Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NCP133AMXADJTCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: NCP133 Case: XDFN6 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 0.5A Voltage drop: 0.25V Output voltage: 0.8...3.6V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
74VHCT04AMTCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Quiescent current: 20µA Number of inputs: 1 Kind of gate: NOT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
BDK-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; Comp: AX8052F100,RSL10 Type of development kit: evaluation Kit contents: cable USB A plug - USB micro plug; prototype board Components: AX8052F100; RSL10 Programmers and development kits features: Arduino Shield compatible; Bluetooth board Interface: GPIO; I2C; SPI; UART Kind of connector: CR2032; pin strips; Pmod socket; USB micro |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
1SMA5940BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 43V; SMD; reel,tape; SMA; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Case: SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
SZ1SMA5940BT3G | ONSEMI |
![]() Description: Diode: Zener; 1.5W; 43V; SMD; reel,tape; SMA; single diode Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Type of diode: Zener Semiconductor structure: single diode Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Application: automotive industry Case: SMA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
NJW21193G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P Polarisation: bipolar Case: TO3P Mounting: THT Kind of package: tube Type of transistor: PNP Power dissipation: 200W Collector current: 16A Current gain: 20...70 Collector-emitter voltage: 250V Frequency: 4MHz Application: automotive industry |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
D44H8G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
NVBLS1D1N08H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 156W Case: TOLL Mounting: SMD Kind of package: reel; tape Gate charge: 166nC On-state resistance: 1.05mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 351A Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVBLS1D5N10MCTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 165W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 131nC On-state resistance: 1.5mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 300A Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVBLS1D7N08H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 118.7W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 121nC On-state resistance: 1.7mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 241.3A Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NVBLS1D7N10MCTXG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 152W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 115nC On-state resistance: 1.8mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 265A Pulsed drain current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
![]() |
1N5230BTR | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA Kind of package: reel; tape Case: CASE017AG Mounting: THT Semiconductor structure: single diode Type of diode: Zener Leakage current: 5µA Power dissipation: 0.5W Zener voltage: 4.7V Tolerance: ±5% Manufacturer series: 1N52xxB |
auf Bestellung 4940 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
![]() |
2N3906TAR | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
![]() |
2N3906TF | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
![]() |
2N3906TFR | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
NSV9435T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.72W Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Collector-emitter voltage: 300mV Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC34071DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO8 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC34074ADR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC34074DR2G | ONSEMI |
![]() ![]() Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MC34074VDR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Case: SO14 Slew rate: 13V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Voltage supply range: 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA Number of channels: quad |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MJD31CRLG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NJVMJD31CRLG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NJVMJD31CG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LMV358MUTAG | ONSEMI |
![]() Description: IC: operational amplifier; 1MHz; uDFN8; 2.7÷5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: dual Case: uDFN8 Slew rate: 1V/μs Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NSVBCP69T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NSVBC848BWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
DTC123JM3T5G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
DTC124EM3T5G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 60...100 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM2576D2T-ADJG | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM7301SN1T1G | ONSEMI |
![]() Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape Mounting: SMT Case: SOT23-5 Operating temperature: -40...85°C Input offset current: 55nA Input offset voltage: 6mV Voltage supply range: 1.8...32V DC Bandwidth: 4MHz Type of integrated circuit: operational amplifier Kind of package: reel; tape Number of channels: single |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCP59151DS28R4G | ONSEMI |
![]() ![]() ![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.5A; D2PAK-5; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP59150 Operating temperature: -40...125°C Voltage drop: 0.5V Number of channels: 1 Output current: 1.5A Input voltage: 2.24...13.5V Tolerance: ±2.5% Output voltage: 2.8V Type of integrated circuit: voltage regulator Case: D2PAK-5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
BSH2N7002KT1G | ONSEMI |
Category: Unclassified Description: BSH2N7002KT1G |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
![]() |
TIP117G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Kind of transistor: Darlington Type of transistor: PNP Collector current: 2A Power dissipation: 2W Collector-emitter voltage: 100V Polarisation: bipolar |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
NSVBCH817-40LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2SA2039-TL-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Mounting: SMD Collector current: 5A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2SA2125-TD-E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2SA2125-TD-H | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2SA2210-1E | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP Mounting: THT Collector current: 20A Power dissipation: 30W Collector-emitter voltage: 50V Current gain: 150...450 Frequency: 140MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2SA2210-EPN-1E | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP Mounting: THT Collector current: 20A Power dissipation: 2W Collector-emitter voltage: 50V Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NSV2SA2029M3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
SMBT3904DW1T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FGHL75T65MQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FGHL75T65LQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
FGHL75T65MQD | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
AFGHL75T65SQDT | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 136nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
AFGHL75T65SQ | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
AFGHL75T65SQDC | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
2N5190G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225 Kind of package: bulk Type of transistor: NPN Mounting: THT Case: TO225 Collector current: 4A Power dissipation: 40W Current gain: 25...100 Collector-emitter voltage: 40V Frequency: 2MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM1117MPX-ADJNOPB | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
LM1117IMPX-ADJNOPB | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NCV8154MW120280TBG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 2 Case: DFN10 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
NE521DR2G | ONSEMI |
![]() Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT Kind of comparator: fast Kind of package: reel; tape Mounting: SMT Case: SO14 Operating temperature: 0...70°C Delay time: 8.2ns Input offset current: 1µA Input bias current: 7.5µA Input offset voltage: 7.5mV Number of comparators: 2 Operating voltage: 4.75...5.25/-4.75...-5.25V Type of integrated circuit: comparator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
S2SC4617G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.125W Case: SC75; SOT416 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MELMUR1620CTG | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
![]() |
MUN2211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 5750 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
MARSMMUN2211LT1G | ONSEMI |
Category: Unclassified Description: MARSMMUN2211LT1G |
auf Bestellung 174000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||||
SE5532AD8R2G | ONSEMI |
![]() Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape Type of integrated circuit: operational amplifier Case: SO8 Number of channels: dual Mounting: SMT Kind of package: reel; tape Operating temperature: -55...125°C Input offset current: 150nA Input bias current: 0.8µA Input offset voltage: 4mV Voltage supply range: ± 3...20V DC Slew rate: 9V/μs Bandwidth: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MMBT4403M3T5G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MMBT4403WT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
MMBT5401LT3G | ONSEMI |
![]() Description: Transistor: PNP Type of transistor: PNP |
auf Bestellung 160000 Stücke: Lieferzeit 14-21 Tag (e) |
|
NCP133AMXADJTCG |
![]() |
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP133
Case: XDFN6
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.25V
Output voltage: 0.8...3.6V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.6V; 500mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP133
Case: XDFN6
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.25V
Output voltage: 0.8...3.6V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74VHCT04AMTCX |
![]() |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Quiescent current: 20µA
Number of inputs: 1
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Quiescent current: 20µA
Number of inputs: 1
Kind of gate: NOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BDK-GEVK |
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Comp: AX8052F100,RSL10
Type of development kit: evaluation
Kit contents: cable USB A plug - USB micro plug; prototype board
Components: AX8052F100; RSL10
Programmers and development kits features: Arduino Shield compatible; Bluetooth board
Interface: GPIO; I2C; SPI; UART
Kind of connector: CR2032; pin strips; Pmod socket; USB micro
Category: Development kits - others
Description: Dev.kit: evaluation; Comp: AX8052F100,RSL10
Type of development kit: evaluation
Kit contents: cable USB A plug - USB micro plug; prototype board
Components: AX8052F100; RSL10
Programmers and development kits features: Arduino Shield compatible; Bluetooth board
Interface: GPIO; I2C; SPI; UART
Kind of connector: CR2032; pin strips; Pmod socket; USB micro
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1SMA5940BT3G |
![]() |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; reel,tape; SMA; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Case: SMA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; reel,tape; SMA; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Case: SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZ1SMA5940BT3G |
![]() |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; reel,tape; SMA; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Case: SMA
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; reel,tape; SMA; single diode
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Type of diode: Zener
Semiconductor structure: single diode
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Case: SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJW21193G |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Polarisation: bipolar
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Current gain: 20...70
Collector-emitter voltage: 250V
Frequency: 4MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Polarisation: bipolar
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: PNP
Power dissipation: 200W
Collector current: 16A
Current gain: 20...70
Collector-emitter voltage: 250V
Frequency: 4MHz
Application: automotive industry
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.73 EUR |
14+ | 5.43 EUR |
20+ | 3.73 EUR |
21+ | 3.53 EUR |
D44H8G |
![]() |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
69+ | 1.04 EUR |
98+ | 0.74 EUR |
103+ | 0.7 EUR |
NVBLS1D1N08H |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 156W
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 351A; Idm: 900A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 156W
Case: TOLL
Mounting: SMD
Kind of package: reel; tape
Gate charge: 166nC
On-state resistance: 1.05mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 351A
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVBLS1D5N10MCTXG |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 165W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 131nC
On-state resistance: 1.5mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVBLS1D7N08H |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 118.7W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 241.3A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 241.3A; Idm: 900A; 118.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 118.7W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 121nC
On-state resistance: 1.7mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 241.3A
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVBLS1D7N10MCTXG |
![]() |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 115nC
On-state resistance: 1.8mΩ
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5230BTR |
![]() |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode; 5uA
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Power dissipation: 0.5W
Zener voltage: 4.7V
Tolerance: ±5%
Manufacturer series: 1N52xxB
auf Bestellung 4940 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
552+ | 0.13 EUR |
910+ | 0.079 EUR |
1202+ | 0.059 EUR |
1819+ | 0.039 EUR |
2703+ | 0.026 EUR |
2959+ | 0.024 EUR |
3068+ | 0.023 EUR |
2N3906TAR |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N3906TF |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N3906TFR |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSV9435T1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC34071DR2G |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO8; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC34074ADR2G |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC34074DR2G | ![]() |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC34074VDR2G |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; SO14; 3÷44VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Number of channels: quad
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MJD31CRLG |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD31CRLG |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NJVMJD31CG |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LMV358MUTAG |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; uDFN8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual
Case: uDFN8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; uDFN8; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: dual
Case: uDFN8
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBCP69T1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVBC848BWT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTC123JM3T5G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTC124EM3T5G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Quantity in set/package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM2576D2T-ADJG | ![]() |
![]() |
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM7301SN1T1G |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset current: 55nA
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Bandwidth: 4MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; SOT23-5; 1.8÷32VDC; reel,tape
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset current: 55nA
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Bandwidth: 4MHz
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP59151DS28R4G |
![]() ![]() ![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.5A; D2PAK-5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP59150
Operating temperature: -40...125°C
Voltage drop: 0.5V
Number of channels: 1
Output current: 1.5A
Input voltage: 2.24...13.5V
Tolerance: ±2.5%
Output voltage: 2.8V
Type of integrated circuit: voltage regulator
Case: D2PAK-5
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 1.5A; D2PAK-5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP59150
Operating temperature: -40...125°C
Voltage drop: 0.5V
Number of channels: 1
Output current: 1.5A
Input voltage: 2.24...13.5V
Tolerance: ±2.5%
Output voltage: 2.8V
Type of integrated circuit: voltage regulator
Case: D2PAK-5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSH2N7002KT1G |
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.027 EUR |
TIP117G |
![]() |
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: PNP
Collector current: 2A
Power dissipation: 2W
Collector-emitter voltage: 100V
Polarisation: bipolar
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 2A; 2W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of transistor: Darlington
Type of transistor: PNP
Collector current: 2A
Power dissipation: 2W
Collector-emitter voltage: 100V
Polarisation: bipolar
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
64+ | 1.13 EUR |
78+ | 0.93 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
154+ | 0.46 EUR |
NSVBCH817-40LT1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2039-TL-E |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2125-TD-E |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2125-TD-H |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2210-1E |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 30W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 30W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 30W
Collector-emitter voltage: 50V
Current gain: 150...450
Frequency: 140MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA2210-EPN-1E |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 2W
Collector-emitter voltage: 50V
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 20A; 2W; TO220FP
Mounting: THT
Collector current: 20A
Power dissipation: 2W
Collector-emitter voltage: 50V
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSV2SA2029M3T5G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBT3904DW1T1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGHL75T65MQDT |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGHL75T65LQDT |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGHL75T65MQD |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AFGHL75T65SQDT |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AFGHL75T65SQ |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AFGHL75T65SQDC |
![]() |
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N5190G |
![]() |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225
Kind of package: bulk
Type of transistor: NPN
Mounting: THT
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 25...100
Collector-emitter voltage: 40V
Frequency: 2MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 4A; 40W; TO225
Kind of package: bulk
Type of transistor: NPN
Mounting: THT
Case: TO225
Collector current: 4A
Power dissipation: 40W
Current gain: 25...100
Collector-emitter voltage: 40V
Frequency: 2MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM1117MPX-ADJNOPB |
![]() |
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LM1117IMPX-ADJNOPB |
![]() |
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCV8154MW120280TBG |
![]() |
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 2
Case: DFN10
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 2
Case: DFN10
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NE521DR2G |
![]() |
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S2SC4617G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.1A; 0.125W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.125W
Case: SC75; SOT416
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MELMUR1620CTG |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 1.07 EUR |
500+ | 0.97 EUR |
MUN2211T1G |
![]() |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 5750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
532+ | 0.13 EUR |
596+ | 0.12 EUR |
826+ | 0.087 EUR |
920+ | 0.078 EUR |
993+ | 0.072 EUR |
1446+ | 0.049 EUR |
2137+ | 0.033 EUR |
2263+ | 0.032 EUR |
MARSMMUN2211LT1G |
auf Bestellung 174000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6000+ | 0.018 EUR |
SE5532AD8R2G |
![]() |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; SO8; ±3÷20VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: dual
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT4403M3T5G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT4403WT1G |
![]() |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBT5401LT3G |
![]() |
auf Bestellung 160000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.026 EUR |