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FDMS0310AS ONSEMI fdms0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FSB50550US ONSEMI FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
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NTMJS1D4N06CLTWG ONSEMI ntmjs1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTP067N65S3H ONSEMI ntp067n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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FQD2N60CTM-WS FQD2N60CTM-WS ONSEMI fqu2n60c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBRS240LT3G MBRS240LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699E03639408469&compId=MBRS240LT3G.PDF?ci_sign=a0b1f011afec24b5c106edf777d02487d9e956fe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
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NSVJ5908DSG5T1G ONSEMI nsvj5908dsg5-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
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2N6488G 2N6488G ONSEMI 2n6487-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
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NTMYS014N06CLTWG ONSEMI ntmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MOC3081M MOC3081M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281 Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
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1SMB5955BT3G 1SMB5955BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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NTBG025N065SC1 ONSEMI ntbg025n065sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NTMYS025N06CLTWG ONSEMI ntmys025n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI fdb12n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
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NTP110N65S3HF ONSEMI ntp110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTMT110N65S3HF ONSEMI ntmt110n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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NTPF110N65S3HF ONSEMI ntpf110n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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MM3Z3V3T1G MM3Z3V3T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
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NTBLS1D1N08H ONSEMI ntbls1d1n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Power dissipation: 311W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Kind of channel: enhancement
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NTBLS1D5N08MC ONSEMI ntbls1d5n08mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Kind of channel: enhancement
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NTBLS1D5N10MCTXG ONSEMI NTBLS1D5N10MC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 161W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Kind of channel: enhancement
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NTBLS1D7N08H ONSEMI ntbls1d7n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Power dissipation: 83W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Kind of channel: enhancement
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NTBLS1D7N10MCTXG ONSEMI NTBLS1D7N10MC-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Power dissipation: 147W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Kind of channel: enhancement
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SS32 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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NTD20N06T4G ONSEMI ntd20n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDA16N50-F109 FDA16N50-F109 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
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FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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FDG1024NZ FDG1024NZ ONSEMI FDG1024NZ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
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FST3125DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
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FST3125MTCX FST3125MTCX ONSEMI FAIRS26272-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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NTBG020N120SC1 ONSEMI ntbg020n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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MOC8050M MOC8050M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
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FCB260N65S3 FCB260N65S3 ONSEMI fcb260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
auf Bestellung 784 Stücke:
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25+2.89 EUR
28+2.57 EUR
100+2.4 EUR
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FCD260N65S3 ONSEMI fcd260n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
Produkt ist nicht verfügbar
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NTPF360N65S3H ONSEMI ntpf360n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
Produkt ist nicht verfügbar
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NTND31225CZTAG ONSEMI ntnd31225cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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MC33262DR2G ONSEMI mc34262-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
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MC33262PG MC33262PG ONSEMI mc34262-d.pdf description Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
auf Bestellung 143 Stücke:
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57+1.26 EUR
64+1.13 EUR
66+1.09 EUR
74+0.97 EUR
100+0.94 EUR
Mindestbestellmenge: 57
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FAN4800AUN ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FAN4800AUM ONSEMI fan4800cu-d.pdf Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FUSB2805MLX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A093ACDFD2259&compId=FUSB2805.pdf?ci_sign=02d0f2713126d4acd3c9bf4ffe66460232cabeb9 Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI,USB 2.0; transceiver; 2.7÷4.5VDC; MLP32
Type of integrated circuit: interface
Interface: ULPI; USB 2.0
Kind of integrated circuit: transceiver
Data transfer rate: 0.48Gbps
Supply voltage: 2.7...4.5V DC
Case: MLP32
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NCP115ASN330T2G NCP115ASN330T2G ONSEMI ncp115-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
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2N7000 2N7000 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 3272 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
163+0.44 EUR
188+0.38 EUR
239+0.3 EUR
343+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 136
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FDB0250N807L ONSEMI fdb0250n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP1380BDR2G NCP1380BDR2G ONSEMI ncp1380-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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LMV339DTBR2G LMV339DTBR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E7CA11BCF100CE&compId=LMV331_393_339.PDF?ci_sign=ec8a8141c56814ab95dc20979e4034ca2a0c855c Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: TSSOP14
Produkt ist nicht verfügbar
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FDMS7680 ONSEMI fdms7680-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FQL40N50F FQL40N50F ONSEMI fql40n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FSBB20CH60C
+1
 		FSBB20CH60C ONSEMI fsbb20ch60c-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
Produkt ist nicht verfügbar
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MC74LVXT4051DTRG ONSEMI MC74LVXT4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
Produkt ist nicht verfügbar
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FGB3040G2-F085 FGB3040G2-F085 ONSEMI fgi3040g2_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
auf Bestellung 737 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
25+2.92 EUR
100+2.72 EUR
250+2.7 EUR
Mindestbestellmenge: 23
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MC74HC1G00DTT1G MC74HC1G00DTT1G ONSEMI MC74HC1G00-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
317+0.23 EUR
472+0.15 EUR
544+0.13 EUR
Mindestbestellmenge: 193
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MC74HC1G08DFT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
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MC74HC1G08DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
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NV25256DTHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV25256DWHFT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV25256MUW3VTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMS0310AS fdms0310as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FSB50550US FAIRS46910-1.pdf?t.download=true&u=5oefqw fsb50550us-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Number of channels: 6
Output current: 2A
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 14.5W
Case: SPM5H-023
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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NTMJS1D4N06CLTWG ntmjs1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTP067N65S3H ntp067n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FQD2N60CTM-WS fqu2n60c-d.pdf
FQD2N60CTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRS240LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58699E03639408469&compId=MBRS240LT3G.PDF?ci_sign=a0b1f011afec24b5c106edf777d02487d9e956fe
MBRS240LT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. load current: 4A
Max. off-state voltage: 40V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. forward voltage: 0.55V
auf Bestellung 2080 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
219+0.33 EUR
258+0.28 EUR
295+0.24 EUR
334+0.21 EUR
388+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
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NSVJ5908DSG5T1G nsvj5908dsg5-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.3W
Case: MCPH5
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Application: automotive industry
Gate current: 10mA
Produkt ist nicht verfügbar
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2N6488G 2n6487-d.pdf
2N6488G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 15A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 15A
Power dissipation: 75W
Case: TO220AB
Current gain: 20...150
Mounting: THT
Kind of package: tube
Frequency: 5MHz
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
91+0.79 EUR
108+0.67 EUR
116+0.62 EUR
Mindestbestellmenge: 70
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NTMYS014N06CLTWG ntmys014n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MOC3081M pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BA93849DF2D0FA8&compId=MOC3083M.pdf?ci_sign=9a3ffa2a6a60a05a9564f35d35517a533d1f8281
MOC3081M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3081M
Produkt ist nicht verfügbar
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1SMB5955BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5955BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 180V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 180V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
261+0.27 EUR
290+0.25 EUR
382+0.19 EUR
432+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 209
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NTBG025N065SC1 ntbg025n065sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NTMYS025N06CLTWG ntmys025n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 30nC
On-state resistance: 0.7Ω
Kind of channel: enhancement
Technology: UniFET™
Drain current: 6.9A
Pulsed drain current: 46A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Produkt ist nicht verfügbar
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NTP110N65S3HF ntp110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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NTMT110N65S3HF ntmt110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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NTPF110N65S3HF ntpf110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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MM3Z3V3T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z3V3T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 34440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
736+0.097 EUR
962+0.074 EUR
1985+0.036 EUR
2605+0.027 EUR
3379+0.021 EUR
3624+0.02 EUR
Mindestbestellmenge: 556
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NTBLS1D1N08H ntbls1d1n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 311W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Power dissipation: 311W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTBLS1D5N08MC ntbls1d5n08mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 298A; Idm: 4487A; 2.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 1.53mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 298A
Pulsed drain current: 4487A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTBLS1D5N10MCTXG NTBLS1D5N10MC-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Power dissipation: 161W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 312A
Pulsed drain current: 2055A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTBLS1D7N08H ntbls1d7n08h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 1173A; 83W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Power dissipation: 83W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 1173A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTBLS1D7N10MCTXG NTBLS1D7N10MC-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Power dissipation: 147W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 272A
Pulsed drain current: 2137A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SS32 SS32_SS39.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 20V; 3A; reel,tape; 2.27W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.5V
Power dissipation: 2.27W
Load current: 3A
Max. off-state voltage: 20V
Max. forward impulse current: 100A
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NTD20N06T4G ntd20n06-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
38+1.9 EUR
41+1.77 EUR
50+1.47 EUR
100+1.34 EUR
200+1.23 EUR
500+1.1 EUR
1000+1 EUR
Mindestbestellmenge: 33
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FDA16N50-F109 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9AD923142AC3A0C7&compId=FDA16N50_F109.PDF?ci_sign=c603ddf6113d634b6762760ffa586cc84b7053d3
FDA16N50-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Produkt ist nicht verfügbar
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FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
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FDG1024NZ FDG1024NZ.pdf
FDG1024NZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Drain current: 1.2A
Gate-source voltage: ±8V
Kind of package: reel; tape
Drain-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Case: SC70-6; SC88; SOT363
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.6nC
Power dissipation: 0.36W
On-state resistance: 389mΩ
Produkt ist nicht verfügbar
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FST3125DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278DD72EE0D3&compId=74FST3125.pdf?ci_sign=40b3fc8bc7d6f9f64987e32314b427484f5ec79f
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FST3125MTCX FAIRS26272-1.pdf?t.download=true&u=5oefqw
FST3125MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; Ch: 4; IN: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of channels: 4
Number of inputs: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 3µA
Produkt ist nicht verfügbar
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NTBG020N120SC1 ntbg020n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8.6A; Idm: 392A; 3.7W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8.6A
Pulsed drain current: 392A
Power dissipation: 3.7W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MOC8050M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786EE21F0609FE745&compId=MOC8050M.pdf?ci_sign=641609158cfd4e09bef9cc3f8e8b625019582a72
MOC8050M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Collector-emitter voltage: 80V
CTR@If: 500%@10mA
Insulation voltage: 4.17kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8.5µs
Turn-off time: 95µs
Number of channels: 1
Produkt ist nicht verfügbar
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NTLJS2103PTBG ntljs2103p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
Produkt ist nicht verfügbar
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FCB260N65S3 fcb260n65s3-d.pdf
FCB260N65S3
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
25+2.89 EUR
28+2.57 EUR
100+2.4 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
FCD260N65S3 fcd260n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
Produkt ist nicht verfügbar
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NTPF360N65S3H ntpf360n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220FP
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Power dissipation: 26W
Gate charge: 17.5nC
Produkt ist nicht verfügbar
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NTND31225CZTAG ntnd31225cz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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MC33262DR2G mc34262-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO8; reel,tape; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
Produkt ist nicht verfügbar
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MC33262PG description mc34262-d.pdf
MC33262PG
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; DIP8; tube; SMPS; 12÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: DIP8
Mounting: THT
Kind of package: tube
Application: SMPS
Output current: 0.5A
Operating voltage: 12...28V DC
Output voltage: 6.4V
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
64+1.13 EUR
66+1.09 EUR
74+0.97 EUR
100+0.94 EUR
Mindestbestellmenge: 57
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FAN4800AUN fan4800cu-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; DIP16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: DIP16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FAN4800AUM fan4800cu-d.pdf
Hersteller: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller,PWM controller; SO16; -40÷105°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller; PWM controller
Case: SO16
Mounting: SMD
Operating temperature: -40...105°C
Topology: boost
Produkt ist nicht verfügbar
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FUSB2805MLX pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A093ACDFD2259&compId=FUSB2805.pdf?ci_sign=02d0f2713126d4acd3c9bf4ffe66460232cabeb9
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; ULPI,USB 2.0; transceiver; 2.7÷4.5VDC; MLP32
Type of integrated circuit: interface
Interface: ULPI; USB 2.0
Kind of integrated circuit: transceiver
Data transfer rate: 0.48Gbps
Supply voltage: 2.7...4.5V DC
Case: MLP32
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NCP115ASN330T2G ncp115-d.pdf
NCP115ASN330T2G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; TSOP5; SMD
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...85°C
Output current: 0.3A
Number of channels: 1
Input voltage: 1.7...5.5V
Output voltage: 3.3V
Tolerance: ±2%
Manufacturer series: NCP115
Type of integrated circuit: voltage regulator
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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2N7000 2N7000_2N7002_NDS7002A.PDF
2N7000
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
auf Bestellung 3272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
163+0.44 EUR
188+0.38 EUR
239+0.3 EUR
343+0.21 EUR
500+0.16 EUR
Mindestbestellmenge: 136
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FDB0250N807L fdb0250n807l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP1380BDR2G ncp1380-d.pdf
NCP1380BDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -800...500mA
Mounting: SMD
Case: SO8
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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LMV339DTBR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95E7CA11BCF100CE&compId=LMV331_393_339.PDF?ci_sign=ec8a8141c56814ab95dc20979e4034ca2a0c855c
LMV339DTBR2G
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 2.7÷5V; SMT; TSSOP14; reel,tape
Kind of comparator: universal
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: TSSOP14
Produkt ist nicht verfügbar
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FDMS7680 fdms7680-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 80A; 33W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 80A
Power dissipation: 33W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
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FQL40N50F fql40n50f-d.pdf
FQL40N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FSBB20CH60C fsbb20ch60c-d.pdf
FSBB20CH60C
+1
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Technology: Motion SPM® 3
Mounting: THT
Operating temperature: -40...125°C
Power dissipation: 62W
Output current: 20A
Number of channels: 6
Collector-emitter voltage: 600V
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMMC-027
Produkt ist nicht verfügbar
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MC74LVXT4051DTRG MC74LVXT4051-D.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
Produkt ist nicht verfügbar
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FGB3040G2-F085 fgi3040g2_f085-d.pdf
FGB3040G2-F085
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25.6A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
auf Bestellung 737 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.92 EUR
100+2.72 EUR
250+2.7 EUR
Mindestbestellmenge: 23
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MC74HC1G00DTT1G MC74HC1G00-D.pdf
MC74HC1G00DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
317+0.23 EUR
472+0.15 EUR
544+0.13 EUR
Mindestbestellmenge: 193
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MC74HC1G08DFT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
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MC74HC1G08DFT2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5848F9CD820&compId=MC74HC1G08-D.pdf?ci_sign=f5658d4e1888a6f9db276d32399aa0774427409f
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
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NV25256DTHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6940D5&compId=NV25128-D.pdf?ci_sign=7b16908e3620eaf2182175a97869d9d31dc1e2dd
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV25256DWHFT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6A80D5&compId=NV25128-D.pdf?ci_sign=03fa58831d3532641ed44e0a84b4ed4c5ab51406
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV25256MUW3VTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E5D4D6BC0D5&compId=NV25256WF-D.pdf?ci_sign=f0b606c98d12cd7f7b6ddde3be4f222256c61b6a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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