4V7LT1G SZBZX84C4V7LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 3505 Stücke:
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455+0.16 EUR
544+0.13 EUR
642+0.11 EUR
1092+0.065 EUR
1401+0.051 EUR
2305+0.031 EUR
2660+0.027 EUR
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SZBZX84C4V7ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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MOC3031M MOC3031M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F6C0C7&compId=MOC3031M.pdf?ci_sign=c4dfb174bd32cf24f73a19250a5bf067f419300b Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Manufacturer series: MOC303XM
auf Bestellung 1753 Stücke:
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60+1.2 EUR
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NCP51820AMNTWG ONSEMI ncp51820-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
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HUF75339P3 HUF75339P3 ONSEMI HUF75339P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
auf Bestellung 76 Stücke:
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51+1.42 EUR
54+1.34 EUR
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MC33164P-5G MC33164P-5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab description Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Number of channels: 1
auf Bestellung 1201 Stücke:
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BD13810STU BD13810STU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 12.5W
Collector-emitter voltage: 60V
Current gain: 63...160
Polarisation: bipolar
auf Bestellung 1241 Stücke:
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188+0.38 EUR
480+0.34 EUR
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FDC6561AN FDC6561AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 857 Stücke:
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72+1 EUR
100+0.72 EUR
145+0.49 EUR
169+0.42 EUR
250+0.35 EUR
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FDC6333C FDC6333C ONSEMI FDC6333C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
auf Bestellung 1950 Stücke:
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82+0.87 EUR
90+0.8 EUR
115+0.63 EUR
138+0.52 EUR
500+0.32 EUR
750+0.29 EUR
1000+0.27 EUR
1500+0.26 EUR
Mindestbestellmenge: 82
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NXH450N65L4Q2F2S1G ONSEMI nxh450n65l4q2f2s1g-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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MC78M15CDTG MC78M15CDTG ONSEMI mc78m_ser.pdf description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
auf Bestellung 722 Stücke:
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228+0.31 EUR
265+0.27 EUR
298+0.24 EUR
343+0.21 EUR
368+0.19 EUR
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MC78M15CTG MC78M15CTG ONSEMI mc78m_ser.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
auf Bestellung 1040 Stücke:
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109+0.66 EUR
152+0.47 EUR
167+0.43 EUR
178+0.4 EUR
190+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
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US1DFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
Case: SOD123F
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NRVUS1DFA NRVUS1DFA ONSEMI US1MFA-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SOD123F
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NUF2101MT1G NUF2101MT1G ONSEMI nuf2101m-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Mounting: SMD
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
164+0.44 EUR
180+0.4 EUR
194+0.37 EUR
209+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 136
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FDD770N15A FDD770N15A ONSEMI fdd770n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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KA1H0165RTU ONSEMI ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
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LM358M LM358M ONSEMI LM358A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CAV25256VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83AE0D5&compId=CAV25256-D.pdf?ci_sign=669efa382c328832eaf282abdce8d583a1c197b5
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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CAV25256YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83C20D5&compId=CAV25256-D.pdf?ci_sign=a3e202f555004890cf315d766a60c9123505a10f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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BAS116LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EE00FE6997A7820&compId=BAS116L.pdf?ci_sign=d39c8aa6435ca31122d7e2f6411f3825f5b37403
BAS116LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 197 Stücke:
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Anzahl Preis
197+0.36 EUR
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BAS116TT1G bas116tt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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SBAS116LT1G bas116lt1-d.pdf
SBAS116LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVBAS116LT3G bas116lt1-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Produkt ist nicht verfügbar
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1N5956BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5956BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
auf Bestellung 5232 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
FSB50550AS fsb50550as-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Operating temperature: -40...125°C
Mounting: SMD
Output current: 2A
Case: Gull wing; PowerSMD
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Integrated circuit features: MOSFET
auf Bestellung 15750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
450+7.68 EUR
Mindestbestellmenge: 450
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SMF05CT2G smf05c-d.pdf
Hersteller: ONSEMI
Category: Diodes - Unclassified
Description: SMF05CT2G
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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NTPF125N65S3H ntpf125n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NC7S32M5X NC7S32.pdf
NC7S32M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
736+0.097 EUR
820+0.087 EUR
985+0.073 EUR
1276+0.056 EUR
1450+0.049 EUR
1568+0.046 EUR
1662+0.043 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
NL17SG32DFT2G NL17SG32-D.pdf
NL17SG32DFT2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
auf Bestellung 2988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
358+0.2 EUR
444+0.16 EUR
517+0.14 EUR
607+0.12 EUR
745+0.096 EUR
1000+0.072 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS5C670NLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C1B399E12400CE&compId=NTMFS5C670NL.PDF?ci_sign=58794c142c93026eb89de92680ee144a83517f87
NTMFS5C670NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 50A
Drain-source voltage: 60V
Gate charge: 20nC
Type of transistor: N-MOSFET
On-state resistance: 8.8mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 440A
Kind of channel: enhancement
Polarisation: unipolar
auf Bestellung 1654 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
39+1.86 EUR
43+1.69 EUR
100+1.46 EUR
500+1.33 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NTP165N65S3H ntp165n65s3h-d.pdf
NTP165N65S3H
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.59 EUR
22+3.37 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
FDMS007N08LC fdms007n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUP4301MR6T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BEBCE9911360CE&compId=NUP4301MR6T1G.PDF?ci_sign=c0c9d50ea049799b1959f4d08e53119a3cc282d2
NUP4301MR6T1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
261+0.27 EUR
304+0.24 EUR
397+0.18 EUR
603+0.12 EUR
658+0.11 EUR
Mindestbestellmenge: 228
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FDP22N50N FDP22N50N.pdf
FDP22N50N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.5 EUR
19+3.93 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SQD-F155 fgh75t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHD-F155 fgh75t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHDT-F155 fgh75t65shdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP1076P065G ncp1070-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP3065DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5CE0AE776030A17&compId=NCP3065.PDF?ci_sign=286f04e7853b7d9f6988b93b64fa3963eebf3944
NCP3065DR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 110...190kHz
Number of channels: 1
Operating voltage: 3...40V DC
auf Bestellung 1992 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
61+1.19 EUR
66+1.09 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
MC14543BDG mc14543b-d.pdf
MC14543BDG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4
Mounting: SMD
Kind of integrated circuit: BCD to 7-segment; decoder; display driver
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 1
Number of inputs: 4
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
194+0.37 EUR
213+0.34 EUR
226+0.32 EUR
240+0.3 EUR
247+0.29 EUR
288+0.28 EUR
480+0.27 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
NTR5198NLT1G ntr5198nl-d.pdf
NTR5198NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 2809 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
319+0.22 EUR
391+0.18 EUR
516+0.14 EUR
596+0.12 EUR
650+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
NVR5198NLT1G NVR5198NL.PDF
NVR5198NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
auf Bestellung 1493 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
224+0.32 EUR
302+0.24 EUR
397+0.18 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
NTR0202PLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABD57F79D57B80D3&compId=NTR0202PL.PDF?ci_sign=c89bac867850fdce5262bd307008ebf3c1178ec0
NTR0202PLT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
715+0.1 EUR
887+0.081 EUR
981+0.073 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
FOD8802A pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F6CE77AC0C7&compId=FOD8802A.pdf?ci_sign=dc6aa0d1e480bf10e0be0bd4e383c0ad4776d3bd
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Collector-emitter voltage: 75V
Insulation voltage: 2.5kV
Slew rate: 10kV/μs
Manufacturer series: FOD8802
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 6µs
Turn-off time: 40µs
Number of channels: 2
CTR@If: 35-230%@1mA
Produkt ist nicht verfügbar
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FDMS7698 FAIR-S-A0002363800-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 29W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMTSC4D3N15MC ntmtsc4d3n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
Produkt ist nicht verfügbar
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MC14001UBDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14001UBDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
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NTBLS4D0N15MC ntbls4d0n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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NSVRB521S30T1G rb521s30t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
Produkt ist nicht verfügbar
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2SC3647S-TD-E 2sa1417-d.pdf
2SC3647S-TD-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
116+0.62 EUR
179+0.4 EUR
250+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 72
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FSA2269L10X FAIR-S-A0000011123-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Produkt ist nicht verfügbar
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MC74LVXT4051DR2G mc74lvxt4051-d.pdf
MC74LVXT4051DR2G
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MC74LVXT4051DTR2G MC74LVXT4051-D.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
Produkt ist nicht verfügbar
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KSA1281YTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE2D621F02380D6&compId=KSA1281.PDF?ci_sign=c6f8eeeaaac2d340ad4b1358569c27a6f3f5d7eb
KSA1281YTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Polarisation: bipolar
Case: TO92 Formed
Mounting: THT
Type of transistor: PNP
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 120...240
Frequency: 100MHz
Kind of package: Ammo Pack
auf Bestellung 1797 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
147+0.49 EUR
211+0.34 EUR
247+0.29 EUR
300+0.24 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 107
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FOD817B3S fod814-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Kind of output: transistor
Number of channels: 1
Number of pins: 4
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 5kV
Case: SMD4
Type of optocoupler: optocoupler
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.13 EUR
Mindestbestellmenge: 2000
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NTTFS030N06CTAG nttfs030n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5388BRLG 1N53xx.PDF
1N5388BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 3650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
180+0.4 EUR
199+0.36 EUR
293+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 162
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MBRM120LT1G mbrm120l-d.pdf
MBRM120LT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Case: DO216AA
auf Bestellung 2387 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
291+0.25 EUR
343+0.21 EUR
Mindestbestellmenge: 218
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SZBZX84C4V7LT1G BZX84B_BZX84C.PDF
SZBZX84C4V7LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 3505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
544+0.13 EUR
642+0.11 EUR
1092+0.065 EUR
1401+0.051 EUR
2305+0.031 EUR
2660+0.027 EUR
Mindestbestellmenge: 455
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SZBZX84C4V7ET1G BZX84CxxET1G.PDF
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MOC3031M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F6C0C7&compId=MOC3031M.pdf?ci_sign=c4dfb174bd32cf24f73a19250a5bf067f419300b
MOC3031M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Manufacturer series: MOC303XM
auf Bestellung 1753 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
100+0.72 EUR
116+0.62 EUR
122+0.59 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
NCP51820AMNTWG ncp51820-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
Produkt ist nicht verfügbar
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HUF75339P3 HUF75339P3.pdf
HUF75339P3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
47+1.53 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 43
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MC33164P-5G description pVersion=0046&contRep=ZT&docId=005056AB82531ED998CDAF8C5FEC1820&compId=MC34164_MC43164_NCV33164.pdf?ci_sign=825f193a3a1fb7df49601f56b76ef00fd67272ab
MC33164P-5G
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Number of channels: 1
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
148+0.49 EUR
151+0.47 EUR
Mindestbestellmenge: 109
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BD13810STU pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0
BD13810STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 12.5W
Collector-emitter voltage: 60V
Current gain: 63...160
Polarisation: bipolar
auf Bestellung 1241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
151+0.48 EUR
167+0.43 EUR
188+0.38 EUR
480+0.34 EUR
Mindestbestellmenge: 151
Im Einkaufswagen  Stück im Wert von  UAH
FDC6561AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493
FDC6561AN
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
100+0.72 EUR
145+0.49 EUR
169+0.42 EUR
250+0.35 EUR
500+0.31 EUR
Mindestbestellmenge: 72
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FDC6333C FDC6333C.pdf
FDC6333C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
90+0.8 EUR
115+0.63 EUR
138+0.52 EUR
500+0.32 EUR
750+0.29 EUR
1000+0.27 EUR
1500+0.26 EUR
Mindestbestellmenge: 82
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NXH450N65L4Q2F2S1G nxh450n65l4q2f2s1g-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MC78M15CDTG description mc78m_ser.pdf
MC78M15CDTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
265+0.27 EUR
298+0.24 EUR
343+0.21 EUR
368+0.19 EUR
Mindestbestellmenge: 228
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MC78M15CTG mc78m_ser.pdf
MC78M15CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
152+0.47 EUR
167+0.43 EUR
178+0.4 EUR
190+0.38 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 109
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US1DFA us1mfa-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
Case: SOD123F
Produkt ist nicht verfügbar
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NRVUS1DFA US1MFA-D.PDF
NRVUS1DFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SOD123F
Produkt ist nicht verfügbar
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NUF2101MT1G nuf2101m-d.pdf
NUF2101MT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Mounting: SMD
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
164+0.44 EUR
180+0.4 EUR
194+0.37 EUR
209+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 136
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FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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KA1H0165RTU ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Produkt ist nicht verfügbar
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LM358M LM358A.pdf
LM358M
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8; Ch: dual
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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